Westcode Semiconductors N2086NC060, N2086NC100 Data Sheet
Date:- 02 August 2012
Data Sheet Issue:- 3
Phase Control Thyristor
Types N2086NC060 to N2086NC100
Absolute Maximum Ratings
V
DRM
V
DSM
V
RRM
V
RSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) 600-1000 V
Non-repetitive peak off-state voltage, (note 1) 600-1000 V
Repetitive peak reverse voltage, (note 1) 600-1000 V
Non-repetitive peak reverse voltage, (note 1) 700-1100 V
OTHER RATINGS
I
Maximum average on-state current. T
T(AV)M
I
Maximum average on-state current. T
T(AV)M
I
Maximum average on-state current. T
T(AV)M
I
Nominal RMS on-state current. T
T(RMS)
I
D.C. on-state current. T
T(d.c.)
I
Peak non-repetitive surge tp=10ms, Vrm=60%V
TSM
I
TSM2
Peak non-repetitive surge t
=25°C, (note 4) 3439 A
sink
=10ms, Vrm≤10V, (note 5)
p
I2t I2t capacity for fusing tp=10ms, Vrm=60%V
I2t
2
I
t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
Maximum rate of rise of on-state current (continuous, 50Hz), (Note 6) 250
(di/dt)cr
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1000
V
Peak reverse gate voltage 5 V
RGM
P
Mean forward gate power 4 W
G(AV)
PGM Peak forward gate power 30 W
T
Operating temperature range -40 to +125 °C
j op
T
Storage temperature range -40 to +150 °C
stg
=55°C, (note 2) 2086 A
sink
=85°C, (note 2) 1378 A
sink
=85°C, (note 3) 792 A
sink
=25°C, (note 2) 4207 A
sink
, (note 5) 35.0 kA
RRM
, (note 5) 6.13×106 A
RRM
MAXIMUM
LIMITS
MAXIMUM
LIMITS
UNITS
UNITS
38.0 kA
6
7.22×10
A
A/µs Maximum rate of rise of on-state current (repetitive, 50Hz, 60s), (Note 6) 500
2
s
2
s
Notes: -
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
=67% V
D
7) Rated V
Data Sheet. Types N2086NC060 to N2086NC100 Issue 3. Page 1 of 11 August 2012
, ITM=1000A, IFG=2A, tr≤0.5µs, T
DRM
.
DRM
initial.
j
below 25°C.
j
=125°C.
case
Phase Control Thyristor Types N2086NC060 to N2086NC100
r
r
r
r
r
r
Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
VTM Maximum peak on-state voltage - - 1.12 ITM=2550A
V
- - 1.49 ITM=6250A
VT0 Threshold voltage - - 0.84 V
rT Slope resistance - - 0.108
(dv/dt)cr Critical rate of rise of off-state voltage 1000 - - VD=80%V
I
Peak off-state current - - 100 Rated V
DRM
I
Peak reverse current - - 100 Rated V
RRM
VGT Gate trigger voltage - - 3.0
IGT Gate trigger current - - 300 mA
=25°C, VD=10V, IT=3A
T
j
VGD Gate non-trigger voltage - - 0.25 Rated V
, linear ramp, Gate o/c
DRM
mA
DRM
mA
RRM
V
DRM
mΩ
V/µs
V
IH Holding current - - 1000 Tj=25°C mA
tgd Gate controlled turn-on delay time - 0.8 1.5
tgt Turn-on time - 1.5 3.0
Qrr Recovered Charge - 1600 Qra Recovered Charge, 50% chord - 1100 1400 µC
Irm Reverse recovery current - 120 - A
V
=67%V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
I
=1000A, tp=1000µs, di/dt=10A/µs,
TM
V
=50V
r
, ITM=2000A, di/dt=10A/µs,
DRM
µs
µC
trr Reverse recovery time, 50% chord - 18 - µs
=1000A, tp=1000µs, di/dt=10A/µs,
I
tq Turn-off time - 200 -
- 300 R
thJK
Thermal resistance, junction to heatsink - - 0.024 Double side cooled K/W
TM
V
=50V, V
=1000A, tp=1000µs, di/dt=10A/µs,
I
TM
V
=50V, V
=80%V
d
=80%V
d
DRM
DRM
, dV
/dt=20V/µs
d
, dV
/dt=200V/µs
d
µs
- - 0.048 Single side cooled K/W
F Mounting force 19 - 26 kN
Wt Weight - 510 - g
Notes: -
1) Unless otherwise indicated T
2)
For other clamp forces, please consult factory.
Data Sheet. Types N2086NC060 to N2086NC100 Issue 3. Page 2 of 11 August 2012
=125°C.
j
Phase Control Thyristor Types N2086NC060 to N2086NC100
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
VD VR
DC V
06 600 700 420
07 700 800 490
08 800 900 560
09 900 1000 630
10 1000 1100 700
2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
below 25°C.
j
4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.
5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of I
(t
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
p1
should be between five and ten times IGT, which is shown on page 2. Its duration
GM
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
should remain flowing for the same duration as the anode current and have a
G
.
GT
Data Sheet. Types N2086NC060 to N2086NC100 Issue 3. Page 3 of 11 August 2012
Phase Control Thyristor Types N2086NC060 to N2086NC100
∆
(
8.0 Computer Modelling Parameters
8.1 Device Dissipation Calculations
2
4
I
=
AV
Where V
R
th
=0.84V, rT=0.108mΩ,
T0
= Supplementary thermal impedance, see table below and
00
2
2
2
rff
⋅⋅
T
WrffVV
⋅⋅⋅++−
AVTTT
and:
W
AV
=
R
T
th
max
TTT
−=∆
Kj
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave Double Side Cooled 0.0293 0.0285 0.0278 0.0271 0.0261 0.0249 0.024
Square wave Single Side Cooled 0.0534 0.053 0.0524 0.0518 0.0509 0.0497 0.048
Sine wave Double Side Cooled 0.0286 0.0276 0.0269 0.0263 0.0248
Sine wave Single Side Cooled 0.0523 0.0517 0.0511 0.0497 0.0489
Form Factors
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 3.464 2.449 2 1.732 1.414 1.149 1
Sine wave 3.98 2.778 2.22 1.879 1.57
8.2 Calculating V
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
using ABCD Coefficients
T
vs. VT, on page 6 is represented in two ways;
T
and rT tangent used for rating purposes and
T0
given below:
T
in
T
)
The constants, derived by curve fitting software, are given below for both hot and cold characteristics.
The resulting values for V
to that plotted.
Data Sheet. Types N2086NC060 to N2086NC100 Issue 3. Page 4 of 11 August 2012
agree with the true device characteristic over a current range, which is limited
T
25°C Coefficients 125°C Coefficients
A
B
C
D
0.746441
0.01352761
4.783013×10
4.302293×10
A
B
-5
-3
C
D
0.6821136
-6.744674×10
4.313690×10-5
7.540795×10-3
IDICIBAV ⋅+⋅+⋅+= ln
TTTT
-3
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