Medium Voltage Thyristor
Types K1121NC320 to K1121NC360
Absolute Maximum Ratings
Date:- 15 May, 2003
Data Sheet Issue:- 1
Old Type No.: P440CH32-36
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1) 3200-3600 V
Non-repetitive peak off-state voltage, (note 1) 3200-3600 V
Repetitive peak reverse voltage, (note 1) 3200-3600 V
Non-repetitive peak reverse voltage, (note 1) 3300-3700 V
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
(di/dt)
V
RGM
P
G(AV)
P
GM
T
j op
T
stg
Maximum average on-state current, T
Maximum average on-state current. T
Maximum average on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, Vrm=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, Vrm=0.6V
2
I
t capacity for fusing tp=10ms, V
Critical rate of rise of on-state current (repetitive), (Note 6) 300 A/µs
cr
Critical rate of rise of on-state current (non-repetitive), (Note 6) 600 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 4 W
Peak forward gate power 30 W
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
MAXIMUM
LIMITS
MAXIMUM
LIMITS
=55°C, (note 2) 1121 A
sink
=85°C, (note 2) 778 A
sink
=85°C, (note 3) 479 A
sink
=25°C, (note 2) 2200 A
sink
=25°C, (note 4) 1939 A
sink
, (note 5) 15.0 kA
RRM
≤
10V, (note 5)
rm
RRM
≤
10V, (note 5)
rm
, (note 5) 1.13×10
16.0 kA
6
1.28×10
6
UNITS
UNITS
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1 Page 1 of 11 May, 2003
, IFG=2A, t
DRM
≤
0.5µs, T
r
case
=125°C.
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Characteristics
Medium Voltage Thyristor Types K1121NC320 to K1121NC360
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
TM
V
TM
V
T0
r
T
(dv/dt)crCritical rate of rise of off-state voltage 1000 - - VD=80% V
I
DRM
I
RRM
V
tr
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
t
q
R
thJK
Maximum peak on-state voltage - 2.05 2.2 ITM=2000A V
Maximum peak on-state voltage - - 2.94 ITM=3400A V
Threshold voltage - - 1.098 V
Slope resistance - - 0.542
Peak off-state current - - 100 Rated V
Peak reverse current - - 100 Rated V
DRM
RRM
On-state recovery voltage - 10.0 - IT=3300A, tp=10ms, T
Gate trigger voltage - - 3.0 V
Gate trigger current - - 300
Gate non-trigger voltage - - 0.25 Rated V
=25°C VD=10V, IT=3A
T
j
DRM
Holding current - - 1000 Tj=25°C mA
Gate-controlled turn-on delay time - 0.7 1.5 µs
Turn-on time - 1.5 3.0
=67% V
V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
Recovered charge - 2000 - µC
Recovered charge, 50% Chord - 1000 1400 µC
Reverse recovery current - 100 - A
I
=1000A, tp=1000µs, di/dt=10A/µs,
TM
V
=50V
r
Reverse recovery time, 50% Chord - 20.0 -
ITM=1000A, tp=1000µs, di/dt=10A/µs,
V
=50V, Vdr=80%V
r
ITM=1000A, tp=1000µs, di/dt=10A/µs,
V
=50V, Vdr=80%V
r
Turn-off time
Thermal resistance, junction to heatsink
- 200 -
- 250 -
- - 0.024 Double side cooled K/W
- - 0.048 Single side cooled K/W
(Note 1)
, linear ramp, gate o/c
DRM
=25°C V
case
, IT=1000A, di/dt=10A/µs,
DRM
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
UNITS
m
V/µs
mA
mA
mA
V
µs
µs
µs
F Mounting force 19 - 26 kN
W
Weight - 510 - g
t
Ω
Notes:-
Unless otherwise indicated Tj=125°C.
1)
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1 Page 2 of 11 May, 2003
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Medium Voltage Thyristor Types K1121NC320 to K1121NC360
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
32 3200 3300 1800
34 3400 3500 1850
36 3600 3700 1900
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Frequency Ratings
The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum
ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 600A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 300A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Square wave frequency ratings
These ratings are given for load component rate of rise of on-state current of 50A/µs.
9.0 Duty cycle lines
The 100% duty cycle is represented on the frequency ratings by a straight line. Other duties can be
included as parallel to the first.
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1 Page 3 of 11 May, 2003
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10.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
(t
p1
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
11.0 Computer Modelling Parameters
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I
GM
4A/µs
should remain flowing for the same duration as the anode current and have a
G
GT
Medium Voltage Thyristor Types K1121NC320 to K1121NC360
I
G
t
p1
.
11.1 Device Dissipation Calculations
∆
2
4
=
I
AV
Where VT0=1.098V, rT=0.542m
R
= Supplementary thermal impedance, see table below and
th
ff
= Form factor, see table below.
