Westcode Semiconductors M2273V#300, M2273V#360 Data Sheet

Fast Recovery Diode
Types M2273V#300 to M2273V#360

Absolute Maximum Ratings

Date:- 26 Aug, 2003
Data Sheet Issue:- 1
VOLTAGE RATINGS
V
RRM
V
RSM
I
F(AV)M
I
F(AV)M
I
F(AV)M
I
F(RMS)M
I
F(d.c.)
I
FSM
I
FSM2
I2tI
I2t
T
j op
T
stg
Notes:-
1)
2)
3)
4)
5)
Repetitive peak reverse voltage, (note 1) 3000-3600 V
Non-repetitive peak reverse voltage, (note 1) 3100-3700 V
OTHER RATINGS
Maximum mean forward current, T
Maximum mean forward current. T
Maximum mean forward current. T
Maximum RMS forward current, T
D.C. forward current, T
Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, VRM=0.6V
I2t capacity for fusing tp=10ms, V
(note 6)
=55°C, (note 2) 2273 A
sink
=100°C, (note 2) 1479 A
sink
=100°C, (note 3) 881 A
sink
=25°C, (note 2) 4265 A
sink
=25°C, (note 4) 3663 A
sink
RRM
10V, (note 5)
RM
, (note 5) 3.92×10
RRM
10V, (note 5)
RM
Operating temperature range -40 to +150 °C
Storage temperature range -40 to +150 °C
De-rating factor of 0.13% per °C is applicable for Tj below 25°C. Double side cooled, single phase; 50Hz, 180° half-sinewave. Single side cooled, single phase; 50Hz, 180° half-sinewave. Double side cooled. Half-sinewave, 150°C Tj initial.
MAXIMUM
MAXIMUM
UNITS
UNITS
, (note 5) 28.0 kA
30.8 kA
4.74×10
6
6
A2s
A2s
Data Sheet. Types M2273V#300 to M2273V#360 Issue 1 Page 1 of 11 August, 2003
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Characteristics

Fast Recovery Diode Types M2273V#300 to M2273V#360
UNITS
V
m
V
mA
µs
K/W
V
V
r
V
I
Q
Q
I
t
R
FM
T0
T
FRM
RRM
rr
ra
rm
rr
thJK
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
Maximum peak forward voltage
- - 2.90 IFM=6800A
- - 2.40 I
=4550A
FM
(Note 1)
Threshold voltage - - 1.239 V
Slope resistance - - 0.244
Maximum forward recovery voltage
- - 40 di/dt = 1000A/µs, Tj=25°C
- - 95 di/dt = 1000A/µs
Peak reverse current - - 150 Rated V
RRM
Reverse Recovery Charge - 2500 - µC
Recovered charge, 50% Chord - 1300 1500 µC
Reverse Recovery Current - 300 - A
I
=1000A, tp=1000µs, di/dt=60A/µs,
FM
V
=50V, 50% Chord.
r
Reverse recovery time, 50% Chord - 8.5 -
Thermal resistance, junction to heatsink
- - 0.016 Double side cooled
- - 0.032 Single side cooled
F Mounting force 27 - 34 kN
W
Weight (note 2)
t
- 1000 - Outline option VC
- 800 - Outline option VF
g
Notes:-
1) Unless otherwise indicated T
=150°C.
j
2) The outline code is denoted by a ‘#’ in the part number. See ordering information for details of outline codes.
Data Sheet. Types M2273V#300 to M2273V#360 Issue 1 Page 2 of 11 August, 2003
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Notes on Ratings and Characteristics

1.0 Voltage Grade Table

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Fast Recovery Diode Types M2273V#300 to M2273V#360
V
Voltage Grade
30 3000 3100 1700 32 3200 3300 1800 34 3400 3500 1850 36 3600 3600 1900

2.0 De-rating Factor

A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.

3.0 ABCD Constants

These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of the expression for the forward characteristic given below:
RRM
(V)
)ln(
where IF = instantaneous forward current.

4.0 Reverse recovery ratings

(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.
V
RSM
(V)
V
dc
R
(V)
IDICIBAV
+++=
FFFF
(ii) Qrr is based on a 150µs integration time.
s
µ
150
I.e.
(iii)
Data Sheet. Types M2273V#300 to M2273V#360 Issue 1 Page 3 of 11 August, 2003
=
FactorK
dtiQ
.
rrrr
0
t
1
=
t
2
WESTCODE
)
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5.0 Reverse Recovery Loss

The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated from:
Where k = 0.2314 (°C/W)/s
R
th(J-Hs
The total dissipation is now given by:
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RfkETT
)(
E
= Area under reverse loss waveform per pulse in joules (W.s.)
f
= Rated frequency in Hz at the original sink temperature. = d.c. thermal resistance (°C/W)
originaltot
[]
)()(
+=
+=
thJKMAXjSINK
fEWW
Fast Recovery Diode Types M2273V#300 to M2273V#360

NOTE 1 - Reverse Recovery Loss by Measurement

This device has a low reverse recovered charge and peak reverse recovery current. When measuring the charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below:
2
R
Where: Vr= Commutating source voltage

6.0 Snubber Components

4
V
=
C
R = Snubber resistance
r
di
C
dt
S
= Snubber capacitance
S
When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance.
Data Sheet. Types M2273V#300 to M2273V#360 Issue 1 Page 4 of 11 August, 2003
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