Westcode Semiconductors N1314NC300, N1314NC360 Data Sheet
Date:- 1 Aug, 2008
WESTCODE
An IXYS Company
Phase Control Thyristor
Types N1314NC300 to N1314NC360
Old Type No.: N570CH24-36
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
diT/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Repetitive peak off-state voltage, (note 1) 3000-3600 V
Non-repetitive peak off-state voltage, (note 1) 3000-3600 V
Repetitive peak reverse voltage, (note 1) 3000-3600 V
Non-repetitive peak reverse voltage, (note 1) 3100-3700 V
OTHER RATINGS
Mean on-state current. T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current. T
D.C. on-state current. T
Peak non-repetitive surge tp=10ms, Vrm=0.6V
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)
2
t capacity for fusing tp=10ms, Vrm=0.6V
2
t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
I
Maximum rate of rise of on-state current (repetitive), (Note 6) 150 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 300 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 4 W
Peak forward gate power 30 W
Non-trigger gate voltage, (Note 7) 0.25 V
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
=55°C, (note 2) 1314 A
sink
=85°C, (note 2) 914 A
sink
=85°C, (note 3) 564 A
sink
=25°C, (note 2) 2576 A
sink
=25°C, (note 4) 2278 A
sink
Data Sheet Issue:- 2
MAXIMUM
MAXIMUM
, (note 5) 16.6 kA
RRM
, (note 5) 1.38×10
RRM
LIMITS
LIMITS
18.3 kA
6
1.67×10
6
UNITS
UNITS
A2s
A2s
Notes: -
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
=67% V
D
7) Rated V
Data Sheet. Types N1314NC300 to N1314NC360 Issue 2 Page 1 of 10 August, 2008
, ITM=3000A, IFG=2A, tr≤0.5µs, T
DRM
.
DRM
initial.
j
below 25°C.
j
=125°C.
case
WESTCODE An IXYS Company Phase Control Thyristor types N1314NC300 to N1314NC360
Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
V
V
r
S
dv/dt Critical rate of rise of off-state voltage 1000 - - VD=80% V
I
DRM
I
RRM
V
I
GT
I
H
t
gd
t
gt
Q
Q
I
rm
t
rr
t
q
R
Maximum peak on-state voltage - - 2.11 ITM=2550A V
TM
Threshold voltage - - 1.00 V
0
Slope resistance - - 0.437
, linear ramp, Gate O/C
DRM
Peak off-state current - - 100 Rated V
Peak reverse current - - 100 Rated V
Gate trigger voltage - - 3.0 V
GT
T
Gate trigger current - - 300
DRM
RRM
=25°C, VD=10V, IT=3A
j
Holding current - - 1000 Tj=25°C mA
Gate controlled turn-on delay time - 0.8 1.5
Turn-on time - 1.3 2.5
Recovered Charge - 4100 4900 µC
rr
Recovered Charge, 50% chord - 2400 - µC
ra
Reverse recovery current - 155 - A
=80%V
V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
I
=1000A, tp=1000µs, di/dt=10A/µs,
TM
V
=50V
r
, ITM=2000A, di/dt=10A/µs,
DRM
Reverse recovery time, 50% chord - 31 -
ITM=1000A, tp=1000µs, di/dt=10A/µs,
V
=50V, Vdr=80%V
r
, dVdr/dt=20V/µs
DRM
ITM=1000A, tp=1000µs, di/dt=10A/µs,
V
=50V, Vdr=80%V
r
, dVdr/dt=200V/µs
DRM
Turn-off time
Thermal resistance, junction to heatsink
th(j-hs)
- 600 -
- 900 -
--0.022 Double side cooled K/W
--
0.044 Single side cooled K/W
mΩ
V/µs
mA
mA
mA
µs
µs
µs
F Mounting force 19 - 26 kN
W
Weight - 510 - g
t
Notes: -
1) Unless otherwise indicated T
=125°C.
j
Data Sheet. Types N1314NC300 to N1314NC360 Issue 2 Page 2 of 10 August, 2008
WESTCODE An IXYS Company Phase Control Thyristor types N1314NC300 to N1314NC360
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
V
Voltage Grade
30 3000 3100 1750
32 3200 3300 1800
34 3400 3500 1850
36 3600 3700 1900
2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.
5.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network.
6.0 Gate Drive The recommended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
The pulse duration may need to be configured according to the application but should be no shorter than
20µs, otherwise an increase in pulse current may be needed to supply the necessary charge to trigger.
7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
T
2
4
I
=
AV
Where V0=1.0V, rs=0.437mΩ,
R
= Supplementary thermal impedance, see table below.
th
00
rff
2
⋅⋅
s
WrffVV
⋅⋅⋅++−
AVs
and:
W
AV
=
∆
R
th
max
TTT
−=∆
Hsj
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave Double Side Cooled 0.0298 0.0279 0.0265 0.0254 0.024 0.0227 0.022
Square wave Single Side Cooled 0.0518 0.0503 0.0491 0.0482 0.0468 0.0454 0.044
Sine wave Double Side Cooled 0.028 0.0258 0.0246 0.0238 0.0224
Sine wave Single Side Cooled 0.0505 0.0488 0.0477 0.0468 0.0449
Form Factors
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 3.46 2.45 2 1.73 1.41 1.15 1
Sine wave 3.98 2.78 2.22 1.88 1.57
Data Sheet. Types N1314NC300 to N1314NC360 Issue 2 Page 3 of 10 August, 2008
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