Westcode Semiconductors DFP 170 Data Sheet

@)

WESTCODE

@)

SEMICONDUCTORS

Fast Recovery Stud-Base Diode Type PHN/PHR170

150

amperes average: up

to

1200 volts V

RRM

Technical Publication

DFP170

Issue 1 February

1981

Ratings

(Maximum

values

at

Tj

125°C unless

stated

RATING CONDITIONS

Average R.M.S.

D.C Peak one-cycle surge

Maximum

Operating Storage

Characteristics

forward

current

forward

current

non-repetitive

surge 12t

temperature

range

(Maximum

CHARACTERISTIC

Peak

forward

voltage

drop

Forward

Forward Peak reverse

Thermal

Reverse recovered charge

conduction conduction

current

resistance

threshold voltage slope resistance

values

Half

sine

. { 60%

8.3ms

sme

8.3ms

sine

3ms sine pulse

at

Tj

125°C unless

CONDITIONS

At

470AIFM

VRM = VRRM Junction Case

to

tFM = 550A,di/dt

VRM

= 50V

otherwise)

wave

pulse

(max.)

to

case

heatsink

100°C

heatsink temperature

VARM

10

M';;

VARM

,;;

10

,;;

10

otberwise)

re-applied

I

vots

re-applied

volts

VA 60%

{

VRM

Stat~

= 4OA/p,s

SYMBOL

IF

(AVI

IF

(RMSI IF IFSM(ll IFSM(21 J2t(lI J2t(21

12~(31

Tease

T

,

stg

SYMBOL

VFM Va

r IRRM Rth(j.el Rth(e.hsl

Q,.,

150A

4bOA

460A 4700A 5180A

96500Azs

116500A2s

91000A2

-40

+125°C

-40

+ 150°C

1.35V

1.02V

0.7mO

20mA

0.13°CIW O.04°CIW

75p,C

s

VOLTAGE CODE

Repetitive

Non-repetitive

Ordering

voltage

Information

S

FIXED BASIC

CODE

Typical

code; SM08PHN 170 = 800V

voltage

M

VRRM

VRSM

(Please

02 04

200 400 600 800

300 500 700 900

quote

device code as explained

with

stud cathode

P

FIXED OUTLINE

• •

VOLTAGE

(see above)

stud-base

RRM

CODE

diode

06

below

H

CODE

08

-10

digits)

•

BASE POLARITY

N = cathode

= anode

R

10

1000 1200

1100 1300

1 7

FIXED TYPE

12

0

CODE

INTRODUCTION

1.

The

SM2-12PHN/R170 recovery under

24mm

spring housings controlled good'S'

factors. These devices applications switching

2. NOTES

(a)

Square

ON

wave

These ratings are given

rates

of

rise

(b)

Energy for

the

enable

per

curves,

appropriate

maximum

These

dissipations

(c)

Junction

Single

pulse

for

all rating conditions.

Let: Ep be

T be

Rs

and

T

CASE

the

operating

f =

125-

diode

series comprises fast

all diffused silicon slices

pressure in stud base,

with

flexible leads. All these diodes have

top

reverse recovery characteristics

will

as 'free wheel' diodes in

find

transistor

circuits.

THE RATINGS

ratings

for

oftorward

pulse characteristics

when

operating frequencies and

to

be obtained.

temperature

junction

the

Energy

and pulse

the

appropriate junction

rise, in degrees Centigrade be

the

steady-state thermal resistance

(junction

to

be

the

case temperature

frequency

T

-tCASE

leading edge linear

current

of

100

and 200AI fLS.

used in conjunction

junction

temperature rise,

rise

per

pulse

temperature rises are

per

pulse

for

width,

in Joules

a given

case)

may

be obtained

temperature

mounted

hat

with

those

given

current

from

where

t =

duration pulse in microseconds

where

A = Area

pulse in microjoules

The

Energy

include A x

to

(b)

Determination

Junction

the

per

the

reverse recovery loss

6

10-

Joules

forward

energy

temperature Reverse Recovery Energy are

given

for

measure

the

cases

voltage reverse recovery. The Figure idealised situation practice overshoot the'S' during that

the

reverse voltage has an initial

(by an

Factor) and then settles

the

recovery 'tail'. This

full

voltage

recovery.

-_

.....

commutating

di/dt

L

of

reverse recovery loss per

under

reverse loss

pulse

must

also be

per

pulse values.

without

measurement

rise

per

where

it

pulse per

pulse

is

not

and current conditions

below

during

reverse recovery. In

amount

inversely proportional

to

method

is present

throughout

....-.-

reverse

...-

typical

waveform

modified

by

adding

volt

per

volt

possible

curves

to

during

shows

the

a steady state

assumes

the

recovery

current

reverse

voltage

per

to

and

to

EpRe

and

the

dissipation

WAY

=

Epf

3.

REVERSE RECOVERY LOSS

On account affecting for forward suggested

reverse recovery voltage, no allowance

reverse recovery ioss has been

ratings. The

when

of

the

will

number

following

it

is necessary

recovery loss.

