Westcode Semiconductors K0769NC600, K0769NC650 Data Sheet
Date:- 14 Aug, 2002
WESTCODE
An IXYS Company
Medium Voltage Thyristor
Types K0769NC600 to K0769NC650
Old Type No.: P410CH65
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
diT/dt
V
RGM
P
G(AV)
P
GM
T
HS
T
stg
Repetitive peak off-state voltage, (note 1) 6000-6500 V
Non-repetitive peak off-state voltage, (note 1) 6000-6500 V
Repetitive peak reverse voltage, (note 1) 6000-6500 V
Non-repetitive peak reverse voltage, (note 1) 6100-6600 V
OTHER RATINGS
Mean on-state current, T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, Vrm=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, Vrm=0.6V
I2t capacity for fusing tp=10ms, V
Maximum rate of rise of on-state current (repetitive), (Note 6) 150 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 300 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 2 W
Peak forward gate power 30 W
Operating temperature range -40 to +115 °C
Storage temperature range -40 to +150 °C
=55°C, (note 2) 769 A
sink
=85°C, (note 2) 535 A
sink
=85°C, (note 3) 330 A
sink
=25°C, (note 2) 1506 A
sink
=25°C, (note 4) 1332 A
sink
rm
≤
10V, (note 5)
rm
Data Sheet Issue:- 1
, (note 5) 8600 A
RRM
≤
10V, (note 5)
, (note 5) 370×10
RRM
MAXIMUM
LIMITS
MAXIMUM
LIMITS
9500 A
3
3
451×10
UNITS
UNITS
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 115°C Tj initial.
6)
VD=67% V
Data Sheet. Types K0769NC600 to K0769NC650 Issue 1 Page 1 of 11 August, 2002
, IFG=2A, t
DRM
≤
0.5µs, T
r
case
=125°C.
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An IXYS Company
Characteristics
Medium Voltage Thyristor Types K0769NC600 to K0769NC650
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
V
r
s
dv/dt Critical rate of rise of off-state voltage 1000 - - VD=80% V
I
DRM
I
RRM
V
V
I
GT
V
I
H
t
gd
t
gt
Q
Q
I
rm
t
rr
t
q
R
Maximum peak on-state voltage - - 2.75 ITM=1000A V
TM
Threshold voltage - - 1.566 V
0
Slope resistance - - 1.172
, linear ramp, gate o/c
DRM
Peak off-state current - - 50 Rated V
Peak reverse current - - 50 Rated V
On-state recovery voltage - 12 - ITM=2300A, tp=10ms, T
tr
Gate trigger voltage - - 3.0 V
GT
T
Gate trigger current - - 300
Gate non-trigger voltage - - 0.25 Rated V
GD
DRM
RRM
=25°C, VD=10V, IT=3A
j
DRM
Holding current - - 1000 Tj=25°C mA
Gate-controlled turn-on delay time - 0.5 1.5 µs
Turn-on time - 2.8 4.0
Recovered charge - 3100 - µC
rr
Recovered charge, 50% Chord - 2000 2400 µC
ra
Reverse recovery current - 135 - A
=67%V
V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
I
=1000A, tp=1000µs, di/dt=10A/µs,
TM
V
=50V
r
, ITM=1000A, di/dt=10A/µs,
DRM
Reverse recovery time, 50% Chord - 30 -
ITM=1000A, tp=1000µs, di/dt=10A/µs,
V
=50V, Vdr=33%V
r
ITM=1000A, tp=1000µs, di/dt=10A/µs,
V
=50V, Vdr=33%V
r
Turn-off time
Thermal resistance, junction to heatsink
th(j-hs)
- 900 -
- 1200 -
- - 0.024 Double side cooled K/W
- - 0.048 Single side cooled K/W
(Note 1)
=25°C V
case
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
UNITS
m
V/µs
mA
mA
mA
V
µs
µs
µs
F Mounting force 19 - 26 kN
W
Weight - 510 - g
t
Ω
Notes:-
Unless otherwise indicated Tj=115°C.
1)
Data Sheet. Types K0769NC600 to K0769NC650 Issue 1 Page 2 of 11 August, 2002
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Medium Voltage Thyristor Types K0769NC600 to K0769NC650
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
60 6000 6100 3000
61 6100 6200 3050
62 6200 6300 3100
63 6300 6400 3150
64 6400 6500 3200
65 6500 6600 3250
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Frequency Ratings
The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum
ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Square wave frequency ratings
These ratings are given for load component rate of rise of on-state current of 50A/µs.
9.0 Duty cycle lines
The 100% duty cycle is represented on the frequency ratings by a straight line. Other duties can be
included as parallel to the first.
Data Sheet. Types K0769NC600 to K0769NC650 Issue 1 Page 3 of 11 August, 2002
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10.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
(t
p1
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
11.0 Computer Modelling Parameters
11.1 Device Dissipation Calculations
I
AV
Where V0=1.566V, rs=1.172m
R
= Supplementary thermal impedance, see table below and
th
ff
= Form factor, see table below.
=
An IXYS Company
I
GM
4A/µs
should remain flowing for the same duration as the anode current and have a
G
2
4
00
⋅⋅
2
rff
Ω,
Medium Voltage Thyristor Types K0769NC600 to K0769NC650
I
G
t
p1
.
GT
∆
T
AV
=
R
th
max
−=∆
TTT
Hsj
⋅⋅⋅++−
WrffVV
AVs
and:
s
W
Supplementary Thermal Impedance
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave Double Side Cooled 0.0293 0.0285 0.0278 0.0271 0.0261 0.0249 0.024
Square wave Single Side Cooled 0.0534 0.053 0.0524 0.0518 0.0509 0.0497 0.048
Sine wave Double Side Cooled 0.0286 0.0276 0.0269 0.0263 0.0248
Sine wave Single Side Cooled 0.0531 0.0523 0.0517 0.0511 0.0497
Form Factors
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 3.464 2.449 2 1.732 1.414 1.149 1
Sine wave 3.98 2.778 2.22 1.879 1.57
Data Sheet. Types K0769NC600 to K0769NC650 Issue 1 Page 4 of 11 August, 2002
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