Datasheet N1467NC200, N1467NC260 Datasheet (Westcode Semiconductors)

Phase Control Thyristor

Absolute Maximum Ratings

Date:- 31st July 2012
Data Sheet Issue:- 3
V
DRM
V
DSM
V
RRM
V
RSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) 2000-2600 V Non-repetitive peak off-state voltage, (note 1) 2000-2600 V Repetitive peak reverse voltage, (note 1) 2000-2600 V Non-repetitive peak reverse voltage, (note 1) 2100-2700 V
OTHER RATINGS
I
Maximum average on-state current, T
T(AV)M
I
Maximum average on-state current. T
T(AV)M
I
Maximum average on-state current. T
T(AV)M
I
Nominal RMS on-state current, T
T(RMS)M
I
D.C. on-state current, T
T(d.c.)
I
Peak non-repetitive surge tp=10ms, Vrm=0.6V
TSM
I
TSM2
Peak non-repetitive surge t
=25°C, (note 4)
sink
=10ms, Vrm≤10V, (note 5)
p
I2t I2t capacity for fusing tp=10ms, Vrm=0.6V I2t
2
I
t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
sink
sink
sink
=25°C, (note 2)
sink
=55°C, (note 2) =85°C, (note 2) =85°C, (note 3)
, (note 5) 21.5 A
RRM
, (note 5) 2.31×106 A
RRM
MAXIMUM
LIMITS
MAXIMUM
LIMITS
UNITS
UNITS
1467 A
997 A
595 A 2912 A 2486 A
23.6 A
6
2.78×10
A
(continuous, 50Hz) 250
(di/dt)cr Critical rate of rise of on-state current (note 6)
A/µs (repetitive, 50Hz, 60s) 500
(non-repetitive) 1000
V
Peak reverse gate voltage 5 V
RGM
P
Mean forward gate power 4 W
G(AV)
PGM Peak forward gate power 30 W T
Operating temperature range -40 to +125 °C
j op
T
Storage temperature range -40 to +150 °C
stg
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
=67% V
D
, ITM=1500A, IFG=2A, tr≤0.5µs, T
DRM
initial.
j
below 25°C.
j
=125°C.
case
2
s
2
s
Data Sheet. Types N1467NC200 to N1467NC260 Issue 3 Page 1 of 10 July 2012
Phase Control Thyristor Types N1467NC200 to N1467NC260

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
VTM Maximum peak on-state voltage - - 1.69 ITM=2550A V VT0 Threshold voltage - - 1.0 rT Slope resistance - - 0.272 (dv/dt)cr Critical rate of rise of off-state voltage 1000 - - VD=80% V I
Peak off-state current - - 100 Rated V
DRM
I
Peak reverse current - - 100 Rated V
RRM
VGT Gate trigger voltage - - 3.0 IGT Gate trigger current - - 300 mA
=25°C. VD=10V, IT=2A
T
j
VGD Gate non-trigger voltage - - 0.25 Rated V
, linear ramp, gate o/c
DRM
mA
DRM
mA
RRM
V
DRM
IH Holding current - - 1000 Tj=25°C mA
R
thJK
Thermal resistance, junction to heatsink
- - 0.024 Double side cooled K/W
- - 0.048 Single side cooled K/W
F Mounting force 19 - 26 kN
V
m
V/µs
V
Wt Weight - 0.51 - kg
Notes:-
1) Unless otherwise indicated T
=125°C.
j
Data Sheet. Types N1467NC200 to N1467NC260 Issue 3 Page 2 of 10 July 2012
Phase Control Thyristor Types N1467NC200 to N1467NC260

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
VD VR
DC V 20 2000 2100 1250 22 2200 2300 1350 24 2400 2500 1450 26 2600 2700 1550

2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

below 25°C.
j

4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.

5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance.

6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network.

7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least

30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of I (t
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
p1
should be between five and ten times IGT, which is shown on page 2. Its duration
GM
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’ current I magnitude in the order of 1.5 times I
should remain flowing for the same duration as the anode current and have a
G
.
GT
Data Sheet. Types N1467NC200 to N1467NC260 Issue 3 Page 3 of 10 July 2012
Phase Control Thyristor Types N1467NC200 to N1467NC260
(