(a)

Determination From

waveforms

from a high

reverse

frequency

voltage

by

Measurement

of

recovery current obtained

present instantaneous reverse recovery loss must

be constructed. Let waveform additional

then Total

where

be A microjoules per pulse.

junction

be evaluated

TJ

rise

rt

= 1.77 x 10-

ternperature rise

from:

per

pulse = Forward

4

be

of

circuit variables

procedure is

shunt

(see Note

during

the

area

pulse

\,It

made

in the

to

include reverse

1)

and

recovery, an

waveform

under

this

An

per

pulse can

TJ

rise

+Arj

per

The

values obtained

multiplied

by

from

the

reverse voltage.

these curves

4. NOTE 1

REVERSE RECOVERY LOSS BY MEASUREMENT

When care

(a) a.c.

are apparent

measuring

must

coupled

avoided, as

charge (due

the reverse recovered charge

be taken

to

ensure that:

devices such as

they

tend

to

the

current exaggerate the prior

passage

fOf'\'Vard current).

(b)

The

measuring dynamic cope

with

oscilloscope has adequate

range -

the

typically

initial

100 screen heights -

forward

current

overload.

NOTE 2 HOUSING

The anode heating

into

lOSS

loss caused

cu

at

the

curves

by

coupling

rrent (which gives rise

high

frequency) has been incorporated

of

forward

between housing and

to

additional

energy loss

must

be

transformers

of

to

without

per

pUlse.

-

100

f'

10

~

"""

'"

I'-..

,I"

200A

1t,

I"-

'\

'\ri"~<'

'"

r--t-

-

1-+-.

r---t'~

0.1

N

I

I-

>£

,,::

u

Q)

"

:J

0-

0.01

~

0.01

pulse

Figure

1 Frequency v. pulse

II~~

T

&'lll-~

.,,,,

jA~

8000A

~~

\

0.1

width,

m.sees

Tease

200AIJLs

square

~<t:

~'?!

..

~

-It;

..

;'<q,,,

I,

'iT

'\

\[\

\

1\

width

85°C

wave

1\

100

~-200A

~ll

I

t---~

f::::

~~

10

55°C

Tease

200AIJLS

square

wave

I

,

ft.,

1\,['),

1\

i'f~

f\

~

..

,,~

\

'-\1

~~

~

I>rt-~

.,

~~

1\

\

\"

v.

.,

111

\

n

pulse

~

m.secs

\

1"'-

\

1\

width

\

1'\

10

0.1

N

I

>£

,,::

u

Q)

"

:J

0-

0.01

~

0.01 0.1

Figure

\

1\

t\

f=j::::

~""'~

8000 A

II

10000 A

I

pulse

width,

2 Frequency

100

10

Q)

'"

~

0.1

.,;

'"

'S

a.

<;

a.

,.

E'

1!

" 0,01

figure

/'

Vv

./

/'

V

/'

0,01

pulse

width,

3 Energy

If/

71/

til!

1/

I/V

/

0.1

m,secs

per

r;p

~

?/.

it(!"/"j

;WI

;/J',-'-

:tV

-.-

r~

'#" ,(

',,/

~II

...

"J

",.<

'#-.-

Jj>"

v

~V

III

1]

~1125°C

/

200AIJLs

square

wave

Ililll

I I

pulse

v.

pulse

III

width

10

100

10000 A

-

~~

I

/v

VI

V

)/

10

/

1/1/

1/1,/

V

R

p

.,;

v

'"

."

E!

V

2

l'?

r-

c.

"

E

~

0.1

0.01

pulse

width,

Figure 4 Temperature

pulse

V

/

0,1

m.secs

width

7

~#y;

,<if'

~

df'~

,

~"17

{

<if'

~

~I

,0'''

1]

==

125°C

-200A/JLs

square

11t'111

rise

per

pulse v.

I

wave

111111

10

'S

§'

E

'S

"

E'

.,

l(l

0

g

a.

~

a.

>-

<:

'"

0.1

0,03

commutating

20

dUdt,

50 100

AIILS

200

Figure

5 Max, reverse energy

per

recovery volt

at

loss

Tj

125°C

per

pulse

100

,~

200A

~~

~f',

10

"-f---

,

I"

f\

0.1

F=

r--

N

J:

'"

~

c:

Q)

::l

C"

!

Figure 6 Frequency

6000A t

0.01

0.Q1 pulse

","

j.j~~

~~

,i"~

5000A

!

