Westcode Semiconductors N1010NC300, N1010NC380 Data Sheet
Date:- 24 Oct, 2001
WESTCODE
Phase Control Thyristor
Types N1010NC300 to N1010NC380
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
diT/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Repetitive peak off-state voltage, (note 1) 3000-3800 V
Non-repetitive peak off-state voltage, (note 1) 3000-3800 V
Repetitive peak reverse voltage, (note 1) 3000-3800 V
Non-repetitive peak reverse voltage, (note 1) 3100-3900 V
OTHER RATINGS
Mean on-state current. T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current. T
D.C. on-state current. T
Peak non-repetitive surge tp=10ms, Vrm=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, Vrm=0.6V
I2t capacity for fusing tp=10ms, V
Maximum rate of rise of on-state current (repetitive), (Note 6) 200 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 400 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 4 W
Peak forward gate power 30 W
Non-trigger gate voltage, (Note 7) 0.25 V
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
=55°C, (note 2) 1010 A
sink
=85°C, (note 2) 704 A
sink
=85°C, (note 3) 436 A
sink
=25°C, (note 2) 1978 A
sink
=25°C, (note 4) 1754 A
sink
, (note 5) 12100 A
RRM
≤
10V, (note 5)
rm
, (note 5) 732×10
RRM
≤
10V, (note 5)
rm
Data Sheet Issue:- 1
MAXIMUM
LIMITS
MAXIMUM
LIMITS
13300 A
3
3
884×10
UNITS
UNITS
A2s
A2s
Notes: -
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
7)
Rated V
Data Sheet. Types N1010NC300 to N1010NC380 Issue 1. Page 1 of10 October, 2001
, ITM=1000A, IFG=2A, t
DRM
.
DRM
≤
0.5µs, T
r
case
=125°C.
WESTCODE
Positive development in power electronics
Characteristics
N1010NC300 to N1010NC380
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
V
r
S
dv/dt Critical rate of rise of off-state voltage 200 - - VD=80% V
I
DRM
I
RRM
V
I
GT
I
H
t
gd
t
gt
Q
Q
I
rm
t
rr
t
q
R
Maximum peak on-state voltage - - 2.43 ITM=1830A V
TM
Threshold voltage - - 1.17 V
0
Slope resistance - - 0.687
Peak off-state current - - 100 Rated V
Peak reverse current - - 100 Rated V
Gate trigger voltage - - 3.0 V
GT
T
Gate trigger current - - 300
DRM
RRM
=25°C, VD=10V, IT=2A
j
Holding current - - 1000 Tj=25°C mA
Gate controlled turn-on delay time - 1.0 1.5
Turn-on time - 2.5 3.0
Recovered Charge - 4800 - µC
rr
Recovered Charge, 50% chord - 2000 2500 µC
ra
Reverse recovery current - 125 - A
VD=67%V
I
=2A, tr=0.5µs, Tj=25°C
FG
I
=1000A, tp=1000µs, di/dt=10A/µs,
TM
V
=50V
r
Reverse recovery time, 50% chord - 32 -
ITM=1000A, tp=1000µs, di/dt=10A/µs,
V
=50V, Vdr=80%V
r
ITM=1000A, tp=1000µs, di/dt=10A/µs,
V
=50V, Vdr=80%V
r
Turn-off time
Thermal resistance, junction to heatsink
th(j-hs)
- 600 650
- 1100 1200
--0.024 Double side cooled K/W
--
0.048 Single side cooled K/W
(Note 1)
, linear ramp, Gate O/C
DRM
, ITM=1000A, di/dt=20A/µs,
DRM
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
UNITS
m
V/µs
mA
mA
mA
µs
µs
µs
F Mounting force 19 - 29 kN
W
Weight - 510 - g
t
Ω
Notes: -
Unless otherwise indicated Tj=125°C.
1)
Data Sheet. Types N1010NC300 to N1010NC380 Issue 1. Page 2 of10 October, 2001
WESTCODE
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Positive development in power electronics
N1010NC300 to N1010NC380
V
Voltage Grade
30 3000 3100 1750
32 3200 3300 1800
34 3400 3500 1850
36 3600 3700 1900
38 3800 3900 1950
2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.
5.0 Rate of rise of on-state current The maxim um un-primed rate of r ise of on-state current mus t not ex c eed 400A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network.
6.0 Gate Drive The recomm ended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
The pulse duration may need to be configured acc ording to the application but should be no shorter than
20µs, otherwise an increase in pulse current may be needed to supply the necessary charge to trigger.
7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
∆
2
4
=
I
AV
00
2
Where V0=1.17V, rs=0.687m
R
= Supplementary thermal impedance, see table below.
th
ff
= Form factor, see table below.
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave Double Side Cooled 0.03047 0.03035 0.02857 0.02733 0.02569 0.0242 0.024
Square wave Single Side Cooled 0.05823 0.0577 0.05408 0.05286 0.05121 0.0497 0.048
Sine wave Double Side Cooled 0.0303 0.0275 0.0262 0.02524 0.024
Sine wave Single Side Cooled 0.05588 0.05323 0.05186 0.05089 0.048
Ω,
2
2
⋅⋅
rff
s
Supplementary Thermal Impedance
⋅⋅⋅++−
WrffVV
AVs
and:
W
AV
=
R
max
T
th
−=∆
TTT
Hsj
Form Factors
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 3.46 2.45 2 1.73 1.41 1.15 1
Sine wave 3.98 2.78 2.22 1.88 1.57
Data Sheet. Types N1010NC300 to N1010NC380 Issue 1. Page 3 of10 October, 2001
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