Fast Recovery Diode Stud
The data sheet
M0336S/RA
on
the subsequent pages
120
to M0336S/RA 140
of
this document is a scanned copy of existing
data for this product.
This data
reflects the old part number for this product which is: SM02-14PHN/R170. This
part number must
(Rating Report 86NR2
NOT be used for ordering purposes - please use the ordering particulars
Issue 2)
detailed below.
The limitations of this data are as follows:
Device no longer available for grades
Please use the following link to view
an
02
to 10 (200V to 1
up to date outline drawing for this device
Outline W23
Where any information on the product matrix page differs from that
the product matrix must be considered correct
An
electronic data sheet for this product is presently in preparation.
For further information on this product,
please contact your local ASM or distributor.
OOOV
V
)
RRM
in
the following data,
Alternatively, please contact Westcode as detailed below.
Ordering Particulars
M0336
Fixed Type Code
Fixed Outline Code
SA
RA
S/RA
Voltage Code
= Normal polarity V
= Reverse polarity
••
/100 Fixed Code
DRM
12-14
Typical Order Code: M0336SA 120, Normal polarity 3/4" glass and metal stud, 1200V V
IXYS
Semiconductor
Edisonstrar..e 15
D-68623 Lampertheim
Tel: +49
6206 503-0
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
IXYS Corporation
3540 Bassett Street
Santa Clara CA 95054 USA
+1
(408) 982 0700
Tel:
Fax:
+1
(408) 496 0670
E-mail: sales@ixys.net
The information contained herein is confidential and is protected by Copyright. The information may not be used
permission
of
and in the manner permitted by the proprietors
In the interest
Devices
and limits contained in this report.
of
product improvement, Westcode reserves the right to
with
a suffix code
GmbH
E
An
tnXYS
Westcode
(2~letter,
3-1etter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions
Company
www.westcode.com
www.ixys.com
Semiconductors Ltd.
change
specifications at any time without prior notice.
E
or
disclosed except
with
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
E-mail: WSL.sales@westcode.com
Westcode Semiconductors
Long Beach CA 90807 USA
E-mail: WSl.sales@westcode.com
the
written
0
Tel: +44 (0)1249444524
Fax: +44
(0)1249 659448
3270 Cherry Avenue
Tel:
+1
Fax:
+1
© Westcode Semiconductors Ltd.
RRM
Inc
(562) 595 6971
(562) 595 8182
QUALITY
EVALUATION
LABORATORY
Rating
Origin:
Written
under
Rating
Ratings
Voltage
Report:
86NR2
Issue
2
Diode Tvpe SM2-14PHN!R170
by~
~hu4f)~lop
The SM2-14PHN!R170
spring
Report
pressure
No. 86NR2,
Grades
diode
in a stud
is
superseded.
series
base,
employs
top
hat
a 24
housing
mm
Date:
Pages:
silicon
with
18th
22
slice
flexible
2-14
300-1500V
I 200-1400V
November, 1991
mounted
lead.
IF(AV);
I
F(;rms) max. '
Single
phase;
50
Hz,
180
0
e
half
sinewave;
TeASE
C 100
o
e:
150A
400A
400A
C
V
V
V
=
RM
RM
RM
125°C
125°C
0.6V
=
10V
~
10V
~
V
V
RRM
I
(
FSM
I
FSM
2
r
t
2
r
t
2
r
t
Te
Operating
T
t'
Non-operating
s 9
10
t
=
t = 10
10
t
=
10
t
=
t
3 ms;
half
rns
half
rns
rns;
ms; T J
Range
T
J
(initial)
T
J
sinewave;
sinewave;
(initial)
(initial)
T
J(initial)
T }
initial)
C
125°C
125°C
=
125°C
""
RM
b
RM
(MAX)
O.6V
10V
RRM
!
4950A
101 x
122 x
91 x
-40
-40
(MAX)
103A2S
1Q3
1Q3
to
to
4500A
2
S
A
2
S
A
125°C
150°C
CONTENTS
Ratings
Voltage
2.
Introduction
3.
Notes
(a)
(b)
(c)
4.
Reverse
(a)
(b)
Limit
Forward
Transient
5urge
Rating
Recovered
5.
Factor
Reverse
Square
Square
Square
Square
Energy
Energy
Sine
Sine
5ine
wave
wave
wave
wave
per
per
Wave
wave
wave
Outline
and
characteristics
grade
on
table
the
5quare
Energy
Housing
Recoverv
Determination
Design
Characteristic
Thermal
Charge
recovery
frequency
frequency
frequency
frequency
pulse
pulse
frequency
frequency
energy
drawing
Ratings
wave
ratings
per
pulse
Loss
Loss
Method
Impedance
energy
rating
rating
rating
rating
rating
rating
per
pulse
- 3 -
characteristics
by
Measurement
per
pulse
90°C
60DC
90°C
60DC
90°C
60°C
Case
Case
Case
Case
Case
Case
200A/uS
200A/uS
100A/uS
100A/uS
Page
1 ,
4
5
'5
5
5
5
6
'7
B
9
10
11
12
13
14
15
16
17
18
19
20
21
22
2
Changes
Voltage
to
86NR2
grade
(Issue
increased
1)
from
12
to
14
2.0
Introduction
The
all
diffused
recovery
3.0
Notes
(a)
diode
~haracteristics
silicon
on
the
Square
series
Ratings
wave
comprises
slices.
