Westcode Semiconductors M0433WC120, M0433WC200 Data Sheet

Soft Recovery Diode

M0433WC120 to M0433WC200

The data sheet on the subsequent pages

of

this document

is

a scanned copy of existing

data for this product.

(Rating Report

This data reflects the old part number for this product which is:

80NR14 Issue 2)

SM12-20CXC174. This part

number must NOT be used for ordering purposes - please use the ordering particulars

detailed below.

The limitations of this data are as follows:

This device is available for grades 12 to

Please use the following link to view

Outline

an

up to date outline drawing for this device

20 (1200V to 2000V V

W1

Where any information on the product matrix page differs from that

in

the following data,

RRM

)

the product matrix must be considered correct

An electronic data sheet for this product is presently in preparation.

For further information on this product, please contact your local

ASM or distributor.

Alternatively, please contact Westcode as detailed below.

Ordering Particulars

M0433

Fixed Type Code Fixed

wc

Outline Code V

Typical Order Code: M0433WC120, 14mm clamp height,

IXYS

Semiconductor GmbH

Edisonstra~e

0-68623 Lampertheim
Tel: +49
Fax: [phone]
E-mail: [e-mail]

IXYS

3540 Bassett Street
Santa Clara CA 95054 USA
Tel:

+1

Fax:

E-mail:

The

information contained herein is confidential and is protected by Copyright. The information may not be used

permission
In the interest
Devices with a suffix code (2-letter, 3-letter

and limits contained in this report.

15

6206 503-0

Corporation

WESTCODE

An

fHXYS Company

www.westcode.com

[phone]

+1

[phone]

[e-mail]

of

and in the manner permitted

of

product improvement, Westcode reserves the right to change specifications at any time without prior notice.

by

the proprietors

or

letter/digiUletter combination) added to their generic code are

Westcode

www.ixys.com

Semiconductors Ltd.

not

••

Voltage code

/100

ORM

12-20

1200VV

or

disclosed except with

necessarily subject to the conditions

RRM

Chippenham, Wiltshire,

E-mail: [e-mail]

E-mail: [e-mail]

the

written

0

Fixed Code

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Tel: [phone]

Fax: [phone]

Westcode Semiconductors Inc

Long Beach

Tel:

Fax:

© Westcode Semiconductors Ltd.

SN15 1GE.

3270 Cherry Avenue

CA 90807 USA

+1

[phone]

+1

[phone]

qUALITY

EVALUATION

LABORATORY

Rating

Report:

Origin:

Written

diameter

This

This

report

by:

diode

silicon

Ratings
Voltage

V

RSM

Grades

VRRM

IF{AV} : Single

Double
Single

IF(rms)
IF

I

FSM

I

FSI'4

2

1

t

2

1

t

12t

T

HS

T t ;

s 9

THS:::

T

HS

'"

:::

10ms

t

::

10ms

t

::

10ms;

t
t 1

Omt>

t 3ms;

Operating

Non-operating

80NR14(IsSllC

2)

Diode Type SM12-1.BCXC174

Checked:

consists

slice

supersedes

phase;

Side

Coaled T HS

Side

Cooled

o

2S

C

2S(JC

half
half

T

J

T

;

J

T

J

of a diffused,

mounted

Rating

50

Hz,

THS

Double

sinelrlBvc;

sine\-JQve;
(initial
(initial)
(initial

in

Report

1800 hnlf

==

= 100°C

side

T

J

T

J

:::

125°C

:::

12SoC;

:::

125°C

Ramge

a

cold

55°C,

cooled

(ini

(

initial)

fast

weld

No.

sinel<-Jave.;

wooe

Hal)

;

Vrm

V

.

m

1

.

,

VRf·,

)

/

recovery

capsule

80NR.14.

125°C

'-

125°C

'"

;:

O.6V

10V

10V

Date:

25th

Pages:

APproved:.

24

housing.

(Converter

.

V

,

nr4

.

,

Vm·

(r·1A

rlllt1

February,

22

mm

Ratings)

O.6V

=

10V :

1

X)

1986

fJi

/J".~

..

;/fr,~d

f.~-7f~"

,:;,-----

Rm

<l(r"lAX)

v

12

..

1B

1300-1900V
1200-1800V

:

434A;

114A

870A
724A

4950A

:1.01 x 10

:1.

O

:

:"'40

202A

I

4500A

22 x l05

91

•.

x . ,

to

+150"C

l0

5 0

A'S

A2S
5A2,

Characteristics

- 2 -

(Maximum

T

Vo
r

V fr.l

J

T

J

s

:

In-1

Rth(J-HS)

t

(conditions

rr

Mounting
Ou"Uins

JEDEC

NO.

values

125°C
125°C

.-

635A

Double
Single

TJ ==125°C

IFM

= 550A

VRf>l = 50V

force

Drawing

unless

TVJ

side
side

V

rm

;

TVJ

as

above)

stated

:::

dIidt

'"

125°C

cooled
cooled

V

fHH-1(r,1/\

==

125°C

otherwise)

X)

40A/uS

150~

chord

1.0V

O.74mohm

1.47V

O.09"C/W

:O.18°C!W

20mA

value)

:160uC

330-550Kg.f
lOOA241

DO-200AA

CONTENTS

Ratings
Voltage

(2)

Introduction

(3)

Notes

(a)
(b)

(4)

Reverse
(a)

(b)

Limit

Forward
Transient
Surge

Rating
Recovered
S.

