Westcode Semiconductors M1242NC260, M1242NC360 Data Sheet

Fast Recovery Diode

M1242NC260 to M1242NC360

The data sheet

on

the subsequent pages

data for

of

this document is a scanned copy of existing

this·product.

(Rating Report 85NR2 Issue 1)

This data reflects the old part number for this product which is: SM26-36CXC824. This part

number must

NOT be used for ordering purposes - please use the ordering particulars

detailed below.

Please

use the following link to view an up to date outline drawing for this device

Outline W5

Where any information

An electronic data sheet for this product

For further information

on

the product matrix page differs from that

the product matrix

on

this product, please contact your local ASM or distributor.

must be considered correct

is

presently

in

the following data,

in

preparation.

Alternatively, please contact Westcode as detailed below.

Ordering Particulars

M1242 NC

••

Voltage code

Fixed Type Code Fixed

Outline Code V

ORM

/100

26-36

Typical Order Code: M1242NC260, 27.7mm clamp height, 2600V V

IXYS Semiconductor GmbH

Edisonstral1e 15
0-68623

Lampertheim

Tel:

[phone]
Fax: [phone]
E-mail: [e-mail]

IXYS Corporation

3540 Basset! Street

Santa Clara

Tel:

Fax:
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The
permission

In

the

Devices
and

CA

+1

+1

information contained herein

interest

with

limits

95054

[phone]

[phone]

of

and in

the

manner

of

product

improvement,

a suffix

code

contained

(2·letter, 3-letter

in

this

report.

USA

is

confidential

permitted

and

is

protected

by

the proprietors

Westcode

reselVes

or

letter/digitlletter combination)

An

Westcode

the

right

ES

aIXYS

by

Company

www.westcode.com

www.ixys.com

Copyright.

The

information

Semiconductors

to

change

added

Ltd.

specifications at

to

their

generic

may

any

not

be

time

code are

DE

used

or

disclosed

without

prior notice.

not

necessarily subject

except

to

0

Fixed Code

RRM

Westcode Semiconductors

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

E-mail: [e-mail]

E-mail: [e-mail]

with

the written

the conditions

Tel: +44

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Westcode Semiconductors

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+1

Fax:

©

Westcode

ltd

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(0)1249659448

Inc

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90807
[phone]
[phone]

Semiconductors

USA

Ltd.

Page

QUALITY AND EVALUATION LABORATORY

Issue 2

Rating

Origin: Q.E.L. Pages: 22

Written

a cold weld capsule.

Voltage

VRSM ) to this device

VRRM )

IF(A

Report

No: 85NR2 Issue 1

Diode Capsule

by:

M

~b./

This diode consists of a diffused

Grades)

V) : Single phase: 50

Double Side Cooled

A blocking voltage derating factor

)

of

0.13%

per

)

Hz,

180° half sinewave;

THs

50 mm diameter silicon slice, reference

deg. Celsius

for

Tj below 25°C

=

55°C,

Date:

Type:

SM26-36CXC824

Ch"k'd,rtIti-~.

is

applicable

100°C

5th

APProwd,!q.

July

1996

FFMFC,

2700 - 3700 V

:

: 2600 - 3600 V

: 1243 A, 600 A

26

- 36

mounted in

Single Side Cooled THS =

IF(rms) THS = 25 C

IF

THS=25

IFSM : t = 10ms

IFSM:

t = 10ms

rt

: t = 10ms;

rt

: t = tOms;

rt

: t = 3ms;

THS:

Operating

Tstg:

Non-operating

°

°

C

half

half

TJ
TJ

TJ

(initial) =

Range

(initial) =
(initial) =

sinewave;

sinewave;

125°C;
125°C;

125°C;

100°C

)

) Double side cooled

)

TJ

(initial) =

TJ

(initial) =

125°C

125°C

VRM

= 0.6VRRM(MAX)

VRM

s::

10V

VRM

s::

10V

VRM = 0.6VRRM(MAX)

VRM

S::10V

348 A

2465 A

2108 A

t6.4

kA

18.0

kA

1.34 x 10 A s

1.62 x 10 A s

1.20 x 10 A s

: -40 To +125 °c
: -40 To +150 °c

6 2
6 2
6 2

Page

No

Page Issue 2

R.R.

