Westcode Semiconductors M0451YX120, M0451YX200 Data Sheet

Soft Recovery Diode

Types

The data sheet

on

M0451YX120 to M0451YX200

the subsequent pages of this document is a scanned copy of existing

data for this product.

(Rating Report 83N R

10 Issue

This data reflects the old part number for this product which

This part number must NOT

be

used for ordering purposes - please use the ordering

particulars detailed below.

The limitations of this data are as follows:

Only YC outline

The

following links will direct you to the appropriate outline drawings

Outline W2 -

drawing (W2)

15.1

mm

Clamp height

in

Outline W3 - 26.6mm Clamp height

on

Where any information

the product matrix page differs from that

the product matrix must be considered correct

electronic data sheet for this product

An

For further information

on

this product, please contact your local ASM or distributor.

is

presently

1)
is:

datasheet

in

SM12-20CXC176.

in

the following data,

preparation.

Alternatively, please contact Westcode

as

detailed below.

Ordering Particulars

M0451

Fixed Type Code

YC - 14.5mm Clamp height

YH - 26mm Clamp height

Typical Order Code: M0451YH160, 26mm Clamp height,

IXYS

Semiconductor

EdisonstraP.,e
0-68623 Lampertheim
Tel:

+496206

Fax:

+496206

E-mail: [e-mail]

IXYS

Corporation

3540 Bassett Street
Santa Clara CA 95054 USA

+1

[phone]

Tel:
Fax:

+1

(408) 496 0670

E-mail: [e-mail]

The

information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written

of

permission
In the interest
Devices with a suffix code

and

and

of

product improvement, Westcode reserves the right to change specifications at any time without prior notice

limits contained in this report.

GmbH

15

503-0

503-627

in

the manner permiUed

(2~letter,

by

the proprietors Westcode Semiconductors Ltd.

3~!etter

or letter/digiUletter combination) added

YX

An'iIXYS

Voltage code

V

RRM

12-20

1600VV

Company

www.westcode.com

www.ixys.com

to

their generic code are not necessarily subject to the conditions

••

/100

RRM

0

Fixed Code

Westcode

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

E-mail: [e-mail]

Westcode

E-mail: [e-mail]

Semiconductors

Tel: [phone]

Fax: +44 (0)1249 659448

Semiconductors

3270 Cherry Avenue

Long Beach CA

Tel:

Fax:

© Westcode Semiconductors Ltd.

90807 USA

+1

[phone]

+1

[phone]

Ltd

Inc

QUALITY

EVALUATION

LABDRATORY

Rating
Origin:

Written:

diod~

voltage
transistor

Ratings

Voltage
V

RSM

VRRM

VRWM

IF

(AV)

If(rms)
If

IfSM

J

fSM

J2

t

2

I

t t

2

J

t

operating

THS

T

;

stg

Report:

B.W.P. Brown

The

CXC176

based

Grades

Single
Double

Single
T

HS

THS

t

= 10ms

t

10ms

t

1Oms;

=

10ms;

=

3ms; T

t

=

non-ope

B3NR10

is a high
on a

range

switching

phase;
side

side
25°C
25°C

I:

half

half

range

rating

Diode Tvpe

slice

above

Ratings

50Hz,
cooled.
cooled.

sinewave;

sinewave;

(initial)

TJ

(initial)

TJ

(initial)

J

SM12-t-',20CXC176

Checked:#t/_

power,

diameter

that

of

the

regulators.

and

Characteristics

1

BOo

T

HS

T

HS

T

J

V

=

0.6

RM

TJ

V

~10V

RM

co

1250C;
125°C;

1250C;

=

high

voltage,

of

24

mm

type

CXC170.

half

= 55°C, 100
= 100°C

(initial)

(initial)

.

s~newave;

VRRM(MAX)

V

=

RM

V

RM

V

RM

Date:
Pages:

5th

December,

28

1983

APproved'~

fast

and

0

C

= 125

0.6

<:

10V

-

10V

c:

recovery,

provides

For

use

(converter

t.

ra

J.ngs

0

C;

VRRM(MAX)

all

an

ext~nsion

in

inverters

12-20

1300-2100V
1200-2000V

1050-1

)

434A; 202 A
114A

B70A

724A

4500A

diffUSEd

BooV

4950A
101

x

10

122 x 10

91

x 103A2SEC

of
and

3

3A2

A

2

SEC
SEC

-

-40

to

+12SoC

-40

to

+1S00C

Characteristics

- 2 -

(Maximum

TJ

Vo

rs

TJ

VFM

:

Inl

Rth(J-HS)

:

IRRM

Orr

:

IFM

VRM

Mounting
Outline

values

125

==

1250C

==

635A

Double
Single

T

1250C

J

550A
50V

Force

Drawing :

unless

0

C

:

stated

==

TVJ

side
side

~m~

;

TVJ

12SoC

cooled
cooled

==

VRRM(MAX)

dI/dt c IWA/uS

125°C

==

otherwise)

1.00V

8.74

mohms

1

.4

7V
O.OBSoC/W

O.17°C/W
20mA
160uC

max.