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 3.464 2.449 2 1.732 1.414 1.149 1
Sine wave 3.98 2.778 2.22 1.879 1.57
00
⋅⋅
Ω,
rff
T
2
⋅⋅⋅++−
WrffVV
AVTTT
and:
Supplementary Thermal Impedance
0.03047 0.03035 0.02857 0.02733 0.02569 0.0242 0.024
0.05823 0.0577 0.05408 0.05286 0.05121 0.0497 0.048
0.0303 0.0275 0.0262 0.02524 0.024
0.05588 0.05323 0.05186 0.05089 0.048
Form Factors
W
AV
=
R
max
T
th
−=∆
TTT
Hsj
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1 Page 4 of 11 May, 2003
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p
p
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11.2 Calculating VT using ABCD Coefficients
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Medium Voltage Thyristor Types K1121NC320 to K1121NC360
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
The constants, derived by curve fitting software, are given below for hot characteristics. The resulting
values for V
11.3 D.C. Thermal Impedance Calculation
given below:
T
agree with the true device characteristic over a current range, which is limited to that plotted.
T
A 0.89335367 A 0.89335367
B 0.03826203 B 0.03826203
C 2.5045×10
D 9.27801×10
vs. VT, on page 6 is represented in two ways;
T
and rT tangent used for rating purposes and
T0
()
ln
25°C Coefficients 125°C Coefficients
-4
-3
∑
=
np
=
p
1
C 2.5045×10
D 9.27801×10
−
1
pt
t
τ
p
−⋅=
err
⋅+⋅+⋅+=
IDICIBAV
in
T
TTTT
-4
-3
Where
The coefficients for this device are shown in the tables below:
Term12345
r
p
τ
p
Term1234567
r
p
τ
p
p = 1
t = Duration of heating pulse in seconds.
r
= Thermal resistance at time t.
t
= Amplitude of pth term.
r
τ
= Time Constant of rth term.
0.02836 5.574×10
6.345 3.55 0.582 0.132 0.0496 0.01015 2.225×10
n, n
to
0.01248 6.216×10
0.884 0.1221 0.03612 7.612×10
is the number of terms in the series and:
D.C. Double Side Cooled
-3
-3
D.C. Single Side Cooled
3.588×10
-3
1.939×10
6.222×10
-3
-3
1.527×10
2.04×10
-3
-3
-3
1.675×10
1.038×10
1.93×10
-3
-3
-3
1.258×10
-3
-3
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1 Page 5 of 11 May, 2003
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Medium Voltage Thyristor Types K1121NC320 to K1121NC360
Curves
Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance
10000
K1121NC320-360
Issue 1
0.1
K1121NC320-360
Issue 1
SSC
0.048K/W
Tj = 125°CTj = 25°C
(A)
TM
1000
Instantaneous On-state current - I
100
01234 56
Instantaneous On-state voltage - V
TM
(V)
0.01
0.001
Transient thermal impedance (K/W)
0.0001
0.00001
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Time (s)
DSC
0.024K/W
Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves
10
K1121NC320-360
Tj=25°C
9
Issue 1
30
K1121NC320-360
Tj=25°C
Issue 1
8
7
(V)
GT
6
5
IGT, V
GT
4
Gate Trigger Voltage - V
3
2
1
IGD, V
GD
0
0 0.2 0.4 0.6 0.8 1
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1 Page 6 of 11 May, 2003
Max VG dc
125°C
25°C
-10°C
Gate Trigger Current - I
-40°C
Min VG dc
(A)
GT
25
Max VG dc
20
(V)
GT
15
Gate Trigger Voltage - V
10
PG Max 30W dc
5
0
0246810
PG 4W dc
Gate Trigger Cur rent - I
Min VG dc
(A)
GT
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Medium Voltage Thyristor Types K1121NC320 to K1121NC360
Figure 5 - Total recovered charge, Q
10000
K1121NC320-360
Issue 1
Tj=125°C
(µC)
rr
Recovered charge - Q
1000
1 10 100 1000
di/dt (A/µs)
rr
2000A
1500A
1000A
500A
Figure 6 - Recovered charge, Qra (50% chord)
10000
K1121NC320-360
Issue 1
Tj=125°C
2000A
1500A
1000A
500A
, 50% chord (µC)
ra
1000
Recovered charge - Q
100
1 10 100 1000
di/dt (A/µs)
Figure 7 - Peak reverse recovery current, I
10000
K1121NC320-360
Issue 1
Tj=125°C
1000
(A)
rm
100
Reverse recovery current - I
10
1 10 100 1000
di/dt (A/µs)
rm
2000A
1500A
1000A
500A
Figure 8 - Maximum recovery time, trr (50% chord)
100
(µs)
rr
10
Reverse recovery time (50% chord) - t
1
1 10 100 1000
di/dt (A/µs)
K1121NC320-360
Issue 1
Tj=125°C
2000A
1500A
1000A
500A
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1 Page 7 of 11 May, 2003
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Medium Voltage Thyristor Types K1121NC320 to K1121NC360
Figure 9 – On-state current vs. Power dissipation – Double Side Cooled (Sine wave)
4500
K1121NC320-360
Issue 1
4000
3500
3000
2500
2000
1500
Maximum forward dissipation (W)
1000
500
30°
90°
60°
180°
120°
Figure 10 – On-state current vs. Heatsink temperature - Double Side Cooled (Sine wave)
150
K1121NC320-360
Issue 1
125
100
75
50
Maximum permissable heatsink temperature (°C)
25
30° 60° 90° 120° 180°
0
0 500 1000 1500
Mean forward current (A) (Whole cycle averaged)
Figure 11 – On-state current vs. Power dissipation – Double Side Cooled (Square wave)
4500
K1121NC320-360
Issue 1
4000
3500
3000
2500
2000
1500
Maximum forward dissipation (W)
1000
500
d.c.