No

85NR2

R.R. Issue 1

2

Characteristics

A :

TJ=

2SoC

B :

TJ=

2SoC

C :

TJ=

2SoC

D

:TJ=2SoC

A)

B)

VF = A + B.ln(iF) + C.iF + D

(Maximum values unless otherwise stated)

..J

iF

C )

D )

VFM

at

IFM = 2200 A

Rth(J-HS) Double side cooled ) Steady-state d.c. and

IRRM :

Vfr :

Single side cooled ) 1

at

VRRM(MAX)

at

diF/dt =

~

a.c. resistive load.

:

1.27V

:

0.420mQ

2.20 V

0.022 KfW

0.044KfW

60mA

Reverse recovery

diRldt = 60 Allls;

QRR

(total area)

QRA

(SO%

chord)

trr

(SO%

chord)

IRM

Mounting Force

Outline Drawing

JEDEC

Outline

NOTE:

at

IFM = 1000 A; tp = 1000

VRM

= 50 V

No.

All characteristics arc at

IlS

: 810 IlC

: 100A249

: DO-200AC

TVJ

= TJrnax operating unless stated otherwise.

8

Ils

19 -26

kN

(1900 - 2600 kg.!)

Page

No 3

Page

Issue 2

R.R.

No

8SNR2

R.R. Issue 1

CONTENTS

Ratings

Characteristics
Contents
Voltage Ratings
(2) Introduction

(3) Notes on

(4) Reverse Recovery Loss

the

Ratings

Square wave ratings

(a)
(b) Energy

per

pulse characteristics

(a) Determination by measurment
(b) Design Method

Limit

Forward

Transient
Surge

Current

Voltage Characteristic

Thermal Impedance Characteristic

and

rt

vs

Duration of Surge
Recovered Cbarge
S -

Factor

Reverse recovery energy
Square
Square

Square
Square

Energy
Energy

wave frequency

wave frequency

wave frequency

wave frequency

per

pulse

per

pulse 100
Sine wave frequency
Sine

wave frequency rating S50C Sink

Sine

wave energy

SOO

per

per
rating
rating

rating
rating

A/f.lS
A/f.lS

rating

pulse

Outline Drawing

pulse

85°C Sink 500
SSoC

Sink
85°C Sink 100
SSOC

Sink

85°C Sink

SOO

100

A/f.lS

A/f.lS
A/f.lS
A/f.lS

Page

1

2

3

4

S

S

5

S
6
7

8

9

10

11

12

13

14

15

16
17

18

19

20
21

22

Changes to

Page
Page
Page
Page
Page

Pages 1,2 &3

1 Re-issued: Mean currents
2 Re-issued: Thermal impedance
3 Re-issued: Modification list added
8 Re-issued:
22

Re-issued: New OIL Drawing

New

Plot

- 4 -

Voltage

Ratinqa

Voltage

26
28
30
32
34

36

ClaBo

V

HIH"l

V

2600
2800
3000
3200

3400
3600

Vl1sr~

V

2700
2900
310b
3300
3500
3700

8upply

This

l1a8

neport

been

i8

applicablo

agreed

to

by

Salea/Production.

l1iqher

or

lovlOr

voltago

gradED

wllCn

2.0

INTRODUCTION

The

diode

all

diffuoed

characteristics

3.0

NOTES

(a)

Square

silicon

ON

series

with

THE

comprises

81icos.

good

RATINGS

wave

ratin9s

"5"

- 5 -

fast

All

theso

factors.

recovery

diodes

cold-weld

hove

controlled

capsules

with

reverse

recovery

forward

(b)

obtained

4.0

On
voltage,
Tho

following

reverse

reverse
waveform
evaluated

These

Energy

These

Let:

Then

and

REVERSE

account

no

recovery

(a)

Determination

From

(sce

Note

ratings

current

per

curves

for

Ep
width,

W

AV

conditions

be

=

are

of

100

pulse

enable

the

in

Ep

x

given

characteri.8tic8

Energy
JOUles.

f.

