Westcode Semiconductors K0349LC600, K0349LC650 Data Sheet

Date:- 20 Aug, 2002
WESTCODE
An IXYS Company
Medium Voltage Thyristor
Types K0349LC600 to K0349LC650
Old Type No.: P201CH60-65
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI I2t
(di/dt)
V
RGM
P
G(AV)
P
GM
V
GD
T
j op
T
stg
Repetitive peak off-state voltage, (note 1) 6000-6500 V Non-repetitive peak off-state voltage, (note 1) 6000-6500 V Repetitive peak reverse voltage, (note 1) 6000-6500 V Non-repetitive peak reverse voltage, (note 1) 6100-6600 V
OTHER RATINGS
Maximum average on-state current, T Maximum average on-state current. T Maximum average on-state current. T Nominal RMS on-state current, T D.C. on-state current, T
=25°C, (note 4) 622 A
sink
Peak non-repetitive surge tp=10ms, VRM=0.6V Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)
2
t capacity for fusing tp=10ms, VRM=0.6V I2t capacity for fusing tp=10ms, VRM≤10V, (note 5) Critical rate of rise of on-state current (repetitive), (Note 6) 150 A/µs
cr
Critical rate of rise of on-state current (non-repetitive), (Note 6) 300 A/µs Peak reverse gate voltage 5 V Mean forward gate power 2 W Peak forward gate power 30 W Non-trigger gate voltage, (Note 7) 0.25 V Operating temperature range -40 to +115 °C Storage temperature range -40 to +150 °C
sink
sink
sink
=25°C, (note 2) 705 A
sink
Data Sheet Issue:- 2
MAXIMUM
LIMITS
MAXIMUM
LIMITS
=55°C, (note 2) 349 A =85°C, (note 2) 221 A =85°C, (note 3) 134 A
, (note 5) 4800 kA
RRM
5300 kA
140×10
3
3
, (note 5) 115×10
RRM
UNITS
UNITS
A2s A2s
Notes: -
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 115°C T
6) V
=67% V
D
7) Rated V
Data Sheet. Types K0349LC600 to K0349LC650 Issue 2. Page 1 of 11 August, 2002
, IFG=2A, tr≤0.5µs, T
DRM
.
DRM
initial.
j
case
=115°C.
below 25°C.
j
WESTCODE An IXYS Company Medium Voltage Thyristor Types K0349LC600 to K0349LC650
r

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
V
TM
V
T0
r
T
(dv/dt) I
DRM
I
RRM
V
tr
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q Q I
rm
t
rr
t
q
R
thJK
Maximum peak on-state voltage - - 2.8 ITM=500A V Threshold voltage - - 1.568 V Slope resistance - - 2.428 Critical rate of rise of off-state voltage 1000 - - VD=80% V
c
Peak off-state current - - 50 Rated V Peak reverse current - - 50 Rated V On-state recovery voltage - 9.0 - IT=3×I Gate trigger voltage - - 3.0 V Gate trigger current - - 300
T(AV)M
=25°C, VD=10V, IT=3A
T
j
Gate non-trigger voltage - - 0.25 Rated V
, linear ramp, Gate O/C
DRM
DRM
RRM
, tp=10ms, T
DRM
case
=25°C V
m
V/µs
mA mA
mA
V Holding current - - 1000 Tj=25°C mA Gate controlled turn-on delay time - 0.6 1.2 Turn-on time - 6.0 9.0
rr
Recovered Charge - 3100 - µC Recovered Charge, 50% chord - 2100 2500 µC
ra
Reverse recovery current - 130 - A Reverse recovery time, 50% chord - 30 -
- 800 -
Turn-off time
- 1100 -
Thermal resistance, junction to heatsink
- - 0.047 Double side cooled K/W
=2A, tr=0.5µs, VD=67%V
I
FG
di/dt=10A/µs, T
I
=1000A, tp=1ms, di/dt=10A/µs, Vr=50V
TM
=25°C
j
, ITM=1000A,
DRM
ITM=1000A, tp=1ms, di/dt=10A/µs, Vr=50V, V
=33%V
dr
, dVdr/dt=20V/µs
DRM
ITM=1000A, tp=1ms, di/dt=10A/µs, Vr=50V, V
=33%V
dr
, dVdr/dt=200V/µs
DRM
µs
µs
µs
- - 0.094 Single side cooled K/W F Mounting force 10 - 20 kN W
Weight - 340 - g
t
Notes: -
1) Unless otherwise indicated T
Data Sheet. Types K0349LC600 to K0349LC650 Issue 2. Page 2 of 11 August, 2002
=115°C.
j
WESTCODE An IXYS Company Medium Voltage Thyristor Types K0349LC600 to K0349LC650

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
60 6000 6100 3000 62 6200 6300 3100 64 6400 6500 3200 65 6500 6600 3250

2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.

5.0 Frequency Ratings The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum

ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.

6.0 Snubber Components When selecting snubber components, care m ust be taken not to us e excessively large values of snubber

capacitor or excessively sm all values of snubber re sistor. Such exc essive com ponent values may lead to device damage due to the large resultant values of snubber dis charge current. If required, please cons ult the factory for assistance.

7.0 Rate of rise of on-state current The maxim um un-primed rate of r ise of on-state current mus t not ex c eed 400A/µs at any time during turn-

on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network.

8.0 Square wave frequency ratings These ratings are given for load component rate of rise of on-state current of 50A/µs.

9.0 Duty cycle lines The 100% duty cycle is represented on the frequency ratings by a straight line. Other duties can be

included as parallel to the first.
Data Sheet. Types K0349LC600 to K0349LC650 Issue 2. Page 3 of 11 August, 2002
WESTCODE An IXYS Company Medium Voltage Thyristor Types K0349LC600 to K0349LC650

10.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V

is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
) should be 20µs or sufficient to allow the anode current to r each ten times IL, whichever is greater.
(t
p1
Otherwise, an increase in pulse current c ould be needed to supply the necessary charge to trigger . The ‘back-porch’ current I magnitude in the order of 1.5 times I

11.0 Computer Modelling Parameters

11.1 Device Dissipation Calculations

I
=
AV
Where VT0=1.568V, rT=2.428mΩ,
should remain flowing for the same duration as the anode current and have a
G
2
4
00
2
.
GT
T
AV
=
R
th
max
TTT
=
Hsj
WrffVV
++
AVTTT
rff
T
and:
W
R
= Supplementary thermal impedance, see table below and
th
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave Double Side Cooled 0.0509 0.0504 0.0499 0.0494 0.0485 0.0474 0.047 Square wave Single Side Cooled 0.0987 0.0981 0.0976 0.0972 0.0963 0.0952 0.094
Sine wave Double Side Cooled 0.0505 0.0498 0.0493 0.0489 0.0475 Sine wave Single Side Cooled 0.0983 0.0976 0.0971 0.0966 0.0953
Form Factors
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 3.464 2.449 2 1.732 1.414 1.149 1
Sine wave 3.98 2.778 2.22 1.879 1.57
Data Sheet. Types K0349LC600 to K0349LC650 Issue 2. Page 4 of 11 August, 2002
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