Westcode Semiconductors N3839TC300, N3839TC350 Data Sheet
Date:- 22 Oct, 2003
WESTCODE
An
Absolute Maximum Ratings
V
DRM
V
DSM
V
RRM
V
RSM
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)M
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
V
RGM
P
G(AV)
P
GM
T
j op
T
stg
IXYS
Company
Phase Control Thyristor
Types N3839TC300 to N3839TC350
Old Type No.: N1663CH30-35
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) 3000-3500 V
Non-repetitive peak off-state voltage, (note 1) 3000-3500 V
Repetitive peak reverse voltage, (note 1) 3000-3500 V
Non-repetitive peak reverse voltage, (note 1) 3100-3600 V
OTHER RATINGS
Maximum average on-state current, T
Maximum average on-state current. T
Maximum average on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, Vrm=60%V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, Vrm=60%V
2
t capacity for fusing tp=10ms, V
I
Critical rate of rise of on-state current (continuous, 50Hz), (Note 6) 75 A/µs
Critical rate of rise of on-state current (repetitive, 50Hz, 60s), (Note 6) 150 A/µs(di/dt)
cr
Critical rate of rise of on-state current (non-repetitive), (Note 6) 300 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 5 W
Peak forward gate power 50 W
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
=25°C, (note 4)
sink
rm
=55°C, (note 2)
sink
=85°C, (note 2)
sink
=85°C, (note 3)
sink
=25°C, (note 2)
sink
≤
10V, (note 5)
rm
RRM
≤
10V, (note 5)
, (note 5) 49.5 kA
RRM
, (note 5) 12.25×10
Data Sheet Issue:- 1
MAXIMUM
LIMITS
MAXIMUM
LIMITS
3839 A
2668 A
1644 A
7527 A
6647 A
55.0 kA
6
15.13×10
6
UNITS
UNITS
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
Data Sheet. Types N3839TC300 to N3839TC350 Issue 1 Page 1 of 11 October, 2003
, IGM=4A, t
DRM
≤
0.5µs, T
r
=125°C.
case
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Characteristics
Phase Control Thyristor Types N3839TC300 to N3839TC350
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
TM
V
T0
r
T
Maximum peak on-state voltage
Threshold voltage - - 0.95 V
Slope resistance - - 0.14
(dv/dt)crCritical rate of rise of off-state voltage 1000 - - VD=80% V
I
I
V
I
V
I
t
t
Q
Q
I
t
t
R
DRM
RRM
GT
GT
GD
H
gd
gt
rr
ra
rr
rr
q
thJK
Peak off-state current - - 250 Rated V
Peak reverse current - - 250 Rated V
Gate trigger voltage - - 3.0 V
Gate trigger current - - 300
Gate non-trigger voltage - - 0.25 Rated V
Holding current - - 1000 Tj=25°C mA
Gate-controlled turn-on delay time - 1.0 1.5 µs
Turn-on time - 3.0 4.0
Recovered charge - 13000 - µC
Recovered charge, 50% Chord - 7800 8500 µC
Reverse recovery current - 280 - A
Reverse recovery time - 55 -
Turn-off time
Thermal resistance, junction to heatsink
- - 1.74 ITM=6000A
- - 2.51 I
- 600 -
- 1100 -
=11500A
TM
DRM
RRM
=25°C VD=10V, IT=3A
T
j
DRM
=67% V
V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
I
=4000A, tp=2000µs, di/dt=10A/µs,
TM
V
=100V
r
ITM=4000A, tp=2000µs, di/dt=10A/µs,
V
=100V, Vdr=80%V
r
ITM=4000A, tp=2000µs, di/dt=10A/µs,
V
=100V, Vdr=80%V
r
- - 0.008 Double side cooled K/W
- - 0.016 Single side cooled K/W
(Note 1)
, linear ramp, gate o/c
DRM
, IT=6000A, di/dt=10A/µs,
DRM
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
UNITS
V
m
V/µs
mA
mA
mA
V
µs
µs
µs
F Mounting force 63 - 77 kN
W
Weight - 1.23 - kg
t
Ω
Notes:-
Unless otherwise indicated Tj=125°C.
1)
Data Sheet. Types N3839TC300 to N3839TC350 Issue 1 Page 2 of 11 October, 2003
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Phase Control Thyristor Types N3839TC300 to N3839TC350
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
30 3000 3100 1800
32 3200 3300 1920
34 3400 3500 2040
35 3500 3600 2100
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turnon on a non-repetitive basis. For repetitive performance (1 min), the on-state rate of rise of current must
not exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to
the total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
(t
p1
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
should remain flowing for the same duration as the anode current and have a
G
.
GT
8.0 Computer Modelling Parameters
Data Sheet. Types N3839TC300 to N3839TC350 Issue 1 Page 3 of 11 October, 2003
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8.1 Device Dissipation Calculations
I
AV
Where V0=0.95V, rs=0.14m
R
= Supplementary thermal impedance, see table below and
th
ff
= Form factor, see table below.
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
An IXYS Company
2
=
00
2
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 3.464 2.449 2 1.732 1.414 1.149 1
Sine wave 3.98 2.778 2.22 1.879 1.57
4
Ω,
2
⋅⋅⋅++−
WrffVV
AVs
2
⋅⋅
rff
s
Supplementary Thermal Impedance
0.00915 0.00907 0.00898 0.00891 0.00878 0.00864 0.008
0.01795 0.01781 0.01772 0.01759 0.01731 0.01678 0.016
0.00911 0.00903 0.00895 0.00884 0.00867
0.01784 0.01775 0.01763 0.01735 0.01682
and:
Form Factors
Phase Control Thyristor Types N3839TC300 to N3839TC350
∆
T
AV
=
R
max
th
−=∆
TTT
Hsj
W
8.2 Calculating VT using ABCD Coefficients
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for V
that plotted.
given below:
T
T
A
B
C
D
vs. VT, on page 6 is represented in two ways;
T
and rT tangent used for rating purposes and
0
in
T
()
ln
agree with the true device characteristic over a current range, which is limited to
25°C Coefficients 125°C Coefficients
1.1
-2.18×10
9.00×10
2.47×10
-13
-5
-14
A
B
C
D
1.07×10
1.40×10
-1.04×10
0.9
⋅+⋅+⋅+=
IDICIBAV
TTTT
-13
-4
-14
Data Sheet. Types N3839TC300 to N3839TC350 Issue 1 Page 4 of 11 October, 2003
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