Maximum average forward current, T
Maximum average forward current. T
Maximum average forward. T
Nominal RMS forward current, T
D.C. forward current, T
Peak non-repetitive surge tp=10ms, VRM=60%V
Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)
2
t capacity for fusing tp=10ms, VRM=60%V
I2t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Operating temperature range-40 to +150°C
Storage temperature range-40 to +150°C
sink
=100°C, (note 3)89A
sink
=25°C, (note 4)365A
=55°C, (note 2)225A
sink
=100°C, (note 2)147A
sink
=25°C, (note 2)421A
sink
, (note 5)2000A
RRM
, (note 5)20.0×10
RRM
Data Sheet Issue:- 1
MAXIMUM
LIMITS
MAXIMUM
LIMITS
2200A
3
24.2×10
3
UNITS
UNITS
A2s
A2s
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 150°C T
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1Page 1 of 11June, 2004
initial.
j
below 25°C.
j
WESTCODE
WESTCODE An IXYS CompanySoft Recovery Diode Types M0225YH300 to M0225YH450
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Characteristics
PARAMETERMIN.TYP.MAX. TEST CONDITIONS (Note 1)UNITS
V
V
r
V
I
Q
Q
I
t
R
FM
T0
T
FRM
RRM
rr
ra
rm
rr
thJK
Maximum peak forward voltage
Threshold voltage--1.90V
Slope resistance--4.16
Maximum forward recovery voltage
Peak reverse current--50Rated V
Recovered charge-220-µC
Recovered charge, 50% Chord-100130µC
Reverse recovery current-70-A
Reverse recovery time, 50% Chord-3-
Thermal resistance, junction to heatsink
--4.54IFM=635A
--3.80I
=450A
FM
--200di/dt = 1000A/µs, 25°C
--400di/dt = 1000A/µs
RRM
I
=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
FM
50% Chord.
--0.1Double side cooled
--0.2Single side cooled
V
mΩ
V
mA
µs
K/W
FMounting force3.3-5.5kN
W
Weight-140-g
t
Notes:-
1) Unless otherwise indicated T
=150°C.
j
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1Page 2 of 11June, 2004
WESTCODE
WESTCODE An IXYS CompanySoft Recovery Diode Types M0225YH300 to M0225YH450
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of VF characteristic in Figure 1) are the
coefficients of the expression for the forward characteristic given below:
where IF = instantaneous forward current.
RRM
(V)
V
RSM
(V)
V
dc
R
(V)
IDICIBAV⋅+⋅+⋅+=)ln(
FFFF
4.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.
(ii) Qrr is based on a 150µs integration time.
I.e.
(iii)
s
µ
150
=
FactorK=
rrrr
∫
0
dtiQ
.
t
1
t
2
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1Page 3 of 11June, 2004
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f
WESTCODE An IXYS CompanySoft Recovery Diode Types M0225YH300 to M0225YH450
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5.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery
loss.
From waveform s of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new sink tem per ature c an then
be evaluated from:
)(
Where k = 0.2314 (°C/W)/s
E
= Area under reverse loss waveform per pulse in joules (W.s.)
= Rated frequency in Hz at the original sink temperature.
R
= d.c. thermal resistance (°C/W)
thJK
The total dissipation is now given by:
originaltot
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered char ge and peak revers e recovery current. W hen m easuring
the charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring
oscilloscope to avoid overloading the internal am plif ier s by the relatively high am plitude f or ward c urr ent
signal.
)()(
[]
fEWW
⋅+=
RfkETT⋅+⋅−=
thJKMAXJSINK
(c) Measurement of reverse recovery waveform s hould be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. T he formula used for the calculation of
this snubber is shown below:
2
R
Where:Vr= Commutating source voltage
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of
snubber capacitor or exces sively small values of s nubber resistor. Such excess ive component values
may lead to device damage due to the large resultant values of snubber discharge current. If required,
please consult the factory for assistance.
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1Page 4 of 11June, 2004
V
⋅= 4
C
R = Snubber resistance
r
di
C
⋅
dt
S
= Snubber capacitance
S
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