Westcode Semiconductors M1494NC160, M1494NC250 Data Sheet

Soft Recovery Diode

The data sheet

M1494NC160

on

the subsequent pages

to M1494NC250

of

this document

is

a scanned copy of existing

data for this product.

(Rating Report 82NR8

Issue 3)

This data reflects the old part number for this product which is: SW16-25CXC924. This part

number must

NOT be used for ordering purposes - please use the ordering particulars

detailed below.

Please

use the following link to view an up to date outline drawing for this device

Outline W5

Where any information on the product matrix page differs from that

in

the following data,

the product matrix must be considered correct

An

electronic data sheet for this product is presently in preparation.

For further information on this product,

please contact your local ASM or distributor.

Alternatively, please contact Westcode as detailed below.

Ordering Particulars

M1494 NC

Fixed Type Code Fixed

Typical Order Code: M1494NC200, 27.7mm clamp height,

IXYS Semiconductor GmbH

Edisonstra~e

D-68623 Lampertheim

Tel:

[phone]
Fax: [phone]
E-mail:

IXYS Corporation

3540 Bassett Street
Santa
Tel:

+1

Fax:
E-mail: [e-mail]

The

information contained herein

permission

In

the interest

Devices
and

limits contained in this report.

15

[e-mail]

Clara CA 95054 USA

[phone]

+1

[phone]

of

and

in the

manner

of

product improvement,

with a suffix code

(2-le"er,

is

confidential

permitted

Westcode

3-letter

and

is

by

the proprietors

reserves the right

or

letter/digitl1etter combination) added to

Outline Code V

E E

An

protected

Westcode

L~nXYS

by

Company

www.westcode.com

www.ixys.com

Copyright.

The

information

Semiconductors

to

change

Ltd.

specifications

their

at

generic

may

not

any time

code

be

used

or

without

prior notice.

are

not

necessarily subject to the

••

Voltage code

/100

DRM

16-25

2000VV

disdosed

except

with

RRM

the

conditions

0

Fixed Code

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

E-mail: [e-mail]

E-mail:

written

Tel: [phone]

Fax: +44

Westcode Semiconductors Inc

Long Beach CA

[e-mail]

(0)1249 659448

3270 Cherry Avenue

Tel:

Fax:

©

Westcode

90807

+1

[phone]

+1

[phone]

Semiconductors

USA

Ltd.

Issue :- 1

QUALITY

Rating Report No: 81NR8 issue

QEL.

Written by:

manufacturing reference FFJFXC.

Double Side Cooled

PAR94076

1

b.

Checked:

The

CXC924

This

issue supersedes rating report 82NR8 issue 2. dated 15th January. 1987.

Grades ) A

}

of

) to this de>ice

0.13%

,oltage

per Celsius

for

l

(Note 1 &

50

HL, 180"

AND

:;

EVALUATION

LABORATORY

Date:

Appro\cd:/

sl~ries

oft1sl

mounted

Ieemcry

in

diodes is based

a cold weld capsule.

on

a diffused 50

factor

is

applicable

Ti below

:2

half

=

55'(.

25T

page 4) : 1600 -

sinewa\e;

lOOT

9th

June. 1995

30

mm

diameter

•

16

- 25

• 1700 - 2600 V

1495 A. 705 A

silkon

2500

sEce.

V

Single Side Cooled = lOOT t02 A

TITS

2ye

: t'"" tOms

: t

•.

'" lOms

: !

"',

Wms: TJ (initial) 125"C: V

-,

I"'t

: t =

Operating

: Non-operating

3IllS:

) Double

half

sincwavc: TJ (initial) 125'C

half

T

(initial) 115"C:

J

Range

T

(initial)

J

\i

side cooled

s~

RM

::0

Rtv1

125C

lOY

lOY

=

06V

510V

RRMi

MAX)

2984 A

:

250(}

.19.6

: 21.56

:

2.32"

:

-.l-O

. -

..

HI

A

kA

kA

To 125

To

.L

l50

"('

''c:

:

RR.
RR

No.
Issue

82NR;;;;CXC92-1

Issue : 1

-2-

i\1a'\imum ,alues unless olil.::misc ,(aied)

:

U5V

r

s

: 0.265

mn

A

B :

TJ"

25C

C

=25T

D

Tr'"

25'C

A .

Constant

B In(iF)

C

IF

D .

vi

!

Double

Vfr . at dlld!

Reverse

recovery at IFM

-1500

A

side

cooled

side

cooled

0=

WOO

Al}lS

JOOI)

diR/dt 60N}ts: V

Valid

Valid

!

A: lp =

.=

HM

range

rang.::

<l>

a.c.

50 V

WOO

100 A

lOO

A.

d..C.

resistiYe

ftS

1.0

to

and

load

8000 A

700n

A

6J)59912

-I.

9.-192610E-5
1

-5.-185326E-2

1.612135E-l

E-1

837078E-2

1230-iOE-2

227-10-i-iE-i

2.917716E--I

2~q

V

0.022

KfW

00-1-1

KIW

85

rnA

uv

Orm.

