The M2408N#020-060 fast recovery diode consists of a 50mm diameter silicon slice (manufacturing
reference FFA), mounted in a cold weld caps ule. It has soft recovery characteristics and low values of
stored charge.
The information contained herein is confidential and is protected by Copyright. The information may not be
used or disclosed except with the written permis sion of and in the manner permitted by the propr ietors
Westcode Semiconductors Ltd.
In the interest of product im provement, W estcode res erves the right to change specif ications at any time
without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code
are not necessarily subject to the conditions and limits contained in this report.
First issue – Device T
Previous Datasheet M1825NC020-060 (June 2004) is now obsolete
uprated to 150°C. All ratings reflect this change.
JMAX
Rating Report. Types M2408N#020 to M2408N#060 Issue 2Page iJuly, 2004
Contents
Abstract......................................................................................................................................................... i
5.0 Reverse Recovery Loss ......................................................................................................................4
NOTE 1 - Reverse Recovery Loss by Measurement...............................................................................................................4
Maximum average forward current, T
Maximum average forward current. T
Maximum average forward. T
Nominal RMS forward current, T
D.C. forward current, T
Peak non-repetitive surge tp=10ms, VRM=60%V
Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)
2
t capacity for fusing tp=10ms, VRM=60%V
2
I
t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Operating temperature range-40 to +150°C
Storage temperature range-40 to +150°C
sink
=100°C, (note 3)857A
sink
=25°C, (note 4)3736A
=55°C, (note 2)2408A
sink
=100°C, (note 2)1497A
sink
=25°C, (note 2)4585A
sink
, (note 5)24.0kA
RRM
, (note 5)2.88×10
RRM
Data Sheet Issue:- 1
MAXIMUM
LIMITS
MAXIMUM
LIMITS
26.4kA
6
3.48×10
6
UNITS
UNITS
A2s
A2s
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 150°C T
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2Page 1 of 11July, 2004
initial.
j
below 25°C.
j
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Characteristics
PARAMETERMIN.TYP.MAX. TEST CONDITIONS (Note 1)UNITS
V
V
r
V
I
Q
Q
I
t
R
FM
T0
T
FRM
RRM
rr
ra
rm
rr
thJK
Maximum peak forward voltage
Threshold voltage--1.065V
Slope resistance--0.122
Maximum forward recovery voltage
Peak reverse current--50Rated V
Recovered charge-250-µC
Recovered charge, 50% Chord-160190µC
Reverse recovery current-170-A
Reverse recovery time, 50% Chord-1.9-
Thermal resistance, junction to heatsink
--1.45IFM=3000A
--1.70I
=4800A
FM
--5di/dt = 1000A/µs, 25°C
--8di/dt = 1000A/µs
RRM
I
=1000A, tp=1000µs, di/dt=200A/µs,
FM
V
=50V, 50% Chord.
r
--0.022 Double side cooled
--0.044 Single side cooled
V
mΩ
V
mA
µs
K/W
FMounting force19-26kN
-480-Housing option NC and NT
W
Weight
t
-360-Housing option ND
g
Notes:-
1) Unless otherwise indicated T
=150°C.
j
Notes on rupture rated packages.
This product is available with a non-rupture rated package.
For additional details on these products, please consult factory.
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2Page 2 of 11July, 2004
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage GradeV
02200300140
04400500260
06600700420
2.0 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:
where IF = instantaneous forward current.
4.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.
RRM
(V)
V
RSM
(V)
IDICIBAV⋅+⋅+⋅+=)ln(
FFFF
V
dc
R
(V)
(ii) Qrr is based on a 150µs integration time.
s
µ
150
I.e.
(iii)
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2Page 3 of 11July, 2004
=
FactorK=
dtiQ
.
rrrr
∫
0
t
1
t
2
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5.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:
)(
Where k = 0.2314 (°C/W)/s
E
= Area under reverse loss waveform per pulse in joules (W.s.)
