Westcode Semiconductors M2322Z#300, M2322Z#400 Data Sheet
Date:- 28 Nov, 2003
WESTCODE
An IXYS Company
Fast Recovery Diode
Type M2322Z#300 to M2322Z#400
Old Type No.: SM30-40CXC384
Absolute Maximum Ratings
VOLTAGE RATINGS
V
RRM
V
RSM
I
F(AV)M
I
F(AV)M
I
F(AV)M
I
F(RMS)
I
F(d.c.)
I
FSM
I
FSM2
I2tI
I2t
T
j op
T
stg
Repetitive peak reverse voltage, (note 1) 3000-4000 V
Non-repetitive peak reverse voltage, (note 1) 3100-4100 V
OTHER RATINGS
Maximum average forward current, T
Maximum average forward current. T
Maximum average forward. T
Nominal RMS forward current, T
D.C. forward current, T
Peak non-repetitive surge tp=10ms, VRM=60% V
Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)
2
t capacity for fusing tp=10ms, VRM=60% V
I2t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
sink
=100°C, (note 3) 585 A
sink
=25°C, (note 4) 3819 A
=55°C, (note 2) 2322 A
sink
=100°C, (note 2) 1053 A
sink
=25°C, (note 2) 4690 A
sink
, (note 5) 23.0 kA
RRM
, (note 5) 2.64×10
RRM
Data Sheet Issue:- 1
MAXIMUM
LIMITS
MAXIMUM
LIMITS
25.3 kA
6
3.19×10
6
UNITS
UNITS
A2s
A2s
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
Data Sheet. Types M2322Z#300 to M2322Z#400 Issue 1 Page 1 of 11 November, 2003
initial.
j
below 25°C.
j
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WESTCODE An IXYS Company Fast Recovery Diode Types M2322Z#300-400
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Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
V
V
r
V
I
Q
Q
I
t
R
FM
T0
T
FRM
RRM
rr
ra
rm
rr
thJK
Maximum peak forward voltage
Threshold voltage - - 1.67 V
Slope resistance - - 0.186
Maximum forward recovery voltage
Peak reverse current
Recovered charge - 3200 - µC
Recovered charge, 50% Chord - 1450 2000 µC
Reverse recovery current - 450 - A
Reverse recovery time, 50% Chord - 6.5 -
Thermal resistance, junction to heatsink
- - 2.04 IFM=2000A
--2.6I
=4650A
FM
mΩ
- - 40 di/dt = 1000A/µs, Tj=25°C V
- - 80 di/dt = 1000A/µs V
- - 10 Rated V
- - 150 Rated V
I
=1000A, tp=200µs, di/dt=150A/µs,
FM
V
=50V, 50% Chord.
r
- - 0.011 Double side cooled
RRM,Tj
RRM
=25°C
mA
K/W
- - 0.022 Single side cooled
V
µs
F Mounting force 37 - 47 kN
W
Weight
t
- 1.7 - Outline option ZC
- 1.2 - Outline option ZD
kg
Notes:-
1) Unless otherwise indicated T
=125°C.
j
Data Sheet. Types M2322Z#300 to M2322Z#400 Issue 1 Page 2 of 11 November, 2003
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WESTCODE An IXYS Company Fast Recovery Diode Types M2322Z#300-400
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade V
30 3000 3100 1750
32 3200 3300 1800
34 3400 3500 1850
36 3600 3700 1900
38 3800 3900 1950
40 4000 4100 2000
2.0 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:
where IF = instantaneous forward current.
4.0 Reverse recovery ratings
RRM
(V)
V
RSM
(V)
IDICIBAV ⋅+⋅+⋅+= )ln(
FFFF
V
dc
R
(V)
(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.
(ii) Qrr is based on a 150µs integration time.
s
µ
150
I.e.
(iii)
=
FactorK =
dtiQ
.
rrrr
∫
0
t
1
t
2
Data Sheet. Types M2322Z#300 to M2322Z#400 Issue 1 Page 3 of 11 November, 2003
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f
)
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5.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:
[]
Where k = 0.2314 (°C/W)/s
E
= Area under reverse loss waveform per pulse in joules (W.s.)
= Rated frequency in Hz at the original sink temperature.
R
= d.c. thermal resistance (°C/W)
th(JK
The total dissipation is now given by:
fEWW
originaltot
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
)()(
⋅+=
RfkETT ⋅+⋅−=
)()( JKthMAXjSINK
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:
2
R
Where: Vr= Commutating source voltage
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
V
⋅= 4
C
R = Snubber resistance
r
di
C
⋅
dt
S
= Snubber capacitance
S
Data Sheet. Types M2322Z#300 to M2322Z#400 Issue 1 Page 4 of 11 November, 2003
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