Mean on-state current. T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current. T
D.C. on-state current. T
Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, VRM=0.6V
2
I
t capacity for fusing tp=10ms, V
Maximum rate of rise of on-state current (repetitive), (Note 6)150A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6)300A/µs
Peak reverse gate voltage5V
Mean forward gate power5W
Peak forward gate power30W
Non-trigger gate voltage, (Note 7)0.25V
Operating temperature range-40 to +125°C
Storage temperature range-40 to +150°C
=55°C, (note 2)5177A
sink
=85°C, (note 2)3626A
sink
=85°C, (note 3)2262A
sink
=25°C, (note 2)10109A
sink
=25°C, (note 4)9033A
sink
, (note 5)67.5kA
RRM
≤
10V, (note 5)
RM
, (note 5)22.8×10
RRM
≤
10V, (note 5)
RM
Data Sheet Issue:- 1
MAXIMUM
LIMITS
MAXIMUM
LIMITS
75kA
6
28.1×10
6
UNITS
UNITS
A2s
A2s
Notes: -
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
7)
Rated V
Data Sheet. Types N5177FC200 to N5177FC280 Issue 1.Page 1 of 10March, 2002
, ITM=4000A, IFG=2A, t
DRM
.
DRM
≤
0.5µs, T
r
case
=125°C.
WESTCODE
Positive development in power electronics
Characteristics
N5177FC200 to N5177FC280
PARAMETERMIN.TYP.MAX. TEST CONDITIONS
V
Maximum peak on-state voltage--1.40ITM=6000AV
TM
V
Threshold voltage--0.80V
0
r
Slope resistance--0.1
S
dv/dt Critical rate of rise of off-state voltage1000--VD=80% V
I
Peak off-state current--300Rated V
DRM
I
Peak reverse current--300Rated V
RRM
V
Gate trigger voltage--3.0V
GT
I
Gate trigger current--300
GT
I
Holding current--1000Tj=25°CmA
H
t
Gate controlled turn-on delay time-1.02.0
gd
t
Turn-on time-1.53.0
gt
Q
Recovered Charge-11000-µC
rr
Q
Recovered Charge, 50% chord-72508500µC
ra
I
Reverse recovery current-275-A
rm
t
Reverse recovery time, 50% chord-50-
rr
-400-
t
Turn-off time
q
-700-
Thermal resistance, junction to
R
θ
heatsink
--0.0065 Double side cooledK/W
--0.013 Single side cooledK/W
=25°C, VD=10V, IT=3A
T
j
=2A, tr=0.5µs, VD=67%V
I
FG
I
=2000A, di/dt=10A/µs, Tj=25°C
TM
I
=4000A, tp=2ms, di/dt=10A/µs, Vr=50V
TM
ITM=4000A, tp=2ms, di/dt=10A/µs,
V
=50V, Vdr=67%V
r
ITM=4000A, tp=2ms, di/dt=10A/µs,
V
=50V, Vdr=67%V
r
, Linear ramp, gate o/c
DRM
DRM
RRM
(Note 1)
DRM
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
,
UNITS
m
V/µs
mA
mA
mA
µs
µs
µs
FMounting force81-99kN
WtWeight-2.8-kg
Ω
Notes: -
Unless otherwise indicated Tj=125°C.
1)
Data Sheet. Types N5177FC200 to N5177FC280 Issue 1.Page 2 of 10March, 2002
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Computer Modelling Parameters
5.1 Device Dissipation Calculations
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
∆
T
AV
=
R
th
max
−=∆
TTT
Hsj
⋅⋅⋅++−
Wrff4VV
=
I
AV
Where V0=0.80V, rs=0.10m
R
= Supplementary thermal impedance, see table below.
th
ff
= Form factor, see table below.
Conduction Angle30°60°90°120°180°270°d.c.
Square wave Double Side Cooled0.007170.007070.006980.006890.006730.006520.0065
Square wave Single Side Cooled0.01370.013590.013490.01340.013230.013010.013
Sine wave Double Side Cooled0.007090.006970.006870.006780.00654
Sine wave Single Side Cooled0.01360.013480.013370.013280.01303
Conduction Angle30°60°90°120°180°270°d.c.
Square wave3.462.4521.731.411.151
Sine wave3.982.782.221.881.57
Ω,
⋅⋅
rff2
s
Supplementary Thermal Impedance
AVs00
and:
Form Factors
W
Data Sheet. Types N5177FC200 to N5177FC280 Issue 1.Page 3 of 10March, 2002
WESTCODE
p
p
5.2 Calculating VT using ABCD Coefficients
Positive development in power electronics
N5177FC200 to N5177FC280
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
The constants, derived by curve fitting soft ware, are given below for both hot and c old c harac teris tic s. T he
resulting values for V
that plotted.
The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors
Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior
notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.
Data Sheet. Types N5177FC200 to N5177FC280 Issue 1.Page 10 of 10March, 2002