Westcode Semiconductors M0437WC080, M0437WC140 Data Sheet

Soft Recovery Diode

Types

The data sheet

on

M0437WC080 to M0437WC140

the subsequent pages

of

this document is a scanned copy of existing

data for this product.

(Rating Report

80NR1 Issue

3)

This data reflects the old part number for this product which is: SM02-14CXC 170.

This part number must NOT be used for ordering purposes - please use the ordering

particulars detailed below.

Limitations of this data are as follows:

This device is only available for grades

08 to 14 (800V to 1400V V

RRM

)

The following link will direct you to the appropriate outline drawing

Outline

Where any information on the product matrix page differs from that

W1

in

the following data,

the product matrix must be considered correct

in

An electronic data sheet for this product is presently

For further information

on

this product, please contact your local ASM or distributor.

preparation.

Alternatively, please contact Westcode as detailed below.

Ordering Particulars

M0437 wc

Fixed Type Code Fixed

Outline Code V

Typical Order Code: M0437WC140, 14mm clamp height, 1400V V

IXYS Semiconductor GmbH

Edisonstra~e

D-68623 Lampertheim
Tel:

[phone]
Fax:
E-mail: [e-mail]

IXYS Corporation

3540 Bassett Street
Santa Clara
Tel:

+1

Fax:
E-mail:

The information contained herein
permission

In the interest

Devices with a suffix code (2-letter, 3-letter or letter/digitlletter combination) added
and

limits contained

15

[phone]

CA 95054 USA

[phone]

+1

[phone]

[e-mail]

is

of

and in the manner permitted by the proprietors

of

product improvement, Westcode reserves the right to change specifications at any time without prior notice.

in

this report.

confidential and is protected by Copyright. The information may not be used

An

Westcode

E

CIXYS

www.westcode.com

Semiconductors Ltd.

Ie

Company

www.ixys.com

to

their generic code are not necessarily subject

or

••

Voltage code

RRM

08-14

E

disclosed except with the written

/100

RRM

to

the conditions

0

Fixed Code

Westcode Semiconductors

Langley Park Way. Langley Park,

Chippenham, Wiltshire, SN15 1GE.

E-mail: [e-mail]

E-mail: [e-mail]

Tel: [phone]

Fax: [phone]

Westcode Semiconductors Inc

3270 Cherry Avenue

Long Beach CA 90807 USA

+1

[phone]

Tel:

Fax:

+1

[phone]

© Westcode Semiconductors Ltd.

Ltd

QUALITY

EVALUATION

LABORATORY

Rating
Origin:

Written

This

diameter

ThiS

Report

Ratings
Voltage

V

RSM

VRRM

IF(AV)

IF(rms)

:

T

Operating

HS

T't;

s g

Report:

diode

silicon

Grades

:

Single
Double
Single

T

HS

T

HS

.t

=

t

=

t

=

t

'::::

t

=

Non-operating

80NR1

Diode Type

consists

supersedes

phase;
Side
Side

= 25°C )

° ) Double

= 25 C )

10ms

half

half

10ms
1

Oms;

10ms; T

3ms; T

Range

slice

Cooled
Cooled

T

J
J
J

(Issue

SM02-14:CXC170

of a diffused,

mounted

Rating

50 Hz,

THSE = 55°C,

THS

sinewave;

sinewave;
(initial
(initial)
(initial

~)

Checked:

in a cold

report

1800 half

= 100°C

side

cooled

T

(initial)

J

T

(initial)

J

'=

125°C;

= 125°C; V

=

125°C;

MN)

fast

weld

80NR1!

sinewave;

100°C

V

RM
RM

V

RM

recovery

capsule

(Issue

::::

125°C;

=

125°C;

::::

0.6V

f

10V

~

10V

Date:

Pages:

Approved:

24

housing.

2).

(Converter

V

RM

V

RM

(MAX)

RRM

18th

November, 1991

22

/l};

(rJj5;z::4:t'.

mm

Ratings)

=

O.6V

RRM

10V

,\/1

""~)",

02-14

300~1500V

200·-1400V

438A,
114A
S80A

727A

(MAX)

I 4500A

4950A

1.01

1.22

0.91

-40

-40

i'

to
to

202A

x 105

x 10
x 10

+125'
+150'

:

A

5

A:

5

A:

Characteristics

- 2 -

(Maximum

T

Vo
r T

V

s
FM

:

J
J
IFM

Rth(J-HS}

IRRM

Q

rr

t

(conditions

rr

Mounting
Outline

JEDEC

No.

values

125°C
125°C

:::

Double
Single

T J

'"

IFM

:=

V

:=

RM

Force

Drawing

unless

635A

TVJ

side
side

125°

C V R M

550A ; dI/dt
50V T VJ:=

as

above)

stated

'"

cooled
cooled

==

V R R M (

125°C

otherwise)

125°C

MA

X )

= 40A/uS

(50%

chord

value)

1.02V
O.7mohms

1.46V
O.OgoC/W

O.18°C/W

20mA

75uC

3uS
330-550kg.f
10l':A241

:.

D0200AA

.>

CONTENTS

Ratings
Voltage

(2)

Introduction

(3)

Notes

(a)

(b)

(4)

Reverse

(a)
(b)

Limit

Forward
Transient
Surge

Rating

Recovered

S.

