Datasheet N3012ZC200, N3012ZC260 Datasheet (Westcode Semiconductors)

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Date:- 15 Aug, 2002

WESTCODE

An IXYS Company

Phase Control Thyristor

Types N3012ZC200 to N3012ZC260

Old Type No.: N900CH20-26

Absolute Maximum Ratings

VOLTAGE RATINGS

DRM

DSM

RRM

RSM

T(AV)M

T(RMS)

T(d.c.)

TSM

TSM2

I2tI I2t

(di/dt)

RGM

G(AV)

j op

stg

Repetitive peak off-state voltage, (note 1) 2000-2600 V Non-repetitive peak off-state voltage, (note 1) 2000-2600 V Repetitive peak reverse voltage, (note 1) 2000-2600 V Non-repetitive peak reverse voltage, (note 1) 2100-2700 V

OTHER RATINGS

Maximum average on-state current, T Maximum average on-state current. T Maximum average on-state current. T Nominal RMS on-state current, T D.C. on-state current, T

=25°C, (note 4) 4056 A

sink

Peak non-repetitive surge tp=10ms, Vrm=0.6V Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)

t capacity for fusing tp=10ms, Vrm=0.6V

t capacity for fusing tp=10ms, Vrm≤10V, (note 5)

Critical rate of rise of on-state current (repetitive), (Note 6) 150 A/µs

Critical rate of rise of on-state current (non-repetitive), (Note 6) 300 A/µs Peak reverse gate voltage 5 V Mean forward gate power 5 W Peak forward gate power 30 W Operating temperature range -40 to +125 °C Storage temperature range -40 to +150 °C

sink

=25°C, (note 2) 5922 A

sink

Data Sheet Issue:- 1

MAXIMUM

LIMITS

MAXIMUM

LIMITS

=55°C, (note 2) 3012 A =85°C, (note 2) 2084 A =85°C, (note 3) 1275 A

, (note 5) 45.1 kA

RRM

49.7 kA

, (note 5) 10.2×10

RRM

12.4×10

UNITS

A2s A2s

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

=67% V

Data Sheet. Types N3012ZC200 to N3012ZC260 Issue 1 Page 1 of 11 August, 2002

, IFG=2A, tr≤0.5µs, T

DRM

initial.

case

=125°C.

below 25°C.

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Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

(dv/dt)crCritical rate of rise of off-state voltage 1000 - - VD=80% V I

DRM

RRM

thJK

Maximum peak on-state voltage - - 1.4 ITM=3000A V Threshold voltage - - 0.92 V Slope resistance - - 0.16

, linear ramp, gate o/c

DRM

Peak off-state current - - 200 Rated V Peak reverse current - - 200 Rated V Gate trigger voltage - - 3.0 V

Gate trigger current - - 300 Gate non-trigger voltage - - 0.25 Rated V

DRM

RRM

=25°C VD=10V, IT=3A

DRM

mΩ

V/µs

mA mA

V Holding current - - 1000 Tj=25°C mA Gate-controlled turn-on delay time 1.0 2.0 µs Turn-on time - 2.0 3.0

=67% V

=2A, tr=0.5µs, Tj=25°C

, IT=2000A, di/dt=10A/µs,

DRM

µs Recovered charge - 5300 - µC Recovered charge, 50% Chord - 3050 3600 µC Reverse recovery current - 175 - A Reverse recovery time - 35 -

- 300 -

Turn-off time

- 600 -

Thermal resistance, junction to heatsink

- - 0.011 Double side cooled K/W

=2000A, tp=1000µs, di/dt=10A/µs,

=50V

ITM=2000A, tp=1000µs, di/dt=10A/µs, V

=50V, Vdr=80%V

, dVdr/dt=20V/µs

DRM

ITM=2000A, tp=1000µs, di/dt=10A/µs, V

=50V, Vdr=80%V

, dVdr/dt=200V/µs

DRM

µs

- - 0.022 Single side cooled K/W F Mounting force 27 - 47 kN W

Weight - 1.7 - kg

Notes:-

1) Unless otherwise indicated T

Data Sheet. Types N3012ZC200 to N3012ZC260 Issue 1 Page 2 of 11 August, 2002

=125°C.

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Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

DRM VDSM VRRM

RSM

DC V

20 2000 2100 1250 22 2200 2300 1350 24 2400 2500 1450 26 2600 2700 1550

2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.

