t capacity for fusing tp=10ms, VRM≤10V, (note 5)442×10
I
, (note 5)
RRM
Operating temperature range-40 to +150°C
Storage temperature range-40 to +150°C
below 25°C.
j
initial.
j
MAXIMUM
LIMITS
MAXIMUM
LIMITS
9.4kA
3
361×10
3
UNITS
UNITS
A2s
A2s
Data Sheet. Types M0914LC200 to M0914LC250 Issue 1Page 1 of 11January, 2003
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Characteristics
PARAMETERMIN.TYP.MAX. TEST CONDITIONS (Note 1)UNITS
V
V
r
V
I
Q
Q
I
t
R
FM
T0
T
FRM
RRM
rr
ra
rm
rr
thJK
Maximum peak forward voltage
--3.0I
Threshold voltage--1.768V
Slope resistance--0.653
Maximum forward recovery voltage--75di/dt = 1000A/µsV
--50Rated V
--4.1I
Peak reverse current
--50Rated V
Recovered charge-300-µC
Recovered charge, 50% Chord-170250µC
Reverse recovery current-110-A
Reverse recovery time, 50% Chord-3.2-
--0.032 Double side cooled
Thermal resistance, junction to heatsink
--0.064 Single side cooled
=3770A
FM
=1800A
FM
RRM
, Tj=25°C
RRM
I
=1000A, tp=1000µs, di/dt=60A/µs,
FM
=50V, 50% Chord.
V
r
V
mΩ
mA
µs
K/W
FMounting force10-20kN
W
Weight-340-g
t
Notes:-
1) Unless otherwise indicated T
=150°C.
j
Data Sheet. Types M0914LC200 to M0914LC250 Issue 1Page 2 of 11January, 2003
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage GradeV
20200021001250
22220023001350
25250026001500
2.0 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:
where IF = instantaneous forward current.
4.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.
RRM
(V)
V
RSM
(V)
IDICIBAV⋅+⋅+⋅+=)ln(
FFFF
V
dc
R
(V)
(ii) Qrr is based on a 150µs integration time.
s
µ
150
I.e.
(iii)
Data Sheet. Types M0914LC200 to M0914LC250 Issue 1Page 3 of 11January, 2003
=
FactorK=
dtiQ
.
rrrr
∫
0
t
1
t
2
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f
)
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5.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:
[]
Where k = 0.2314 (°C/W)/s
E
= Area under reverse loss waveform per pulse in joules (W.s.)
= Rated frequency in Hz at the original sink temperature.
R
The total dissipation is now given by:
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
amplitude forward current.
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
= d.c. thermal resistance (°C/W)
th(J-Hs
fEWW
originaltot
NOTE 1 - Reverse Recovery Loss by Measurement
(a) AC coupled devices such as current transformers are not affected by prior passage of high
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
)()(
⋅+=
RfkETT
⋅+⋅−=
)()(HsJthMAXJSINK
−
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:
2
R
Where:Vr= Commutating source voltage
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
V
⋅= 4
C
R = Snubber resistance
r
di
C
⋅
dt
S
= Snubber capacitance
S
Data Sheet. Types M0914LC200 to M0914LC250 Issue 1Page 4 of 11January, 2003
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7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
oo
4
I
=
AV
2
Where V0 = 1.768V, rs = 0.653mΩ
⋅⋅
rff
s
WrffVV
⋅⋅⋅++−
AVs
ff = form factor (normally unity for fast diode applications)
∆
T
W
The forward characteristic I
(i) the well established V
((iiii))
=
AV
a set of constants A, B, C, and D forming the coefficients of the representative equation for V
R
th
TTT
−=∆
)(
7.2 Calculation of V
terms of I
given below:
F
HsMAXj
using ABCD Coefficients
F
Vs VF, on page 6 is represented in two ways;
F
and rs tangent used for rating purposes and
o
IDICIBAV⋅+⋅+⋅+=)ln(
FFFF
in
F
The constants, derived by curve fitting software, are given in this report for hot characteristics. The
resulting values for V
that plotted.
8.0 Frequency Ratings
The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum ratings
shown on page 1.
