Westcode Semiconductors DFP 170 Data Sheet

@)

WESTCODE

@)

SEMICONDUCTORS

Fast Recovery Stud-Base Diode Type PHN/PHR170

150

amperes average: up

to

1200 volts V

RRM

Technical
Publication

DFP170

Issue 1
February

1981

Ratings

(Maximum

values

at

Tj

125°C unless

stated

RATING CONDITIONS

Average
R.M.S.

D.C
Peak one-cycle surge

Maximum

Operating
Storage

Characteristics

forward

current

current

forward

current

non-repetitive

surge 12t

temperature

temperature

range

range

(Maximum

CHARACTERISTIC

Peak

forward

voltage

drop

Forward

Forward
Peak reverse

Thermal

Reverse recovered charge

conduction
conduction

current

resistance

threshold voltage
slope resistance

values

Half

sine

. { 60%

8.3ms

sme

8.3ms

sine

3ms sine pulse

at

Tj

125°C unless

CONDITIONS

At

470AIFM

VRM = VRRM
Junction
Case

to

tFM = 550A,di/dt

VRM

= 50V

otherwise)

wave

pulse

pulse

(max.)

to

case

heatsink

100°C

heatsink temperature

VARM

10

M';;

VARM

,;;

10

,;;

10

otberwise)

re-applied

I

vots

re-applied

volts

volts

VA
60%

{

VRM

VRM

Stat~

= 4OA/p,s

SYMBOL

IF

(AVI

IF

(RMSI
IF
IFSM(ll
IFSM(21
J2t(lI
J2t(21

12~(31

Tease

T

,

stg

SYMBOL

VFM
Va

r
IRRM
Rth(j.el
Rth(e.hsl

Q,.,

150A

4bOA

460A
4700A
5180A

96500Azs

116500A2s

91000A2

-40

+125°C

-40

+ 150°C

1.35V

1.02V

0.7mO

20mA

0.13°CIW
O.04°CIW

75p,C

s

VOLTAGE CODE

Repetitive

Non-repetitive

Ordering

voltage

Information

S

FIXED BASIC

CODE

Typical

code; SM08PHN 170 = 800V

voltage

M

VRRM

VRSM

(Please

02 04

200 400 600 800

300 500 700 900

quote

device code as explained

with

stud cathode

P

FIXED OUTLINE

• •

VOLTAGE

(see above)

stud-base

RRM

CODE

diode

06

below

H

CODE

08

-10

digits)

•

BASE POLARITY

N = cathode

= anode

R

10

1000 1200

1100 1300

1 7

FIXED TYPE

12

0

CODE

INTRODUCTION

1.

The

SM2-12PHN/R170
recovery
under

24mm

spring
housings
controlled
good'S'

factors. These devices
applications
switching

2. NOTES

(a)

Square

ON

wave

These ratings are given

rates

of

rise

(b)

Energy
for

the

enable

per

curves,

appropriate

maximum

These

dissipations

(c)

Junction

Single

pulse

for

all rating conditions.

Let: Ep be

T be

Rs

and

T

CASE

the

operating

f =

125-

diode

series comprises fast

all diffused silicon slices

pressure in stud base,

with

flexible leads. All these diodes have

top

reverse recovery characteristics

will

as 'free wheel' diodes in

find

transistor

circuits.

THE RATINGS

ratings

for

oftorward

pulse characteristics

when

operating frequencies and

to

be obtained.

temperature

junction

the

Energy

and pulse

the

appropriate junction

rise, in degrees Centigrade
be

the

steady-state thermal resistance

(junction

to

be

the

case temperature

frequency

T

-tCASE

leading edge linear

current

of

100

and 200AI fLS.

used in conjunction

junction

temperature rise,

rise

per

pulse

temperature rises are

per

pulse

for

width,

in Joules

a given

case)

may

be obtained

temperature

mounted

hat

with

with

those

given

current

from

where

t =

duration
pulse in microseconds

where

A = Area

pulse in microjoules

The

Energy

include
A x

to

(b)

Determination

Junction

the

per

the

reverse recovery loss

6

10-

Joules

forward

energy

temperature
Reverse Recovery Energy
are

given

for

measure

the

cases

voltage
reverse recovery. The Figure
idealised situation
practice
overshoot
the'S'
during
that

the

reverse voltage has an initial

(by an

Factor) and then settles

the

recovery 'tail'. This

full

voltage

recovery.

-_

.....

commutating

di/dt

L

of

reverse recovery loss per

under

reverse loss

pulse

must

also be

per

pulse values.

without

measurement

rise

per

per

where

it

pulse per

pulse

is

not

and current conditions

below

during

reverse recovery. In

amount

inversely proportional

to

method

is present

throughout

....-.-

reverse

...-

typical

waveform

modified

by

adding

volt

per

volt

possible

curves

to

during

shows

the

a steady state

assumes

the

recovery

current

reverse

voltage

per

to

and

to

EpRe

and

the

dissipation

WAY

=

Epf

3.

REVERSE RECOVERY LOSS

On account
affecting
for
forward
suggested

reverse recovery voltage, no allowance

reverse recovery ioss has been

ratings. The

when

of

the

will

number

following

it

is necessary

recovery loss.

(a)

Determination
From

waveforms

from a high

reverse

frequency

voltage

by

Measurement

of

recovery current obtained

present
instantaneous reverse recovery loss
must

be constructed. Let
waveform
additional

then
Total

where

be A microjoules per pulse.

junction

be evaluated

TJ

rise

rt

= 1.77 x 10-

ternperature rise

from:

per

pulse = Forward

4

be

of

circuit variables

procedure is

shunt

(see Note

during

the

area

pulse

\,It

made

in the

to

include reverse

1)

and

recovery, an

waveform

under

this

An

per

pulse can

TJ

rise

+Arj

per

The

values obtained

multiplied

by

from

the

reverse voltage.

these curves

4. NOTE 1

REVERSE RECOVERY LOSS BY MEASUREMENT

When
care

(a) a.c.

are
apparent

measuring

must

coupled

avoided, as

charge (due

the reverse recovered charge

be taken

to

ensure that:

devices such as

they

tend

to

to

the

current
exaggerate the
prior

passage

fOf'\'Vard current).

(b)

The

measuring
dynamic
cope

with

oscilloscope has adequate

range -

the

typically

initial

100 screen heights -

forward

current

overload.

NOTE 2
HOUSING

The
anode
heating

into

lOSS

loss caused

cu

at

the

curves

by

coupling

rrent (which gives rise

high

frequency) has been incorporated

of

forward

between housing and

to

additional

energy loss

must

be

transformers

of

to

without

per

pUlse.