5.0 Snubber Components When selecting snubber components, care m ust be taken not to use ex cessively large values of snubber

capacitor or excessively sm all values of snubber re sistor. Such exc essive com ponent values may lead to device damage due to the large resultant values of snubber disc harge current. If r equired, please consult the factory for assistance.

6.0 Rate of rise of on-state current The maxim um un-primed rate of r ise of on- s tate c urr ent must not exceed 300A/µs at any time during turn-

on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network.

7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V

is assumed. This gate drive must be applied when using the full di/dt capability of the device.

4A/µs

The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its dur ation

) should be 20µs or sufficient to allow the anode current to reach ten tim es IL, whichever is greater.

Otherwise, an increase in pulse current c ould be needed to supply the necessary charge to trigger. The ‘back-porch’ current I magnitude in the order of 1.5 times I

should remain flowing for the same duration as the anode current and have a

8.0 Computer Modelling Parameters

Data Sheet. Types N3012ZC200 to N3012ZC260 Issue 1 Page 3 of 11 August, 2002

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8.1 Device Dissipation Calculations

Where VT0=0.92V, rT=0.16mΩ,

= Supplementary thermal impedance, see table below and

rff

⋅⋅

WrffVV

⋅⋅⋅++−

AVTTT

and:

∆

max

TTT

−=∆

Hsj

ff = Form factor, see table below.

Supplementary Thermal Impedance

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave Double Side Cooled

Square wave Single Side Cooled

Sine wave Double Side Cooled

Sine wave Single Side Cooled

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave 3.464 2.449 2 1.732 1.414 1.149 1

Sine wave 3.98 2.778 2.22 1.879 1.57

0.0124 0.0122 0.0121 0.0119 0.0117 0.0113 0.011

0.0249 0.0248 0.0247 0.0246 0.0244 0.0241 0.022

0.0168 0.0140 0.0131 0.0118 0.0112

0.0249 0.0247 0.0246 0.0244 0.0241

Form Factors

8.2 Calculating VT using ABCD Coefficients

The on-state characteristic I (i) the well established V (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V

terms of I

The constants, derived by curve fitting soft ware, are given below for both hot and c old c harac teris tic s. T he resulting values for V that plotted.

given below:

A 0.498019438 A 1.049896747 B 0.04122506 B -0.0399690371 C 9.4563×10 D 5.27375904×10

vs. VT, on page 6 is represented in two ways;

and rs tangent used for rating purposes and

()

agree with the true device characteristic over a current range, which is limited to

25°C Coefficients 125°C Coefficients

-5

-3

C 5.2302×10 D 9.96560697×10

IDICIBAV ⋅+⋅+⋅+= ln

TTTT

-5

-3

Data Sheet. Types N3012ZC200 to N3012ZC260 Issue 1 Page 4 of 11 August, 2002

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8.3 D.C. Thermal Impedance Calculation

−

 

∑

Where p = 1 to n, n is the number of terms in the series and:

t = Duration of heating pulse in seconds. r

= Thermal resistance at time t.

= Amplitude of pth term.

= Time Constant of rth term.

The coefficients for this device are shown in the tables below:

D.C. Double Side Cooled

Term 1 2 3 4

6.72×10

1.0226 0.226 0.0586 9.06×10

-3

2.78×10

 

-3



−⋅=



err

 

9.476×10

-4

7.12×10

-4

-3

D.C. Single Side Cooled

Term1234

9.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1

(ii) Q

is based on a 150µs integration time i.e.

(iii)

FactorK =

0.01688 4.42×10

7.055 0.5206 0.1198 0.0128

1 2

-3

150

1.79×10

dtiQ

rmrr

∫

-3

Fig. 1

8.72×10

-4

Data Sheet. Types N3012ZC200 to N3012ZC260 Issue 1 Page 5 of 11 August, 2002

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Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

10000

Tj = 25°C

Tj = 125°C

0.1

N3012ZC200-260

Issue 1

SSC

0.022K/W

(A)

1000

Instantaneous On-state current - I

N3012ZC200-260

Issue 1

100

00.511.522.5

Instantaneous On-state voltage - V

(V)

0.01

0.001

Transient thermal impedance (K/W)

0.0001

0.00001 1E-05 0.0001 0.001 0.01 0.1 1 10 100

Time (s)

