Westcode Semiconductors N0465WN140, N0465WN160 Data Sheet
Phase Control Thyristor
Types N0465WN140 to N0465WN160
Absolute Maximum Ratings
Date: - 15th October, 2013
Data Sheet Issue:- P2
V
DRM
V
DSM
V
RRM
V
RSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) 1400-1600 V
Non-repetitive peak off-state voltage, (note 1) 1500-1700 V
Repetitive peak reverse voltage, (note 1) 1400-1600 V
Non-repetitive peak reverse voltage, (note 1) 1500-1700 V
MAXIMUM
LIMITS
UNITS
OTHER RATINGS
I
Maximum average on-state current, T
T(AV)M
I
Maximum average on-state current. T
T(AV)M
I
Maximum average on-state current. T
T(AV)M
I
Nominal RMS on-state current, T
T(RMS)M
I
D.C. on-state current, T
T(d.c.)
I
Peak non-repetitive surge tp=10ms, Vrm=60%V
TSM
I
TSM2
Peak non-repetitive surge t
=25°C, (note 4) 790 A
sink
=10ms, Vrm≤10V, (note 5)
p
I2t I2t capacity for fusing tp=10ms, Vrm=60%V
I2t
2
I
t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
(di/dt)cr Critical rate of rise of on-state current (note 6)
V
Peak reverse gate voltage 5 V
RGM
P
Mean forward gate power 3 W
G(AV)
PGM Peak forward gate power 30 W
T
Operating temperature range -60 to +125 °C
j op
T
Storage temperature range -60 to +125 °C
stg
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Anode side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
=67% V
D
, ITM=600A, IFG=2A, tr≤0.5µs, T
DRM
initial.
j
=55°C, (note 2) 465 A
sink
=85°C, (note 2) 315 A
sink
=85°C, (note 3) 180 A
sink
=25°C, (note 2) 920 A
sink
, (note 5) 4500 A
RRM
, (note 5) 101×103 A
RRM
(continuous, 50Hz) 75
(non-repetitive) 250
below 25°C.
j
=125°C.
case
MAXIMUM
LIMITS
UNITS
5000 A
3
125×10
A
A/µs (repetitive, 50Hz, 60s) 125
2
s
2
s
Data Sheet. Types N0465WN140 to N0465WN160 Issue P2 Page 1 of 3 October 2013
Phase Control Thyristor Types N0465WN140 to N0465WN160
r
r
r
Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
VTM Maximum peak on-state voltage - - 1.30 ITM=465A V
VT0 Threshold voltage - - 0.90 V
rT Slope resistance - - 0.85
(dv/dt)cr Critical rate of rise of off-state voltage 1000 - - VD=67% V
I
Peak off-state current - - 50 Rated V
DRM
I
Peak reverse current - - 50 Rated V
RRM
VGT Gate trigger voltage - - 2.50
IGT Gate trigger current - - 250 mA
=25°C VD=10V, IT=3A
T
j
VGD Gate non-trigger voltage - - 0.25 Rated V
, linear ramp, gate o/c
DRM
mA
DRM
mA
RRM
V
DRM
IH Holding current - - 250 Tj=25°C mA
=67% V
V
t
gd
Gate-controlled turn-on delay time - - 2.0
tq Turn-off time - - 125
D
I
=2A, tr=0.5µs, Tj=25°C
FG
=300A, tp=500µs, di/dt=10A/µs,
I
TM
V
=100V, V
, IT=300A, di/dt=10A/µs,
DRM
=67%V
d
DRM
, dV
d
/dt=50V/µs
- - 0.080 Double side cooled K/W
R
thJK
Thermal resistance, junction to heatsink
- - 0.174 Anode side cooled K/W
- - 0.146 Cathode side cooled K/W
F Mounting force 5 - 7 Note 2. kN
Wt Weight - 70 - g
mΩ
V/µs
V
µs
µs
Notes:-
1) Unless otherwise indicated T
2)
For other clamp forces, please consult factory.
=125°C.
j
Data Sheet. Types N0465WN140 to N0465WN160 Issue P2 Page 2 of 3 October 2013
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