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N1132NC360
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Westcode Semiconductors N1132NC300, N1132NC360 Data Sheet

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Date:- 30 Jan, 2002
WESTCODE
Phase Control Thyristor
Types N1132NC300 to N1132NC360

Absolute Maximum Ratings

VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI I2t
diT/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Repetitive peak off-state voltage, (note 1) 3000-3600 V Non-repetitive peak off-state voltage, (note 1) 3000-3600 V Repetitive peak reverse voltage, (note 1) 3000-3600 V Non-repetitive peak reverse voltage, (note 1) 3100-3700 V
OTHER RATINGS
Mean on-state current. T Mean on-state current. T Mean on-state current. T Nominal RMS on-state current. T D.C. on-state current. T Peak non-repetitive surge tp=10ms, VRM=0.6V Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, VRM=0.6V I2t capacity for fusing tp=10ms, V Maximum rate of rise of on-state current (repetitive), (Note 6) 200 A/µs Maximum rate of rise of on-state current (non-repetitive), (Note 6) 400 A/µs Peak reverse gate voltage 5 V Mean forward gate power 4 W Peak forward gate power 30 W Non-trigger gate voltage, (Note 7) 0.25 V Operating temperature range -40 to +125 °C Storage temperature range -40 to +150 °C
=55°C, (note 2) 1132 A
sink
=85°C, (note 2) 781 A
sink
=85°C, (note 3) 476 A
sink
=25°C, (note 2) 2228 A
sink
=25°C, (note 4) 1945 A
sink
, (note 5) 14.3 kA
RRM
≤
10V, (note 5)
RM
, (note 5) 1.02×10
RRM
≤
10V, (note 5)
RM
Data Sheet Issue:- 1
LIMITS
LIMITS
15.7 kA
6
1.23×10
6
UNITS
UNITS
A2s A2s
Notes: -
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
7)
Rated V
Data Sheet. Types N1132NC300 to N1132NC360 Issue 1. Page 1 of 10 January, 2002
, ITM=2000A, IFG=2A, t
DRM
.
DRM
≤
0.5µs, T
r
case
=125°C.
WESTCODE
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Characteristics

N1132NC300 to N1132NC360
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V V r dv/dt Critical rate of rise of off-state voltage 1000 - - VD=80% V I I V I I t t Q Q I t
t
q
R
Maximum peak on-state voltage - - 2.08 ITM=1830A V
TM
Threshold voltage - - 1.15 V
0
Slope resistance - - 0.51
S
Peak off-state current - - 100 Rated V
DRM
Peak reverse current - - 100 Rated V
RRM
Gate trigger voltage - - 3.0 V
GT
Gate trigger current - - 300
GT
Holding current - - 1000 Tj=25°C mA
H
Gate controlled turn-on delay time - 0.5 1.0
gd
Turn-on time - 1.0 2.0
gt
Recovered Charge - 4200 - µC
rr
Recovered Charge, 50% chord - 2000 2300 µC
ra
Reverse recovery current - 130 - A
rm
Reverse recovery time, 50% chord - 30 -
rr
- 400 600
Turn-off time
- 650 900
Thermal resistance, junction to
th(j-hs)
heatsink
- - 0.024 Double side cooled K/W
- - 0.048 Single side cooled K/W
T
I
FG
I
TM
I
TM
ITM=1000A, tp=1ms, di/dt=10A/µs, V ITM=1000A, tp=1ms, di/dt=10A/µs, V
DRM
RRM
=25°C, VD=10V, IT=3A
j
=2A, tr=0.5µs, VD=67%V
=1000A, di/dt=10A/µs, Tj=25°C
=1000A, tp=1ms, di/dt=10A/µs, Vr=50V
=50V, Vdr=80%V
r
=50V, Vdr=80%V
r
(Note 1)
, linear ramp, gate O/C
DRM
DRM
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
,
UNITS
m
V/µs
mA mA
mA
µs
µs
µs
F Mounting force 19 - 26 kN W
Weight - 510 - g
t
Ω
Notes: -
Unless otherwise indicated Tj=125°C.
1)
Data Sheet. Types N1132NC300 to N1132NC360 Issue 1. Page 2 of 10 January, 2002
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Notes on Ratings and Characteristics

1.0 Voltage Grade Table

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N1132NC300 to N1132NC360
V
Voltage Grade
30 3000 3100 1750 32 3200 3300 1800 34 3400 3500 1850 36 3600 3700 1900

2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.