270°
180°
120°
90°
60°
30°
0
0 500 1000 1500
Mean forward current (A) (Whole cycle averaged)
Figure 12 – On-state current vs. Heatsink temperature – Double Side Cooled (Square wave)
150
K1121NC320-360
Issue 1
125
100
75
`
50
Maximum permissible heatsink temperature (°C)
25
30°
60°
90°
120°
180°
270°
d.c.
0
0 500 1000 1500 2000 2500
Mean Forward Current (Amps) (Whole Cycle Averaged)
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1 Page 8 of 11 May, 2003
0
0 500 1000 1500 2000 2500
Mean Forward Current (Amps) (Whole Cycle Averaged)
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Medium Voltage Thyristor Types K1121NC320 to K1121NC360
Figure 13 – On-state current vs. Power dissipation – Single Side Cooled (Sine wave)
2500
K1121NC320-360
Issue 1
180°
2000
30°
1500
1000
Maximum forward dissipation (W)
500
60°
90°
120°
Figure 14 – On-state current vs. Heatsink temperature – Single Side Cooled (Sine wave)
150
K1121NC320-360
Issue 1
125
100
75
50
Maximum permissable heatsink temperature (°C)
25
30° 60° 90° 120° 180°
0
0 200 400 600 800 1000
Mean forward current (A) (Whole cycle averaged)
Figure 15 – On-state current vs. Power dissipation – Single Side Cooled (Square wave)
2500
K1121NC320-360
Issue 1
2000
1500
d.c.
270°
180°
120°
1000
Maximum forward dissipation (W)
500
90°
60°
30°
0
0 200 400 600 800 1000
Mean forward current (A) (Whole cycle averaged)
Figure 16 – On-state current vs. Heatsink temperature – Single Side Cooled (Square wave)
150
K1121NC320-360
Issue 1
125
100
30°
60°
90°
75
50
Maximum permissible heatsink temperature (°C)
25
120°
180°
270°
d.c.
0
0 200 400 600 800 1000 1200 1400
Mean Forward Current (Amps) (Whole Cycle Averaged)
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1 Page 9 of 11 May, 2003
0
0 200 400 600 800 1000 1200 1400
Mean Forward Current (Amps) (Whole Cycle Averaged)
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Medium Voltage Thyristor Types K1121NC320 to K1121NC360
Figure 17 – Square Wave Frequency Ratings Figure 18 – Sine Wave Frequency Ratings
1.00E+05
K1121NC320-360
Issue 1
di/dt=50A/µs
Ths=55°C
1.00E+05
K1121NC320-360
Issue 1
Ths=55°C
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E+00
500A
1kA
2kA
4kA
6kA
1.00E-05 1. 00E-04 1. 00E-03 1. 00E-02
100% Duty Cycle
8kA
di/dt (A/µs)
Figure 19 - Maximum surge and I2t Ratings
500A
1.00E+04
1kA
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
2kA
4kA
6kA
1.00E-05 1. 00E-04 1. 00E-03 1. 00E-02
8kA
di/dt (A/µs)
100% Duty Cycle
100000
10000
Total peak half sine surge current (A)
1000
135101 5 10 50 100
Duration of surge (ms) Duration of surge (cycles @ 50Hz)
I2t: V
RRM
≤
10V
I
TSM
I
Tj (initial) = 125°C
K1121NC320-360
I2t: 60% V
: V
RRM
: 60% V
TSM
Issue 1
≤
RRM
10V
RRM
1.00E+07
1.00E+06
1.00E+05
s)
2
t (A
2
Maximum I
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1 Page 10 of 11 May, 2003
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Outline Drawing & Ordering Information
Medium Voltage Thyristor Types K1121NC320 to K1121NC360
ORDERING INFORMATION
K1121 NC
Fixed
Type Code
Order code: K1121NC340 – 3400V V
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
IXYS Corporation
3540 Bassett Street
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
outline code
, V
DRM
Fixed
, 27.7mm clamp height capsule.
RRM
www.westcode.com
www.ixys.com
(Please quote 10 digit code as below)
Voltage code
/100
V
DRM
32-36
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
E-mail: WSL.sales@westcode,com
E-mail: WSI.sales@westcode.com
0
Fixed turn-off
time code
Westcode Semiconductors Ltd
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
Westcode Semiconductors Inc
3270 Cherry Avenue
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
© Westcode Semiconductors Ltd.
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1 Page 11 of 11 May, 2003
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