(total

ORA

tn

(50'%,

lRM

Ivtounting

Ouiline

JEDEC

area)

chord)

chord)

Force

Dwwing

Outline

No.

NOTE: All ci1araelcristi;:s arc 3t

Tlm::x opt-Tating

unle,s

Slated otherwise.

378

175 A

'19-26kN

(1900 - 2600

:

100A2-19

DO-200A(-

kgJ)

:

82'N'R8fCXC92+

3

o

-

,)

...

Ratings and Characteristics
Contents

Grade Table
Extension
Changes

of

to

82NRS issue 2

(a) Square-waye Ratings

(b)

Energy per Pulse Characteristics

ABCD

Cd)

Reyerse

(a)

Determination by Measurement

Grades

Constants

Recovery

Determination without Measurement

Measurement

Limit On-state Characteristics
Transient Thermal Impedance
Surge Rating
Forward Recmcry Voltage

Recmered Charge

50%,

Chord

Total Recovered Charge

Peak

RC\"Cfse

Recovered Current

Maximum Recovery Time 50% Chord
Reverse Recoycry Energy per Pulse
Square Wayc Frequency Rating
Square Waye Frequency Rating
Square

Waw

Frequency Rating 55"C Sink 500

Square

Waye

frequency Rating
Energy per Pulse 100
Energy per Pulse 500

Al~lS

A/j.l.S

SSC Sink

~i5"C

Sink

SST

Siuk

Sinc \Vayc Frequency Ralings 55'(' Sink

Sine Waye

Frequency Ratings 85"('

SilLIi.

Sine Wave Energy per Pulse

Outline Drawings

tRR

iOO

100

500

Alf1.S
Alp's

Alj.l.S

Al~tS

L2

-I

-I

5

5

5

5

6

6

7

8.9JCUl

!2

J3

.le!-

IS

16

17

18

19

20

21

22

23

2-1

25

26

27

2S

29

30

-

-+-

RR

No. : 8:2NR8!CXC924

RwR.

Issue

Issue : 1

3

Vol

Class

16

18

20 2,000 2,100

22 2,200

24

25

1.

This Report is applicable to higher or lower

2.

A blocking \oHage derating factor ofO.

I

Page

2.

Page

3,

Pages 5,6. ReWlittcn with addition

8.9.10. J

12.

Page

Page

13.

P;lgc

1·1.

PagelS.
Page

16.

Page

17.

Page

1.8

Page

.19.

Page 20.

Pages 21-29 Replace issue 2 pages 13·21.

ABCD coefficients. V

Contents page rewrit1en

Notes

I.

Computer modelling section added.

ABCD coefficients added replacing issue 2

Rlh

curve replaces issne:2 page

Same

as

Formud

Q

:\

cun'es extended to

R

Q

curve added.

RR

IR\!

cune

lRR

curve added.

Same as issue 2 page

IF

"H;;HI~;!;U.

1 and 2 added.

issue 2 page

recovery

added. Replaces issue 2 page

cun

L3~o

FR'

QrUlUotal

9.
e 3dded.

-1-S0NW;

12

V V

1,600
1,800

2,400 2,500
2,500 2,600

when supply has been

per deg. Celsius is applicable

area).

7.

8.

added.

issue 2 page

11

'so

factor cun·e.

to

RthO_!!S)

10.

lhis

.

IRRM

deYlee

1,700
1,900

2,300

by

Sales/Production.

for below 25"('.

- 5 -

R.R. No. : 82NR8/CXC92+
R.R. Issue j

Issue I

This diode series

controlled reverse recovery characteristics with

These

These curves enable rapid estimation

frequency ratings.

Let: Ep be the

in Hertz. Let R rhJ-HS

(''''nnri~(>"

1.3.st

recovery

for linear rates

:per

pulse for a current. and pulse width, in joules. Let f be tbe repetition rate.

be

the state d.c. thcrmal resistance (junction to heat sink).

deyices with

good

"K" factors.

of

device dissipation

Ep*/

TWNK

These constants (applicable only over current range

the expression for the forward characteristic given below:

~

TI(A1A;t) - (E p * / *

RthJ-H5)

aU

diffused silicon slices. All these diodes have

and

are particularly suitable for use in free-wheel

of

rise

of

fomard

to

be obtaincd for conditions not covered by the

of

V F characteristic OIl page 12) are the coefficients

current

of

100

and

SOO

of

I/~f

= A +

B.

In

(Jf) +

C.

if

+

D.

fif : where iF = instantaneous forward current.

-6-

, 82NR8!CXC924

Isslle

Issue

(ii) ORR is based

i,c,

(iii)

K I'actor =

The

Prom

\\a\eforms

present during

this waveform be E joules

recovery,

QRR

It

on

= f

of

TSINK(new)

where k =

(J,,)12

E'"

Area under

f = Rated in Hi

RthJ-HS

reverse

""

dx.

thcrmal resistance (KJW)

a 150

,u.s

dt

itm.

t 0

Ll

t2

is

recommended

recowry

an

per

currcnl obtained from a high frequency ':ihunt (sec Note I)

instantaneous re\'erse rcco\cry

A new

time

for

usc

sink

temperature

\\ bere it

loss

is

necessary

wan:form must

can

then be

TS1NK(ori?,inal) - R th(J--!l.S)

loss

w3yeformper

at

the original sink temperatufe,

pulse

in

joules

(W.$.)

to

include reyerse fceon::r)

be

constructed. Let the area

e\aluated

from:

loss.

and

reverse voltage

under

The

totIiI dissipation is now by TV{tOl)

In circumstances where it is not possible to

the additional losses E

Let E be the value ofenerg:- per reverse eycle

Let t be the

then

TSINK(new)

where

T~lNK(ne';j)

temperature with the frequency ratings.

