Datasheet M2408N#020, M2408N#060 Datasheet (Westcode Semiconductors)

EVALUATION LABORATORY
Rating Report Origin
Issue 2
-
-
Date Total Pages
23 July, 2004
-
13
-
Fast Recovery Diode
Types M2408N#020 to M2408N#060
Old Type No.: SM02-06CXC504
Author EL Check/Approval QA Approval S & M Approval
N. A. Tarling

Abstract

The M2408N#020-060 fast recovery diode consists of a 50mm diameter silicon slice (manufacturing reference FFA), mounted in a cold weld caps ule. It has soft recovery characteristics and low values of stored charge.
Summary of changes to previous issue.
Issue 1 Issue 2 Addition of ‘D’ Housing option (21mm Clamp height)
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permis sion of and in the manner permitted by the propr ietors Westcode Semiconductors Ltd.
In the interest of product im provement, W estcode res erves the right to change specif ications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report.
First issue – Device T Previous Datasheet M1825NC020-060 (June 2004) is now obsolete
uprated to 150°C. All ratings reflect this change.
JMAX
Rating Report. Types M2408N#020 to M2408N#060 Issue 2 Page i July, 2004

Contents

Abstract......................................................................................................................................................... i
Contents.......................................................................................................................................................ii
Absolute Maximum Ratings....................................................................................................................... 1
Characteristics ............................................................................................................................................2
Notes on Ratings and Characteristics......................................................................................................3
1.0 Voltage Grade Table ........................................................................................................................... 3
2.0 De-rating Factor...................................................................................................................................3
3.0 ABCD Constants ................................................................................................................................. 3
4.0 Reverse recovery ratings.....................................................................................................................3
5.0 Reverse Recovery Loss ......................................................................................................................4
NOTE 1 - Reverse Recovery Loss by Measurement...............................................................................................................4
6.0 Snubber Components.......................................................................................................................... 4
7.0 Computer Modelling Parameters.........................................................................................................5
7.1 Device Dissipation Calculations.........................................................................................................................................5
7.2 Calculation of V
using ABCD Coefficients.......................................................................................................................5
F
8.0 Frequency Ratings...............................................................................................................................5
9.0 Square wave ratings............................................................................................................................ 5
10.0 Duty cycle lines.................................................................................................................................. 5
Curves..........................................................................................................................................................6
Figure 1 – Forward characteristics of Limit device.................................................................................... 6
Figure 2 – Maximum forward recovery voltage .........................................................................................6
Figure 3 - Recovered charge, Q Figure 4 - Recovered charge, Q Figure 5 - Maximum reverse current, I Figure 6 - Maximum recovery time, t
..............................................................................................................6
rr
(50% chord)......................................................................................... 6
ra
...................................................................................................7
rm
(50% chord)................................................................................... 7
rr
Figure 7 – Reverse recovery energy per pulse..........................................................................................7
Figure 8 - Sine wave energy per pulse...................................................................................................... 7
Figure 9 - Sine wave frequency vs. pulse width, 55°C heatsink................................................................ 8
Figure 10 - Sine wave frequency vs. pulse width, 85°C heatsink.............................................................. 8
Figure 11 - Square wave energy per pulse, 100A/µs................................................................................ 8
Figure 12 - Square wave energy per pulse, 500A/µs................................................................................ 8
Figure 13 - Square wave frequency vs. pulse width, 55°C heatsink, 100A/µs.......................................... 9
Figure 14 - Square wave frequency vs. pulse width, 55°C heatsink, 500A/µs.......................................... 9
Figure 15 - Square wave frequency vs. pulse width, 85°C heatsink, 100A/µs.......................................... 9
Figure 16 - Square wave frequency vs. pulse width, 85°C heatsink, 500A/µs.......................................... 9
Figure 17 – Maximum surge and I
2
t ratings.............................................................................................10
Figure 18 – Transient thermal impedance............................................................................................... 10
Outline Drawing & Ordering Information................................................................................................11
Rating Report. Types M2408N#020 to M2408N#060 Issue 2 Page ii July, 2004
Date:- 23 Jul, 2004
WESTCODE
An IXYS Company
Fast Recovery Diode
Type M2408N#020 to M2408N#060
Old Type No.: SM02-06CXC504