with
ratings
- 5 -
fast
All
good
recovery
these
US"
diodes
factors.
stud
have
based
devicMs
controlled
with
reverse
forward
(b)
obtained
(c)
gives
into
4.0
Reverse
On
voltage,
The
following
reverse
These
current
Energy
These
for
Let:
Then W
T CASE'"
Housing
The
loss
rise
the
curves
Recovery
account
no
allowance
procedure
recovery
ratings
of
per
pulse
curves
conditions
Ep
be
width
'"
Ep
AV
125
Loss
caused
to
additional
of
of
the
loss.
are
200
characteristics
enable
the
Energy
in
joules,
x f
-
Ep
by
forward
Loss
numb'er
for
reverse
is
recommended
given
and
rapid
not
x f x
coupling
heating
energy
of
for
100A/uS
estimation
covered
per
pulse
and
f be
Rth
circuit
recovery
leading
by
for a given
the
between
at
high
loss
variables
loss
for
use
edge
of
the
frequency
repetition
housing
frequency)
per
pulse.
has
where
linear
device
and
affecting
been
it
rates
disDipation
ratings.
current
rate
anode
has
been
reverse
made
is
necessary
of
rise
and
pulse
current
incorporated
:i.n
these
of
to
be
(which
recovery
ratings.
to
include
(a)
Determination
From
(see
Note
reverse
waveform
evaluated
T
CASE
where
t
duration
A
Area
f
rated
The
total
IN
(ToT)
waveforms
1)
and
recovery
bs A joules
from:
( )
new =
rt '"
1.
of
under
reverse
frequency
dissipation
W(original)
by
of
reverse
loss
T
CASE
77 x
reverse
at
Measurement
recovery
voltage
waveform
per
pulse.
..
(
orlglna
-4
-Vt
F
10
recovery
loss
waveform
the
original
is
now
given
+ Axf
current
present
must
A
1)
- A
loss
obtained
be
constructed.
new
case
(rt
( t
per
per
case
by
from a
during
recovery,
temperature
6
.1
0
+
pulse
pulse
in
in
temperature
high
an
Let
the
can
microseconds
joules
(W.S.)
frequency
instantaneous
area
under
then
be
shunt
this
Note 1
- 6 -
Reverse
recovery
Recovery
This
device
current.
Loss by Measurement
has
a low
When
reverse
measuring
the
recovered
charge
charge
care
and
p~ak
must be
reverse
taken
to
ensure
that:
(a)
a.c.
coupled
affected
(b)
The
measuring
100
screen
without
(c)
Measurement
out
with
(
(b)
diode
Design
In
circumstances
conditions,
from
curves
Let
E be
page
12).
Let
f be
anode
Method
or
for
on
page
the
the
devices
by
prior
oscilloscope
heights -to
overload.
of
reverse
an
appropriate
to
cathode.
where
design
12.
value
of
operating
such
passage
recovery
it
is
purposes,
energy
frequency
as
current
of
high
has
cope
with
snubber
not
possible
the
per
reverse
in
transformers
amplitude
adequate
the
voltage
of
O.luF & 50hms
to
additional
cycle
Hz
are
dynamic
initial
forw~rd
forward
current.
range -typically
waveform shOUld be
connected
measure
losses
in
voltage
may
joules
be
(curves
not
current
carried
and
estimated
across
current
on
Then
~here
original
TeASE
is
TeASE
the
new = TeASE
new
is
the
case
temperature
original
required
given
- ERth x f
maximum
with
case
the
temperature
frequency
and
ratings.
TeASE
(
- 7 -
FORWARD
1
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1--+--+---+--1------11---+--+--+---1-----
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--I-----+---+----\-----.lI
5000
U}
30001--+--+----\---,f-----
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Z
W
a:
IT
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U
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z
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3D
0
1---+----1--
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1----1-7<-/-
1;1------
/-Y------_~-=_
7
CHARACTERISTIC
------r------,-
----+---1----1----1-----1------
____
1--------1----+----1----1---
1-------1---
--
----~----------------I---+----------r==_____---;::::::
--,---~-~--~-~---~--~---
----
I--
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____
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--+-
OF
LIMIT
-----1------------
___
1--_
-
DEVICE
---1--------
----_1
---1---+----_
_____
----1---------1--------1----
--
__
----
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1--
____
---
-------
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~~
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_____
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------+--_
~
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_25(VV
------
-------1-----
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-+-~_JZ+-_-
--l-------j------------I----
/ -
--
__________
1---
-
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-
--
__________
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___
+-
__
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:~
____
~
----I-----i-----f----
--
---
----
----
=~-~-~-~
_
=
---
__
~
---1----.,1'-+--1------
:1
OO-l----1'----i-----'----+----'-----+----'-----+----'-----+--_-----L-_--+-_-'-
1.0
MAXIMUM
1.2
INSTANTANEOUS
--~-------
1.4
-------+------II-------I-----I---------+---+------l---------f-------
1.6
1.8
FORWARD VOLTAGE / VOLTS
2.0
2.2
__
f-------
2.4