Westcode Semiconductors N3790T#240, N3790T#280 Data Sheet
Phase Control Thyristor
Types N3790T#240 to N3790T#280
Development Type No.: NX223TJ280
Absolute Maximum Ratings
Date:- 28th August, 2012
Data Sheet Issue:- A2
Provisional Data
V
DRM
V
DSM
V
RRM
V
RSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) 2400-2800 V
Non-repetitive peak off-state voltage, (note 1) 2400-2800 V
Repetitive peak reverse voltage, (note 1) 2400-2800 V
Non-repetitive peak reverse voltage, (note 1) 2500-2900 V
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)M
I
T(d.c.)
I
TSM
I
TSM2
I2t I2t capacity for fusing tp=10ms, Vrm=60%V
I2t
(di/dt)crCritical rate of rise of on-state current (note 6)
V
RGM
P
G(AV)
P
GM
T
j op
T
stg
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
Maximum average on-state current, T
Maximum average on-state current. T
Maximum average on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
=25°C, (note 4) 6610 A
sink
Peak non-repetitive surge tp=10ms, Vrm=60%V
=55°C, (note 2) 3790 A
sink
=85°C, (note 2) 2655 A
sink
=85°C, (note 3) 1405 A
sink
=25°C, (note 2) 7410 A
sink
, (note 5) 49.5 kA
RRM
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)
, (note 5) 12.3×10
RRM
2
I
t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
(continuous, 50Hz) 100
(repetitive, 50Hz, 60s) 200
(non-repetitive) 400
Peak reverse gate voltage 5 V
Mean forward gate power 5 W
Peak forward gate power 40 W
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
below 25°C.
j
initial.
=67% V
D
, ITM=2000A, IFG=2A, tr≤0.5µs, T
DRM
j
=125°C.
case
MAXIMUM
LIMITS
MAXIMUM
LIMITS
UNITS
UNITS
55.0 kA
15.1×10
6
6
A2s
A2s
A/µs
Data Sheet. Types N3790T#240 to N3790T#280 Issue A2 Page 1 of 5 August, 2012
Phase Control Thyristor Types N3790T#240 to N3790T#280
Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
V
TM
V
TM
V
T0
r
T
(dv/dt)crCritical rate of rise of off-state voltage 1000 - - VD=80% V
I
DRM
I
RRM
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rr
t
rr
t
q
Maximum peak on-state voltage - - 1.50 ITM=4000A V
Maximum peak on-state voltage - - 2.10 ITM=8000A V
Threshold voltage - - 0.90 V
Slope resistance - - 0.15
, linear ramp, gate o/c
DRM
Peak off-state current - - 250 Rated V
Peak reverse current - - 250 Rated V
Gate trigger voltage - - 3.0 V
T
Gate trigger current - - 300
Gate non-trigger voltage
- - 0.25 Rated V
DRM
RRM
=25°C VD=10V, IT=3A
j
DRM
mΩ
V/µs
mA
mA
mA
V
Holding current - - 1000 Tj=25°C mA
Gate-controlled turn-on delay time - 0.7 1.5 µs
Turn-on time - 2.0 4.0
=67% V
V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
, IT=2000A, di/dt=10A/µs,
DRM
µs
Recovered charge - 7000 7700 µC
Recovered charge, 50% Chord - 4500 - µC
Reverse recovery current - 210 - A
Reverse recovery time - 43 -
- 250 -
Turn-off time
- 400 -
=4000A, tp=2000µs, di/dt=10A/µs,
I
TM
V
=100V
r
=4000A, tp=2000µs, di/dt=10A/µs,
I
TM
V
=100V, Vdr=80%V
r
=4000A, tp=2000µs, di/dt=10A/µs,
I
TM
V
=100V, Vdr=80%V
r
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
µs
µs
- - 0.008 Double side cooled K/W
R
thJK
Thermal resistance, junction to heatsink
- - 0.013 Anode side cooled K/W
- - 0.020 Cathode side cooled K/W
F Mounting force 60 - 70 Note 2. kN
W
t
Weight - 1.15 - kg
Notes:-
1) Unless otherwise indicated T
2)
For other clamp forces, please consult factory.
=125°C.
j
Data Sheet. Types N3790T#240 to N3790T#280 Issue A2 Page 2 of 5 August, 2012
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