Westcode Semiconductors M0280S200, M0280S250, M0280RX200, M0280RX250 Data Sheet

Fast Recovery Diode Stud

Types M0280S/RX200 to M0280S/RX250

The

data sheet on the subsequent pages

(Rating Report 90NR2 Issue 2)

data

of

this document is a scanned copy

for

this product.

of

existing

This data reflects

This part

number

the

old part

must

NOT be used for ordering purposes - please use the ordering

number

for this product which is: SM16-25PCN/R144.

particulars detailed below.

The

Where

limitations

Device

The

no

longer available for grades 16 & 18 (1600V &

following links will direct you to the appropriate outline drawings

Outline

W22

Outline

any information on the product matrix page differs from that in

the

product matrix

An electronic data

sheet

of

this data are as follows:

-

'%"

Ceramic stud and lug

W24

- %" Ceramic stud

must

be considered correct

for this product is presently in preparation.

For further information on this product, please contact

Alternatively, please contact

Westcode

Ordering Particulars

M0280

S/RX

1800V

the

your

local

ASM

as detailed below.

••

V

)

RRM

following data,

or distributor.

0

Fixed Type

Code

Typical

IXYS Semiconductor GmbH

Edisonstraf),e 15
0-68623
Tel: [phone]
Fax:
E-mail: [e-mail]

IXYS Corporation

3540 Bassett Street
Santa Clara
Tel:

Fax:
E-mail: [e-mail]

The
permission

In the interest

Devices with a suffix code (2-le«er, 3-letter
and limits contained

Order

Lampertheim

[phone]

+1

[phone]

+1

[phone]

information contained herein is confidential and is protected by Copyright. The information

of

and in

of

Code: M0280SC200, Normal polarity %" Ceramic stud,

CA

95054

USA

the

manner permitted by the proprietors

product improvement,

in

this report.

S/RC - %"

S/RJ -

Westcode

'%"

reserves the right to change specifications

or

letter/dlgitlletter combination) added

Ceramic

Ceramic

An IEIIXYS

Westcode

Semiconductors Ltd.

stud and lug

Company

www.westcode.com

stud

Voltage code

Te

www.ixys.com

may

not be used or

at

any time without prior notice.

to

their generic code are not necessarily subject

disdosed

V

/100

RRM

20-25

E

except with

to

the conditions

Fixed

Code

2000V

the

V

RRM

Westcode Semiconductors Ltd

Langley Park Way. Langley Park,

Chippenham, Wiltshire, SN15 1GE.

E-mail: [e-mail]

E-mail: [e-mail]

written

Tel: [phone]

Fax: [phone]

Westcode Semiconductors

3270 Cherry Avenue

Long Beach

© Westcode Semiconductors Ltd.

Tel:

Fax:

+1
+1

CA

90807
[phone]
[phone]

Inc

USA

Page

QUALITY EVALUATION LABORATORY

Issue

1

Rating
Origin:

Written

silicon

diodes

2.8.90.

Ratings
voltage

Ip(AV)

Report

The

are

This

Single

Q.E.L.

by:

pCNjR144

slice

particularly

supers

Grades

phase:

No:

90NR2

stud

series

mounted

ides

Based

under

90NR2

50

(Issue

of

suitable

Hz

1800 half

Diode

Checked:

fast

spring

Issue

2)

Type:

recovery

pressure

for

1

SM16-25PC/H

M

diodes

use

in

dated

sinewave;

Date:

Pages:

g.Jce..r

are

in a study

G.T.O.

14.2.90

based
snubber
and

TCASE

8th

N/R144

Approved:

base

90NR4

100°C

March,
27

on a 24

housing.

networks.

Issue

1993

lAI!'<::---_~

"'---

mm

diameter

These

1

dated

16 -25

l700-2600V

1600V-2500V

123A

I Perms)

Ip

IpSM : t

r

I

I

r

TCASE
T

max.

pSM

2

t t

2

t

2

t t

:

stg

max.

Operating
Non-operating

400A

400A

=

<
<

O.