5.0 Rate of rise of on-state current The maxim um un-primed rate of ris e of on-s tate c urr ent must not exceed 400A/µs at any time during tur n­on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed total device current including that from any local snubber network.

6.0 Gate Drive The recomm ended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than

0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
The pulse duration may need to be configured acc ording to the application but should be no shorter than 20µs, otherwise an increase in pulse current may be needed to supply the necessary charge to trigger.

7.0 Computer Modelling Parameters

7.1 Device Dissipation Calculations

∆
2
4
=
I
AV
Where V0=1.15V, rs=0.51m
R
= Supplementary thermal impedance, see table below.
th
ff
= Form factor, see table below.
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave Double Side Cooled 0.0293 0.0285 0.0278 0.0271 0.0261 0.0249 0.024 Square wave Single Side Cooled 0.0534 0.053 0.0524 0.0518 0.0509 0.0497 0.048
Sine wave Double Side Cooled 0.0286 0.0276 0.0269 0.0263 0.0248 Sine wave Single Side Cooled 0.0531 0.0523 0.0517 0.0511 0.0497
00
⋅⋅
2
rff
Ω,
⋅⋅⋅++−
WrffVV
AVs
and:
s
Supplementary Thermal Impedance
W
AV
=
R
T
th
max
−=∆
TTT
Hsj
Form Factors
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 3.46 2.45 2 1.73 1.41 1.15 1
Sine wave 3.98 2.78 2.22 1.88 1.57
Data Sheet. Types N1132NC300 to N1132NC360 Issue 1. Page 3 of 10 January, 2002
WESTCODE
p
p

7.2 Calculating VT using ABCD Coefficients

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N1132NC300 to N1132NC360
The on-state characteristic I (i) the well established V (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
The constants, derived by curve fitting soft ware, are given below for both hot and c old c harac teris tic s. T he resulting values for V that plotted.

7.3 D.C. Thermal Impedance Calculation

Where p = 1 to n, n is the number of terms in the series and:
t = Duration of heating pulse in seconds. r
= Thermal resistance at time t.
t
= Amplitude of pth term.
r
τ
= Time Constant of rth term.
given below:
T
T
A 0.9993917 A 0.536023064 B 0.05332413 B 0.1240614 C 0.000306204 C 0.000536047 D 0.001359291 D -0.008624576
vs. VT, on page 5 is represented in two ways;
T
and rs tangent used for rating purposes and
0
in
T
()
ln
agree with the true device characteristic over a current range, which is limited to
25°C Coefficients 125°C Coefficients
−
=
∑
=
p
np
 
1
pt
1
t
τ
p
−⋅=
err
 
⋅+⋅+⋅+=
IDICIBAV
TTTT
D.C. Double Side Cooled
Term12345
r
p
τ
p
Term123456
r
p
τ
p

8.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1. (ii) Q

(iii)
0.01249139 6.316833×10
0.8840810 0.1215195 0.03400152 6.742908×10
0.02919832 4.863568×10-33.744798×10-36.818034×10-32.183558×10-31.848294×10
6.298105 3.286174 0.5359179 0.1186897 0.02404574 3.379476×10
is based on a 150µs integration time.
rr
150
=
i.e.
∫
0
FactorK
-3
D.C. Single Side Cooled
µ
s
dtiQ
.
rrrr
t
1
1.850855×10
=
t
2
-3
1.922045×10
Fig. 1
-3
-3
6.135330×10
1.326292×10
-4
-3
-3
-3
Data Sheet. Types N1132NC300 to N1132NC360 Issue 1. Page 4 of 10 January, 2002
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N1132NC300 to N1132NC360

Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient Thermal Impedance

10000
Tj = 25°C
(A)
TM
1000
Instantaneous On-state current - I
Tj = 125°C
0.1
N1132NC300-360
Issue 1
0.01
0.001
0.0001
Transient thermal impedance (K/W)
0.00001
SSC 0.048K/W
DSC 0.024K/W
N1132NC300-360
Issue 1
100
0123456
Instantaneous On-state voltage - V
(V)
TM
0.000001 1E-05 0.0001 0.001 0.01 0.1 1 10 100
Time (s)

Figure 3 - Gate Characteristics - Trigger Limits Figure 4 - Gate Characteristics - Power Curves

6
N1132NC300-360
Issue 1
Tj=25°C
5
4
(V)
IGT, V
GT
3
Gate Trigger Voltage - V
2
1
IGD, V
GD
Max VG dc
GT
125°C
25°C
-10°C
-40°C
Min VG dc
20
N1132NC300-360
Issue 1
Tj=25°C
18
16
14
(V)
GT
12
10
8
Gate Trigger Voltage - V
6
PG 4W dc
4
2
Max VG dc
PG Max 30W dc
Min VG dc
0
0 0.2 0.4 0.6 0.8 1
Gate Trigger Current - I
Data Sheet. Types N1132NC300 to N1132NC360 Issue 1. Page 5 of 10 January, 2002
(A)
GT
0
0246810
Gate Trigger Current - I
(A)
GT
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N1132NC300 to N1132NC360
Figure 5 – Recovered Charge, Q
100000
(µC)
rr
10000
Recovered charge - Q
1000
1 10 100 1000
di/dt (A/µs)
rr
N1132NC300-360
Issue 1
4000A 2000A 1000A 500A

Figure 6 – Recovered charge, Qra (50% chord)

10000
, 50% chord (µC)
ra
Recovered charge - Q
1000
1 10 100 1000
di/dt (A/µs)
N1132NC300-360
Issue 1
4000A 2000A 1000A 500A
Figure 7 – Reverse recovery current, I
1000
N1132NC300-360
Issue 1
(A)
rm
100
Reverse recovery current - I
10
1 10 100 1000
di/dt (A/µs)
4000A 2000A 1000A 500A
rm
Figure 8 – Reverse recovery time, t
100
(µs)
rr
10
Reverse recovery time - t
1
1 10 100 1000
di/dt (A/µs)
rr
N1132NC300-360
Issue 1
4000A 2000A 1000A 500A
Data Sheet. Types N1132NC300 to N1132NC360 Issue 1. Page 6 of 10 January, 2002
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N1132NC300 to N1132NC360

Figure 9 – On-state current vs. Power dissipation – Double Side Cooled (Sine wave)

4500
4000
90°
60°
3500
3000
2500
2000
1500
Maximum forward dissipation (W)
1000
500
0
0 500 1000 1500
Mean forward current (A) (Whole cycle averaged)
30°
N1132NC300-360
180°
120°
Issue 1

Figure 10 – On-state current vs. Heatsink temperature - Double Side Cooled (Sine wave)

150
125
100
75
50
Maximum permissable heatsink temperature (°C)
25
0
0 500 1000 1500
Mean forward current (A) (Whole cycle averaged)
30° 60° 90° 120° 180°
N1132NC300-360
Issue 1

Figure 11 – On-state current vs. Power dissipation – Double Side Cooled (Square wave)

4500
4000
3500
3000
2500
2000
1500
Maximum forward dissipation (W)
1000
500
N1132NC300-360
0
0 500 1000 1500 2000 2500
Mean Forward Current (Amps) (Whole Cycle Averaged)
d.c. 270° 180°
120° 90° 60°
30°
Issue 1

