Date:- 27 Apr, 2001
WESTCODE
Fast Turn-off Thyristor
Types P0848YS04x to P0848YS05x
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
diT/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Repetitive peak off-state voltage, (note 1) 400-500 V
Non-repetitive peak off-state voltage, (note 1) 400-500 V
Repetitive peak reverse voltage, (note 1) 400-500 V
Non-repetitive peak reverse voltage, (note 1) 500-600 V
OTHER RATINGS
Mean on-state current, T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, VRM=0.6V
2
t capacity for fusing tp=10ms, V
I
Maximum rate of rise of on-state current (repetitive), (Note 6) 500 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1000 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 2 W
Peak forward gate power 30 W
Non-trigger gate voltage, (Note 7) 0.25 V
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
=55°C, (note 2) 848 A
sink
=85°C, (note 2) 558 A
sink
=85°C, (note 3) 319 A
sink
=25°C, (note 2) 1713 A
sink
=25°C, (note 4) 1394 A
sink
, (note 5) 8750 A
RRM
≤
10V, (note 5)
RM
, (note 5) 383×10
RRM
≤
10V, (note 5)
RM
Data Sheet Issue:- 1
MAXIMUM
LIMITS
MAXIMUM
LIMITS
9625 A
3
3
463×10
UNITS
UNITS
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
7)
Rated V
Data Sheet. Types P0848YS04x to P0848YS05 Issue 1 Page 1 of 12 April, 2001
DRM
, IFG=2A, t
DRM
.
≤
0.5µs, T
r
case
=125°C.
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Characteristics
P0848YS04x to P0848YS05x
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
TM
V
0
r
S
dv/dt Critical rate of rise of off-state voltage 200 - - VD=80% V
I
DRM
I
RRM
V
GT
I
GT
I
H
Q
Q
I
rm
t
rr
t
q
R
th(j-hs)
Maximum peak on-state voltage - - 1.47 ITM=1490A V
Threshold voltage - - 1.01 V
Slope resistance - - 0.305
Peak off-state current - - 50 Rated V
Peak reverse current - - 50 Rated V
DRM
RRM
Gate trigger voltage - - 3.0 Tj=25°C V
Gate trigger current - - 200 Tj=25°C VD=10V, IT=3A mA
Holding current - - 1000 Tj=25°C mA
Recovered charge - 200 - µC
rr
Recovered charge, 50% Chord - 80 150 µC
ra
Reverse recovery current - 75 - A
I
=550A, tp=500µs, di/dt=40A/µs, Vr=50V
TM
Reverse recovery time - 2.5 -
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
V
=80%V
dr
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
V
=80%V
dr
Turn-off time (note 2)
Thermal resistance, junction to heatsink
--15
12 - 20
- - 0.05 Double side cooled K/W
- - 0.1 Single side cooled K/W
DRM
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
(Note 1)
UNITS
m
V/µs
mA
mA
µs
µs
F Mounting force 5 - 10 kN
W
Weight - 90 - g
t
Ω
Notes:-
Unless otherwise indicated Tj=125°C.
1)
The required tq (specified with dVdr/dt=200V/µs) is repres ented by an ‘x’ in the device part number. See ordering information
2)
for details of t
codes.
q
Introduction
The P0848 series of fast turn-off thyristors (manufacturing reference PJBXS) have fast switching
characteristics provided by a regenerative gate.
Data Sheet. Types P0848YS04x to P0848YS05 Issue 1 Page 2 of 12 April, 2001
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
P0848YS04x to P0848YS05x
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
04 400 500 260
05 500 600 340
2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current The maxim um un-primed rate of rise of on-s tate current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive per formanc e, the on-state r ate of r ise of c urrent m ust not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be inc luded as
parallel to the first.
9.0 Maximum Operating Frequency The maximum operating frequenc y is set by the on-state duty, the time required for the thyristor to turn off
) and for the off-state voltage to reach full value (tv), i.e.
(t
q
Data Sheet. Types P0848YS04x to P0848YS05 Issue 1 Page 3 of 12 April, 2001
WESTCODE
(
)
(
)
10.0 On-State Energy per Pulse Characteristics These curves enable rapid estim ation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Then the average dissipation will be:
Positive development in power electronics
be the Energy per pulse for a given current and pulse width, in joules
Let E
p
Let R
and T
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
P0848YS04x to P0848YS05x
11.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
is based on a 150µs integration time.
(ii) Q
rr
i.e.
=
.)(max
150
∫
0
µ
s
rrrr
125
Fig. 1
.
dtiQ
⋅−=⋅=
RWT and fEW
()
HsJthAVSINKPAV
−
1
t
(iii)
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature c an
then be evaluated from:
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
= d.c. thermal resistance (°C/W).