125"C

125°C

6V

10V

10V

RRM

(MAX)

4500A

4950A

-40

-40

to
to

125°C
lSO"C

lams

half

sinewave;

V

RM

t

lams

half

sinewave;

VRM

10ms

T

(initial)

J

t

10ms;

=

3ms;

T

J

T

J

Range

(initial)

(initial)

TJ (initial)

=

O.

6V

T

J

< 10V

125°C;

'"

12

125°C;

(MAX)

RRM

(initial)

SoC;

V

V

V

RM

RM

RM

Characteristics

(Maximum

values

unless

otherwise

- 2 -

stated)

R.R.
R.R.
Page

No.
Issue
Issue

90NR2

2
1

l.28V

rs

A T

B

C T

D T

TJ

25°C

J

25°C
25°C

J

25°C

J

A

B

C

D

~h(J-C)

~h(C-HS)

IRRM

Vfr

Reverse

:

at

at

dI/dt

recovery

VRRM(MAX)

470A

=

400A/~S

at

IFM =

1000A;t

p

=

200~s

0.92mohms

0.1805148

0.2223172

9.24871

-1.399568

1.

71V

0.13

K/W

0.04

K/W

20mA

SlV

typical

x 10-4

x 10-

2

QRR

(total

QRA

(50%

trr

(50%

Mounting
Outline

JEDEC
NOTE:

area)

chord)

chord)

Torque

Drawing

Outline
All

characteristics

unless

No.

stated

diR/dt

are

otherwise.

=

lS0A/

at

uS

TVJ

i V

RM

TJmax

=

SOV

Type

Type
Type
Type

operating

PCN/R
PHN/R

PCN/R

PHN/R

730~C

342~C

2.

8~S

Typical

26SA

14

Nm

24.S-27Nm
100A297
100A280

- 3 -

R.R.
R.R.
Page

No.

Issue
Issue

90NR2
2

1

CONTENTS
Ratings
Voltage

2.

Introduction

3.

Notes

(a)
(b)
(c)

(d)
(e)

4.

Reverse

(a)
(b)

Limit

forward
Transient
Surge

rating

and

characteristics

grade

on

table

the
Square
Energy
Housing

ABeD

Reverse

Recovery
Determination
Design

characteristic

thermal

Ratings

wave

per

pulse

Loss

constants

Recovery

Method

impedance

ratings

Loss

by

characteristics

Ratings

Measurement

Page

1,

4

5

5

5

5

5

5

6
7
8
9

10

2

Forward
Recovered
Reverse
K

factor

Reverse

Square
Square
Square
Square
Energy
Energy
Sine

wave

Sine

wave

Sine

wave

Outline

recovery

charge

recovery

recovery
wave
wave
wave
wave
per

pulse

per

pulse
frequency
frequency
energy

drawing

voltage

current

energy
frequency
frequency
frequency
frequency

per

rating
rating
rating
rating

rating

rating

pulse

per

pulse

12,

26,

11

13

14
15
16
17

18
19
20
21
22
23

24
25

27

- 4 -

Voltage

Ratings

Voltage

16

18
20
22
24
25

ClasD

.

V

rlflN

V

1600

1800

2000
2200
2400

2500

V

IISM

V

1700
1900
2100
2300
2500
2600

supply

This

has

Report

been

is

sppliceb18

agreed

to

by

Sales/Production.

higher

or

10l-18r

vol

Logo

UI'odrw

vJllUll

2.0

Introduction

The

diode
dillused
characteristics
suitable

3.0

silicon

lor

Notes

(a)

use

on

the

Square

series

slices.

with

in

Ratings

wave

comprises

good

G.T.O.

ratings

All
"K"

and

last
these
factors.

SCR

- 5 -

recovery

diodes

snubber

have

These

networks.

stud

controlled

diodes

based

are

devices

reverse

particularly

with

recovery

all

These

lorward

(b)

Energy

These

obtained

Let:

Then

T

(c)

Housing

The
gives
into

the

(d)

ABCD

These
lor

the

V F

current

CASE

rise

forward

==

ratings

per

curves

lor

conditions

Ep
width

W

AV

==

TJ(MAX) - Ep x f x
Loss

loss

to

curves

Constants

constants

A + B

are

01400

pulse

enable

be

the
in

joules,

==

Ep x 1

caused
additional

01

forward

characteristic

In

IF

characteristics

Energy

by

are

+ C I

given
and

lor

800A/uS.