A suitable R-C snubber network is conllected across the diode to restrict the transient fC\Cfse

10

a peak, Yalue

of

Gradc_

the

rc\crse

curves,

injoulcs

operating

may be estimated

frequent)· in

= TSINK(origil7af) -

is the required

(V

\1)

of

0.67

of

the

R

loss may be approximated by a

maximnm

Hz

maximum

rV(

original) + E * f

measure

as

in

(E

grade,

\'oHage and current conditions,

fol!O\\s.

joules (curycs on p 20

*

i*

Rth)

heat

SlIlh

temperature

If

a different grade

pro

rata adjustment

).

and

T'VNK(origil1a!) is the heal

IS

being used

of

the maxinmlH \ J!lle obtained from the

Of

for design purposes.

\o!wge

or

V

is other [ban 0.67

RM

Slflk

wmcfonn

NOTE I

-7-

RR
RR.

Page

No.

Issue

Issue

:

82:h.'R8/CXC924

: 3

: 1

Reyerse

care

forward

Recoyery

dC\ice

This

must

(a)

has a

be taken to ensure that:

a.c.

coupled

current.

(b) A

suitable,

Loss

bv Measurement

low

reverse

dC\iccs

such as current transformers are

polarised. clipping circuit

oycrloading the internal amplifiers

(c)

10

ohms

Measurement

connected

of

reverse

recovery

across diode anode

recovered

by

the

waveform

to

charge

must

relatively

cathode.

and

peak

reverse

not

be

connected

lligh amplitude

slrould

be carried

recovery

affected

to

the input of

forward

out

by

current

prior

When

passage

the

mC<lSUring

measuring the charge

of high amplitude

oscilloscope

current signal.

with an appropriate snubber of

to avoid

O.22J.tF,

] . Device Dissipation Calculations

-8-

Computer Modelling Parameters

RR

RR.

Page

No.

: 82NR8fCXC924

Issue:

Issue

3

: 1

Where

I . _

Vo=

L15V, 's=0.265 mn.

W

Rth

If

AV=-

AT

R,h

= Supplementary thermal impedance, see table

=

Form

Conduction

Side

-V!J+jv~-4~D2*rs*(-WAV)

AV

- 2*.!f*rs

t1.T

= tJMax -

factor, see table

Angle

Cooled

30"

0.0353 0.0313 0.0288

0.0586 0.0542 0.0516 0.0498

0.0313 0.0272 0.0253

0.0540

tHS

below.

60"

0.0496

below.

90" 120"

0.0271

0.02414

0.0478

0.0467

0

180

0.0251

0.0478

0.0220

0.0440

d.c.

0.0220

0.0440

Form

30" 60"

3.46 2.45 2 1.73

3.98 2.78 2.22 1.88

90"

120°

0

180

1.41 1

1.57

d.c.

-9-

R.R.

No.

R.R. Issue

Issue

. 82N'R8ICXC924

3

The OIl-state characteristic

tangent used for purposes

""luaH\.'"for V

The constants. derived by curve

where possible. The resnlting values for Vf agree with the tme device characteristic

limited to iliat plolted,

If

"s

VI'

OIl

and

(d) a set

in terms below:

f

f.T

= A + B *

f

125°C

A

B

C

D

Coefficients

-5.485326E-2

1.612135 E-1

2.274044 E-4

2.917716 E-4

page 1 0 is in two ways; (i) the well established

of

constants

In

(II) C * (ft) + D *

A.

B.

C, D. fonning the co-efficients

Jif

in

this report for

25()C

both

Coefiicients

A

B

C

D

)

Where p = 1

to'

n.

!l

is the number

t = Duration

r

= Thermal resistance al time

t

rp

= Amplitude

fp"" Time Constant

of

heating pulse

of

P;h term.

of

P1h

of

terms

tenn.

in

in

seconds.

t.

the series.

of

the

hot

and

cold characteristics

O'ver

a current range which is

6.059922E-l

4.837078E-2

9.492610E-5
L 123040E-2

V()

and

fs

Term

r

l1

to

Teml

r

1I

t()

1

2.60493E-2

1 2

1.152177E-2 6.032362E-3

9232490E-1 1.483395E-1

2

6.

12466E-3 5.71829E-3 3.44264E-3

5.55958EO 2.63592EO

Double Side Cooled

D.C.

D.C. Single Side

~

J

2,45341E-l

-'

2.882934E-3

2.110802E-2

Cooled

4

6.75165E-2

..

4

1.857708E-3

1870581E-3

5 6

1.92072E-3
L33211E-2

171033E-3

1.65029E-3