Westcode Semiconductors M0268S200, M0268S250, M0268RX200, M0268RX250 Data Sheet

Fast Recovery Diode Stud

Types M0268S/RX200 to M0268S/RX250

The

data sheet on the subsequent pages

(Rating Report 90NR1 0 Issue 2)

This

data reflects the old part

This part

number

must

NOT be used for ordering purposes - please use the ordering

of

this document is a scanned copy

data

for

this product.

number

for

this product which is:

particulars detailed below.

of

existing

SM16-25PCN/R

134.

Where

For

further information on this product, please contact

M0268

Fixed Type

Code

The limitations

Only S/RC outline drawing 0N22)

Some

Device no longer available

The following links will direct you

Outline

W22

Outline

of

this data are as follows:

in

datasheet

reverse recovery data missing

for

grades

- W'

W24

16 & 18 (1600V &

to

the appropriate outline drawings

Ceramic

-

%,"

stud and lug

Ceramic stud

1800V

V

RRM

)

any information on the product matrix page differs from that in the following data,

the

product matrix

An electronic data sheet

Alternatively, please contact

must

be considered correct

for

this product is presently

Westcode

in

preparation.

your

local

ASM

as detailed below.

or

distributor.

Ordering Particulars

S/RX

S/RC -

S/RJ - %" Ceramic stud and lug

%,"

Ceramic stud

••

Voltage code

VRRM/100

20-25

Fixed

0

Code

Typical

IXYS Semiconductor GmbH

Edisonstrar:>.e

0-68623 Lampertheim

Tel:

Fax:
E-mail: [e-mail]

IXYS Corporation

3540 Bassett Street
Santa
Tel:
Fax:

E-mail:

The

permission

the

In

Devices
and

Order

[phone]

[phone]

Clara CA 95054 USA

+1

[phone]

+1

(408) 496 0670

[e-mail]

information contained herein

of

and

interest

of

with a suffix code (2-letter, 3-1etter

limits

contained

Code: M0268SC200, Normal polarity %" Ceramic stud,

15

in

the

manner

product

improvement,

in this

report

is

confidential

permitted

and

is

protected

by

the proprietors

Westcode

reserves the right

or

letter/digiUleHer combination)

E ,

An EiIXYS Company

www.westcode.com

www.ixys.com

by

Copyright.

The

Semiconductors

change

specifications

added

information

Ltd.

to

their

generic

at

Westcode

to

may

any

not

be

time

code are

E

used

or

disdosed except

without

prior

notice.

not

necessarily subject to the conditions

with

2000V

the

written

V

RRM

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

E-mail: [e-mail]

E-mail:

Tel: [phone]

Fax: [phone]

Westcode Semiconductors Inc

3270 Cherry Avenue

Long Beach

Tel:

+1

Fax:

+1

[e-mail]

©

Westcode

CA 90807 USA
(562) 595
[phone]

Semiconductors

6971

Ltd.

II

Page

QUALITY EVALUATION LABORATORY

Issue

1

Rating
Origin:

Written

a

24

Ratings
Voltage

Ip(AV)

IP(nns)

Report

Q.E.L.

by:

The

SMxxPCN/R134

rom

diameter

These

This

supersedes

Grades

Single

max.

No:

90NR10

stud

V\

~9VV

M.

Baker

are

50

series

mounted
particularly
90NRlO

Hz

silicon

diodes

phase:

(Issue

Based

(Issue

180°

2)

Diode

Checked:

of

diffused,

under

half

SM16-25PCN/R134

t-1.T.

fast

spring

suitable

1)

sinewave;

to

dated

Date:
Pages:

fa

re

pressu

use

28.6.90.

TCASE

in

4th

. ,

Approved:

G.T.O.

March,

26

diodes

a

stud

snubber

1993

-ID-·----;:;::=-

are

based

base

housing.

networks.

16-25

1700-2600V

1600-2500V

l20A

400A

on

IF

max.

IpSM : t

I2t

I2t

I2t t

T

T

CASE

stg

:

Operating

Non-operating

400A

10ms

half

sinewave;

VRM = 0.6V

t

10ms

half

sinewave;

10ms

t

10ms;

t

3ms;

=

(initial)

TJ

(initial)

TJ

TJ (initial)

Range

TJ (initial)

TJ (initial)

l25°Cj

=

125°C;

125°C;

RRM

(MAX)

V

RM

V

RM

V

RM

125°C

125°C

=

0.6V

< 10V

10V

<

RRM

(MAX)

4250A

4670A

-40

-40

to

to

+12S0C

+ lSO°C

Characteristics

(Maximum

values

unless

otherwise

- 2 -

stated)

R.R.
R.R.
Page

No.