Figure 12 – On-state current vs. Heatsink temperature - Double Side Cooled (Square wave)

150
125
100
75
50
Maximum permissible heatsink temperature (°C)
25
0
0 500 1000 1500 2000 2500
Mean Forward Current (A mps) (Whole Cycl e Averaged)
30° 60° 90° 120°
N1132NC300-360
180
Issue 1
d.c.270°
Data Sheet. Types N1132NC300 to N1132NC360 Issue 1. Page 7 of 10 January, 2002
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N1132NC300 to N1132NC360

Figure 13 – On-state current vs. Power dissipation – Single Side Cooled (Sine wave)

2500
180°
2000
1500
1000
Maximum forward dissipation (W)
500
0
0 200 400 600 800 1000
Mean forward current (A) (Whole cycle averaged)
30°
60°
120°
90°
N1132NC300-360
Issue 1

Figure 14 – On-state current vs. Heatsink temperature - Single Side Cooled (Sine wave)

150
125
100
75
50
Maximum permissable heatsink temperature (°C)
25
0
0 200 400 600 800 1000
Mean forward current (A) (Whole cycle averaged)
30° 60° 90° 120° 180°
N1132NC300-360
Issue 1

Figure 15 – On-state current vs. Power dissipation – Single Side Cooled (Square wave)

2500
2000
1500
d.c. 270° 180° 120° 90°
Issue 1
60° 30°
1000
Maximum forward dissipation (W)
500
N1132NC300-360
0
0 200 400 600 800 1000 1200 1400
Mean Forward Current (Amps) (Whole Cycle Averaged)

Figure 16 – On-state current vs. Heatsink temperature - Single Side Cooled (Square wave)

150
125
100
75
50
Maximum permissible heatsink temperature (°C)
25
0
0 200 400 600 800 1000 1200 1400
Mean Forward Current (Amps) (Whole Cycle Averaged)
30° 60° 90° 120° 180° d.c.270°
N1132NC300-360
Issue 1
Data Sheet. Types N1132NC300 to N1132NC360 Issue 1. Page 8 of 10 January, 2002
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Figure 17 – Maximum surge and I2t Ratings

N1132NC300 to N1132NC360
100000
10000
Total peak half sine surge current (A)
1000
135101 5 10 50 100
Duration of surge (ms) Duration of surge (cycles @ 50Hz)
I2t: V
I
TSM
RRM
: 60% V
≤
10V
RRM
Tj (initial) = 125°C N1132NC300-360
I2t: 60% V
I
: V
TSM
Issue 1
RRM
≤
RRM
10V
1.00E+07
1.00E+06
1.00E+05
s)
2
t (A
2
Maximum I
Data Sheet. Types N1132NC300 to N1132NC360 Issue 1. Page 9 of 10 January, 2002
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Outline Drawing & Ordering Information

N1132NC300 to N1132NC360
ORDERING INFORMATION
N1132 NC
Fixed
Type Code
Typical order code: N1132NC320 – 3200V V
Outline Code
Fixed
DRM
, V
, 1000V/µs dv/dt, 27. 7mm clamp height capsule.
RRM
(Please quote 10 digit code as bel ow)
♦ ♦
♦ ♦
♦ ♦♦ ♦
Voltage Code
30-36
UK: Westcode Semiconductors Ltd.
P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.
Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448
WESTCODE
E-Mail: WSL.sales@westcode.com
USA: Westcode Semiconductors Inc.
3270 Cherry Avenue, Long Beach, California 90807
Tel: +1 (562) 595 6971 Fax: +1 (562) 595 8182
Internet: http://www.westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report.
E-Mail: WSI.sales@westcode.com
0
Fixed turn-off
time code
© Westcode Semiconductors Ltd.
Data Sheet. Types N1132NC300 to N1132NC360 Issue 1. Page 10 of 10 January, 2002
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