Absolute Maximum Ratings

VOLTAGE RATINGS
V
RRM
V
RSM
I
F(AV)M
I
F(AV)M
I
F(AV)M
I
F(RMS)
I
F(d.c.)
I
FSM
I
FSM2
I2tI I2t T
j op
T
stg
Repetitive peak reverse voltage, (note 1) 200-600 V Non-repetitive peak reverse voltage, (note 1) 300-700 V
OTHER RATINGS
Maximum average forward current, T Maximum average forward current. T Maximum average forward. T Nominal RMS forward current, T D.C. forward current, T Peak non-repetitive surge tp=10ms, VRM=60%V Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)
2
t capacity for fusing tp=10ms, VRM=60%V
2
I
t capacity for fusing tp=10ms, VRM≤10V, (note 5) Operating temperature range -40 to +150 °C Storage temperature range -40 to +150 °C
sink
=100°C, (note 3) 857 A
sink
=25°C, (note 4) 3736 A
=55°C, (note 2) 2408 A
sink
=100°C, (note 2) 1497 A
sink
=25°C, (note 2) 4585 A
sink
, (note 5) 24.0 kA
RRM
, (note 5) 2.88×10
RRM
Data Sheet Issue:- 1
MAXIMUM
LIMITS
MAXIMUM
LIMITS
26.4 kA
6
3.48×10
6
UNITS
UNITS
A2s A2s
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 150°C T
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2 Page 1 of 11 July, 2004
initial.
j
below 25°C.
j
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Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
V
V r
V
I Q Q I t
R
FM
T0
T
FRM
RRM
rr
ra
rm
rr
thJK
Maximum peak forward voltage
Threshold voltage - - 1.065 V Slope resistance - - 0.122
Maximum forward recovery voltage
Peak reverse current - - 50 Rated V Recovered charge - 250 - µC Recovered charge, 50% Chord - 160 190 µC Reverse recovery current - 170 - A Reverse recovery time, 50% Chord - 1.9 -
Thermal resistance, junction to heatsink
- - 1.45 IFM=3000A
- - 1.70 I
=4800A
FM
- - 5 di/dt = 1000A/µs, 25°C
- - 8 di/dt = 1000A/µs
RRM
I
=1000A, tp=1000µs, di/dt=200A/µs,
FM
V
=50V, 50% Chord.
r
- - 0.022 Double side cooled
- - 0.044 Single side cooled
V
m
V
mA
µs
K/W
F Mounting force 19 - 26 kN
- 480 - Housing option NC and NT
W
Weight
t
- 360 - Housing option ND
g
Notes:-
1) Unless otherwise indicated T
=150°C.
j
Notes on rupture rated packages. This product is available with a non-rupture rated package. For additional details on these products, please consult factory.
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2 Page 2 of 11 July, 2004
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Notes on Ratings and Characteristics

1.0 Voltage Grade Table Voltage Grade V

02 200 300 140 04 400 500 260 06 600 700 420

2.0 De-rating Factor

A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.

3.0 ABCD Constants

These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of the expression for the forward characteristic given below:
where IF = instantaneous forward current.

4.0 Reverse recovery ratings

(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.
RRM
(V)
V
RSM
(V)
IDICIBAV +++= )ln(
FFFF
V
dc
R
(V)
(ii) Qrr is based on a 150µs integration time.
s
µ
150
I.e.
(iii)
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2 Page 3 of 11 July, 2004
=
FactorK =
dtiQ
.
rrrr
0
t
1
t
2
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5.0 Reverse Recovery Loss

The following procedure is recommended for use where it is necessary to include reverse recovery loss. From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated from:
)(
Where k = 0.2314 (°C/W)/s
E
= Area under reverse loss waveform per pulse in joules (W.s.) = Rated frequency in Hz at the original sink temperature.
R
= d.c. thermal resistance (°C/W)
thJK
The total dissipation is now given by:
originaltot

NOTE 1 - Reverse Recovery Loss by Measurement

This device has a low reverse recovered charge and peak reverse recovery current. When measuring the charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below:
)()(
[]
fEWW
+=
RfkETT +=
thJKMAXJSINK
2
R
Where: Vr= Commutating source voltage