DSC

0.011K/W

Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves

N3012ZC200-260

Issue 1

Tj=25°C

N3012ZC200-260

Tj=25°C

Issue 1

Max VG dc

(V)

IGT, V

Gate Voltage - V

IGD, V

0 0.2 0.4 0.6 0.8 1

Data Sheet. Types N3012ZC200 to N3012ZC260 Issue 1 Page 6 of 11 August, 2002

25°C

125°C

Gate Current - I

-10°C

-40°C

(A)

Min VG dc

Max VG dc

(V)

Gate Voltage - V

PG 5W dc

0246810

Gate Current - I

PG Max 30W dc

Min VG dc

(A)

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Figure 5 - Total recovered charge, Q

100000

(µC)

10000

Recovered charge - Q

N3012ZC200-260

1000

1 10 100 1000

di/dt (A/µs)

Tj=125°C

Issue 1

4000A 3000A 2000A 1000A

Figure 6 - Recovered charge, Qra (50% chord)

10000

N3012ZC200-260

Issue 1

Tj=125°C

, 50% chord (µC)

Recovered charge - Q

1000

1 10 100 1000

di/dt (A/µs)

4000A 3000A

2000A

1000A

Figure 7 - Peak reverse recovery current, I

10000.00

(A)

1000.00

Reverse recovery current - I

N3012ZC200-260

Issue 1

Tj=125°C

100.00 1101001000

di/dt (A/µs)

4000A 3000A 2000A 1000A

Figure 8 - Maximum recovery time, trr (50% chord)

100

(µs)

Reverse recovery time (50% chord) - t

1 10 100 1000

di/dt (A/µs)

N3012ZC200-260

Issue 1

Tj=125°C

4000A 3000A 2000A 1000A

Data Sheet. Types N3012ZC200 to N3012ZC260 Issue 1 Page 7 of 11 August, 2002

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Figure 9 – On-state current vs. Power dissipation – Double Side Cooled (Sine wave)

10000

9000

8000

7000

6000

5000

4000

Maximum forward dissipation (W)

3000

2000

1000

0 1000 2000 3000 4000

Mean forward current (A) (Whole cycle averaged)

30°

90°

60°

N3012ZC200-260

180°

120°

Issue 1

Figure 10 – On-state current vs. Heatsink temperature - Double Side Cooled (Sine wave)

150

125

100

Maximum permissable heatsink temperature (°C)

0 1000 2000 3000 4000

Mean forward current (A) (Whole cycle averaged)

30° 60° 90° 120° 180°

N3012ZC200-260

Issue 1

Figure 11 – On-state current vs. Power dissipation – Double Side Cooled (Square wave)

10000

9000

8000

7000

d.c.

6000

5000

4000

Maximum forward dissipation (W)

3000

2000

1000

0 1000 2000 3000 4000 5000 6000

Mean Forward Current (Amps) (Whole Cycle Averaged)

270° 180° 120° 90° 60° 30°

N3012ZC200-260

Issue 1

Figure 12 – On-state current vs. Heatsink temperature – Double Side Cooled (Square wave)

150

125

100

Maximum permissible heatsink temperature (°C)

0 1000 2000 3000 4000 5000 6000

Mean Forward Current (Amps) (Whole Cycle Averaged)

N3012ZC200-260

Issue 1

30° 60° 90° 120° 180° 270° d.c.

Data Sheet. Types N3012ZC200 to N3012ZC260 Issue 1 Page 8 of 11 August, 2002

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Figure 13 – On-state current vs. Power dissipation – Single Side Cooled (Sine wave)

4500

180°

120°

90°

60°

4000

3500

3000

2500

2000

1500

Maximum forward dissipation (W)

1000

500

0 500 1000 1500 2000 2500

Mean forward current (A) (Whole cycle averaged)

30°

N3012ZC200-260

Issue 1

Figure 14 – On-state current vs. Heatsink temperature – Single Side Cooled (Sine wave)

150

125

100

Maximum permissable heatsink temperature (°C)

0 500 1000 1500 2000 2500

Mean forward current (A) (Whole cycle averaged)

30° 60° 90° 120°

N3012ZC200-260

Issue 1

180°

Figure 15 – On-state current vs. Power dissipation – Single Side Cooled (Square wave)

4500

4000

3500

3000

d.c.

