Westcode Semiconductors K2623T#480, K2623T#520 Data Sheet
Date:- 25 Feb, 2004
WESTCODE
An
Absolute Maximum Ratings
V
DRM
V
DSM
V
RRM
V
RSM
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
(di/dt)
V
RGM
P
G(AV)
P
GM
T
j op
T
stg
IXYS
Company
Medium Voltage Thyristor
Types K2623T#480 to K2623T#520
Old Type No.: R1263CH45-52
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
OTHER RATINGS
Maximum average on-state current, T
Maximum average on-state current. T
Maximum average on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, Vrm=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, Vrm=0.6V
2
I
t capacity for fusing tp=10ms, V
Critical rate of rise of on-state current (repetitive), (Note 6)
cr
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
=25°C, (note 4)
sink
rm
=55°C, (note 2)
sink
=85°C, (note 2)
sink
=85°C, (note 3)
sink
=25°C, (note 2)
sink
≤
10V, (note 5)
rm
RRM
≤
10V, (note 5)
, (note 5)
RRM
, (note 5)
Data Sheet Issue:- 1
MAXIMUM
LIMITS
4800-5200
4800-5200
4800-5200
4900-5300
MAXIMUM
LIMITS
2623
1819
1117
5150
4532
27
30
3.65×10
4.50×10
-40 to +125
-40 to +150
6
6
300
600
5
4
30
UNITS
V
V
V
V
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
Data Sheet. Types K2623T#480 to K2623T#520 Issue 2 Page 1 of 11 February, 2004
, IFG=2A, t
DRM
≤
0.5µs, T
r
case
=125°C.
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Characteristics
Medium Voltage Thyristor Types K2623T#480 to K2623T#520
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
TM
V
T0
r
T
(dv/dt)crCritical rate of rise of off-state voltage 1000 - - VD=80% V
I
DRM
I
RRM
V
tr
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
t
q
R
thJK
Maximum peak on-state voltage - - 2.6 ITM=4000A V
Threshold voltage - - 1.421 V
Slope resistance - - 0.295
Peak off-state current - - 200 Rated V
Peak reverse current - - 200 Rated V
DRM
RRM
On-state recovery voltage - 30 - IT=6000A, tp=10ms, T
Gate trigger voltage - - 3.0 V
Gate trigger current - - 600
Gate non-trigger voltage - - 0.25 Rated V
=25°C VD=10V, IT=3A
T
j
DRM
Holding current - - 1000 Tj=25°C mA
Gate-controlled turn-on delay time - 1.3 2.0 µs
Turn-on time - 3.0 4.0
=2A, tr=0.5µs, VD=67%V
I
FG
di/dt=10A/µs, T
Recovered charge - 6800 - µC
Recovered charge, 50% Chord - 2600 3000 µC
Reverse recovery current - 180
Reverse recovery time - 30
-
-
- 450 -
Turn-off time (Note 2)
- 700 -
Thermal resistance, junction to heatsink
- - 0.008 Double side cooled K/W
=2000A, tp=2000µs, di/dt=10A/µs,
I
TM
V
=100V
r
ITM=2000A, tp=2000µs, di/dt=10A/µs,
V
=100V, Vdr=80%V
r
ITM=2000A, tp=2000µs, di/dt=10A/µs,
V
=100V, Vdr=80%V
r
- - 0.016 Single side cooled K/W
(Note 1)
, linear ramp, gate o/c
DRM
=25°C V
case
=25°C
j
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
, ITM=2000A,
DRM
UNITS
m
V/µs
mA
mA
mA
V
µs
A
µs
µs
F Mounting force 63 - 77 kN
W
Weight
t
- 1.23 - Outline options TC and TT
- 1.70 - Outline options TD and TV
kg
Ω
Notes:-
Unless otherwise indicated Tj=125°C
1)
For other clamp forces consult factory.
2)
Notes on non-rupture rated packages.
This product is available with a non-rupture rated package.
For additional details on these products, please consult factory.
Data Sheet. Types K2623T#480 to K2623T#520 Issue 2 Page 2 of 11 February, 2004
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Medium Voltage Thyristor Types K2623T#480 to K2623T#520
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
48 4800 4900 2160
50 5000 5100 2200
52 5200 5300 2240
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Frequency Ratings
The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum
ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 600A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 300A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Square wave frequency ratings
These ratings are given for load component rate of rise of on-state current of 50A/µs.
9.0 Duty cycle lines
The 100% duty cycle is represented on the frequency ratings by a straight line. Other duties can be
included as parallel to the first.
Data Sheet. Types K2623T#480 to K2623T#520 Issue 2 Page 3 of 11 February, 2004
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10.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
(t
p1
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
11.0 Computer Modelling Parameters
An IXYS Company
I
GM
4A/µs
should remain flowing for the same duration as the anode current and have a
G
GT
Medium Voltage Thyristor Types K2623T#480 to K2623T#520
I
G
t
p1
.
11.1 Device Dissipation Calculations
∆
2
4
=
I
AV
Where VT0=1.421V, rT=0.295m
R
= Supplementary thermal impedance, see table below and
th
ff
= Form factor, see table below.
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 3.464 2.449 2 1.732 1.414 1.149 1
Sine wave 3.98 2.778 2.22 1.879 1.57
00
⋅⋅
Ω,
rff
T
2
⋅⋅⋅++−
WrffVV
AVTTT
and:
Supplementary Thermal Impedance
0.00915 0.00907 0.00898 0.00891 0.00878 0.00864 0.008
0.01795 0.01781 0.01772 0.01759 0.01731 0.01678 0.016
0.00911 0.00903 0.00895 0.00884 0.00867
0.01784 0.01775 0.01763 0.01735 0.01682
Form Factors
W
AV
=
R
max
T
th
−=∆
TTT
Hsj
Data Sheet. Types K2623T#480 to K2623T#520 Issue 2 Page 4 of 11 February, 2004
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