33D-55Kg.f
101

A260

CONTENTS

Ratings

Voltage

(2)

Introduction

(,)

Notes on
a)
b)

c)

(4)

Reverse

a)

b)

and

characteristics

grade

table

the

ratings

Square-wave

Energy
Junction

Determination

Determination

per

temperature

Recove:r;y

ratings

pulse

Loss

by
without

-, -

characteristics

rise

per

pulse

~!easurement

Measurement

~

1,2

4

5

5

5

6

6

7

Limit

Transient

Surge

50
50
Recovered Charge
S.
Reverse

Reverse
Squsre

Temperature

Energy

Sine

Sinewave Temperature

Sinewave energy

Forward

Thermal Impedance

Rating

Hz

Converter

Hz

Coverter

Factor

recovery
recovery

wave

" " n

"
"

"

n

"

per

"

"

wave

frequency

"

"

Outline

drawing

Characteristic

Ratings

Ratings

energy

temperature

frequency

" "

n

rise

per

"

pulse

"

200A/ps
100A/rs

"

per

fI

rating

pulse

double

single

per

rating

"550C"

"

pulse

"

n

rise

side

side

pulse

rise

85°C

85°C
55°C

200A/ps
10oA/ps

8sPC

55°C

per

pulse

cooled

per

Sink

Sink

"

cooled

pulse

2ooA/F

100A/ps

"

"

"

"

8

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

- 4 -

Voltage

Ratings

Voltage

12

14

16
18

20

Class

V

RRM

V

1200

1400
1600
1800
2000

.

V

RSM

1300

V

1500
1'700
1900
2100

supply

This

has

Report

been

is

applicable

agreed

to

by

Sales/Production.

higher

or

lower

voltage

grades

when

2.0

INTRODUCTION

The

24

reverse
devices
switching

3.0

NOTES

a)

diode

mm

ell

diffused
recovery
will

ON

THE

Square

series

find

circuits.

RATINGS

wave

comprises

silicon

characteristics

applications

ratings

fest

slices.

recovery

All

with

as

"free

cold-weld

these

good "S"

diodes

wheel",diodes

cepsules

hsve

fectors.

controlled

These

in

transistor

with

b)

c)

These

of

forward

Energy

These

be

obtained

Let:

Then

Junction

ratings

per

curves

Ep

WAV c Ep x f.

are

current

pulse

enable

for

be

the

width,

temperature

given

characteristics

conditions

for

of 1 DO

rapid

Energy

in

joules

rise

leading
and 200

estimation

not

covered

per

pulse

per

pulse

edge

linear

IuS.

of

device

by

the

for a given

rates

dissipation

frequency

current

of

rise

ratings.

and

to

pulse

Junction
is

given

pulse

TSINK c 125-T-EpfRth

where f· a number

and T =

temperature
but

is

operation.

temperature

only

rise
required

of

pulses

rise

at

end

for

for

per

of

conduction

low

second,

single

duty

pulse,

over a single

cycle

Hz

deg.

('

1~)

C.

or

pulse

single

- 6 -

4.0

O~

voltage,

The

following

reverse

a)

REVERSE

account

recovery

(see
reverse
waveform by A

evaluated

RECOVERY

of

no

allowance

procedure

loss.

Determination

From

waveforms'

Note

1)

recovery

from:

TSINK

where r

(new) =

the

and

joules

t

LOSS

number

for

is

by

reverse
loss

TSINK

=

1.64 x 10-

of

circuit

reverse

recommended

Measurement

of

recovery

voltage

waveform

per

pulse.

(original)

recovery

for

current

present

must

A new

4

J

variables

loss
use

where

obtained

during

be

constructed.
heat

- A

(r

has

sink

'+t,10

affecting

been

made

it

is

from a

recovery,

temperature

6

reverse

in

these

necessary

high

an

Let

the

recovery

ratings.

to

include

frequency

instantaneous
area

under

can

then

be

shunt

this

t =

duration

A =

Area

under

f =

rated

The

total

W(TOT} = W(original)

Note 1

REVERSE

recovery

that:

RECOVERY

This

current.

a)

b)

c}

frequency

dissipation

LOSS

device

a.c,

coupled
affected
The

measuring

100

screen
without
Measurement
carried

connected

of

reverse

reverse

at

is

now

+ Axf

BY

MEASUREMENT

has a low

When

measuring

devices

by

prior

oscilloscope

heights -to

overload.