6.0 Snubber Components When selecting snubber components, care m ust be taken not to us e excessively large values of snubber

capacitor or excessively sm all values of snubber re sistor. Such exc essive com ponent values may lead to device damage due to the large resultant values of snubber dis charge current. If required, please cons ult the factory for assistance.
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2 Page 4 of 11 July, 2004
V
= 4
C
R = Snubber resistance
r
di
C
dt
S
= Snubber capacitance
S
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7.0 Computer Modelling Parameters

7.1 Device Dissipation Calculations

4
2
00
2
I
=
AV
Where VT0 = 1.065V, rT = 0.122m
2
rff
T
WrffVV
++
AVTTT
ff = form factor (normally unity for fast diode applications)
T
W
The forward characteristic I (i) the well established V
((iiii))
=
AV
a set of constants A, B, C, and D forming the coefficients of the representative equation for V
R
th
TTT
=
)(
7.2 Calculation of V
terms of I
given below:
F
KMAXj
using ABCD Coefficients
F
Vs VF, on page 6 is represented in two ways;
F
and rT tangent used for rating purposes and
T0
IDICIBAV +++= )ln(
FFFF
in
F
The constants, derived by curve fitting software, are given in this report for both hot and cold characteristics. The resulting values for V which is limited to that plotted.
A B C D

8.0 Frequency Ratings The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maxim um ratings

shown on page 1.

9.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

10.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties c an be included as

parallel to the first.
agree with the true device characteristic over a current range,
F
25°C Coefficients 150°C Coefficients
0.4179024 0.103541587
0.09763557 0.098139
5.3723×10
3.45472×10
-5
-3
3.95463×10
8.071285×10
-5
-3
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2 Page 5 of 11 July, 2004
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Curves

Figure 1 – Forward characteristics of Limit device Figure 2 – Maximum forward recovery voltage

100
(V)
FRM
M2408N#020-060
Issue 2
150°C
(A)
FM
10000
M2408N#020-060
Issue 2
150°C 25°C
1000
Instantaneous forward current - I
100
00.511.522.5
Maximum instantaneous forward voltage - V
Figure 3 - Recovered charge, Q
1000
M2408N#020-060
Issue 2
Tj = 150°C
10
Maximum forward recovery voltage - V
1
(V)
FM
rr
2000A 1500A
1000A 500A

Figure 4 - Recovered charge, Qra (50% chord)

100 1000 10000
Rate of rise of forward current - di/dt (A/µs)
1000
M2408N#020-060
Issue 2
Tj = 150°C
25°C
2000A 1500A 1000A 500A
(µC)
rr
100
Total recovered charge - Q
10
1 10 100 1000
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2 Page 6 of 11 July, 2004
Commutation rate - di/dt (A/µs)
100
(µC)
ra
Recovered charge - Q
10
1
1 10 100 1000
Commutation rate - di/dt (A/µs)
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Figure 5 - Maximum reverse current, I
1000
M2408N#020-060
Issue 2
Tj = 150°C
100
(A)
rm
10
Reverse recovery current - I
1
1 10 100 1000
Commutation rate - di/dt (A/µs)
rm
2000A 1500A 1000A 500A

Figure 6 - Maximum recovery time, trr (50% chord)

10
M2408N#020-060
Issue 2
Tj = 150°C
(µs)
rr
Recovery time - t
1
1 10 100 1000
Commutation rate - di/dt (A/µs)
2000A 1500A 1000A 500A

Figure 7 – Reverse recovery energy per pulse Figure 8 - Sine wave energy per pulse

1000
M2408N#020-060
Issue 2
Tj = 150°C
=300V
V
r
(mJ)
r
100
Energy per pulse - E
10
1 10 100 1000
Commmutation rate - di/dt (A/µs)
2000A 1500A 1000A
500A
500A
1.00E+03
1.00E+02
1.00E+01
Energy per pulse (J)
1.00E+00
1.00E-01
M2408N#020-060
Issue 2
Tj = 150°C
6000A 4000A 3000A 2000A 1000A
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2 Page 7 of 11 July, 2004
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Figure 9 - Sine wave frequency vs. pulse width Figure 10 - Sine wave frequency vs. pulse width

1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
1000A
2000A
3000A
4000A
6000A
M2408N#020-060
100% Duty Cycle
Issue 2
TK = 55°C
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
1000A
2000A
3000A
4000A
6000A
M2408N#020-060
100% Duty Cycle
Issue 2
TK = 85°C
1.00E+02
1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
1.00E+02
1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)