Factor
Reverse
Square
Square
Square
Square
Energy

Energy

Sine
Sine
Sine

wave
wave
vJave

wave
per
per

wave

wave

wave

Outline

and

Characteristics

Grade

on

Table

the
Square-wave
Energy

Recovery
Determinotion
Design

Characteristic

Thermol

CharC]D

recovery

frequency
frequency

Frequency

frequency
pulse
pulse

frequency
frequency
energy

drill"ing

Rntings

ratings

per

pUlf.18

loss

Method

Impedance

energy

rating
rating

rating
roting

2[]

(J

1\/

uS

100A/uS

Totinq

rating

per

pulse

- 3 -

ch;lraci:eri.:3t:ir:!l

by

Measurement

pc.r

pulse

Sink

85°C
55°C

Sink

8SoC

Sink

55DC

Sink

osoe

Sink

55()C

Sink

200A/uS

2

DUA/

uS

1

[l!JI\/

uS

1 (lOA/uS

Page

1 ,

4

5

5

5

5

6
7

8

9

10

11
12

13

14

15

1 6

17

1 8

19

2fJ

21
22

2

- 4 -

Voltage

Ratings

Voltaga

12
14
16
18

ClasG

Vum·,

V

1200
1400

1600

1800

"nSf-1

V

1300
1500
1700
1900

.

supply

This

has

Ileport

been

is

applicable

agreed

to

higher

by

Sales/Production.

or

lower

voltage

grades

when

2.0

INTRODUCTION

The

diode

all

diffused

characteristics

3.0

NOTES

(a)

Square

silicon

ON

series

with

THE

comprises
slices.
good

RATINGS

wave

ratings

"S"

- 5 -

fast

All

these

factors.

recovery

diodes

cold-weld

have

controlled

capsules

with

reverse

recovery

forward

(b)

obtained

4.0

On
voltage,
The

following

reverse

(a)

(see
reverse
waveform
evaluated

These

current

Energv

These

for

Let:

Then W

and T

REVERSE

RECOVERY

account

no

allo~lance

procedure

recovery

Determination

from waveforms
Note

recovery

be

ratings

ger

curves

conditions

Ep

be

width,

=

AV

=

S1NK

of

the

loss.

1)

and

A

joules

from:

ere

given

of

200

and

pulse

characteristics

enable

rapid

not

the

Energy

in

joules.

Ep x f.

TJ{MAX)

- W

LOSS

number

for

is

of

reverse

recommended

by Measurement

of

recovery
reverse
loss

waveform must be.

per

for

lOOA/uS

covered

per

AV

circuit

recovery

voltage
pulos.

leading

estimation

by

pulse

for a given

Rth

variables

loss

for

use

current

present
A

oe\<1

edge

linear

of

device

the

frequency

affecting

has

been

where

obtained

during
constructed.
heat

sink

rates

dissipation

ratings.

current

made

it

is

necessary

from a

recovery,

Let

temperature

of

and

reverse

in

these

high

frequency

an

instantaneous

the

area

can

rise

to

pUlse

recovery
to

then

of

be

ratings.

include

shunt

under

be

this

T

SINK

(new)

t =

A =

f =

The

where r
duration
Area
rated
total

=

t

of

under

reverse
frequency
dissipation

1.64

reverse

W(TDT) = W(original)

x

10-4~

at

is

+ Axf

recovery
loss
the

original

now

loss

v/aveform

given

heat

by

per

per

pulse
pulse
sink

+

in

microseconds

in

joules

temperature

(W.S.)

NOTE

- 6 -

1

REVERSE

This

recovery

that:

(a)

(bl

(c)

(bl

Desigo

In

conditions,
from

curves

Let

page

12)

RECOVERY

device

LOSS

has a low

current.

a.c.

coupled

affected

The

measuring

100

screen

Idithout

f·1easurcment
out

with

series

connected

Method

circumstances

or

for

on

page

E be

the

BY

MEASUREMENT

I:lhen

measuring

devices

by

prior

oscilloscope

heights

ave.rlood.

of

an

appropriate

where

design

value

of

reverse

pBssage

-

reverse

across

I

it

purposes,

eoergy

recovered

the

su~h

as
of

to

~opc

recovr:ry

snubber
diode

is

not

per

churge

current
high

has

with

possible

the

reverse

charge
care

transformers

amplitude

adequate

the

volt;J(Je
of

O.luF

anode

to

additional

cycle

must

dynamic

initial

Itwveform

cathode.

to

measure

losses

and

be

forward

and

in

peak

reverse

taken

BrB

to

not

ensure

current.

range -typically

forward

5 ohms

voltage

may

joules

should

be

(curves

current

be

in

ar,d

estimated

carried

current

on

Let f be

Then

Where T

original

the

operiJ-ting

T (nelr/) ( ) E R f

is

SINK

SINK

the

nelr!

heat

= TSINK

is
sink

frequency

original

the

required

temperature

in

Hz

- x

mnximulll

given

th

heat

vJith

x .

thr.

sink

frcq'ueocy

temperature

ratings.

and

T

SINK

- 7 -

ID
!l

1':

«

"-

!-

Z

W

cr

a::

...,

-'

U

0

:t

5:
ir

0

IJ..

en

:J

0

ill

Z

<!.

I-

Z

<!.

I-

ID

Z

H

1.0000

5000

3000

1000

500

300

.",h."

FORWARD

/

/

I

V

/

CHARACTERISTIC

250C/

V

/

/

V

/

Lt

/

OF

I

LIMIT

~

/'

~

,

DEVICE

~

--

----

--'

100

1.0

I

1.4

MAXIMUM

1.8

INSTANTANEOUS

I

2.2 2.6

FORWARD

VOLTAGE I VOLTS

3.0

t

3.4