Westcode Semiconductors M3770Z#200, M3770Z#300 Data Sheet

The

data sheet

Fast Recovery Diode

Types M3770Z#200 to M3770Z#300

on

the subsequent pages

data for this product.

(Rating Report 94DR02

of

this document is a scanned copy of existing

Issue 1)

This data reflects the old part number for this product which is:

This

part number must NOT be used for ordering purposes - please use the ordering

particulars detailed below.

The following links will direct you to the appropriate outline drawings

W7

Outline

- 37mm clamp height capsule

Outline W42 - 26mm clamp height capsule

Where

any information on the product matrix page differs from that

the product matrix must be considered correct

An electronic data sheet for this product is presently

For

further information on this product, please contact your local ASM or distributor.

Alternatively, please contact Westcode as detailed below.

Ordering Particulars

M3770 Z#

Fixed Type ZC - 37mm clamp height capsule

Code

ZD - 26mm clamp height capsule

Voltage code

V

RRM

20-30

SM20-30C/DXC964.

in

the following data,

in

preparation.

••

/100

0

Fixed Code

Typical Order Code: M3770ZC220, 37mm clamp height capsule, 2200V

IXYS

Semiconductor

Edisonstrar..e 15

D-68623 Lampertheim

Tel: [phone]

Fax:

[phone]

E-mail: [e-mail]

IXYS

Corporation

3540 Bassett Street
Santa Clara
Tel:
Fax:

E-mail: [e-mail]

The

information

permission

In the
Devices

and

limits

CA 95054 USA

+1

[phone]

+1

[phone]

contained herein is confidential and

of

and in

interest

of

product

with

a suffix

contained

the

manner

improvement,

code

(2-1etter, 3-letter

in

this report.

GmbH

permitted

An i!lIXYS Company

is

protected by Copyright.

by

the proprietors

Westcode

or

letter/digit/letter combination) added to their

Westcode

reserves the right to

Semiconductors Ltd.

change

E

www.westcode.com

www.ixvs.com

The

infonnation may not be used or disclosed except with

specifications

at

any time

without

prior notice.

generic

code are not necessarily subject to the conditions

E

the

written

VRRMNDRM

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

E-mail: [e-mail]

E-mail: [e-mail]

Tel: [phone]

Fax: +44

Westcode Semiconductors

Long Beach CA

(0)1249 659448

3270 Cherry Avenue

90807 USA

+1

(562) 595

Tel:

Fax:

+1

[phone]

© Westcode Semiconductors

Inc

6971

ltd,

I Page Issue

:-

1

Rating Report

Origin: Q.E.L.

by:

Written

capsule.

Ratings

Voltage

V

RRM

IF(A

M

This diode consists of a diffused

This report supersedes Advance Data AD94Dll, dated

Grades) A blocking voltage derating factor

V)

: Single phase:

Double

QUALITY

No:

94DR02

gJA.,r

) of

0.13% per

to

this device for Tj below

)

)

) (Note 1 & 2 page

50

Hz,

Side Cooled T

AND

Checked: cf{

deg.

180°

=

55°C,

HS

EVALUATION

Diode Capsule

.<3~'

76

mm diameter silicon slice, reference FQJ, mounted

Celsius is applicable

25°C

4)

half sinewave;

100°C

SM20

- 30C/DXC974

Approved:

14th

July,

LABORATORY

Date: 7th September,

Pages:

27

~

1994.

:

2100 -3100

: 2000 - 3000 V

:

3775

20

.-

in

-30

A,

1994

a cold

2405

weld

V

A

Single Side Cooled T

I

: t = lOms halfsinewave; TJ (initial) =

FSM

I

: t = lOms halfsinewave; T

FSM

2

It:

t =

10ms;

TJ (initial) =

2

It:

t =

10ms;

TJ (initial) =

2

It:

t =

3ms;

TJ (initial) =

T

HS

Operating

T

: Non-operating

stg

Range

HS

150°C;

150°C;

150°C;

=

100°C

) Double side cooled

)

150°C

(initial) =

J

V

V

V

RM

RM

RM

150°C

= 0.6V

::;

lOV

::;

lOY

V

= 0.6V RRM(MAX)

RM

VRM::;

~MAX)

lOY

1415

:

:

7115

:

6000

:

44.0 kA

: 48.4 kA

: -40

To

:

-55

To

A

A

A

+150

+150

°c
°c

-2-

R.R. No. :
R.R. Issue 1
Page Issue : 1

94DR02/CXC974

Characteristics

A

:T

=2SOC

J

B : TJ=25°C
C : T

= 25°C

J

D : TJ=25°C

A : Constant
B : In(iF)