R
th(J-Hs)
Data Sheet. Types P0848YS04x to P0848YS05 Issue 1 Page 4 of 12 April, 2001
FactorK
)()(
=
2
t
⋅+⋅−=
RfkETT
()
−
HsJthoriginalSINKnewSINK
WESTCODE
The total dissipation is now given by:
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
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(original)(TOT)
P0848YS04x to P0848YS05x
⋅+=
fEWW
() ( )
Where T
T
SINK (original)
A suitable R-C snubber network is connected across the thyristor to restrict the transient revers e voltage
to a peak value (V
67% of Grade, the reverse loss m ay be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
12.3 Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered c harge and peak reverse recovery current. W hen measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the m easuring os cilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The form ula used for the c alculation
of this snubber is shown below:
2
R
4
SINK (new)
V
⋅=
⋅
C
S
is the required maximum heat sink temperature and
is the heat sink temperature given with the frequency ratings.
) of 67% of the maximum grade. If a diff erent grade is being used or Vrm is other than
rm
r
di
dt
()
⋅⋅−=
fRETT
thoriginalSINKnewSINK
Where: Vr= Commutating source voltage
C
= Snubber capacitance
S
R = Snubber resistance
13.0 Gate Drive
The recomm ended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Data Sheet. Types P0848YS04x to P0848YS05 Issue 1 Page 5 of 12 April, 2001
WESTCODE
p
p
14.0 Computer Modelling Parameters
14.1 Calculating VT using ABCD Coefficients
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P0848YS04x to P0848YS05x
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
The constants, derived by curve fitting sof tware, are given in this report for hot and cold characteristics
where possible. The resulting values f or V
which is limited to that plotted.
14.2 D.C. Thermal Impedance Calculation
given below:
T
A 1.165688 A 1.018458
B 0.07400899 B -0.01932421
C 0.38623E-03 C 0.24243E-03
D -0.0178339 D 6.00218E-03
vs VT, on page 7 is represented in two ways;
T
and rs tangent used for rating purposes and
o
()
ln
agree with the true device characteristic over a curr ent range,
T
25°C Coefficients 125°C Coefficients
−
=
∑
=
p
np
1
pt
1
t
τ
p
−⋅=
err
⋅+⋅+⋅+=
in
T
IDICIBAV
TTTT
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
= Thermal resistance at time t.
r
t
r
= Amplitude of pth term.
τ
= Time Constant of rth term.
D.C. Double Side Cooled
Term 1 2 3 4
r
p
τ
p
Term12345
r
p
τ
p
0.12000552 0.01609235 8.812673×10
0.3391689 0.09405764 0.12195269 2.196197×10
D.C. Single Side Cooled
0.06157697 8.431182×10
2.136132 1.212898 0.1512408 0.04244 2.889595×10
-3
0.01031315 0.01613806 5.181088×10
-3
3.659765×10
-3
-3
-3
-3
Data Sheet. Types P0848YS04x to P0848YS05 Issue 1 Page 6 of 12 April, 2001
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P0848YS04x to P0848YS05x
Curves
Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance
10000
0.1
SSC 0.064K/W
DSC 0.032K/W
Tj = 125°C Tj = 25°C
(A)
T
1000
Instantaneous on-state current - I
0.01
(K/W)
(th)t
0.001
Transient Thermal Impedance - Z
0.0001
P0848YS04x - 05x
100
00.511.522.533.5
Instantaneous on-state volt age - V
Issue 1
(V)
T
0.00001
0.0001 0.001 0.01 0.1 1 10 100
Time (s)
P0848YS04x - 05x
Issue 1
Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves
8
P0848YS04x - 05x
Issue 1
Tj=25°C
20
P0848YS04x - 05x
Tj=25°C
18
Issue 1
16
6
14
(V)
GT
12
Max VG dc
10
8
Gate Trigger Voltage - V
PG Max 30W dc
(V)
GT
4
IGT, V
GT
Gate Trigger Voltage - V
Max VG dc
6
2
125°C
25°C
-10°C
-40°C
4
PG 2W dc
2
IGD, V
GD
0
Min VG dc
0 0.25 0.5 0.75
Gate Trigger Current - I
Data Sheet. Types P0848YS04x to P0848YS05 Issue 1 Page 7 of 12 April, 2001
(A)
GT
0
0246810
Gate Trigger Current - I
Min VG dc
(A)
GT
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P0848YS04x to P0848YS05x
Figure 5 - Total recovered charge, Q
10000
1000
(µC)
rr
100
Total recovered charge - Q
10
10 100 1000
Commutation rate - di/dt (A/µs)
rr
2000A
1500A
1000A
500A
Tj = 125°C
P0848YS04x - 05x
Issue 1
Figure 6 - Recovered charge, Qra (50% chord)
10000
2000A
1000
(µC)
ra
100
Recovered charge - Q
10
10 100 1000
Commutation rate - di/dt (A/µs)
1500A
1000A
500A
Tj = 125°C
P0848YS04x - 05x
Issue 1
Figure 7 - Peak reverse recovery current, I
1000
2000A
1500A
1000A
500A
(A)
rm
100
Reverse recovery current - I
Tj = 125°C
P0848YS04x - 05x
10
10 100 1000
Commutation r at e - d i/ dt (A/µs )
Issue 1
rm
Figure 8 - Maximum recovery time, trr (50% chord)
10
(µs)
rr
2000A
1500A
1000A
500A
Reverse recovery time - t
