Westcode Semiconductors M0139S120, M0139S180, M0139RX120, M0139RX180 Data Sheet
Fast Recovery Diode Stud
Types M0139S/RX120 to M0139S/RX180
The data sheet
This data reflects the
on
the subsequent pages of this document
old
This part number must NOT
The
Only S/RM
The following links will direct you to the appropriate outline drawings
Outline W20 - M12 Ceramic stud + lug
Where any information
on
the product matrix must be considered correct
An electronic data sheet for this product
For further information
Alternatively, please contact Westcode
is
a scanned copy of existing
data for this product.
(Rating Report 83NR3 Issue
2)
part number for this product which is: SM12-18PHN/R1 00.
be
used for ordering purposes - please use the ordering
particulars detailed below.
limitations of this data are as follows:
outline drawing (W21)
Outline
W21
- 3/8" Ceramic stud
the product matrix page differs from that
on
this product, please contact your local ASM or distributor.
in
is
presently
as
datasheet
in
the following data,
in
preparation.
detailed below.
Ordering Particulars
An
S/RX
stud
iIXYS
Company
www.westcode.com
www.ixys.com
••
Voltage code
V
/100 Fixed Code
RRM
12-18
disdosed
except
wilh
the written
Chippenham,
E~mail:
M0139
Fixed Type
Typical
IXYS
Semiconductor
Edisonstralle 15
D~68623
Tel: +49 6206
Fax: +49 6206
E~mail:
marcom@ixys.de
IXYS
Corporation
3540 Bassett Street
Santa Clara
Tel:
+1
(408) 982 0700
Fax
+1
(408)
E~mail:
saies(Q)ixYs.net
The information contained herein is confidential and is protected by Copyright. The information may no! be used or
permission
of
In the interest
Devices with a suffix code (2-letter, 3-1etter or letter/digilfletter combination) added to their generic code are not necessarily subject to the conditions
and limits contained in this
Code
Order Code: M0139SM120, Forward polarity, 3/8" Ceramic stud, 1200V V
------------.-----~------------------------------------------------------~
GmbH
Lampertheim
503~0
503~627
CA 95054 USA
4960670
and in the manner permitted by the proprietors West code Semiconductors Ltd
of
product improvement,
report
S/RL - M12 Ceramic stud + lug
S/RM - 3/8" Ceramic
Westcode
reserves the right to change specifications at any time \"Iithout prior notice.
0
RRM
Westcode
Langley Park Way, Langley Park,
Westcode
E~mail:
Semiconductors
Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44
WSL.sales@westcodecom
Long Beach
WSl.sales(Q)westcode.com
(0)1249 659448
Semiconductors
3270 Cherry Avenue
CA
Tel:
Fax:
©
Westcode
90807 USA
+1
(562) 5956971
+1
(562)
Semiconductors
5958182
Ltd
Inc
Ltd
Page
Issue
QUALITY AND EVALUATION LABORATORY
1
Rating
origin:
written
pressure
Ratings
voltage
VRRM
IF(AV)
IF(rms)
Report
The
This
Single
max.
Q.E.L.
by:
B.
series
in a stud
Report
Grades
phase:
TeASE
(T
CASE
No:
stud
Holloway
is
supersedes
72°C)
83NR3
Based
based
base
50
0=
100°C
Issue
Diode
on a 19
housing
Hz
180°
Housing
2
Type
83NR3
half
limited
SM12-18PHN/R100
rom
Issue
diameter
flexible
1.
with
sinewave;
Date:
Pages:
slice
lead.
(Converter
18th
23
mounted
Ratings)
January,
under
12 -18
1300-1900V
1200-1800V
: 58A
175A
1994
spring
IF
max.
IFSM : t
IFSM
2
1
t
2
1
t t
2
1
t
TeASE
T~g
Operating
:
Non-operating
(T
t
t
t
CASE
0=
=
48°C)
10ms
lOms
10ms;
10ms;
3ms;
half
half
T
J
T
J
T
J
sinewave;
V
RM
sinewave;
VRM < 10V
(initial)
(initial)
(initial)
=
0.6V
TJ (initial)
(MAX)
RRM
TJ
(initial)
125°C;
12
SoC
i
V
12SoC;
V
V
RM
RM
RM
0=
<
<
125°C
l25°C
O.