2500

2000

1500

Maximum forward dissipation (W)

1000

500

0 500 1000 1500 2000 2500 3000 3500

Mean Forward Current (Amps) (Whole Cycle Averaged)

270° 180° 120° 90° 60° 30°

N3012ZC200-260

Issue 1

Figure 16 – On-state current vs. Heatsink temperature – Single Side Cooled (Square wave)

150

125

100

Maximum permissible heatsink temperature (°C)

0 500 1000 1500 2000 2500 3000 3500

Mean Forward Current (Amps) (Whole Cycle Averaged)

N3012ZC200-260

Issue 1

30° 60° 90° 120° 180° 270° d.c.

Data Sheet. Types N3012ZC200 to N3012ZC260 Issue 1 Page 9 of 11 August, 2002

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Figure 17 - Maximum surge and I2t Ratings

1000000

100000

Total peak half sine surge current (A

10000

N3012ZC200-260

Issue 1

I2t: V

RRM

≤

10V

Tj (initial) = 125°C

I2t: 60% V

: V

TSM

: 60% V

TSM

RRM

135101 5 10 50 100 Duration of surge (ms) Duration of surge (c ycles @ 50Hz)

RRM

≤

10V

1.00E+08

1.00E+07

1.00E+06

s) t (A

Maximum I

Data Sheet. Types N3012ZC200 to N3012ZC260 Issue 1 Page 10 of 11 August, 2002

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Outline Drawing & Ordering Information

101A281

ORDERING INFORMATION (Please quote 10 digit code as bel ow)



N3012 ZC

Fixed

Type Code

Order code: N3012ZC260 – 2600V V

IXYS Semiconductor GmbH

Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: marcom@ixys.de

IXYS Corporation

3540 Bassett Street Santa Clara CA 95054 USA Tel: +1 (408) 982 0700 Fax: +1 (408) 496 0670 E-mail: sales@ixys.net

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report.

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An IXYS Company

outline code

, V

DRM

Fixed

, 37.7mm clamp height capsule.

RRM

www.westcode.com

www.ixys.net



Voltage code

/100

DRM

20-26

Fixed turn-off

time code

Westcode Semiconductors Ltd

PO Box 57 Chippenham

Wiltshi re S N15 1J L

Tel: +44 (0)1249 444524

Fax: +44 (0)1249 659448

E-mail: WSL.sales@westcode,com

Westcode Semiconductors Inc

3270 Cherry Avenue

Long Beach CA 90807 USA

Tel: +1 (562) 595 6971

Fax: +1 (562) 595 8182

E-mail: WSI.sales@westcode.com

Data Sheet. Types N3012ZC200 to N3012ZC260 Issue 1 Page 11 of 11 August, 2002

Datasheet N3012ZC200, N3012ZC260 Datasheet (Westcode Semiconductors)

Specifications and Main Features

Frequently Asked Questions

User Manual

Absolute Maximum Ratings

Characteristics

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.

5.0 Snubber Components When selecting snubber components, care m ust be taken not to use ex cessively large values of snubber

6.0 Rate of rise of on-state current The maxim um un-primed rate of r ise of on- s tate c urr ent must not exceed 300A/µs at any time during turn-

7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V

8.0 Computer Modelling Parameters

8.1 Device Dissipation Calculations

8.2 Calculating VT using ABCD Coefficients

8.3 D.C. Thermal Impedance Calculation

9.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1

Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves

Figure 6 - Recovered charge, Qra (50% chord)

Figure 8 - Maximum recovery time, trr (50% chord)

Figure 9 – On-state current vs. Power dissipation – Double Side Cooled (Sine wave)

Figure 10 – On-state current vs. Heatsink temperature - Double Side Cooled (Sine wave)

Figure 11 – On-state current vs. Power dissipation – Double Side Cooled (Square wave)

Figure 12 – On-state current vs. Heatsink temperature – Double Side Cooled (Square wave)

Figure 13 – On-state current vs. Power dissipation – Single Side Cooled (Sine wave)

Figure 14 – On-state current vs. Heatsink temperature – Single Side Cooled (Sine wave)

Figure 15 – On-state current vs. Power dissipation – Single Side Cooled (Square wave)

Figure 16 – On-state current vs. Heatsink temperature – Single Side Cooled (Square wave)

Figure 17 - Maximum surge and I2t Ratings

Outline Drawing & Ordering Information