= Rated frequency in Hz at the original sink temperature.
R
= d.c. thermal resistance (°C/W)
thJK
The total dissipation is now given by:
originaltot
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:
)()(
[]
fEWW
⋅+=
RfkETT⋅+⋅−=
thJKMAXJSINK
2
R
Where:Vr= Commutating source voltage
6.0 Snubber Components
When selecting snubber components, care m ust be taken not to us e excessively large values of snubber
capacitor or excessively sm all values of snubber re sistor. Such exc essive com ponent values may lead to
device damage due to the large resultant values of snubber dis charge current. If required, please cons ult
the factory for assistance.
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2Page 4 of 11July, 2004
V
⋅= 4
C
R = Snubber resistance
r
di
C
⋅
dt
S
= Snubber capacitance
S
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7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
4
2
00
2
I
=
AV
Where VT0 = 1.065V, rT = 0.122mΩ
2
rff
⋅⋅
T
WrffVV
⋅⋅⋅++−
AVTTT
ff = form factor (normally unity for fast diode applications)
∆
T
W
The forward characteristic I
(i) the well established V
((iiii))
=
AV
a set of constants A, B, C, and D forming the coefficients of the representative equation for V
R
th
TTT
−=∆
)(
7.2 Calculation of V
terms of I
given below:
F
KMAXj
using ABCD Coefficients
F
Vs VF, on page 6 is represented in two ways;
F
and rT tangent used for rating purposes and
T0
IDICIBAV⋅+⋅+⋅+=)ln(
FFFF
in
F
The constants, derived by curve fitting software, are given in this report for both hot and cold
characteristics. The resulting values for V
which is limited to that plotted.
A
B
C
D
8.0 Frequency Ratings
The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maxim um ratings
shown on page 1.
9.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
10.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties c an be included as
parallel to the first.
agree with the true device characteristic over a current range,
F
25°C Coefficients150°C Coefficients
0.41790240.103541587
0.097635570.098139
5.3723×10
3.45472×10
-5
-3
3.95463×10
8.071285×10
-5
-3
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2Page 5 of 11July, 2004
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Curves
Figure 1 – Forward characteristics of Limit deviceFigure 2 – Maximum forward recovery voltage
100
(V)
FRM
M2408N#020-060
Issue 2
150°C
(A)
FM
10000
M2408N#020-060
Issue 2
150°C25°C
1000
Instantaneous forward current - I
100
00.511.522.5
Maximum instantaneous forward voltage - V
Figure 3 - Recovered charge, Q
1000
M2408N#020-060
Issue 2
Tj = 150°C
10
Maximum forward recovery voltage - V
1
(V)
FM
rr
2000A
1500A
1000A
500A
Figure 4 - Recovered charge, Qra (50% chord)
100100010000
Rate of rise of forward current - di/dt (A/µs)
1000
M2408N#020-060
Issue 2
Tj = 150°C
25°C
2000A
1500A
1000A
500A
(µC)
rr
100
Total recovered charge - Q
10
1101001000
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2Page 6 of 11July, 2004
Commutation rate - di/dt (A/µs)
100
(µC)
ra
Recovered charge - Q
10
1
1101001000
Commutation rate - di/dt (A/µs)
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Figure 5 - Maximum reverse current, I
1000
M2408N#020-060
Issue 2
Tj = 150°C
100
(A)
rm
10
Reverse recovery current - I
1
1101001000
Commutation rate - di/dt (A/µs)
rm
2000A
1500A
1000A
500A
Figure 6 - Maximum recovery time, trr (50% chord)
10
M2408N#020-060
Issue 2
Tj = 150°C
(µs)
rr
Recovery time - t
1
1101001000
Commutation rate - di/dt (A/µs)
2000A
1500A
1000A
500A
Figure 7 – Reverse recovery energy per pulseFigure 8 - Sine wave energy per pulse
1000
M2408N#020-060
Issue 2
Tj = 150°C
=300V
V
r
(mJ)
r
100
Energy per pulse - E
10
1101001000