10V
10V
6V
RRM
(MAX)
Range
175A
2450A
2700A
-40
-40
to
to
o
+12S
+lSO°C
C
-2-
R.R
No. : 83NR3IPHNIRIOO
RR
Issue : 2
Page Issue : 2
Characteristics
) IFM < 500 A :
)
A : T
=
25°C
J
B : T
=
25°C
J
C : T
=
25°C
J
D : T
=2SOC
J
A : Constant
B : In(iF)
C :
iF
D
:"
iF
V
at
IFM = 280 A
FM
~h(J-C)
~(C-HS)
lRRM: at
VRRM(MAX)
(Maximum values unless otherwise stated)
IFM
> 500 A
)
)
1.24
l.28
1.6 V
0.3 KlW
: 0.08
:
20mA
V : 1.46 V
mQ
: 0.8
K.JW
mO
V!'r
: at dl/dt = NJls
Reverse recovery at
diR/dt = 100 NJls; V
QRR (total area)
Q
(50% chord)
RA
(50%
trr
IRM
Mounting Torque
Outline
JEDEC
chord)
Drawing
Outline
No.
rpM
= 1000 A;
NOTE: All characteristics are at T
~
RM
= 500
= 50 V
Jls
:
: lO0A294
:
VJ
= TJrnax operating unless stated otherwise.
11
Nm
DO-8
- 3 R.R.
R.R.
Page
No.
Issue
Issue
83NR3
2
1
CONTENTS
Ratings
Voltage
Introduction
2.
3.
Notes
(a)
(b)
(c)
(d)
(e)
4.
Reverse
(a)
(b)
Limit
forward
Transient
Surge
rating
and
characteristics
grade
on
table
Ratings
Square
Energy
Housing
ABCD
Reverse
Recovery
Determination
Design
characteristic
thermal
wave
per
Loss
constants
Recovery
Method
impedance
ratings
pulse
Ratings
by
characteristics
Ratings
Measurement
Page
1,
4
5
5
5
5
5
5
6
7
8
9
10
2
Recovered
S
factor
Reverse
Square
Square
Square
Square
Energy
Energy
wave
Sine
wave
Sine
Sine
wave
Outline
charge
recovery
wave
wave
wave
wave
per
pulse
per
pulse
frequency
frequency
energy
drawing
energy
frequency
frequency
frequency
frequency
per
rating
rating
rating
rating
rating
rating
pulse
per
pulse
11
12
13
14
15
16
17
18
19
20
21
22
23
- 4 -
R.R.
R.R.
page
No.
Issue
Issue
83NR3
2
1
Voltage
Ratings
Voltage
12
14
16
18
Class
V
RRM
V V
1200
1400
1600
1800
V
1300
1500
1700
1900
RSM
1.
2.
This
Report
has
been
A
blocking
applicable
is
agreed
voltage
to
applicable
by
sales/Production.
derating
this
device
to
for
higher
factor
TJ below
or
of
lower
0.13%
25°C.
voltage
per
deg.
grades
Celsius
when
is
supply
- 5 -
R.R.
R.R.
Page
No.
Issue
Issue
83NR3
2
1
2.0
diffused
characteristics
in
3.0
INTRODUCTION
The
silicon
G.T.O.
NOTES
(a)
(b)
Let:
Then
T
(c)
diode
and
Square
These
forward
Energy
These
obtained
CASE
Housing
The
series
with
SCR
ON
THE
ratings
curves
Ep
in
WAY
= TJ(MAX) -
loss
gives
incorporated
rise
slices.
good
snubber
RATINGS
wave
current
per
pulse
for
be
the
joules,
=
Ep
Loss
caused
to
comprises
All
"K"
networks.
ratings
are
of
characteristics
enable
conditions
Energy
and f be
x f
Ep
x f x
by
additional
into
fast
these
factors,
given
50
AlpS
rapid
per
~-C
coupling
the
curves
recovery
diodes
and
for
leading
and
estimation
not
covered
pulse
the
between
heating
have
are
100
AlpS.
for a given
repetition
housing
at
of
forward
stud
base
controlled
particularly
edge
linear
of
device
by
the
frequency
current
rate.
high
and
frequency)
energy
devices
reverse
suitable
rates
dissipation
and
anode
loss
of
ratings.
pulse
current
has
per
with
recovery
for
rise
to
width
(which
been
pulse.
all
use
of
be
(d)
ABCD
These
characteristics
for
Vp
current.