Issue
Issue

90NR10
2
1

1.21V

rs
A

B

C

D T

TJ

TJ

T

25°C

25°C

25°C

J

25°C

J

A

B

C

D

~h(J-C)

Rth(C-HS)

IRRM

Vfr : at

Reverse

at

dI/dt

recovery

470A

VRRM(MAX)

=

400A/pS

at

IFM = 1KAitp = 200ps

1.2mohms

0.5115

0.2148

9.468

x

-2.1073

-2.7312

1.0775

2.2052

-0.1451

1.

77V

0.13

K/W

0.04

K/W

20mA

37V

(typical)

x

x

10-4

10-

10-

2

3

QRR

(total

QRA

(50%

trr

(50%

IRM

Mounting
outline
JEDEC
NOTE:

area)

chord)

chord)

Force

Drawing

Outline

All

characteristics

unless

No.

stated

are

otherwise.

at

TV}

TJmax

50V

operating

350pC

230pC

2.8J1S

160A

14Nm
100A297

(typical)

CONTENTS

- 3 -

Ratings
Voltage

2.

Introduction

3.

Notes

(a)
(b)
(c)
(d)

(e)

4.

Reverse

(a)

(b)

Limit

forward
Transient
Surge

Rating
Forward
Recovered
Reverse

K.factor

Reverse

Square

Square
Square
Square
Energy
Energy
Sine

wave

Sine

wave

Sine

wave

Outline

and

characteristics

grade

on

the
Square
Energy

table

wave

per
Housing
ABCD

constants

Reverse

Recovery.Loss

Detel'II11nation
Design

Method

characteristic

thermal

recovery

charge

recovery

recovery

wave

frequency

wave

frequency

wave

frequency

wave

frequency

per

pulse

per

pulse
frequency
frequency

energy

drawing

Ratings

ratings

pulse

Loss

Recovery

impedance

voltage

current

energy

rating
rating

1'0.

rating
200A/uS
400A/uS

ratin~

rating

per

pulse

characteristics

Ra

tings

by

Measurement

per

pulse

90°C
60°C

tine

90°C

60°C

90°C
60°C

Case
Case
Case
Case

Case
Case

SOOA/uS
SOOA/uS
400A/uS

400A/uS

1,

2

4

5

5

5

5

5

5

6

(it

'7

8

9

10

11

12 & 13

14

IS

16

17

18

:l!J

20

21

22

23

24

25

26

- 4 -

Voltage

RiJcings

Vol

tsgs

16

18
20
22
24
25

Cl<:lD!l

V

mll'l

V

1600
1800

2000
2200
2400
2500

V

nSr

V

1700
1900
2100
2300
2500
2600

'

1

supply

This

has

Report

been

is

agreed

applicable

by

Sales/Production.

to

higher

or

lovler

volLago

grodr~o

VlIIUTl

2.0

Introduction

The
diffused
characteristics
suitable

3.0

Notes

(a)

diode
silicon

for

on

Square

use

the

sel'ies

slices.

with

in

RatinRs

wave

comprises

good

G.T.O.

ratini!2.

All

"K"

and

fast
these
factors.

SCR

recovery

diodes

snubber

have

These

networks.

stud

controlled

diodes

b(l!::ccl

are

device!,

reverse

particularly

wi

th

recovery

nJ.l

These

forward

(b)

These

obtained

Then

(c)

Ilousing

The
E',ives
into

(d)

ABCD

These
for

the

current

Energy

for

Let:

\tJI\V = Ep x f

loss

rise

the

curves

Constants

forward

ratings

of

per

pulse

curves

concli

Ep

be

width

Loss

caused

to

additional

of

constants

characteristic

are

400

enable

tions

the
in

forward

Energy

joules,

by

are

given

and

clwracteristics

for

SOOA/uS.

rapid

not

covered

per
and f be

coupling

heating

energy

the

co-efficients

estimation

given

leading

pulse

between
at

loss

edge

of

by

the

for a given

the

repetitj.on

housing

high

frequenc:i)

per

below:

linear

device

frcqur'llcy

and

pul!3E'.

of

the

rates

dissivation

riJ

current

rate

anode

has

semi-empirical

ti

been

of

Ilgr-;.

and

current

rise

of

La

be

pulse

(which

incorpornted

expression

(e)

Reverse

(i)

IF

;-----_

o

Q

ra

recovery

is

based

..

ratings

on

50% I

rm

chord

as

shown

below

- G -

4.0

'1'118

following

reverse

(ii)

(iii)

Reverse

Orr

K

Recovery

recovery

(t)

Determination

From

shunt

(see

instantaneous

l:he

al'ca

can

then

where

is

based

1.

e.