9.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
10.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
agree with the true device characteristic over a current range, which is limited to
F
25°C Coefficients150°C Coefficients
A0.806428A
B0.1553537B
C3.4543×10
D8.80253×10
-4
-3
C
D
0.5176484
0.1144229
2.48156×10
0.02779502
-4
Data Sheet. Types M0914LC200 to M0914LC250 Issue 1Page 5 of 11January, 2003
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Curves
Figure 1 – Forward characteristics of Limit deviceFigure 2 – Maximum forward recovery voltage
(A)
FM
10000
1000
M0914LC200-250
Issue 1
25°C
150°C
(V)
FRM
1000
100
M0914LC200-250
Issue 1
150°C
25°C
Instantaneous forward current - I
100
01234567
Maximum in stantaneous forward voltage - V
Figure 3 - Recovered charge, Q
10000
M0914LC200-250
Issue 1
Tj = 150°C
(µC)
rr
1000
10
Maximum forward recovery voltage - V
1
(V)
FM
rr
2000A
1500A
1000A
500A
Figure 4 - Recovered charge, Qra (50% chord)
10100100010000
Rate of rise of forward current - di/dt (A/µs)
1000
M0914LC200-250
Issue 1
Tj = 150°C
(µC)
ra
100
2000A
1500A
1000A
500A
Total recovered charge - Q
100
101001000
Commutation rate - di/dt (A/µs)
Data Sheet. Types M0914LC200 to M0914LC250 Issue 1Page 6 of 11January, 2003
Recovered charge - Q
10
101001000
Commutation rate - di/dt (A/µs)
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Figure 5 - Maximum reverse current, I
1000
M0914LC200-250
Issue 1
Tj = 150°C
(A)
rm
100
Reverse recovery current - I
10
101001000
Commutation rate - di/dt (A/µs)
rm
2000A
1500A
1000A
500A
Figure 6 - Maximum recovery time, trr (50% chord)
10
M0914LC200-250
Issue 1
Tj = 150°C
(µs)
rr
Recovery time - t
1
101001000
Commutation rate - di/dt ( A/µs)
2000A
1500A
1000A
500A
Figure 7 – Reverse recovery energy per pulseFigure 8 - Sine wave energy per pulse
1000
M0914LC200-250
Issue 1
Tj = 150°C
Vr=300V
No Snubber
(mJ)
r
Energy per pulse - E
100
101001000
Commmutation rate - di/dt (A/µs)
2000A
1500A
1000A
500A
1.00E+03
M0914LC200-250
Issue 1
Tj = 150°C
1.00E+02
4000A
3000A
2000A
1000A
500A
1.00E+01
Energy per pulse (J)
1.00E+00
1.00E-01
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Data Sheet. Types M0914LC200 to M0914LC250 Issue 1Page 7 of 11January, 2003
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Figure 9 - Sine wave frequency vs. pulse widthFigure 10 - Sine wave frequency vs. pulse width
1.00E+05
M0914LC200-250
Issue 1
THs = 55°C
1.00E+05
M0914LC200-250
Issue 1
THs = 85°C
500A
1.00E+04
1000A
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
2000A
3000A
4000A
1.00E-051.00E-041.00E-031.00E-02
100% Duty Cycle
Pulse width (s)
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
500A
1000A
2000A
3000A
4000A
1.00E-051.00E-041.00E-031.00E-02
100% Duty Cycle
Pulse width (s)
Figure 11 - Square wave energy per pulseFigure 12 - Square wave energy per pulse
1.00E+03
M0914LC200-250
Issue 1
di/dt =10 0A/µs
Tj = 150°C
1.00E+03
M0914LC200-250
Issue 1
di/dt =500A/µs
Tj = 150°C
1.00E+02
1.00E+01
Energy per pulse (J)
1.00E+00
1.00E-01
1.00E-051.00E-041.00E-031.00E-02
Data Sheet. Types M0914LC200 to M0914LC250 Issue 1Page 8 of 11January, 2003
4000A
3000A
2000A
1000A
500A
Pulse width (s)
1.00E+02
1.00E+01
Energy per pulse (J)
1.00E+00
1.00E-01
4000A
3000A
2000A
1000A
500A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
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Figure 13 - Square wave frequency vs. pulse widthFigure 14 - Square wave frequency vs. pulse width
1.00E+05
1.00E+04
500A
1000A
M0914LC200-250
Issue 1
di/dt =100A/µs
THs=55°C
100% Duty Cycle
1.00E+05
1.00E+04
500A
1000A
M0914LC200-250
Issue 1
di/dt =100A/µs
THs = 85°C
100% Duty Cycle
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
2000A
3000A
4000A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E-051.00E-041.00E-031.00E-02
2000A
3000A
4000A
Pulse width (s)
Figure 15 - Square wave frequency vs. pulse widthFigure 16 - Square wave frequency vs. pulse width
1.00E+05
1.00E+04
M0914LC200-250
di/dt =500A/µs
THs = 55°C
100% Duty Cycle
Issue 1
1.00E+05
1.00E+04
M0914LC200-250
Issue 1
di/dt =500A/µs
THs = 85°C
500A
500A
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
Data Sheet. Types M0914LC200 to M0914LC250 Issue 1Page 9 of 11January, 2003
1000A
2000A
3000A
4000A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E-051.00E-041.00E-031.00E-02
1000A
2000A
Pulse width (s)
100% Duty Cycle
3000A
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Figure 17 – Maximum surge and I2t ratings
100000
M0914LC200-250
Issue 1
(A)
FSM
Tj (initial) = 150°C
10000
Total peak half sine surge current - I
1000
13510151050100
Duration of surge (ms)Duration of surge (cycles @ 50Hz)
I2t: V
RRM
I2t: VR=60% V
I
: V
FSM
RRM
I
: VR=60% V
FSM
≤
≤
10V
RRM
10V
RRM
1.00E+07
1.00E+06
1.00E+05
2
2
s)
t (A
Maximum I
Figure 18 – Transient thermal impedance
0.1
M0914LC200-250
Issue 1
0.01
0.001
Thermal impedance (K/W)
0.0001
0.00010.0010.010.1110100
SSC 0.064K/W
DSC 0.032K/W
Time (s)
Data Sheet. Types M0914LC200 to M0914LC250 Issue 1Page 10 of 11January, 2003
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Outline Drawing & Ordering Information
ORDERING INFORMATION(Please quote 10 digit code as below)
3540 Bassett Street
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors
Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any ti me without prior
notice.
Devices with a suffix code (2-letter or letter/digit/l etter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.