Westcode Semiconductors M0347WC160, M0347WC250 Data Sheet

Soft Recovery Diode

M0347WC160 to M0347WC250

The

data sheet

This data reflects the old part number for this product which is: SM16-25CXC134. This part

number must

Please use the following link to view an up to date outline drawing for this device

on

the subsequent pages

of

this document is a scanned copy of existing

data for this product.

(Rating Report

90NR9 Issue 2)

NOT be used for ordering purposes - please use the ordering particulars

detailed below.

Outline

W1

Where any information

An electronic data sheet for this product is presently

For

further information on this product, please contact your local ASM or distributor.

M0347

Fixed Type Code

Typical

IXYS

Edisonstrar..e
D-68623 Lampertheim
Tel: [phone]
Fax:
E-mail: [e-mail]

Order Code: M0347WC160, 14rnrn clamp height, 1600V V

Semiconductor

[phone]

GmbH

15

on

the product matrix page differs from that

the product matrix must be considered correct

Alternatively,

please contact Westcode as detailed below.

Ordering Particulars

wc

Voltage code

Fixed

Outline Code V

RRM

16-25

E ,

An !;!IXYS Company

••

/100

E

in

the following data,

in

preparation.

Fixed Code

RRM

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN151GE.

E-mail: [e-mail]

Tel: [phone]

Fax: [phone]

0

IXYS Corporation

3540 Bassett Street

Clara CA 95054 USA

Santa
Tel:

+1

[phone]

Fax:

+1

[phone]

E-mail: [e-mail]

The

information

permission
In the

Devices

and

contained herein is confidential and is protected

of

and in

the

manner

interest

of

product improvement, Westcode reserves the right to

with

a suffix

code

limits

contained in this report.

(2-letter, 3-letter or letterfdigiUleHer combination) added to their generic code are

permitted

by

the proprietors

by

Copyright.

Westcode

www.westcode.com

www.ixys.com

The

information may not be

Semiconductors Ltd.

change

speafications

at

any time without prior notice.

used

or

disdosed

except with the written

not

necessarily subject to the conditions

Westcode Semiconductors Inc

E-mail: [e-mail]

3270 Cherry Avenue

Long Beach

Tel:

+1

Fax:

+1

©

Westcode

CA

90807 USA
(562) 595
[phone]

Semiconductors Ltd.

6971

II

Page

Issue

QUALITY EVALUATION LABORATORY

1

II

Rating
Origin:

written

24mrn

Ratings
Voltage

VRSM
VRRM

Report

Q.E.L.

by:

The

SMxxCXC134

diameter
These
This

supersedes

Grades

Single

Double

Single

No:

90NR9

.6-fI-,v?(~

B'.

Holloway

silicon

diodes

are

phase:

Side

Side

(Issue

Diode

.

.1

series

slice

particularly

90NR9

50

Hz,

Cooled

Cooled

2)

Capsule

of

housed

Issue 1 dated

180°

THS

T

HS

Type:

Checked:

diffused,

in a standard

suitable

half

= 55°C, 100°C

= 100°C

Date:
Pages:

SM16-25CXC134

Vl

~

fast

recovery

for

G.T.O.

16.5.90.

sinewave;

8th

Approved:

diodes

DO-200AA

snubber

MARCH,

26

capsule.

1993

~-"'---;:=--="'""

is

based

applications.

16 -25
1700-2600V

1600-2500V

350A;

90A

on

164A

a

Ip
IpSM

IpSM

2

t t

r

2

r

t

12t

T

HS

T

stg

THS

= 25°C

: t =

operating

:

10ms

10ms

t

10ms

10ms;

t

t

=

Non-operating

3ms;

Range

half

sinewave;

half

sinewave;

(initial)

TJ

(

initial)

T1

TJ (initial)

Double

VRM = 0.6V

VRM

side

TJ (initial)

TJ (initial)

< 10V

=

RRM

125°C;

125°C;

125°C;

cooled

(MAX)

V

RM

VRM

V

RM

125°C

l25°C

0.6V

=

< lOV

10V

<

RRM

(MAX)

690A

580A

4250A

4670A

-40

-50

to

to

+125°C

+150°C

-2-

RR.

No.