(e)
Reverse
the
= A + B
(i)
Constants
constants
forward
ln
recovery
QRA
is
on
(ip)
based
(applicable
page
+ C
50%
8)
iF
IRM
characteristic
ratings
on
only
are
+
nJ
iF : where
chord
over
the
co-efficients
given
as
current
below:
ip = instantaneous
shown
range
below.
of
of
the
Vp
expression
forward
- 6 -
R.R.
No.
R.R.
Issue
Page
Issue
ii)
(
QRR
is
based
on a lS0uS
integratLon
tLme
83NR3
2
1
lS0uS
Le.
QRR
J
t
'"
0
iRR
dt
4.0
include
(iii)
Reverse
The
Recovery
following
reverse
(a)
Determination
From
shunt
(see
instantaneous
the
area
temperature
TeASE
where
t
A
f
The
W(TOT) =
(b)
(new)
r
t
duration
Area
Rated
total
W(original)
Determination
K
factor
procedure
recovery
waveforms
Note
reverse
under
can
'"
TeASE
4.42
of
under
frequency
dissipation
Loss
loss.
by
of
1)
and
this
waveform
then
(original)
x{t.lO-4
reverse
reverse
+ A x f
without
is
recommended
measurement
recovery
reverse
recovery
be
evaluated
recovery
loss
at
the
is
now
current
voltage
loss
be A joules
from:
-
A(ft x 10
( t
(K/W)
loss
waveform
original
given
by
Measurement
for
obtained
present
waveform
per
6
per
pulse
per
pulse
case
temperature.
use
+
where
from a high
during
must
be
pulse.
RJ-C
in
in
it
is
necessary
recovery,
constructed.
A
new
X
f)
)
microseconds.
joules
(W.s.)
to
frequency
an
Let
case
In
circumstances
current
A
in
joules
Let E be
p
13).
Let f be
then
TeASE
where
TCASEncw
TeASE original
ratings.
A
suitable
restrict
(V
RM
of
)
If a different
Grade,
conditions,
may
the
value
the
new
is
R-C
the
transient
0.67
of
the
reverse
where
be
operating
'"
TeASE original - (E x ~ x
is
the
snubber
the
grade
it
or
for
estimated
of
energy
frequency
the
required
heat
sink.
network
reverse
maximum
is
loss
may
is
design
per
grade.
being
be
not
from
temperature
voltage
approximated
possible
purposes,
curves
reverse
in
maximum
is
connected
used
or
cycle
Hz
f)
heat
given
waveform
V
RM
to
measure
the
on
page
sink
across
is
lower
by a pro
additional
13.
in
joules
temperature
with
the
the
to a peak
than
rata
voltage
(curves
frequency
diode
value
0.67
adjustment
and
losses
on
and
to
of
NOTE
of
the
maximum
value
obtained
from
the
curves
provided.
- 7 R.R.
R.R.
Page
No.
Issue
Issue
83NR3
2
1
1
Reverse
current.
Recovery
This
(a)
(b)
(c)
Loss
device
When
a.c.
by
A
input
has a low
measuring
coupled
prior
suitable,
of
internal
signal.
Measurement
an
appropriate
anode
to
by
Measurement
the
devices
passage
polarised,
the
measuring
amplifiers
of
reverse
cathode.
reverse
charge
of
by
snubber
recovered
such
high
clipping
oscilloscope
the
recovery
of
care
must
as
current
amplitude
relatively
waveform
0.1
uF, 5 ohms
charge
forward
circuit
and
be
taken
transformers
current.
must
to
avoid
high
amplitude
should
connected
peak
reverse
to
ensure
are
be
connected
overloading
forward
be
carried
not
across
recovery
that:
affected
the
out
to
the
current
with
diode
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