8.0 Computer Modelling Parameters

8.1 Device Dissipation Calculations

2
4
I
=
AV
Where V
R
th
=1.0V,rT=0.272mΩ,
T0
= Supplementary thermal impedance, see table below and
00
2
2
2
rff
T
WrffVV
++
AVTTT
and:
W
AV
=
R
T
th
max
TTT
=
Kj
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave Double Side Cooled 0.0293 0.0285 0.0278 0.0271 0.0261 0.0249 0.024 Square wave Single Side Cooled 0.0534 0.053 0.0524 0.0518 0.0509 0.0497 0.048
Sine wave Double Side Cooled 0.0286 0.0276 0.0269 0.0263 0.0248 Sine wave Single Side Cooled 0.0531 0.0523 0.0517 0.0511 0.0497
Form Factors
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 3.46 2.45 2 1.73 1.41 1.15 1
Sine wave 3.98 2.78 2.22 1.88 1.57
8.2 Calculating V
The on-state characteristic I (i) the well established V (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
using ABCD Coefficients
T
vs. VT, on page 6 is represented in two ways;
T
and rT tangent used for rating purposes and
T0
given below:
T
in
T
)
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for V to that plotted.
agree with the true device characteristic over a current range, which is limited
T
25°C Coefficients 125°C Coefficients
A 0.7129291 A 0.3809341 B 0.06494638 B 0.135334 C 2.185213×10-4 C 3.377227×10-4 D -0.001796941 D -0.01204351
IDICIBAV +++= ln
TTTT
Data Sheet. Types N1467NC200 to N1467NC260 Issue 3 Page 4 of 10 July 2012
Phase Control Thyristor Types N1467NC200 to N1467NC260
p
p

8.3 D.C. Thermal Impedance Calculation

=
np
⎛ ⎜
1
=
p
Where p = 1 to n, n is the number of terms in the series and:
t = Duration of heating pulse in seconds. r
= Thermal resistance at time t.
t
r
= Amplitude of pth term.
= Time Constant of r
τ
The coefficients for this device are shown in the tables below:
Term 1 2 3 4 5
rp
τ
p
Term 1 2 3 4 5 6
rp
τ
p

9.0 Reverse recovery ratings (i) Q

0.01249139 6.316833×10-3 1.850855×10-3 1.922045×10-3 6.135330×10-4
0.8840810 0.1215195 0.03400152 6.742908×10-3 1.326292×10-3
0.02919832 4.863568×10-3 3.744798×10-3 6.818034×10-3 2.183558×10-3 1.848294×10
6.298105 3.286174 0.5359179 0.1186897 0.02404574 3.379476×10
is based on 50% Irm chord as shown in Fig. 1
ra
term.
th
D.C. Double Side Cooled
D.C. Single Side Cooled
1
pt
⎜ ⎝
t
τ
p
=
err
⎟ ⎠
-3
-3
Fig. 1
is based on a 150µs integration time i.e.
(ii) Q
rr
=
(iii)
FactorK =
Data Sheet. Types N1467NC200 to N1467NC260 Issue 3 Page 5 of 10 July 2012
t
1
t
2
150
s
µ
dtiQ
.
rrrr
0
Phase Control Thyristor Types N1467NC200 to N1467NC260

Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

Figure 3 - Gate characteristics - Trigger limits

Figure 4 - Gate characteristics - Power curves

Data Sheet. Types N1467NC200 to N1467NC260 Issue 3 Page 6 of 10 July 2012
Phase Control Thyristor Types N1467NC200 to N1467NC260
Figure 5 – On-state current vs. Power dissipation – Double Side Cooled (Sine wave)
Figure 6 – On-state current vs. Heatsink temperature - Double Side Cooled (Sine wave)
Figure 7 – On-state current vs. Power dissipation – Double Side Cooled (Square wave)
Figure 8 – On-state current vs. Heatsink temperature – Double Side Cooled (Square wave)
Data Sheet. Types N1467NC200 to N1467NC260 Issue 3 Page 7 of 10 July 2012
Phase Control Thyristor Types N1467NC200 to N1467NC260
Figure 9 – On-state current vs. Power dissipation – Single Side Cooled (Sine wave)
Figure 10 – On-state current vs. Heatsink temperature – Single Side Cooled (Sine wave)
Figure 11 – On-state current vs. Power dissipation – Single Side Cooled (Square wave)
Figure 12 – On-state current vs. Heatsink temperature – Single Side Cooled (Square wave)
Data Sheet. Types N1467NC200 to N1467NC260 Issue 3 Page 8 of 10 July 2012
Phase Control Thyristor Types N1467NC200 to N1467NC260
Figure 13 - Maximum surge and I
2
t Ratings
Data Sheet. Types N1467NC200 to N1467NC260 Issue 3 Page 9 of 10 July 2012

Outline Drawing & Ordering Information

Phase Control Thyristor Types N1467NC200 to N1467NC260
101A223
ORDERING INFORMATION (Please quote 10 digit code as below)
N1467 NC
Fixed
Type Code
Typical order code: N1467NC200 – 2000V V
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IXYS Corporation
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The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report.
Fixed
Outline Code
, V
DRM
, 26mm clamp height.
RRM
www.ixysuk.com
www.ixys.com
♦ ♦ 0
Voltage Code
20-26
Fixed turn-off
time code
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Tel: +44 (0)1249 444524
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Data Sheet. Types N1467NC200 to N1467NC260 Issue 3 Page 10 of 10 July 2012
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