C : iF

D

:"

iF

V

at

IFM

FM

~(J-HS)

I

RRM

= 4700 A

Double side cooled )

Single side cooled )

:

at

VRRM(MAX)

(Maximum

) Valid range 200 A to 8000 A

)

) Valid range 200 A to 8000 A

)

values unless otherwise stated)

)

Steady-state d.c. and

1

<l>

a.c. resistive load

V

1.19

mn

0.118

: 0.596789

: 0.04632052
: 3.04052E-5
: 0.008459116

: 0.423553
: 0.02954106

1.73642E-5

0.0140443

1.74 V

: 0.011 KIW
: 0.022 KIW

150mA

V fr :

at

dIldt = 1000

Reverse recovery

diR/dt =

Q

(total area)

RR

Q

(50% chord)

RA

~

(50% chord)

IRM

Mounting Force

Outline

Drawing

JEDEC Outline No.

Nf!s

at

IFM = 1000 A; tp = 1000

60Nf!s;

NOTE:

V

=

RM

All characteristics are

50

f!s

V

C Outline
D Outline

at

TV J = T Jrnax operating unless stated otherwise.

23.8 V

: 2265).l.C

1500

!lC

: 7

f!S

: 340 A

: 27 - 47 kN

(2700 - 4700 kg.I)

: 100A293

: 100A31O

CONTENTS

- 3 -

RR

No.

: 94DR02/CXC974

RR

Issue 1

Page Issue : 1

Ratings and Characteristics
Contents

Voltage Grade Table
Extension of Voltage Grades
Introduction
Notes on the Ratings

(a)

Square-wave Ratings

(b) Energy per Pulse Characteristics

(c)

ABCD

Constants

(d)

Reverse Recovery Rating

Reverse Recovery Loss

(a)

Determination by Measurement

(b) Determination without Measurement

Note I Reverse Recovery Loss by Measurement

Limit On-state Characteristics
Transient Thermal Impedance
Surge Rating
Forward Recovery Voltage

Recovered
Total Recovered Charge Q
Peak Reverse Recovered Current

Maximum Recovery Time 50% Chord

Charge 50% Chord Q

RR

RA

IRM

tRR
Reverse Recovery Energy per Pulse
Square Wave Frequency Rating
Square Wave Frequency Rating
Square Wave Frequency Rating
Square Wave Frequency Rating
Energy per Pulse
Energy per Pulse 500

100

AJ).lS

AJ).lS
Sine Wave Frequency Ratings
Sine

Wave

Frequency Ratings

Wave

Sine

Energy per Pulse

55°C
85°C
55°C
85°C

55°C
85°C

Sink
Sink
Sink 500
Sink 500

Sink
Sink

100
100

Outline Drawings '

A/).lS
AJ).lS
A/).lS
AJ).lS

1,2

3

4

4

5

5

5

5

5

6

6

7

8

9

10

11

12
13

14
15

16

17

18

19

20

21

22

23

24

25

26,27

-4-

RR

No. : 94DR02/CXC974

RR

Issue

: 1

Page

Issue

: 1

Voltage

Ratings Table

Voltage Class

20 2,000
22 2,200 2,300
24 2,400
26 2,600
28 2,800 2,900
30 3,000 3,100

1.

This

Report

is

applicable to higher

2.

A blocking voltage derating factor

or

lower

of

0.13% per

V

RRM

V

V V

2,100

2,500

2,700

voltage grades when supply has been agreed

deg.

Celsius is applicable

to

this

device

RSM

by

SaleslProduction.

for

TJ below

25°C.

INTRODUCTION

- 5 -

R.R

No.

: 94DR02/CXC974

RR

Issue : 1

Page Issue : 1

This diode series comprises fast recovery capsule devices with all diffused silicon slices. All these diodes
controned reverse recovery characteristics with good "K" factors,
applications.

NOTES

frequency ratings.

in

expression for

ON

TIlE

RATINGS

(a) Square wave ratings

are

These ratings

(b) Energy

These curves enable rapid estimation

Let:

Hertz. Let R

Ep

per

be

TSINK = TJ(MAX) - (Ep *

(c) ABCD Constants

These constants (applicable only over current range

the

givcn for leading edge linear rates

pulse characteristics

of

device dissipation

the

Energy

per

pulse for a given current and pulse width,

thl-HS

be

the steady state d.c.

i*

forward characteristic given below:

Rthl-HS)

thennal

resistance (junction to heat sink).

and

are

of

rise

offorward

to

be obtained for conditions

of

V F characteristic

particularly suitable for use

current

of

100

and

500 AiIlS.

not

covered

in

joules. Let f

on

page 8)

be

the repetition rate,

are

the coefficicnts

in

free-wheel

by

have

the

of
..

the

Vj

= A + B.

