Westcode Semiconductors N3012ZC200, N3012ZC260 Data Sheet
Date:- 15 Aug, 2002
WESTCODE
An IXYS Company
Phase Control Thyristor
Types N3012ZC200 to N3012ZC260
Old Type No.: N900CH20-26
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
(di/dt)
V
RGM
P
G(AV)
P
GM
T
j op
T
stg
Repetitive peak off-state voltage, (note 1) 2000-2600 V
Non-repetitive peak off-state voltage, (note 1) 2000-2600 V
Repetitive peak reverse voltage, (note 1) 2000-2600 V
Non-repetitive peak reverse voltage, (note 1) 2100-2700 V
OTHER RATINGS
Maximum average on-state current, T
Maximum average on-state current. T
Maximum average on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
=25°C, (note 4) 4056 A
sink
Peak non-repetitive surge tp=10ms, Vrm=0.6V
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)
2
t capacity for fusing tp=10ms, Vrm=0.6V
2
I
t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6) 150 A/µs
cr
Critical rate of rise of on-state current (non-repetitive), (Note 6) 300 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 5 W
Peak forward gate power 30 W
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
sink
sink
sink
=25°C, (note 2) 5922 A
sink
Data Sheet Issue:- 1
MAXIMUM
LIMITS
MAXIMUM
LIMITS
=55°C, (note 2) 3012 A
=85°C, (note 2) 2084 A
=85°C, (note 3) 1275 A
, (note 5) 45.1 kA
RRM
49.7 kA
, (note 5) 10.2×10
RRM
12.4×10
6
6
UNITS
UNITS
A2s
A2s
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
=67% V
D
Data Sheet. Types N3012ZC200 to N3012ZC260 Issue 1 Page 1 of 11 August, 2002
, IFG=2A, tr≤0.5µs, T
DRM
initial.
j
case
=125°C.
below 25°C.
j
WESTCODE
WESTCODE An IXYS Company Phase Control Thyristor Types N3012ZC200 to N3012ZC260
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Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
V
TM
V
T0
r
T
(dv/dt)crCritical rate of rise of off-state voltage 1000 - - VD=80% V
I
DRM
I
RRM
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
t
q
R
thJK
Maximum peak on-state voltage - - 1.4 ITM=3000A V
Threshold voltage - - 0.92 V
Slope resistance - - 0.16
, linear ramp, gate o/c
DRM
Peak off-state current - - 200 Rated V
Peak reverse current - - 200 Rated V
Gate trigger voltage - - 3.0 V
T
Gate trigger current - - 300
Gate non-trigger voltage - - 0.25 Rated V
DRM
RRM
=25°C VD=10V, IT=3A
j
DRM
mΩ
V/µs
mA
mA
mA
V
Holding current - - 1000 Tj=25°C mA
Gate-controlled turn-on delay time 1.0 2.0 µs
Turn-on time - 2.0 3.0
=67% V
V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
, IT=2000A, di/dt=10A/µs,
DRM
µs
Recovered charge - 5300 - µC
Recovered charge, 50% Chord - 3050 3600 µC
Reverse recovery current - 175 - A
Reverse recovery time - 35 -
- 300 -
Turn-off time
- 600 -
Thermal resistance, junction to heatsink
- - 0.011 Double side cooled K/W
I
=2000A, tp=1000µs, di/dt=10A/µs,
TM
V
=50V
r
ITM=2000A, tp=1000µs, di/dt=10A/µs,
V
=50V, Vdr=80%V
r
, dVdr/dt=20V/µs
DRM
ITM=2000A, tp=1000µs, di/dt=10A/µs,
V
=50V, Vdr=80%V
r
, dVdr/dt=200V/µs
DRM
µs
µs
- - 0.022 Single side cooled K/W
F Mounting force 27 - 47 kN
W
Weight - 1.7 - kg
t
Notes:-
1) Unless otherwise indicated T
Data Sheet. Types N3012ZC200 to N3012ZC260 Issue 1 Page 2 of 11 August, 2002
=125°C.
j
WESTCODE
WESTCODE An IXYS Company Phase Control Thyristor Types N3012ZC200 to N3012ZC260
WESTCODEWESTCODE
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
20 2000 2100 1250
22 2200 2300 1350
24 2400 2500 1450
26 2600 2700 1550
2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.
5.0 Snubber Components When selecting snubber components, care m ust be taken not to use ex cessively large values of snubber
capacitor or excessively sm all values of snubber re sistor. Such exc essive com ponent values may lead to
device damage due to the large resultant values of snubber disc harge current. If r equired, please consult
the factory for assistance.
6.0 Rate of rise of on-state current The maxim um un-primed rate of r ise of on- s tate c urr ent must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its dur ation
) should be 20µs or sufficient to allow the anode current to reach ten tim es IL, whichever is greater.
(t
p1
Otherwise, an increase in pulse current c ould be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
should remain flowing for the same duration as the anode current and have a
G
GT
.
8.0 Computer Modelling Parameters
Data Sheet. Types N3012ZC200 to N3012ZC260 Issue 1 Page 3 of 11 August, 2002
WESTCODE
WESTCODE An IXYS Company Phase Control Thyristor Types N3012ZC200 to N3012ZC260
WESTCODEWESTCODE
8.1 Device Dissipation Calculations
T
2
4
I
=
AV
Where VT0=0.92V, rT=0.16mΩ,
R
= Supplementary thermal impedance, see table below and
th
00
rff
2
⋅⋅
T
WrffVV
⋅⋅⋅++−
AVTTT
and:
W
AV
=
∆
R
th
max
TTT
−=∆
Hsj
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 3.464 2.449 2 1.732 1.414 1.149 1
Sine wave 3.98 2.778 2.22 1.879 1.57
0.0124 0.0122 0.0121 0.0119 0.0117 0.0113 0.011
0.0249 0.0248 0.0247 0.0246 0.0244 0.0241 0.022
0.0168 0.0140 0.0131 0.0118 0.0112
0.0249 0.0247 0.0246 0.0244 0.0241
Form Factors
8.2 Calculating VT using ABCD Coefficients
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
The constants, derived by curve fitting soft ware, are given below for both hot and c old c harac teris tic s. T he
resulting values for V
that plotted.
given below:
T
T
A 0.498019438 A 1.049896747
B 0.04122506 B -0.0399690371
C 9.4563×10
D 5.27375904×10
vs. VT, on page 6 is represented in two ways;
T
and rs tangent used for rating purposes and
0
()
agree with the true device characteristic over a current range, which is limited to
25°C Coefficients 125°C Coefficients
-5
-3
C 5.2302×10
D 9.96560697×10
IDICIBAV ⋅+⋅+⋅+= ln
TTTT
-5
-3
T
in
Data Sheet. Types N3012ZC200 to N3012ZC260 Issue 1 Page 4 of 11 August, 2002
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