Westcode Semiconductors N0910LC200, N0910LC260 Data Sheet
Phase Control Thyristor
Types N0910LC200 to N0910LC260
Absolute Maximum Ratings
Date:- 8 August 2012
Data Sheet Issue:- 3
V
DRM
V
DSM
V
RRM
V
RSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) 2000-2600 V
Non-repetitive peak off-state voltage, (note 1) 2000-2600 V
Repetitive peak reverse voltage, (note 1) 2000-2600 V
Non-repetitive peak reverse voltage, (note 1) 2100-2700 V
MAXIMUM
LIMITS
UNITS
OTHER RATINGS
I
Maximum average on-state current, T
T(AVM)
I
Maximum average on-state current. T
T(AVM)
I
Maximum average on-state current. T
T(AVM)
I
Nominal RMS on-state current, T
T(RMS)
I
D.C. on-state current, T
T(d.c.)
I
Peak non-repetitive surge tp=10ms, Vrm=0.6V
TSM
I
TSM2
I2t I2t capacity for fusing tp=10ms, Vrm=0.6V
I2t
(di/dt)cr
V
RGM
P
G(AV)
PGM Peak forward gate power 30 W
TS Operating temperature range -40 to +125 °C
T
stg
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
Peak non-repetitive surge t
2
I
t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6) 300 A/µs
Critical rate of rise of on-state current (non-repetitive), (Note 6) 600 A/µs
Peak reverse gate voltage 10 V
Mean forward gate power 4 W
Storage temperature range -40 to +150 °C
initial.
=67% V
D
, IFG=2A, tr≤0.5µs, T
DRM
j
=25°C, (note 4)
sink
=10ms, Vrm≤10V, (note 5)
p
=125°C.
case
=55°C, (note 2)
sink
=85°C, (note 2)
sink
=85°C, (note 3)
sink
=25°C, (note 2)
sink
, (note 5) 423×103 A
RRM
j
, (note 5) 9.2 A
RRM
below 25°C.
MAXIMUM
LIMITS
910 A
630 A
386 A
1788 A
1569 A
10.1 A
3
510×10
A
UNITS
2
2
s
s
Data Sheet. Types N0910LC200 to N0910LC260 Issue 3 Page 1 of 11 August, 2012
Phase Control Thyristor Types N0910LC200 to N0910LC260
r
r
r
r
r
r
Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
VTM Maximum peak on-state voltage - - 2.07 ITM=1700A V
VT0 Threshold voltage - - 1.04 V
rT Slope resistance - - 0.606
(dv/dt)cr Critical rate of rise of off-state voltage 1000 - - VD=80% V
I
Peak off-state current - - 60 Rated V
DRM
I
Peak reverse current - - 60 Rated V
RRM
VGT Gate trigger voltage - - 3.0
IGT Gate trigger current - - 300 mA
=25°C VD=10V, IT=3A
T
j
VGD Gate non-trigger voltage - - 0.25 Rated V
, linear ramp, gate o/c
DRM
mA
DRM
mA
RRM
V
DRM
IH Holding current - - 1000 Tj=25°C mA
t
gd
t
gt
Gate-controlled turn-on delay time 0.5 1.0
Turn-on time - 1.0 2.0 µs
V
=67% V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
, IT=1000A, di/dt=10A/µs,
DRM
Qrr Recovered charge - 2400 Qra Recovered charge, 50% Chord - 1250 1500 µC
Irr Reverse recovery current - 100 - A
t
rr
Reverse recovery time - 25.0 - µs
- 600 -
tq Turn-off time
- 1000 -
R
thJK
Thermal resistance, junction to heatsink
- - 0.032 Double side cooled K/W
- - 0.064 Single side cooled K/W
I
=1000A, tp=1000µs, di/dt=10A/µs,
TM
V
=50V
r
=1000A, tp=1000µs, di/dt=10A/µs,
I
TM
V
=50V, V
=1000A, tp=1000µs, di/dt=10A/µs,
I
TM
V
=50V, V
=80%V
d
=80%V
d
DRM
DRM
, dV
/dt=20V/µs
d
, dV
/dt=200V/µs
d
F Mounting force 10 - 20 kN
Wt Weight - 340 - g
mΩ
V/µs
V
µs
µC
µs
Notes:-
1) Unless otherwise indicated T
Data Sheet. Types N0910LC200 to N0910LC260 Issue 3 Page 2 of 11 August, 2012
=125°C.
j
Phase Control Thyristor Types N0910LC200 to N0910LC260
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
VD VR
DC V
20 2000 2100 1250
22 2200 2300 1350
24 2400 2500 1450
26 2600 2700 1550
2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
below 25°C.
j
4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.
5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 600A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 300A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of I
(t
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
p1
should be between five and ten times IGT, which is shown on page 2. Its duration
GM
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
should remain flowing for the same duration as the anode current and have a
G
.
GT
Data Sheet. Types N0910LC200 to N0910LC260 Issue 3 Page 3 of 11 August, 2012
Phase Control Thyristor Types N0910LC200 to N0910LC260
∆
(
8.0 Computer Modelling Parameters
8.1 Device Dissipation Calculations
2
4
=
I
AV
Where V
R
th
=1.04V, rT=0.606mΩ,
T0
= Supplementary thermal impedance, see table below and
00
2
⋅⋅
rff
T
⋅⋅⋅++−
WrffVV
AVTTT
and:
W
AV
=
R
T
th
max
TTT
−=∆
Hsj
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave Double Side Cooled 0.048 0.0436 0.0413 0.0388 0.036 0.0345 0.032
Square wave Single Side Cooled 0.079 0.0769 0.074 0.0716 0.0688 0.0665 0.064
Sine wave Double Side Cooled 0.0415 0.0394 0.0378 0.0355 0.032
Sine wave Single Side Cooled 0.0735 0.0718 0.07 0.0679 0.064
Form Factors
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 3.464 2.449 2 1.732 1.414 1.149 1
Sine wave 3.98 2.778 2.22 1.879 1.57
8.2 Calculating V
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
using ABCD Coefficients
T
vs. VT, on page 6 is represented in two ways;
T
and rT tangent used for rating purposes and
T0
given below:
T
in
T
)
The constants, derived by curve fitting software, are given below for both hot and cold characteristics.
The resulting values for V
to that plotted.
Data Sheet. Types N0910LC200 to N0910LC260 Issue 3 Page 4 of 11 August, 2012
agree with the true device characteristic over a current range, which is limited
T
25°C Coefficients 125°C Coefficients
A 0.908566 A 0.417877
B 0.02200912 B 0.1200233
C 3.661922x10
D 5.349066×10-3 D -7.297986×10-3
-4
C 6.308007x10
IDICIBAV ⋅+⋅+⋅+= ln
TTTT
-4
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