Commmutation rate - di/dt (A/µs)
2000A
1500A
1000A
500A
500A
1.00E+03
1.00E+02
1.00E+01
Energy per pulse (J)
1.00E+00
1.00E-01
M2408N#020-060
Issue 2
Tj = 150°C
6000A
4000A
3000A
2000A
1000A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2Page 7 of 11July, 2004
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Figure 9 - Sine wave frequency vs. pulse widthFigure 10 - Sine wave frequency vs. pulse width
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
1000A
2000A
3000A
4000A
6000A
M2408N#020-060
100% Duty Cycle
Issue 2
TK = 55°C
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
1000A
2000A
3000A
4000A
6000A
M2408N#020-060
100% Duty Cycle
Issue 2
TK = 85°C
1.00E+02
1.00E+01
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
1.00E+02
1.00E+01
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Figure 11 - Square wave energy per pulseFigure 12 - Square wave energy per pulse
1.00E+03
1.00E+02
1.00E+01
M2408N#020-060
Issue 2
di/dt =100A/µs
Tj = 150°C
1.00E+03
1.00E+02
1.00E+01
M2408N#020-060
Issue 2
di/dt =500A/µs
Tj = 150°C
6000A
4000A
3000A
2000A
1000A
2000A
1000A
4000A
3000A
6000A
Pulse width (s)
Energy per pulse (J)
1.00E+00
1.00E-01
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Energy per pulse (J)
1.00E+00
1.00E-01
1.00E-051.00E-041.00E-031.00E-02
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2Page 8 of 11July, 2004
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Figure 13 - Square wave frequency vs. pulse widthFigure 14 - Square wave frequency vs. pulse width
1.00E+05
1.00E+04
1000A
2000A
M2408N#020-060
Issue 2
di/dt =100A/µs
100% Duty Cycle
TK=55°C
1.00E+05
1.00E+04
1000A
2000A
M2408N#020-060
di/dt =500A/µs
100% Duty Cycle
Issue 2
TK = 55°C
3000A
4000A
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E-051.00E-041.00E-031.00E-02
6000A
Pulse width (s)
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
3000A
4000A
6000A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Figure 15 - Square wave frequency vs. pulse widthFigure 16 - Square wave frequency vs. pulse width
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
1000A
2000A
3000A
4000A
6000A
M2408N#020-060
Issue 2
di/dt =100A/µs
TK = 85°C
100% Duty Cycle
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
1000A
2000A
3000A
4000A
M2408N#020-060
Issue 2
di/dt =500A/µs
TK = 85°C
100% Duty Cycle
6000A
1.00E+02
1.00E+01
1.00E-051.00E-041.00E-031.00E-02
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2Page 9 of 11July, 2004
Pulse width (s)
1.00E+02
1.00E+01
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
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Figure 17 – Maximum surge and I2t ratings
100000
(A)
FSM
10000
Total peak half sine surge current - I
1000
I2t: V
I2t: VR=60% V
I
FSM
I
FSM
Tj (initial) = 150°C
10V
≤
RRM
: V
RRM
: VR=60% V
M2408N#020-060
Issue 2
13510151050100
Duration of surge (ms)Duration of surge (cycles @ 50Hz)
≤10V
RRM
RRM
1.00E+08
1.00E+07
1.00E+06
2
2
s)
t (A
Maximum I
Figure 18 – Transient thermal impedance
0.1
M2408N#020-060
Issue 2
0.01
0.001
Thermal impedance (K/W)
0.0001
0.00010.0010.010.1110100
SSC 0.044K/W
DSC 0.022K/W
Time (s)
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2Page 10 of 11July, 2004
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Outline Drawing & Ordering Information
100A325
Housing option NC and NT
ORDERING INFORMATION(Please quote 10 digit code as bel ow)
3540 Bassett Street
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except
with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves 7he right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter,3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to
the conditions and limits contained in this report.