Q

factor

procedul'c

loss.

waveforms

Note

reverse
under
be

evaluated

r t =

rr

1)

this

1.

Loss

77

on a 150

is

I'CCOll1ll1endcd

by

measurement

of

recovery

and

reverse

recovery

waveform

from:

-4

x

10

uS

integration

.

I

r

for

current
voltage
loss

by A joulcs

.

Jt

dt

use

present

waveform

time

wlll';'I'

obtained

per

:i.

during

1I11.]f; t

pul:';c.

L.

l,;

nccf'f.:n;.1['Y

from

be

cOnf·,tructed.

A

Rth

3 II

igh

recovery,

new

case

x

f)

)

1,0 Llle

f['(~quDncy

Iud"

an

f.,C] t

tempqra

tUf'e

NOTE 1

Reverse

This

current.

t

duration

A

Area

f

rated

The

total

\1)(TO'l')

RECovel'y

device

(a)

(b)

~c

When
a.c.

affected

The

screen

of

reverse

under

reverse

frequenc::

dissipation

W(original)

Loss

by

has a low
measuring

coupled

by

measul'ing

heights

overload.

(c)

['ij'-'~lsul'emcl1l;

appr'opriate
cathode.

;'ecovery

loss

a t

the

is

Me8surcment

reverse

the

charge

devices

prior

passage

oscilloscope

-

to

o[

rcvcr'~c;c

snubber

ol'iginal

now

AxC

such

cope

of

loss

waveform

given

recovered

care
as

of

has

\vi

th

l'ccovery

0.1uF,

per

C3se

by

must

current

high

adequate

the

\'IQve[onn

50hll1:-3

per

pul~,"~

pulse

in

l:empcr,rture

charge

and

be

taken

transf~rmers

amplitude

dynamic

initial

forward

f;I](Juid

conr:f'ct:cd

in

microseconds

joules

peak

reverse

to

ensure

f~rward

range

1)('

acrOf3S

(W.S.)

are

current.

current

c;JrTjed

that:

not

-

typically

diode

recovery

wi

thout

out:

anode

wiLh

100

iHI

to

(ii)

Design

In

conditions,

from

curves

Mp.thod

circumstances

or

for

on

pages

where

design

16.

it

is

purposes,

not

possible

the

additional

to

measure

losses

voltage
may

be

and

current

estimated

- 7 -

Let E be

page

16).

Let f be

Then TCASE(new) = T
Where

original

TCASE(new)

is

the

the

the

case

value

of

operating

CASE

is

temperature

energy

frequency

original

the

required

per

given

reverse

in

Hz

-E x

Rth

maximum

with

cycle

case

the

in

x f

temperature

frequency

joules

ratings.

(curves

and

T

on

CASE

- 8 -

FORWARD

200

m-

~

100-

-----r--------r-Il··

T----

:-,_trt-l~,_/_'~2r~1-

~-~-ll-~-p

3 -

o

II

<t:
3:

II

a

lL

50

(ll

::J

o

IJJ

Z

<t:

I-

Z

<t:

I-

en

z

H

-----

--------

--

-

-

..

~-----.-

CHARACTERISTIC

T-----l-

-..

-----

------

--

b- A

--I,

t .

---/+--

/ I

I

---

~~-~-

~---~-".--

I

----

OF

---

-k/

;--r

--

,----1------------

-

--i---r------i

L-i----

.-

~-l~

J:J._

~

C

~

. T

oj----t-i9732k12-1

LIMIT

DEVICE

--,-------l

7

~

-1----

...J=~=~~--=

-------I----------r----l

1

i~~

21..

~.4

82_8_

761~E-d4

'-----

-II

!

I

I

200+----

I C

I 0

I!

-

-1-------1-------

1

.6

MAXIMUM FORWARD VOLTAGE (VOLTS)

2

,-

1="

---1---

2.4

f .

I ! ! I I

-l

I I I i I

-----

---~--------

520

29

14~

14

--I--------f--------~-----~

2.8

fE

7B

-9

3.2

3

I