TSINK = TJ(MAX) - W

RECOVERY

of

allowance

procedure

the

LOSS

number

for

is

reverse

recommended

loss.

by

Measurement

waveforms

1)

and

recovery

be

fI

joules

of

reverse

1000

per

recovery

waveform

from:

and

rapid

not

of

voltage

pulse.

for

leading

500A/uS.

estimation

covered

per

pulse

Rth

AV

circuit

recovery

current

must

by

for a given

variables

loss

for

use

preDcnt

be

A

nC\'i

edge

linear

of

device

the

frequency

affecting

has

been

where

obtained

during
constructed.
heot

sink

rates

dissipation

ratings.

current

reverse

made

it

is

necessary

from a high

recovery,

Let

temporoture

of

rise

and

pulse

in

these

Frequency

on

instantaneouo

the

area

con

of

to

be

recovery

ratings.

to

include

unrler

tilDn

shunt

this

bD

t

duration

A

Area

f =

rated

The

total

W(TOT)

T SINK

I

w lOre r

under

=

':i(

(new)

=

4.11 x 10

t

of

reverse

reverse

frequency

dissipation

..

orlglna

1)

at

is

+ Axf

-5

recovery

loss

waveform

the

original

now

given

loss

by

per

per

heat

pulse

pulse

sink

in

microseconds

in

joules

temperature

(W.S.)

NOTE

- 6 -

1

REVERSE

This

recovery

that:

(a)

(b)

(c)

(b)

Design

In
conditions,
from

curves

Let
page

12

RECOVERY

device

current.

a.c.

coupled

affected

The

measuring

100

screen

without

Measurement

out

with

series

Method

circumstances

or

for

on

page

E be

the

)

LOSS

BY

MEASUREMENT

has 8 low

When

measuring

devices

by

prior

oscilloscope

heights

ov~rload.

of

reverse

an

appropriote

connected

where

design

12

value

of

reverse

such

passage

-

to

across

,

it

is

purposes,

energy

recovered

the

charge

as

current

of

hi~)h

has

cope

recovery

silubber

diode

not

possible

the

per

reverse

charge

care

amplitude

adequate

with

the

voltage
of

anode

additional

end

must

transformers

dynamic

initial

waveform

.22

uF

to

cathode.

to

measure

losses

cycle

in

peak

reverse

be

taken

are

forward

current.

rango -typically

forward

should

ond lOohms

voltage

may

be

joules

to

ensure

not

current

be

in

and

estimated

(curves

carried

current

on

Let

ThenT

Where TSINK new
original

f be

SINK

is

the

operating

(new) ( ) E R f

~

is

the

heat

sink

frequency

TSINK

the

required

tempereture

original

in

Hz

- x

maximum

given

wi

th

heat

th

x

sink

the

temperature

freq'uency

Bnd TSINK

ratings.

- 7 -

(fJ

ll!

0:

W

0..

L

<t

"

I-

Z

LJJ
0:
0:

::J

U

0

0:

<t

3:

0:

0

lJ...

(fJ

::J

0

W

Z

<t

I-

Z

<t

I-

(fJ

Z

H

10000

5000

3000

1000

500

300

FORWARD

CHARACTERISTIC

25°C;

1

,/

!

/'

/,

/1

/J

III

/

II

I (

OF

LIMIT

/

DEVICE

..-

'"

./

./

./

/'

""

,/

/"

/

V

~25OC

'"

~

/V

100

0.5

1.0

I

I

I

I

1.5

MAXIMUM

2.0 2.5

FORWARD

3.0

VOLTAGE I VOLTS

3.5

4.0

4.5

5.0