Factor
Reverse
Square
Square

Square
Square
Energy

Energy
Sine

wave

Sine

wave

Sine

wave

Outline

and

Characteristics

Grade

on

Table

the
Square-wave
Energy

Recovery
Determination
Design

Characteristic

Thermal

Charge

recovery

wave

frequency

wave

frequency

wave

frequency

wave

frequency

per

pulse

per

pulse
freqwency
frequency
energy

draWing

Ratings

ratings

per

pulse

Loss

Method

Impedance

energy

rating
rating
rating

rating
200A/uS
100A/uS

rating
rating

per

pulse

- 3 -

characteristics

by

Measurement

per

pulse

8SoC
SSoC
8SoC

5SoC

85°C
55°C

Sink
Sink
Sink

Sink

Sink
Sink

200A/uS
2001l/uS
1DOA/uS

1

DOA/uS

Page

1 ,

4
5

5
5

5

6

7

8
9

10

11

12

13
14

15
16

17

18
19
20
21
22

2

CHANGES

Voltage

TO

80NR1

Grade

(Issue

increased

2)

from

12

to

14.

- 4 -

Voltage

Ratings

Voltage

02
04
06
08

10
12

14

Claso

V

nflM

V

200
400
600

800
1000
1200

1400 1500

Vnsr~

V

300
500
700

900
1100
1300

supply

This

has

Report

been

is

applicable

agreed

,.

to

by

Sales/Production.

higher

or

lower

voltege

grades

when

2.0

INTRODUCTION

The

diode

all

diffused

characteristics

3.0

NOTES

(a)

Square

silicon

ON

series

with

THE

comprises
slices.
good

RATINGS

wave

ratings

"S"

- 5 -

fast

All

these

factors.

recovery

diodes

cold-weld

have

controlled

capsules

with

reverse

recovery

forward

(b)

obtained

4.0

REVERSE

On
voltage,
The

following

reverse

(a)

(see
reverse
waveform be A
evaluated

These

ratings

current
Energy
These

curves

for

Let:

Ep
width,

Then W

AV

and TSINK =

RECOVERY

account

no

of

allowance

procedure

recovery

Determination

From

waveforms

Note

1)

recovery

from:

of

per

pulse

enable

conditions

be

the

in

=

Ep x f.

TJ(MAX)

LOSS

the

number

for

loss.

and

reverse
loss

joules

are

given

200

and

for

100A/uS

characteristics

rapid

not

covered

Energy

per

joules.

- W

AV

of

circuit

reverse

is

recommended

recovery

by Measurement

of

recovery

voltage

waveform

per

pulse.

leading

estimation

by

pulse

for a given

Rth

variables

loss

for

use

current

present

must

be

A

new

edge

linear

of

device

the

frequency

affecting

has

been

where

obtained

during
constructed.
heat

sink

rates

dissipation

ratings.

current

made

it

is

necessary

from a

recovery,

Let

temperature

of

and

reverse

in

these

high

an

the

rise

of

to

be

pulse

recovery

ratings.

to

include

frequency

shunt
instantaneous
area

under

can

then

be

this

where r

t =

duration

A Area
f =

rated

The

total

W - W + Axf

(TOT)

-

=

t

of

reverse

under

reverse
frequency
dissipation

(original)

.>

at

recovery
loss
the

is

waveform

original

now

given

loss

by

per

per

heat

pulse
pulse
sink

+

Rth x f)

in

microseconds

in

joules

temperature

)

(W.S.)

NOTE

- 6 -

1

REVERSE

This

recovery

that:

(a)

(b)

(c)

(b)

Design

In

conditions,

from

curves

Let E be

page

12)

RECOVERY

device

LOSS

hes

current.

a.c.

coupled

affected

The

measuring

100

screen

without

Measurement
out

with

series

connected

Method

circumstances

or

for

on

page

the

BY

MEASUREMENT

e low

When

reverse

measuring

devices

by

prior

passage

oscilloscope

heights -to

ov~rload.

of

reverse

an

appropriate

across

I

where

design

12.

value

it

purposes,

of

energy

the

such

cope

recovery

snubber
diode

is

not

per

recovered

charge

as

current

of

high

has

adequate

with

anode

possible

the

additional

reverse

cherge
care

transformers

amplitude

the

voltage
of

0.1uF

to

to

cycle

end

must

dynamic

initial

waveform

cathode.

measure

losses

in

peek

reverse

be

taken

are

forward

current.

range -typically

forward

should

and

10

ohms

voltage
may

joules

to

not

current

be

in

and

be

estimated

(curves

ensure

carried

current

on

Let f be
Then

Where TSINK new

original

is

the

operating

T (new) ( ) R

SINK

. = TSINK

is

the

heat

sink

frequency

original

the

required

temperature

in

Hz

- E x

maximum

given

heat

with

th

x f

sink

temperature

the

fre~uency

and

ratings.

TSINK

- 7 -

en

Cl.

::r

«

"'-

I­Z
LV

II
II
::l

tJ

0

II

«

~

II

0

u..

en

::l

0

LV
Z

«

I­Z

«

I-

en

Z

H

10000

5000

3000

1000

500

300

I-

1--

FORWARD

-

25

Q

~/

II

/

/

/

II

CHARACTERISTIC

I

I

./

/

/

/

/

/

1/

/

V

/

25

Q

V

/

/'

OF

r;;

l;=

LIMIT

t/

-

DEVICE

~~

V

I

~

--

-

------.:

~

100

1.0

il

1.2

MAXIMUM

1.4

INSTANTANEOUS

..

1.6

1.8

FORWARD

2.0

VOLTAGE / VOLTS

2.2

2.4