rapid-estimation

not

covered

per

and f be

coupling

heating

energy

the

co-ellicients

given

+ D

F

leading

by

pulse

Rth

between

at

high

loss

JI;

edge

01

device

the

lrequency

lor a given

the

repetition

housing
lrequency)

per

pulse.

of

below:

linear

dissipation

current

rate

and

has

the

semi-empirical

rates

ratings.

anode

been

01

rise

and

pulse

current

incorporated

01

to

be

(which

expression

(e)

Reverse

( i )

Q

iFt-----">..

recovery

is

ra

based

ratings

on

50% I

Q

ra

rm

Irr

chord

as

shown

below

4.0

voltage,
The

following

reverse

(ii

)

Q

rr

Reverse

On

(a)

shunt

instantaneous
the
can

recovery

account

no

allowance

recovery

Determination

From

(see

area

then

is

based

i.

e.

Q

of

the

procedure

loss.

waveforms

Note

reverse
under
be

this

evaluated

rr

loss

number

for

1)

on

a

150

of

reverse

is

recommended

by

measurement

of

recovery

and

reverse

recovery

waveform

from:

- 6 -

uS

integration

I

•

dt

r

circuit

recovery

for

current
voltage
loss

by A joules

variables

loss
use

where

obtained

present

waveform

per

time

has

must
pulse.

affecting

been

made

it

is

from a high

during

be

reverse

in

these

necessary

recovery,
constructed.
A

new

case

recovery

ratings.

to

include

frequency

an

Let

temperature

NOTE

Reverse

This

current.

t

duration

A

Area

f

rated

The

total

W(TOT)

1

Recovery

device

(a)

(b)

(c)

where

When
a.c.

affected

The
screen
overload.

Measurement
appropriate
cathode.

r

t

of

under

frequency

dissipation

W(original)

Loss

has a low
measuring

coupled

measuring

heights

=

1.77 x 10

reverse

reverse

by

Measurement

devices

by

prior

oscilloscope

of
snubber

recovery

loss

at

the

is

+

reverse
the

charge

passage

-

to

reverse

-4

.

waveform

original

now

Axf

recovered

such

cope

recovery

of

O.luF,

Jt;

given

care
as

of

with

loss

current
high

has

per

per

case

by

charge

must

amplitude

adequate

the

initial

waveform

5.

ohms

pulse

pulse

temperature

be

transformers

connected

in

in

and

taken

dynamic

forward

should

microseconds

joules

peak

to

forward

(W.S.)

reverse

ensure

are

current.

range -typically

current

be

carried

across

recovery

that:

not

diode

without

out

anode

with

100

an

to

(b)

Design

In

QQndltlQn~,

from

turves

Method

circumstances

or

on

for
pages

where

~eaign

purposes,

1S.

it

is

not

possible

the

additional

to

measure

losses

voltage

may

be

and

current

estimated

- 7 -

Let E be

page

Let f be

Then
Where

original

16.

TeASE

TeASE

is

the

the

the

new =

case

value

operating

TeASE

new

is
temperature

of

the

energy

per

frequency

original
required

given

reverse

in

Hz

- ERth x f
maximum

with

case

the

cycle

temperature

frequency

in

joules

ratings.

(curves

and

TeASE

on

- 8 -

10000

(fl

w

a:

w

a.

::E

4:

J..:'

z

w

a:
a:

:J

CJ

~ooo

4:

l!:
II

o

U.

00

:J

o

W

Z

4:

I-

Z

I-

'"

00

Z

H

FORWARD

CHARACTERISTIC

l/

/

/

/

:1

II

V

V

/

2S

V

OF

c

LIMIT

C

~

V

~

DEVICE

-.-

:,...--

:,...--

'/

'/

A

'"

0.1805148

B

'"

0.2223172

C

""

9.24871E-04

o

'"

-1.399568E-2

,.-;

,.-;

V

i---""

l-

~

c-

100

0.5

0.9

'/

/

1.3

MAXIMUM

1.7

FORWARD

2.1

VOLTAGE

2.5

(VOLTS)

:L9

3.3