90NR9

Characteristics
(Maximum values unless otherwise stated)

Vo:

rs

:

A'T

= 25°C

. j

C:

T.

=

25°C

J

D :

T.

= 25°C

J

A

B

C

D

V"M

at

TFlIo[

=

635A

~h(J-HS)

Ip.J~,\1.

Vjf: at dl/dt =
Reverse

Q

RR

Q

RA

tIT

(2S% chord)

IRM

Mounting

Outline Drawing
JEDEC

NOTE:

Double side cooled

Single side cooled

:

at

V

VRRM(MA.,{)

400Alrs

recovery

at

IFM

diJdt
(total area)
(SO% chord)

Force

Outline No.

All

characteristics are at T V.I = T

unless stated otherwise.

=

IOOOA;

=

tp

= 200/-ls:

lSOA/~ts;

V

RM

JrllOX

=

SOV

operating

R.R. Issue

Page

Issue

L2IV

:
:

1.2mQ

: 0.S115

:

0.2148

:

9.469

-2.1073 x

:
:

-2.7312

x 10.

4

lO-2

: 1.0775
: 2.2053

xl

3

0-

:-0.14S1
:

1.97V

:

0.09KJW

:0.18KIW

:

35mA

:

37V

(typical)

:

350~lC

:

230f.!C
: 2.8/lS (typical)
:

160A

: 3.3 - 3.5

: lOOA241
: DO-200AA

(typical)

kN

2

3

-3-

R.R.No.

90NR9

CONTENTS

Ratings and Characteristics

Voltage grade table

2.

Introduction

3.

Notes

on

the Ratings

(a)

Square
Energy

(b)
(c) Housing
(d)

ABCD

wave

ratings

per

pulse characteristics

Loss

constants

( e) Reverse Recovery Ratings

4.

Reverse Recovery

Loss
(a) Determination by Measurement
(b) Design Method

Limit forward characteristic
Transient thermal impedance
Surge Rating

R.R. Issue
Page

Issue

Page

1,2

4

5

5

5
5

5

5

6

6,7

8
9

10

2
2

Forward
Recovered charge,

recovery voltage

QR.'\'

Q

RR

Reverse recovery current

K factor

per

Reverse recovery energy

pulse

Square wave frequency rating 85°C Heatsink 1000A/flS
Square

wave frequency rating 55°C Heatsink

Square wave frequency rating 85°C Heatsink

lOOOA/flS

500Al~tS

Square wave frequency rating 55°C Heatsink 500AlflS
Energy
Energy per pulse

per

pulse

1000NflS

500NflS
Sine wave frequency rating 85°C Heatsink
Sine wave frequency rating 55°C Heatsink

Sine

wave

energy per pulse

Outline drawing

Changes:
P2.

IRRM

increased to 35mA. Q

P3. Changes added. Status

'typical' added.

RR

box

added.

P26. OIL. Dwg. updated

11

12,13

14

15

16
17
18

19

20

21

22

23
24
25

26

- 4 -

Voltage

Ratings

Voltage

16

18

20
22
24
25

Clown

VnflM

V

1600
1800
2000
2200
2400
2500

V

fl~jM

V

1700
1900
2100
2300
2500
2600

supply

This

has

Report

been

is

applicable

agreed

to

by

Sales/Production.

higher

or

lower

vul

togo

gl'ol!no

wilen

2.0

Introduction

The

diode
diffused
characteristics
suitable

3.0

silicon

for

Notes

(a)

use

on

Square

series

with

the

slices.

in

G.T.O.

Ratings

wave

comprises

All

good

"K"

ratings

and

fast

these

factors.

SCR

- 5 -

recovery

diodes

snubber

have

These

networks.

capsule

controlled

diodes

devices

are

with

reverse

particularly

all
recovery

These

forward

(b)

Energy

obtained

(c)

Housing

The

gives

into

the

(d)

ABCD

These

for

the

ratings

current

per

These

Let:

Then
TSINK = TJ(MAX) -

rise

for

W

loss

to

curves

Constants

constants

forward

curves
conditions

Ep
width

AV

Loss

are

of

500

pulse

enable

be

the
in

= Ep x f

caused
additional

of

forward

characteristic

given

characteristics

Energy

joules,

by

are

for

and

1000A/uS.

