Westcode Semiconductors N1718NC120, N1718NC200 Data Sheet

Phase Control Thyristor

Types N1718NC120 to N1718NC200

Absolute Maximum Ratings

Date:- 2nd April, 2014

Data Sheet Issue:- 4

V

DRM

V

DSM

V

RRM

V

RSM

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1) 1200-2000 V Non-repetitive peak off-state voltage, (note 1) 1200-2000 V Repetitive peak reverse voltage, (note 1) 1200-2000 V Non-repetitive peak reverse voltage, (note 1) 1300-2100 V

OTHER RATINGS

I

T(AV)M

I

T(AV)M

I

T(AV)M

I

T(RMS)M

I

T(d.c.)

I

TSM

I

TSM2

I2t I2t capacity for fusing tp=10ms, Vrm=0.6V I2t

(di/dt)

V

RGM

P

G(AV)

P

GM

T

j op

T

stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

Maximum average on-state current, T Maximum average on-state current. T Maximum average on-state current. T Nominal RMS on-state current, T D.C. on-state current, T

=25°C, (note 4)

sink

Peak non-repetitive surge tp=10ms, Vrm=0.6V

=55°C, (note 2)

sink

=85°C, (note 2)

sink

=85°C, (note 3)

sink

=25°C, (note 2)

sink

, (note 5) 27.2 kA

RRM

Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)

, (note 5) 3.70×10

RRM

2

I

t capacity for fusing tp=10ms, Vrm≤10V, (note 5)

Critical rate of rise of on-state current (repetitive), (Note 6) 500 A/µs

cr

Critical rate of rise of on-state current (non-repetitive), (Note 6) 1000 A/µs Peak reverse gate voltage 5 V Mean forward gate power 4 W Peak forward gate power 30 W Operating temperature range -40 to +125 °C Storage temperature range -40 to +150 °C

below 25°C.

j

initial.

=67% V

D

, IFG=2A, tr≤0.5µs, T

DRM

j

=125°C.

case

MAXIMUM

LIMITS

MAXIMUM

LIMITS

UNITS

1718 A 1143 A

663 A 3450 A 2852 A

29.9 kA

4.47×10

6

A2s A2s

Data Sheet. Types N1718NC120 to N1718NC200 Issue 4 Page 1 of 11 April, 2014

Phase Control Thyristor Types N1718NC120 to N1718NC200

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V

TM

V

T0

r

T

Maximum peak on-state voltage

Threshold voltage - - 0.979 V

Slope resistance - - 0.169 (dv/dt)crCritical rate of rise of off-state voltage 1000 - - VD=80% V I I V I V I t t Q Q I t

t

R

DRM

RRM

GT

GD

H

gd

gt

rr

ra

rr

q

thJK

Peak off-state current - - 100 Rated V

Peak reverse current - - 100 Rated V

Gate trigger voltage - - 3.0 V

Gate trigger current - - 300

Gate non-trigger voltage

Holding current - - 1000 Tj=25°C mA

Gate-controlled turn-on delay time - 0.6 1.5 µs

Turn-on time - 1.1 2.5

Recovered charge - 2300 2550 µC

Recovered charge, 50% Chord - 1500 - µC

Reverse recovery current - 123 - A

Reverse recovery time - 24 -

Turn-off time

Thermal resistance, junction to heatsink

- - 1.41 ITM=2550A

- - 1.85 I

=5150A

TM

V

mΩ

=25°C VD=10V, IT=3A

T

j

- - 0.25 Rated V

=67% V

V

D

I

=2A, tr=0.5µs, Tj=25°C

FG

=1000A, tp=1000µs, di/dt=10A/µs,

I

TM

V

=50V

r

, linear ramp, gate o/c

DRM

RRM

DRM

, IT=1500A, di/dt=10A/µs,

DRM

V/µs

mA mA

mA

V

µs

=1000A, tp=1000µs, di/dt=10A/µs,

I

- 100 -

- 170 -

TM

V

=50V, Vdr=80%V

r

=1000A, tp=1000µs, di/dt=10A/µs,

I

TM

V

=50V, Vdr=80%V

r

, dVdr/dt=20V/µs

DRM

, dVdr/dt=200V/µs

DRM

µs

- - 0.024 Double side cooled K/W

- - 0.048 Single side cooled K/W F Mounting force 19 - 26 kN W

t

Weight - 510 - g

Notes:-

1) Unless otherwise indicated T

2)

For other clamp forces please consult factory.

=125°C.

j

Data Sheet. Types N1718NC120 to N1718NC200 Issue 4 Page 2 of 11 April, 2014

Phase Control Thyristor Types N1718NC120 to N1718NC200

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM VRRM

V

RSM

V

D

DC V

R

12 1200 1300 810 14 1400 1500 930 16 1600 1700 1040 18 1800 1900 1150 20 2000 2100 1270

2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

below 25°C.

j

4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.

5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance.

6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network.

7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least

30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I

GM

4A/µs

I

G

t

p1

The magnitude of I

) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.

(t

p1

should be between five and ten times IGT, which is shown on page 2. Its duration

GM

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’ current I magnitude in the order of 1.5 times I

should remain flowing for the same duration as the anode current and have a

G

.

GT

Data Sheet. Types N1718NC120 to N1718NC200 Issue 4 Page 3 of 11 April, 2014

Phase Control Thyristor Types N1718NC120 to N1718NC200

∆

(

8.0 Computer Modelling Parameters

8.1 Device Dissipation Calculations

2

4

I

=

AV

Where V

R

th

=0.979V, rT=0.169mΩ,

T0

= Supplementary thermal impedance, see table below and

00

2

rff

⋅⋅

T

WrffVV

⋅⋅⋅++−

AVTTT

and:

W

AV

=

R

T

th

max

−=∆

TTT

Kj

ff = Form factor, see table below.

Supplementary Thermal Impedance

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave Double Side Cooled 0.0293 0.0285 0.0278 0.0271 0.0261 0.0249 0.024

Square wave Single Side Cooled 0.0534 0.053 0.0524 0.0518 0.0509 0.0497 0.048

Sine wave Double Side Cooled 0.0286 0.0276 0.0269 0.0263 0.0248

Sine wave Single Side Cooled 0.0531 0.0523 0.0517 0.0511 0.0497

Form Factors

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave 3.464 2.449 2 1.732 1.414 1.149 1

Sine wave 3.98 2.778 2.22 1.879 1.57

8.2 Calculating V

The on-state characteristic I (i) the well established V (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V

terms of I

using ABCD Coefficients

T

vs. VT, on page 6 is represented in two ways;

T

and rT tangent used for rating purposes and

T0

given below:

T

in

T

)

The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for V to that plotted.

Data Sheet. Types N1718NC120 to N1718NC200 Issue 4 Page 4 of 11 April, 2014

agree with the true device characteristic over a current range, which is limited

T

25°C Coefficients 125°C Coefficients

A 0.7637538 A 0.5497078 B 0.03561525 B 0.067655 C 1.11447 ×10 D 1.837515 ×10

-4

-3

C 1.6257 ×10 D -1.682 ×10

IDICIBAV ⋅+⋅+⋅+= ln

TTTT

-4

-3

Westcode Semiconductors N1718NC120, N1718NC200 Data Sheet

Specifications and Main Features

Frequently Asked Questions

User Manual

Absolute Maximum Ratings

Characteristics

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.

5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber

6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during

7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least

8.0 Computer Modelling Parameters

8.1 Device Dissipation Calculations