Figure 11 - Square wave energy per pulse Figure 12 - Square wave energy per pulse

1.00E+03
1.00E+02
1.00E+01
M2408N#020-060
Issue 2
di/dt =100A/µs Tj = 150°C
1.00E+03
1.00E+02
1.00E+01
M2408N#020-060
Issue 2 di/dt =500A/µs Tj = 150°C
6000A 4000A 3000A 2000A 1000A
2000A
1000A
4000A
3000A
6000A
Pulse width (s)
Energy per pulse (J)
1.00E+00
1.00E-01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Energy per pulse (J)
1.00E+00
1.00E-01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2 Page 8 of 11 July, 2004
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Figure 13 - Square wave frequency vs. pulse width Figure 14 - Square wave frequency vs. pulse width

1.00E+05
1.00E+04
1000A
2000A
M2408N#020-060
Issue 2
di/dt =100A/µs
100% Duty Cycle
TK=55°C
1.00E+05
1.00E+04
1000A
2000A
M2408N#020-060
di/dt =500A/µs
100% Duty Cycle
Issue 2
TK = 55°C
3000A
4000A
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
6000A
Pulse width (s)
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
3000A
4000A
6000A
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)

Figure 15 - Square wave frequency vs. pulse width Figure 16 - Square wave frequency vs. pulse width

1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
1000A
2000A
3000A
4000A
6000A
M2408N#020-060
Issue 2
di/dt =100A/µs
TK = 85°C
100% Duty Cycle
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
1000A
2000A
3000A
4000A
M2408N#020-060
Issue 2
di/dt =500A/µs
TK = 85°C
100% Duty Cycle
6000A
1.00E+02
1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2 Page 9 of 11 July, 2004
Pulse width (s)
1.00E+02
1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
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Figure 17 – Maximum surge and I2t ratings

100000
(A)
FSM
10000
Total peak half sine surge current - I
1000
I2t: V
I2t: VR=60% V
I
FSM
I
FSM
Tj (initial) = 150°C
10V
RRM
: V
RRM
: VR=60% V
M2408N#020-060
Issue 2
1 35101 510 50100
Duration of surge (ms) Duration of surge (cycles @ 50Hz)
10V
RRM
RRM
1.00E+08
1.00E+07
1.00E+06
2
2
s) t (A
Maximum I

Figure 18 – Transient thermal impedance

0.1
M2408N#020-060
Issue 2
0.01
0.001
Thermal impedance (K/W)
0.0001
0.0001 0.001 0.01 0.1 1 10 100
SSC 0.044K/W
DSC 0.022K/W
Time (s)
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2 Page 10 of 11 July, 2004
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Outline Drawing & Ordering Information

100A325
Housing option NC and NT
ORDERING INFORMATION (Please quote 10 digit code as bel ow)
M2408 N#
Fixed
Type Code
Order code: M2408ND040 – 400V V
IXYS Semiconductor GmbH
Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: marcom@ixys.de
IXYS Corporation
3540 Bassett Street Santa Clara CA 95054 USA Tel: +1 (408) 982 0700 Fax: +1 (408) 496 0670 E-mail: sales@ixys.net
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves 7he right to change specifications at any time without prior notice. Devices with a suffix code (2-letter,3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to
the conditions and limits contained in this report.
NC = 27.7mm Clamp hei ght capsule, ND = 21mm Cl amp height capsule,
NT = 27.7mm Clamp hei ght rupture rated capsule
, 21mm clamp height capsule.
RRM
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Housing option ND



Voltage code
/100
V
RRM
02-06
Westcode Semiconductors Ltd
Langley Park Way, Langl ey Park,
Chippenham, Wi l tshire SN15 1GE.
E-mail: WSL.sales@westcode.com
Westcode Semiconductors Inc
Long Beach CA 90807 USA
E-mail: WSI.sales@westcode.com
0
Fixed code
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
3270 Cherry Avenue
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
© Westcode Semiconductors Ltd.
Data Sheet. Types M2408N#020 to M2408N#060 Issue 2 Page 11 of 11 July, 2004
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Data Sheet. Types M2408N#020 to M2408N#060 Issue 2 Page 12 of 11 July, 2004
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