of

reverse

out

with

across

recovery
loss
the

original

given

reverse

such

passage

an

appropriate

diode

loss

waveform

by

recovered

the

charge

as

current

of

high

has

cope

with

recovery

anode

to

per

pulse

per

pulse

heat

sink

care

transformers

amplitude

adequate

the

voltage
snubber
cathode.

in

in

temperature

charge

must

dynamic

initial

waveform
of

microseconds

j:oules

and
be

forward

forward

O.1uF and 50hms

(W,

s,

peak

reverse

taken

range -typically

should

Bre

current,

to

not

current

be

)

ensure

in

series

b)

Design

In
current
transient

Method

circumstances

conditions,

junction

where

or

for

design

temperature

- 7 -

it

is

not
purposes,

rise

possiblE

may

be

estimated

the

to

measure

additional

from

voltage

losses

curves

end
and

on

pages

Let E be

p.

Let g be

1l1)

14

and

the

the

15

value

value

(degrees

Let f be
Then

the

operating

TSINK new =

Where TSINK new

and

TSINK

original

ratings.

•

of

of

centigrade)

TSINK

is

t~e

is

energy

per

temperature

(curves

frequency
original

required

the

heatsink

reverse

rise
on

p.

in

Hz

- Q -
maximum

temperature

cycle

per

15)

ERth

heat

in

reverse

f

sink

given

joules

(curves

recovery

temperature

with

cycle

the

on

frequency

(J}

"

w

n::

w

0..

:I:

<

v

I-

Z

W

n::
n::

:J

U

0

Q.:

<

~

cr::

0

LL

(J}

:J

0

W

Z

<

I­Z

<

I-

(J)

Z

....

1000e1

1000

100

--

1.0

-

J

II

rORW~RD

-t-

/

v

/

1/

:

1.4

~AXIMUM

CHARACTERISTIC

-1

125°C

L.--~

".~

V

/'

I

I

1.8

INSTANTANEOUS

OF

-----1

-1

I

2.2 2.6

FORWARD

LIMIT

,

.

-

---

VOLTAGE

DEVICE

!--

--

<VOLTS)

--

--

-

3.4

"

l­I-

<

:J;

.......

U

o

v

w

u

z

<

o

w

(l.

~

H

.J

<

~

n::

w

:r

l­I-

Z

W

H

(J}

Z

~

I-

0.01

0.

1.0

0.

001

1

~

.,-

0.001

JUNCTION

I

I

I I

1

~

TO

....

- I

I

I

,

0.

HEAT

,.-

01

V

SINK

I

......

T I

ME

TRANSIENT

,

I

i

, '

L~

...

I

I

0.

1

(SECONDS)

--

;;.-

THERMAL

,

l.---

..-

I

IMPEDANCE

I

i

I

I I

O.18°C~

O.09°CIW

~

_r-'

I

Ii

I

0.

180

°C/W

0.090

°C/W

I

10.

0

"

<

~

""

.-.

z

W

0::
0::

::>

u

w

(.!I

0::

::>

CI)

w

z

....

CI)

U.

..J

<

J:

~

<

w

a..

..J

<

.-.

0

.-.

100

,_

1

__

------1---+------1------1

t::::---...

H:l

~oo;;;;;::::

.........

______

...-

...><:

__

------r--J--t-+

MAXIMUM

-

~K

.........

~f.....

NON

REPETITIVE

T

~

l..,..--I--I---

---

~

__

!..--

""t-

__

.........

-P~~~~~~------L---

SURGE

I/vt::t>.-V

CURRENT

I I I I

vi-''''

AT

V

--Y'/V

-L~f--I-

-k

F'

r---!--t-+~~~~====~~

--

-

---I--r--r-t-l-ttii---1~-+~~~~-~~~'~~~~~

I---t--+--l-.---L_-

I~_~

~r~HH----t-~~r-

INITIAL

/~V

~

~~

JUNCTION

11'.,

-,V

·

-~~

..

----J-t-t-H+I+-~

__

-1~~~~~~~,±rt----4---~-L_-LlJ-ll

TEMPERATURE

1'-

V,,"~}

Y V

I

v

l.--

l/

y

'7

125°C

/'

r

11'.

/V

_ttt

__

r--+-++-----t---I-+-+--UJ

+--i----L.-J-i'----!--+...l-

__-+-_.---I-~----f-I-

r--!--

f::::::::.-

, 60%

(lFSM:

V,,"

VRRM

6

10

j

.-+

-

c:n

u

w

CI)

NCI)

a..

X

S

5

N

~

....

X

:::>

X

....

X

<

X

\0

10

-f-

- -

~-~

- .

:=

0)

1

1

DURATION

3

OF

I I I I I I

5

SURGE

HJ

(me)

1

5

DURATION

OF

10

SURGE

(oyolee

o~

50

~

50

Hz)

11,,",eO%v"MI

I I I

100

III

10

4