rapid

not

covered

£p

x f x

coupling

heating

energy

the

co-efficients

leading

estimation

by

per

pulse

Bnd f be

Rth

between
at

high

loss

given

edge

the

for a given

the

repetition

housing

frequency)

per

below:

where

linear

of

device

frequency

and

pulse.

of

the

iF

rates

ratings.

current

anode

has

semi-empirical

instantaneous

of

dissipation

rate

current

been

rise

of

to

and

pulse

incorporated

expression

forward

be

(which

current

(e)

Reverse

(

i)

recovery

Q

is

ra

IF

1--------->------)

o

based

ratings

on

50%

I

rm

chord

t-

BS

I"

shown

below.

I

I

t,

f4

~r_r_,.___._----J_._,-+-----·;::::::;;:J:Dlc=--p::-..·

(]

ri.l

I

- 6 -

4.0

voltage,

The

following

reverse

(ii)

Reverse

On

(a)

shunt

instantaneous
the
can

TS1NK(new)

Q

rr

recovery

account

no

allowance

recovery

Determination

From

(see

area
then

is

based

i.e.

of

the

procedure

loss.

waveforms

Note

reverse
under
be

this

evaluated

= TSINK

on a 150uS

Q =

rr

loss

number

for

reverse

is

by

of

1)

and

waveform

(original)

integration

150uS

r 0

of

recommended

measurement

recovery
reverse

recovery

from:

S

circuit

recovery

by A joules

I .

r

variables

for

current

voltage

lo~>s

w;)vcforrn

AU't

( t

loss
use

.10

~ime

dt

has

where

obtained

present

per

6

affecting

been

it

from a high

during

IfItH1t

be

pulse.

made

is

com}

A new

reverse

in

necessary

recovery,

Lr'uc

sink

recovery

these

to

frequency

an

ted.

temperature

ratings.

include

Lcd;

NOTE

Reverse

current.

1

This

(a)

(b)

where

t

A

f

The
W(TOT) =

Recovery

device

When

a.c.
affected

The

screen
overload.

r

=

t

dUration

Area

under

Rated

total

measuring

frequency

dissipation

W(original)

Loss

has a low

measuring

coupled

by

heights

1.64

of

reverse

reverse

by

Measurement

reverse

the

devices

prior

oscilloscope

-

to

4

x10-

at

is

+

charge

such

passage

cope

Jt

,

recovery

loss

the

original

now

Axf

recovered

care

as
of

has

with

loss

waveform

given

mus t

current
high

amplitude

adequate

the

initial

per

pulse

per

pulse

sink

temperature.

by

charge

be

and

peak

tak(m

transf~rmers

L:D

forward

dynamic

forward

in

microseconds

in

joules

reverse

ensure

are

current.

range

current

(W.S.)

that:

not

-

typically

recovery

100

without

(c)

Measurement

appropriate
cathode.

of

reverse

snubber

of

recovery

0.1

uF,

waveform
5 ohms

should

connected

be

carried

across

out

diode

with

anode

an

to

(b)

Design

In
conditions,
from

curves

Method

circumstances

or

for

on

page

where

design

16.

it

is

purposes,

- 7 -

not

the

possible

additional

to

measure

losses

voltage

may

be

and

current

estimated

Let E be
page

16).

Let f be

Then

Where
original

the

the

value

operating

of

TS1NK\new)= TSINK

TSIN/

is

the

new)

sink

is
temperature

energy

the

per

frequency

original

required

given

reverse

in

Hz

- E x

Rth

maximum

with

cycle

x f

sink

the

in

joules

temperature

frequency

(curves

and

ratings.

on

TSINK

- 8 -

FORWARD

20

0

Or-l<-~------Y-~--'r--

, I I f i ! 1 t /1 ' I

! ! : ; ! I

! ! I I ! f \ i

Iii

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I

L._~.

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I ! i I ; i j

! I I I ! : I

'I'

• .

~

0: I :

W

~

100

~!

~

~

W

0: i

0: I I I I I ! I I ' I

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O!

t

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t-

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I

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l:-t~:d~:~L~-~-f~-

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VOLTAGE (VOLTS)

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-~.

~

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.

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~

I _ I

lac

he

7~

124~

~

2q520tE-~3

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