Westcode Semiconductors K1121NC320, K1121NC360 Data Sheet
Medium Voltage Thyristor
Types K1121NC320 to K1121NC360
Absolute Maximum Ratings
Date:- 15 May, 2003
Data Sheet Issue:- 1
Old Type No.: P440CH32-36
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1) 3200-3600 V
Non-repetitive peak off-state voltage, (note 1) 3200-3600 V
Repetitive peak reverse voltage, (note 1) 3200-3600 V
Non-repetitive peak reverse voltage, (note 1) 3300-3700 V
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
(di/dt)
V
RGM
P
G(AV)
P
GM
T
j op
T
stg
Maximum average on-state current, T
Maximum average on-state current. T
Maximum average on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, Vrm=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, Vrm=0.6V
2
I
t capacity for fusing tp=10ms, V
Critical rate of rise of on-state current (repetitive), (Note 6) 300 A/µs
cr
Critical rate of rise of on-state current (non-repetitive), (Note 6) 600 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 4 W
Peak forward gate power 30 W
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
MAXIMUM
LIMITS
MAXIMUM
LIMITS
=55°C, (note 2) 1121 A
sink
=85°C, (note 2) 778 A
sink
=85°C, (note 3) 479 A
sink
=25°C, (note 2) 2200 A
sink
=25°C, (note 4) 1939 A
sink
, (note 5) 15.0 kA
RRM
≤
10V, (note 5)
rm
RRM
≤
10V, (note 5)
rm
, (note 5) 1.13×10
16.0 kA
6
1.28×10
6
UNITS
UNITS
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1 Page 1 of 11 May, 2003
, IFG=2A, t
DRM
≤
0.5µs, T
r
case
=125°C.
WESTCODE
WESTCODE
WESTCODEWESTCODE
An IXYS Company
Characteristics
Medium Voltage Thyristor Types K1121NC320 to K1121NC360
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
TM
V
TM
V
T0
r
T
(dv/dt)crCritical rate of rise of off-state voltage 1000 - - VD=80% V
I
DRM
I
RRM
V
tr
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
t
q
R
thJK
Maximum peak on-state voltage - 2.05 2.2 ITM=2000A V
Maximum peak on-state voltage - - 2.94 ITM=3400A V
Threshold voltage - - 1.098 V
Slope resistance - - 0.542
Peak off-state current - - 100 Rated V
Peak reverse current - - 100 Rated V
DRM
RRM
On-state recovery voltage - 10.0 - IT=3300A, tp=10ms, T
Gate trigger voltage - - 3.0 V
Gate trigger current - - 300
Gate non-trigger voltage - - 0.25 Rated V
=25°C VD=10V, IT=3A
T
j
DRM
Holding current - - 1000 Tj=25°C mA
Gate-controlled turn-on delay time - 0.7 1.5 µs
Turn-on time - 1.5 3.0
=67% V
V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
Recovered charge - 2000 - µC
Recovered charge, 50% Chord - 1000 1400 µC
Reverse recovery current - 100 - A
I
=1000A, tp=1000µs, di/dt=10A/µs,
TM
V
=50V
r
Reverse recovery time, 50% Chord - 20.0 -
ITM=1000A, tp=1000µs, di/dt=10A/µs,
V
=50V, Vdr=80%V
r
ITM=1000A, tp=1000µs, di/dt=10A/µs,
V
=50V, Vdr=80%V
r
Turn-off time
Thermal resistance, junction to heatsink
- 200 -
- 250 -
- - 0.024 Double side cooled K/W
- - 0.048 Single side cooled K/W
(Note 1)
, linear ramp, gate o/c
DRM
=25°C V
case
, IT=1000A, di/dt=10A/µs,
DRM
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
UNITS
m
V/µs
mA
mA
mA
V
µs
µs
µs
F Mounting force 19 - 26 kN
W
Weight - 510 - g
t
Ω
Notes:-
Unless otherwise indicated Tj=125°C.
1)
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1 Page 2 of 11 May, 2003
WESTCODE
WESTCODE
WESTCODEWESTCODE
An IXYS Company
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Medium Voltage Thyristor Types K1121NC320 to K1121NC360
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
32 3200 3300 1800
34 3400 3500 1850
36 3600 3700 1900
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Frequency Ratings
The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum
ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 600A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 300A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Square wave frequency ratings
These ratings are given for load component rate of rise of on-state current of 50A/µs.
9.0 Duty cycle lines
The 100% duty cycle is represented on the frequency ratings by a straight line. Other duties can be
included as parallel to the first.
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1 Page 3 of 11 May, 2003
WESTCODE
WESTCODE
WESTCODEWESTCODE
10.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
(t
p1
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
11.0 Computer Modelling Parameters
An IXYS Company
I
GM
4A/µs
should remain flowing for the same duration as the anode current and have a
G
GT
Medium Voltage Thyristor Types K1121NC320 to K1121NC360
I
G
t
p1
.
11.1 Device Dissipation Calculations
∆
2
4
=
I
AV
Where VT0=1.098V, rT=0.542m
R
= Supplementary thermal impedance, see table below and
th
ff
= Form factor, see table below.
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 3.464 2.449 2 1.732 1.414 1.149 1
Sine wave 3.98 2.778 2.22 1.879 1.57
00
⋅⋅
Ω,
rff
T
2
⋅⋅⋅++−
WrffVV
AVTTT
and:
Supplementary Thermal Impedance
0.03047 0.03035 0.02857 0.02733 0.02569 0.0242 0.024
0.05823 0.0577 0.05408 0.05286 0.05121 0.0497 0.048
0.0303 0.0275 0.0262 0.02524 0.024
0.05588 0.05323 0.05186 0.05089 0.048
Form Factors
W
AV
=
R
max
T
th
−=∆
TTT
Hsj
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1 Page 4 of 11 May, 2003
Loading...