Datasheet N0131SH120, N0131SH160 Datasheet (Westcode Semiconductors)

Date:- 23rd Sept 2014
Data Sheet Issue:- 3

VOLTAGE RATINGS

MAXIMUM

LIMITS

UNITS

V

DRM

Repetitive peak off-state voltage, (note 1)

1200-1600

V

V

DSM

Non-repetitive peak off-state voltage, (note 1)

1200-1600

V

V

RRM

Repetitive peak reverse voltage, (note 1)

1200-1600

V

V

RSM

Non-repetitive peak reverse voltage, (note 1)

1300-1600

V

OTHER RATINGS

MAXIMUM

LIMITS

UNITS

I

T(AV)

Mean on-state current, T

sink

=55°C, (note 2)

131

A

I

T(AV)

Mean on-state current. T

sink

=85°C, (note 2)

85

A

I

T(RMS)

Nominal RMS on-state current, T

sink

=25°C, (note 2)

269

A

I

T(d.c.)

D.C. on-state current, T

sink

=25°C, (note 4)

212

A

I

TSM

Peak non-repetitive surge tp=10ms, VRM=0.6V

RRM

, (note 5)

1700

A

I

TSM2

Peak non-repetitive surge tp=10ms, VRM10V, (note 5)

1950

A

I2t

I2t capacity for fusing tp=10ms, VRM=0.6V

RRM

, (note 5)

14.5×103

A2s

I2t

I2t capacity for fusing tp=10ms, VRM10V, (note 5)

19×103

A2s

(di/dt)cr

Maximum rate of rise of on-state current (repetitive), (Note 6)

500

A/µs

Maximum rate of rise of on-state current (non-repetitive), (Note 6)

1000

A/µs

V

FGM

Peak forward gate voltage

18

V

V

RGM

Peak reverse gate voltage

5

V

P

G(AV)

Mean forward gate power

2

W

PGM

Peak forward gate power

100

W

VGD

Non-trigger gate voltage, (Note 7)

0.25

V

THS

Operating temperature range

-40 to +125

°C

T

stg

Storage temperature range

-40 to +150

°C

Phase Control Thyristor

Types N0131SH120 to N0131SH160

Absolute Maximum Ratings

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

=67% V

D

7) Rated V

, IFG=2A, tr0.5µs, T

DRM

.

DRM

initial.

j

=125°C.

case

Data Sheet. Types N0131SH120-160 Issue 3 Page 1 of 10 September 2014

below 25°C.

j

Fast Turn-Off Thyristor N0131SH120-N0131SH160

PARAMETER

MIN.

TYP.

MAX.

TEST CONDITIONS (Note 1)

UNITS

VTM

Maximum peak on-state voltage

- - 2.19

ITM=270A

V

VT0

Threshold voltage

- - 1.57 V

rT

Slope resistance

- - 2.29

m

(dv/dt)cr

Critical rate of rise of off-state voltage

200 - -

VD=80% V

DRM

V/s

I

DRM

Peak off-state current

- - 20

Rated V

DRM

mA

I

RRM

Peak reverse current

- - 20

Rated V

RRM

mA

VGT

Gate trigger voltage

- - 3.0

Tj=25°C

V

IGT

Gate trigger current

- - 150

Tj=25°C VD=10V, IT=3A

mA

IH

Holding current

- - 600

Tj=25°C

mA

R

thJK

Thermal resistance, junction to heatsink

- - 0.23

Double side cooled

K/W

F

Mounting torque

- - 14 kN

Wt

Weight

-

130

- g

Characteristics

Notes:-

1) Unless otherwise indicated T

=125°C.

j

Data Sheet. Types N0131SH120-160 Issue 3 Page 2 of 10 September 2014

Fast Turn-Off Thyristor N0131SH120-N0131SH160

Voltage Grade

V

DRM VDSM VRRM

V

V

RSM

V

VD VR

DC V

12

1200

1300

810

16

1600

1700

1040

vqpulse ttt

f





1

max

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by

Sales/Production.

4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

(tq) and for the off-state voltage to reach full value (tv), i.e.

