Westcode Semiconductors N1467NC200, N1467NC260 Data Sheet
Phase Control Thyristor
Types N1467NC200 to N1467NC260
Absolute Maximum Ratings
Date:- 31st July 2012
Data Sheet Issue:- 3
V
DRM
V
DSM
V
RRM
V
RSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) 2000-2600 V
Non-repetitive peak off-state voltage, (note 1) 2000-2600 V
Repetitive peak reverse voltage, (note 1) 2000-2600 V
Non-repetitive peak reverse voltage, (note 1) 2100-2700 V
OTHER RATINGS
I
Maximum average on-state current, T
T(AV)M
I
Maximum average on-state current. T
T(AV)M
I
Maximum average on-state current. T
T(AV)M
I
Nominal RMS on-state current, T
T(RMS)M
I
D.C. on-state current, T
T(d.c.)
I
Peak non-repetitive surge tp=10ms, Vrm=0.6V
TSM
I
TSM2
Peak non-repetitive surge t
=25°C, (note 4)
sink
=10ms, Vrm≤10V, (note 5)
p
I2t I2t capacity for fusing tp=10ms, Vrm=0.6V
I2t
2
I
t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
sink
sink
sink
=25°C, (note 2)
sink
=55°C, (note 2)
=85°C, (note 2)
=85°C, (note 3)
, (note 5) 21.5 A
RRM
, (note 5) 2.31×106 A
RRM
MAXIMUM
LIMITS
MAXIMUM
LIMITS
UNITS
UNITS
1467 A
997 A
595 A
2912 A
2486 A
23.6 A
6
2.78×10
A
(continuous, 50Hz) 250
(di/dt)cr Critical rate of rise of on-state current (note 6)
A/µs (repetitive, 50Hz, 60s) 500
(non-repetitive) 1000
V
Peak reverse gate voltage 5 V
RGM
P
Mean forward gate power 4 W
G(AV)
PGM Peak forward gate power 30 W
T
Operating temperature range -40 to +125 °C
j op
T
Storage temperature range -40 to +150 °C
stg
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
=67% V
D
, ITM=1500A, IFG=2A, tr≤0.5µs, T
DRM
initial.
j
below 25°C.
j
=125°C.
case
2
s
2
s
Data Sheet. Types N1467NC200 to N1467NC260 Issue 3 Page 1 of 10 July 2012
Phase Control Thyristor Types N1467NC200 to N1467NC260
Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
VTM Maximum peak on-state voltage - - 1.69 ITM=2550A V
VT0 Threshold voltage - - 1.0
rT Slope resistance - - 0.272
(dv/dt)cr Critical rate of rise of off-state voltage 1000 - - VD=80% V
I
Peak off-state current - - 100 Rated V
DRM
I
Peak reverse current - - 100 Rated V
RRM
VGT Gate trigger voltage - - 3.0
IGT Gate trigger current - - 300 mA
=25°C. VD=10V, IT=2A
T
j
VGD Gate non-trigger voltage - - 0.25 Rated V
, linear ramp, gate o/c
DRM
mA
DRM
mA
RRM
V
DRM
IH Holding current - - 1000 Tj=25°C mA
R
thJK
Thermal resistance, junction to heatsink
- - 0.024 Double side cooled K/W
- - 0.048 Single side cooled K/W
F Mounting force 19 - 26 kN
V
mΩ
V/µs
V
Wt Weight - 0.51 - kg
Notes:-
1) Unless otherwise indicated T
=125°C.
j
Data Sheet. Types N1467NC200 to N1467NC260 Issue 3 Page 2 of 10 July 2012
Phase Control Thyristor Types N1467NC200 to N1467NC260
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
VD VR
DC V
20 2000 2100 1250
22 2200 2300 1350
24 2400 2500 1450
26 2600 2700 1550
2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
below 25°C.
j
4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.
5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of I
(t
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
p1
should be between five and ten times IGT, which is shown on page 2. Its duration
GM
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
should remain flowing for the same duration as the anode current and have a
G
.
GT
Data Sheet. Types N1467NC200 to N1467NC260 Issue 3 Page 3 of 10 July 2012
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