(d) Reverse recovery ratings

(i)

Q

is based

RA

In

on

(i

50%

j)

+

C.

i j + D.

IRM

chord

r---------------------------------------~

Jif

as

shown below.

: whcre

iF

= instantaneous forward current.

-6-

R.R.

No. : 94DR02/CXC974

R.R.

Issue

: 1

Page

Issue

: 1

(ii) Q

(iii) K factor =

Reverse

The

(a)

From

present

waveform

this

is

RR

i.e.

Recovery

following

Detennination

waveforms

during

recovery,

be

TSINK(new) = TSINK(original) - E * (k+

where

k =

0.287

E = Area under

f=

Rated

frequency

Rthl-HS

The total dissipation

=

based

on

a

150

llS

150llS

QRR

= J

iRR.dt

t=O

~~

Loss

procedure

E joules per

reverse

d.c.

is

recommended

by

measurement

of

recovery

an instantaneous reverse

pulse.

(K/W)/s

loss

waveform

in

Hz

at

the

thermal resistance (KIW)

is

now

given

integration

current obtained

A new sink temperature

original sink

by

time

for

per

pulse

W(tot)

use

where it

from

recovery

in

joules

temperature.

= W(original) + E * j

is

a high

loss

can

(W.s.)

necessary

frequency

waveform

then

be

i*

Rth(J-HS»)

to

include

shunt (see

must

be

evaluated

reverse

recovery

Note

1) and

constructed.

from:

reverse

Let the

loss.

area

voltage

under

(b) Determination without

In

circumstances

the additional

Let E be

Let f
then TSINK(new) = .TSINK(Original) - (E *

where

temperature

A suitable

to

a peak

of

Grade,

losses

the

value

be

the operating

T SINK(new)

given

with

R-C

snubber

value

(VRM) of

the

reverse

E injoules

loss

where

of

energy

frequency

is

the

the

frequency

network

0.67

may

MeaSurement

it

is

not

possible

may

be

per reverse

in

Hz

required maximum heat sink temperature and T SINK(original)

ratings.

is

connected

of

the

maximum

be

approximated by a

to

estimated

cycle

across
grade.

curves.

measure
as

in joules

voltage

follows.

(curves

i*

Rth)

the

diode

If

a different

pro

rata adjustment of the

and current

on p 16

to

restrict

grade

conditions,

).

the

transient

is

being used

maximum

or

for

reverse
or

V

RM

value

design

is

the

voltage

is

other than

obtained

purposes,

heat sink

waveform

0.67

from

the

NOTE

Reverse

This
care

must

(a)

forward

I

Recovery

device

a.c.

Loss

has a low

be

taken

to

ensure that:

coupled devices such

current.

by

Measurement

reverse recovered charge

as

current transformers are not affected

and

-7-

peak

reverse

RR

No.

RR

Issue

Page

Issue

recovery

current.

by

prior passage of high amplitude

When

: 94DR02/CXC974

1

: I

measuring the charge

(b) A suitable, polarised, clipping circuit

overloading the internal amplifiers

(c)

Measurement of reverse

2.2

ohms

connected across diode anode

by

recovery

must

be

connected

to

the input of the measuring

the relatively high amplitude forward current signal.

waveform

to

cathode.

should

be

carried out with an appropriate

oscilloscope

snubber

of

to

avoid

O.5uF,

Page

..

Page

.RR

RR

No.

Issue

No.

Issue

8
1

94DR02

1

10000

CJ)

-

Q)

....

Q)

0-

E

$

.....

c

Q)

....

....

:::J

(,,)

-e

ro

~

0

u..

CJ)

:::J

0

Q)

C

ro

.....

c

ro

.....

CJ)

C

1000

Forward

V

J

/

7

1500C/

V

/

/

I

.

..

Characteristic

V·'

.

:/

J

,

,

,

~

/

,/

.

.

~

,

I

250C

V'"

.

of

Limit

Device

':?'

~

V

/

150°C

A = 0.423553

B = 0.02954106

C =

1.

73642E-5

0::: 0.0140443

~

V

/~

'/

-

-

.-

-

100

0.6

II

)

0.8

I

25°C

J

I

.

1 1.2 1.4 1.6 1.8 2 2.2

Maximum Instantaneous Forward Voltage (Volts)

A::: 0.596789
8::: 0.04632052

:::

3.04052E-5

C
0=0.008459116

I

I

-

-

I