Data Sheet. Types N0131SH120-160 Issue 3 Page 3 of 10 September 2014

Fast Turn-Off Thyristor N0131SH120-N0131SH160

 

 

HsJthAVSINKPAV

RWT and fEW



 125

.)(max

 

 

HsJthoriginalSINKnewSINK

RfkETT





)()(

10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules

Let R
and T

Then the average dissipation will be:

11.0 Reverse Recovery Loss

11.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:

be the steady-state d.c. thermal resistance (junction to sink)

th(J-Hs)

be the heat sink temperature.

SINK

where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)

f = rated frequency Hz at the original heat sink temperature.
R

= d.c. thermal resistance (°C/W).

th(J-Hs)

Data Sheet. Types N0131SH120-160 Issue 3 Page 4 of 10 September 2014

Fast Turn-Off Thyristor N0131SH120-N0131SH160

fEWW

(original)(TOT)



   

 

fRETT

thoriginalSINKnewSINK



dt

di

S

r

C

V

R



 4

2

Where:

Vr = Commutating source voltage

CS = Snubber capacitance

R =

Snubber resistance

The total dissipation is now given by:

11.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz

Where T
T

SINK (original)

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.

11.3 Reverse Recovery Loss by Measurement

This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically

damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:

SINK (new)

is the required maximum heat sink temperature and

is the heat sink temperature given with the frequency ratings.

12.0 Gate Drive
The recommended pulse gate drive is 30V, 15 with a short-circuit current rise time of not more than

0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter

than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.

Data Sheet. Types N0131SH120-160 Issue 3 Page 5 of 10 September 2014

Fast Turn-Off Thyristor N0131SH120-N0131SH160

Figure 1 - On-state characteristics of Limit device

Figure 2 – Gate characteristics - Trigger limits

Figure 3 - Gate characteristics - Power curves

N0131SH120-160

Issue 3

N0131SH120-160

Issue 3

Instantaneous on-state voltage (V))

Instantaneous on

-state current (A)

N0131SH120-160

Issue 3

Curves

Data Sheet. Types N0131SH120-160 Issue 3 Page 6 of 10 September 2014

Fast Turn-Off Thyristor N0131SH120-N0131SH160

Figure 4 – Power dissipation and case temperature Vs. current – Square wave

N0131SH120-160

Issue 3

Data Sheet. Types N0131SH120-160 Issue 3 Page 7 of 10 September 2014

Fast Turn-Off Thyristor N0131SH120-N0131SH160

Figure 5 – Power dissipation and case temperature Vs. current – Sine wave

N0131SH120-160

Issue 3

Data Sheet. Types N0131SH120-160 Issue 3 Page 8 of 10 September 2014

Fast Turn-Off Thyristor N0131SH120-N0131SH160

Figure 6 – thermal resistance – Junction to case

Figure 7 - Maximum surge and I2t Ratings at initial TJ – 125°C

N0131SH120-160

Issue 3

N0131SH120-160

Issue 3

Data Sheet. Types N0131SH120-160 Issue 3 Page 9 of 10 September 2014

Fast Turn-Off Thyristor N0131SH120-N0131SH160

101A231

ORDERING INFORMATION (Please quote 10 digit code as below)

N0131

SH

♦♦



Fixed

Type Code

Fixed

Outline Code

Off-state Voltage Code

V

DRM

/100

12-16

Fixed Code

Typical order code: N0131SH120 – 1200V V

DRM

, ½” stud with lead

IXYS Semiconductor GmbH

Edisonstraße 15
D-68623 Lampertheim
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

IXYS UK Westcode Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

Tel: [phone]

Fax: [phone]

E-mail: [e-mail]

IXYS Corporation

1590 Buckeye Drive
Milpitas CA 95035-7418
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

www.ixysuk.com

www.ixys.com

IXYS Long Beach

IXYS Long Beach, Inc

2500 Mira Mar Ave, Long Beach

CA 90815

Tel: [phone]

Fax: [phone]

E-mail: [e-mail]

The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.

In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time
without prior notice.

Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.

© IXYS UK Westcode Ltd.

Outline Drawing & Ordering Information

Data Sheet. Types N0131SH120-160 Issue 3 Page 10 of 10 September 2014