Westcode Semiconductors N4085ZC080, N4085ZC120 Data Sheet
Phase Control Thyristor
Types N4085ZC080 to N4085ZC120
Absolute Maximum Ratings
Date:- 30 Jan, 2003
Data Sheet Issue:- 1
Old Type No.: N1600CH02-12
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1) 800-1200 V
Non-repetitive peak off-state voltage, (note 1) 800-1200 V
Repetitive peak reverse voltage, (note 1) 800-1200 V
Non-repetitive peak reverse voltage, (note 1) 900-1300 V
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)M
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
(di/dt)
V
RGM
P
G(AV)
P
GM
T
j op
T
stg
Maximum average on-state current, T
Maximum average on-state current. T
Maximum average on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, Vrm=0.6V
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)
2
t capacity for fusing tp=10ms, Vrm=0.6V
2
I
t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
Critical rate of rise of on-state current (repetitive, 60s), (Note 6) 150 A/µs
cr
Critical rate of rise of on-state current (non-repetitive), (Note 6) 300 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 5 W
Peak forward gate power 30 W
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
sink
=25°C, (note 4)
sink
=55°C, (note 2)
sink
=85°C, (note 2)
sink
=85°C, (note 3)
sink
=25°C, (note 2)
, (note 5) 64.0 A
RRM
, (note 5) 20.5×10
RRM
MAXIMUM
LIMITS
MAXIMUM
LIMITS
4085 A
2743 A
1609 A
8161 A
6841 A
70.0 A
6
24.5×10
6
UNITS
UNITS
A2s
A2s
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
=67% V
D
Data Sheet. Types N4085ZC080 to N4085ZC120 Issue 1 Page 1 of 11 January, 2003
, IFG=2A, tr≤0.5µs, T
DRM
initial.
j
case
=125°C.
below 25°C.
j
WESTCODE
WESTCODE An IXYS Company Phase Control Thyristor Types N4085ZC080 to N4085ZC120
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Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
V
TM
V
TM
V
T0
r
T
(dv/dt)crCritical rate of rise of off-state voltage 1000 - - VD=80% V
I
DRM
I
RRM
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rr
t
rr
t
q
R
thJK
Maximum peak on-state voltage - - 1.06 ITM=3000A V
Maximum peak on-state voltage - - 1.55 ITM=12300A V
Threshold voltage - - 0.85 V
Slope resistance - - 0.07
, linear ramp, gate o/c V/µs
DRM
Peak off-state current - - 200 Rated V
Peak reverse current - - 200 Rated V
Gate trigger voltage - - 3.0 V
T
Gate trigger current - - 300
Gate non-trigger voltage - - 0.25 Rated V
DRM
RRM
=25°C VD=10V, IT=3A
j
DRM
mΩ
mA
mA
mA
V
Holding current - - 1000 Tj=25°C mA
Gate-controlled turn-on delay time 0.5 1.0 µs
Turn-on time - 1.5 2.0
=67% V
V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
, IT=1000A, di/dt=10A/µs,
DRM
µs
Recovered charge - 1850 - µC
Recovered charge, 50% Chord - 1000 1500 µC
Reverse recovery current - 110 - A
Reverse recovery time - 18.0 -
-80-
Turn-off time
- 130 -
Thermal resistance, junction to heatsink
- - 0.011 Double side cooled K/W
I
=1000A, tp=1000µs, di/dt=10A/µs,
TM
V
=50V
r
ITM=1000A, tp=1000µs, di/dt=10A/µs,
V
=50V, Vdr=80%V
r
, dVdr/dt=20V/µs
DRM
ITM=1000A, tp=1000µs, di/dt=10A/µs,
V
=50V, Vdr=80%V
r
, dVdr/dt=200V/µs
DRM
µs
µs
- - 0.022 Single side cooled K/W
F Mounting force 27 - 47 kN
W
Weight - 1.7 - kg
t
Notes:-
1) Unless otherwise indicated T
Data Sheet. Types N4085ZC080 to N4085ZC120 Issue 1 Page 2 of 11 January, 2003
=125°C.
j
WESTCODE
WESTCODE An IXYS Company Phase Control Thyristor Types N4085ZC080 to N4085ZC120
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
08 800 900 560
10 1000 1100 700
12 1200 1300 810
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
(t
p1
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
should remain flowing for the same duration as the anode current and have a
G
GT
.
8.0 Computer Modelling Parameters
Data Sheet. Types N4085ZC080 to N4085ZC120 Issue 1 Page 3 of 11 January, 2003
WESTCODE
WESTCODE An IXYS Company Phase Control Thyristor Types N4085ZC080 to N4085ZC120
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8.1 Device Dissipation Calculations
T
2
4
I
=
AV
Where V0=0.85V, rs=0.07mΩ,
R
= Supplementary thermal impedance, see table below and
th
00
rff
2
⋅⋅
s
WrffVV
⋅⋅⋅++−
AVs
and:
W
AV
=
∆
R
th
max
TTT
−=∆
Hsj
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 3.464 2.449 2 1.732 1.414 1.149 1
Sine wave 3.98 2.778 2.22 1.879 1.57
0.0124 0.0122 0.0121 0.0119 0.0117 0.0113 0.011
0.0249 0.0248 0.0247 0.0246 0.0244 0.0241 0.022
0.0168 0.0140 0.0131 0.0118 0.0112
0.0249 0.0247 0.0246 0.0244 0.0241
Form Factors
8.2 Calculating VT using ABCD Coefficients
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for V
that plotted.
given below:
T
T
A
B
C
D
vs. VT, on page 6 is represented in two ways;
T
and rs tangent used for rating purposes and
0
()
agree with the true device characteristic over a current range, which is limited to
25°C Coefficients 125°C Coefficients
0.724445691
0.033101532
3.973700×10
1.66727×10
A
B
-5
-3
C
D
0.611648808
0.017470315
2.412100×10
4.31084×10
IDICIBAV ⋅+⋅+⋅+= ln
TTTT
-5
-3
T
in
Data Sheet. Types N4085ZC080 to N4085ZC120 Issue 1 Page 4 of 11 January, 2003
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