Westcode Semiconductors N1140LN140 Data Sheet

Date:- 17th December, 2014

Data Sheet Issue:- 4

Phase Control Thyristor

VOLTAGE RATINGS

MAXIMUM

LIMITS

UNITS

V

DRM

Repetitive peak off-state voltage, (note 1)

1400

V

V

DSM

Non-repetitive peak off-state voltage, (note 1)

1500

V

V

RRM

Repetitive peak reverse voltage, (note 1)

1400

V

V

RSM

Non-repetitive peak reverse voltage, (note 1)

1500

V

OTHER RATINGS

MAXIMUM

LIMITS

UNITS

I

T(AV)M

Maximum average on-state current, T

sink

=55°C, (note 2)

1315

A

I

T(AV)M

Maximum average on-state current. T

sink

=85°C, (note 2)

930

A

I

T(AV)M

Maximum average on-state current. T

sink

=85°C, (note 3)

565

A

I

T(RMS)M

Nominal RMS on-state current, T

sink

=25°C, (note 2)

2565

A

I

T(d.c.)

D.C. on-state current, T

sink

=25°C, (note 4)

2210

A

I

TSM

Peak non-repetitive surge tp=10ms, Vrm=60%V

RRM

, (note 5)

17500

A

I

TSM2

Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)

19500

A

I2t

I2t capacity for fusing tp=10ms, Vrm=60%V

RRM

, (note 5)

1.53×106

A2s

I2t

I2t capacity for fusing tp=10ms, Vrm10V, (note 5)

1.90×106

A2s

(di/dt)cr

Critical rate of rise of on-state current (note 6)
(continuous, 50Hz)

200

A/µs

(non-repetitive)

400

V

RGM

Peak reverse gate voltage

5

V

P

G(AV)

Mean forward gate power

3

W

PGM

Peak forward gate power

30

W

T

j op

Operating temperature range

-60 to +130

°C

T

stg

Storage temperature range

-60 to +130

°C

Absolute Maximum Ratings

Types N1140LN140

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 130°C T

6) V

=67% V

D

Data Sheet. Types N1140LN140 Issue 4 Page 1 of 11 December, 2014

, ITM=1800A, IFG=2A, tr0.5µs, T

DRM

initial.

j

below 25°C.

j

=130°C.

case

Phase Control Thyristor Types N1140LN140

PARAMETER

MIN.

TYP.

MAX.

TEST CONDITIONS (Note 1)

UNITS

VTM

Maximum peak on-state voltage

- - 1.10

ITM=1000A

V

VTM

Maximum peak on-state voltage

- - 1.87

ITM=3765A

V

VT0

Threshold voltage

- - 0.82 V

rT

Slope resistance

- - 0.28

m

(dv/dt)cr

Critical rate of rise of off-state voltage

1000 - -

VD=67% V

DRM

, linear ramp, gate o/c

V/s

I

DRM

Peak off-state current

- - 100

Rated V

DRM

mA

I

RRM

Peak reverse current

- - 100

Rated V

RRM

mA

VGT

Gate trigger voltage

- - 2.5

Tj=25°C VD=10V, IT=3A

V

IGT

Gate trigger current

- - 250

mA

VGD

Gate non-trigger voltage

- - 0.25

Rated V

DRM

V

IH

Holding current

- - 300

Tj=25°C

mA

t

gd

Gate-controlled turn-on delay time

- - 2.0

VD=67% V

DRM

, IT=900A, di/dt=10A/µs,

IFG=2A, tr=0.5µs, Tj=25°C

µs

Qrr

Recovered charge

-

1300

1500

ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=100V

µC

Qra

Recovered charge, 50% Chord

-

1050 - µC

Irr

Reverse recovery current

-

120 - A

t

rr

Reverse recovery time

-

18 - µs

tq

Turn-off time

-

120

230

ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=100V, Vdr=67%V

DRM

, dVdr/dt=20V/µs

µs - 180

330

ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=100V, Vdr=67%V

DRM

, dVdr/dt=200V/µs

µs

R

thJK

Thermal resistance, junction to heatsink

- - 0.033

Double side cooled

K/W

- - 0.066

Single side cooled

K/W

F

Mounting force

14 - 16

Note 2.

kN

Wt

Weight

-

280

- g

Characteristics

Notes:-

1) Unless otherwise indicated T

2) For other clamp forces, please consult factory.

Data Sheet. Types N1140LN140 Issue 4 Page 2 of 11 December, 2014

=130°C.

j

Phase Control Thyristor Types N1140LN140

Voltage Grade

V

DRM VRRM

V

V

DSM VRSM

V

VD VR

DC V

14

1400

1500

1050

I

GM

I

G

t

p1

4A/µs

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.

5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.

6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during turn-

on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V

is assumed. This gate drive must be applied when using the full di/dt capability of the device.

The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.

Data Sheet. Types N1140LN140 Issue 4 Page 3 of 11 December, 2014

Phase Control Thyristor Types N1140LN140

T

AVTTT

AV

rff

WrffVV

I







2

2

2

00

2

4

Kj

th

AV

TTT

R

T

W







max

Supplementary Thermal Impedance

Conduction Angle

30°

60°

90°

120°

180°

270°

d.c.

Square wave Double Side Cooled

0.0421

0.0399

0.0383

0.0371

0.0355

0.0339

0.0330

Square wave Anode Side Cooled

0.0746

0.0720

0.0706

0.0696

0.0683

0.0671

0.0660

Sine wave Double Side Cooled

0.0401

0.0377

0.0363

0.0353

0.0331

Sine wave Anode Side Cooled

0.0718

0.0695

0.0685

0.0678

0.0664

Form Factors

Conduction Angle

30°

60°

90°

120°

180°

270°

d.c.

Square wave

3.46

2.45

2

1.73

1.41

1.15 1 Sine wave

3.98

2.78

2.22

1.88

1.57

 

TTTT

IDICIBAV  ln

25°C Coefficients

130°C Coefficients

A

0.8686806

A

0.5478951

B

0.02859513

B

0.03900589

C

1.676531×10-4

C

2.625815×10-4

D

2.681871×10-4

D

2.506837×10-4

8.0 Computer Modelling Parameters

8.1 Device Dissipation Calculations

and:

Where VT0=0.82V, rT=0.28m

R

= Supplementary thermal impedance, see table below and

th

ff = Form factor, see table below.

8.2 Calculating VT using ABCD Coefficients

The on-state characteristic IT vs. VT, on page 6 is represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in

terms of IT given below:

The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for VT agree with the true device characteristic over a current range, which is limited to
that plotted.

Data Sheet. Types N1140LN140 Issue 4 Page 4 of 11 December, 2014