Tj = 125°C
P0848YS04x - 05x
Issue 1
1
10 100 1000
Commutation rate - di/dt (A/µs)
Data Sheet. Types P0848YS04x to P0848YS05 Issue 1 Page 8 of 12 April, 2001
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A
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P0848YS04x to P0848YS05x
Figure 9 - Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse
10
1.00E+02
P0848YS04x - 05x
Issue 1
Tj=125°C
2000
1500A
(mJ)
r
1000A
500A
Energy per pulse - E
Snubber value
= 0.22µF, 10
Tj = 125°C
V
= 0.67% V
rm
P0848YS04x - 05x
Issue 1
1
10 100 1000
Commutation rate - di/dt (A/µs)
Ω
RRM
1.00E+01
3kA
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
2kA
1kA
500A
250A
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Figure 11 - Sine wave frequency ratings Figure 12 - Sine wave frequency ratings
1.00E+05
1.00E+04
500A
1kA
P0848YS04x - 05x
100% Duty Cycle
Issue 1
THs=55°C
1.00E+05
1.00E+04
250A
100% Duty Cycle
500A
1kA
1.00E+03
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
Data Sheet. Types P0848YS04x to P0848YS05 Issue 1 Page 9 of 12 April, 2001
2kA
3kA
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse Width (s)
Frequency (Hz)
1.00E+02
1.00E+01
1.00E+00
2kA
3kA
THs=85°C
P0848YS04x - 05x
Issue 1
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
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P0848YS04x to P0848YS05x
Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings
1.00E+05
250A
500A
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E+00
1kA
2kA
3kA
THs=55°C
di/dt=100A/µs
P0848YS04x - 05x
Issue 1
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
Pulse width (s)
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
250A
500A
1kA
2kA
3kA
THs=85°C
di/dt=100A/µs
P0848YS04x - 05x
Issue 1
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
Pulse width (s)
Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+04
250A
500A
P0848YS04x - 05x
100% Duty Cycle
Issue 1
di/dt=500A/µs
THs=55°C
1.00E+05
1.00E+04
250A
500A
P0848YS04x - 05x
Issue 1
di/dt=500A/µs
100% Duty Cycle
THs=85°C
1kA
1.00E+03
Frequency (Hz)
2kA
1.00E+02
3kA
1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Data Sheet. Types P0848YS04x to P0848YS05 Issue 1 Page 10 of 12 April, 2001
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E+00
1kA
2kA
3kA
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
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Positive development in power electronics
P0848YS04x to P0848YS05x
Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse
1.00E+02
P0848YS04x - 05x
Issue 1
di/dt=100A/µs
Tj=125°C
1.00E+02
P0848YS04x - 05x
Issue 1
di/dt=500A/µs
Tj=125°C
1.00E+01
3kA
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
2kA
1kA
500A
250A
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Figure 19 - Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
100000
P0848YS04x - 05x
Issue 1
Tj (initial) = 125°C
(A)
TSM
1.00E+01
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
1.00E-05 1.00E-04 1.00E-03 1.00E-02
3kA
2kA
1kA
I2t: V
Pulse width (s)
≤
10V
RRM
500A
250A
1.00E+07
10000
Total peak half sine surge current - I
1000
I2t: 60% V
I
TSM
I
TSM
: V
RRM
: 60% V
RRM
≤
10V
2
2
1.00E+06
RRM
1.00E+05
135101 510 50100
Duration of surge (ms) Duration of surge (cycles @ 50Hz)
Data Sheet. Types P0848YS04x to P0848YS05 Issue 1 Page 11 of 12 April, 2001
s)
t (A
Maximum I
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Outline Drawing & Ordering Information
P0848YS04x to P0848YS05x
ORDERING INFORMATION
P0848 YS
Fixed
Type Code
Typical order code: P0848YS04D – 400V V
Fixed
Outline Code
, 20µs tq, 27.7mm clamp height capsule.
DRM
(Please quote 10 digit code as bel ow)
♦ ♦
♦ ♦ ♦♦♦♦
♦ ♦♦ ♦
Off-state Voltage Code
V
DRM
04-05
/100
B=12µs, C=15µs, D=20µs
Code
t
q
UK: Westcode Semiconductors Ltd.
P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.
Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448
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E-Mail: WSL.sales@westcode.com
USA: Westcode Semiconductors Inc.
3270 Cherry Avenue, Long Beach, California 90807
Tel: 562 595 6971 Fax: 562 595 8182
Internet: http://www.westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors
Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior
notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessari ly subject
to the conditions and limits contained in this report.
Data Sheet. Types P0848YS04x to P0848YS05 Issue 1 Page 12 of 12 April, 2001
E-Mail: WSI.sales@westcode.com
© Westcode Semiconductors Ltd.
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