Maximum average on-state current, T
Maximum average on-state current. T
Maximum average on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Critical rate of rise of on-state current (repetitive), (Note 6)200A/µs
cr
Critical rate of rise of on-state current (non-repetitive), (Note 6)400A/µs
Peak reverse gate voltage5V
Mean forward gate power4W
Peak forward gate power60W
Operating temperature range-40 to +115°C
Storage temperature range-40 to +150°C
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Frequency Ratings
The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum
ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.
6.0 Snubber Components
When selecting snubber components, care m ust be taken not to use ex cessively large values of snubber
capacitor or excessively sm all values of snubber re sistor. Such exc essive com ponent values may lead to
device damage due to the large resultant values of snubber disc harge current. If r equired, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maxim um un-primed rate of ris e of on-s tate c urr ent must not exceed 400A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Square wave frequency ratings
These ratings are given for load component rate of rise of on-state current of 50A/µs.
9.0 Duty cycle lines
The 100% duty cycle is represented on the frequency ratings by a straight line. Other duties can be
included as parallel to the first.
Data Sheet. Types K2359TD600 to K2359TD650 Issue 1Page 3 of 11August, 2002
WESTCODE
WESTCODE An IXYS Company Medium Voltage Thyristor Type K2359TD600-650
WESTCODEWESTCODE
10.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its dur ation
) should be 20µs or sufficient to allow the anode current to reach ten tim es IL, whichever is greater.
(t
p1
Otherwise, an increase in pulse current c ould be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
11.0 Computer Modelling Parameters
11.1 Device Dissipation Calculations
I
=
AV
Where VT0=1.391V, rT=0.360mΩ,
should remain flowing for the same duration as the anode current and have a
G
2
4
00
2
⋅⋅
.
GT
T
AV
=
∆
R
th
max
TTT
−=∆
Hsj
WrffVV
⋅⋅⋅++−
AVTTT
rff
T
and:
W
R
= Supplementary thermal impedance, see table below and
th
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle30°60°90°120°180°270°d.c.
Square wave Double Side Cooled0.009230.009150.009070.008990.008840.008640.0085
Square wave Single Side Cooled0.018010.017920.017830.017750.017600.017390.0170
Sine wave Double Side Cooled0.009170.009060.008980.008900.00867
Sine wave Single Side Cooled0.017940.017820.017730.017650.01742
Form Factors
Conduction Angle30°60°90°120°180°270°d.c.
Square wave3.4642.44921.7321.4141.1491
Sine wave3.982.7782.221.8791.57
Data Sheet. Types K2359TD600 to K2359TD650 Issue 1Page 4 of 11August, 2002
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