IT

0.1

width,

m.secs

Tease

100AIJ.Ls

square

,

il.r'l

'\

~~~

~

-Jb~

~

-i\,"1

"'11

~~

\

v.

pulse width

'\

\\

\

1\

85°C

wave

1\

10

100

3DOA

"-

~~

10

1\

f\

0.1

N

~

I--

~

ai

::l

_

w

0.01

pulse

Figure 7 Frequency

1\

N~~

'I""l't

II

0.1

width,

m.secs

Tease

100AIJ.Ls

square

'</,

\;

1\1

f~~

N~

~

't:1

,,~

\

1:1

~~

~

\

i\

11

\

I

v.

pulse width

55°C

wave

'\

1\

1'\'\

1\

\

1\

[\

10

100

-.

10

~

'j

!)TIll rill

/

1/

0.1

0.01

./

P'"

0.01

pulse

1/

V

/V

Xl

:;

.2.

~

>

2'

Q)

~

Figure 8 Energy per pulse

width,

I~

/

7

0.1

m.secs

;~vL:

~~

"V

~":/

~

~"I/

--r

'(fJ~

'#-~X

'

~v

~/'

IV~/

'#..~

~~

V

III

Tj

= 125°C

100

AIJ.Ls

I

~quarewa

v.

pulse width

ve,

10

100

l==.'ooor7

~~"zS~

/V

//

/

10

1/

II

I

V

~

V

.~

i!!

V

~

Q)

c.

V

E

0.1

!

0.01

pulse

width,

Figure 9 Temperature

pulse

/

V

/

0.1

m.secs

width

~~

~

/

II

1j

100AIJ.Ls

squarew~

rise

per pulse

~

II/'

~y

~}

II

~

,(i!'

~

..

/

;j>"

<

~

,<f>"

II

I

II

~

125°C

v.

10

~

0.1

Q)

"0

., >

:;

~

i

~0.03

3l

·c

~

0.01

~

E

J!l

0.003

c:

V

o

'u

c:

."- 0.001

10

commutating

~~

20

~

r:::::-

dildt,

AI

50

ILS

~

100

200

'

....

""

.

....

,

....

Figure 10 Max. junction temperature

per

pulse

per recovery volt

lj

125°C

rise

at

100

200

A

~

300

A

r------I'--

I"--

10

r---

--

----~~,~~~~

0.1

-f-'

N

=s~~"

-,

I

~

-'~

,;.

c:

"

1"'1

Q)

:J

C"

~

0.01

0.01 0.1

pulse

Figure

11

100

,

~-f

~~I

f'

I":

"

width,

Frequency v. pulse

"l)fk

,\~'?

Il'f..

rn'\:"

..

.,

\"

I

m.secs

~

1;.'1...

"

~

g'

1\

..

85°C

Tease

sine

wave

i

..

[\.

"

[\.\

1\

\

10

width

tl.t:7;:'"

rr(~~;;~

.

~.A

100

~

300

A!

I'

Tease

sine

' I I

t---.J,

I'--

f--

10

""""

~I\

-......

\

0.1

I

~

N

?i

c:

OJ

:J

r=~

==

-

f--

I 0.01

0.01

pulse

Figure 12 Frequency v. pulse

SOOA

1b

'f~,

•.

1-

1\

I,,{

r"~

1'\

N~"

~r"

1ij;

..

;:;;\.

\

.Y

i~~'

r\

~

..

~~~~

y~.,

1\

~I

0.1

width,

m.secs

wave

4;

1\

1\ \

K

width

55°C

,

I

1\

I"

10

20

V/I/

VV

/

VI?

/

0.1

m.secs

di/dt,

1/

~

'J';

.7-

',f"

f,f)"'{

,,'l

r~j;

~

.j?

#"

1/

lJ;fy

1%"

V

/

,#"

1)

/

= 125°C

11~lilne

~f~TI

--=====

~

50

100

A/p.s

10

po'

~

I---"

II>

I---"

OJ

:;

0.1

E

.Q.

ill-

:;

c.

~

>

~

OJ

m

Figure 13 Energy per pulse v. pulse

1l

E

o

:;

o

"

e

"

'f'

o~

oi

~

.c

'" "

"0

Q)

Q;

>

o

"

~

0.01

1000

200

100

50 30

10

P'"

~

f-

V

pulse

width,

~

----

commutating

10

width

200

'000'

..,.

"".

,,,,.

MIN

(915%

AT400A

CQNFIOEHCEI

pulse

width,

m.secs

Figure 14 Temperature rise per pulse v.

Figure

pulse

15

width

Maximum

at

lj

125°C

recovered charge

1.1

"l"f-c------._-

..

_'.-

.. -

__ ' ..

-._'.-

...

"-rr-rr-_.-.-

1.0

t---t--+-I--+-++1-++-I./-' ....

0.9

t---1--+--+-++14-1+---+

0.8

t---t--IV--7'H-+-++++---+---+-t--++H-t-

f---t/r-

~

0.7L/

J!!

1/

(/)

0.6 M<-

__

10 20 50

recovered charge,

Figure 16

10000

3000

Minimum

v--t---+--+-+·+~

-.

+.

"-----"_L-Li-LLU

JLC

S factor

,/

_.-

..

-r-.--,---r-

7f

,L.

-11-.

__

---"_-L--'--'--L.LL.L

100 20

at

li

125°C

-+-+-+H++1

1

"""

I

-1--1-+++++1

1.0m.~~.

1G.13"CIW

0.1

~

P

oj

c:

"

co

0.Q1

.,

"

"-

.5

iii

E

Q;

0.001

-5

0.001

Figure 17

time,

0.Q1

seconds

Junction

0.1

to

case transient thermal impedance

:j!,

,

,I

i

l~

II

.

,

•

I

10

V

,/'

1000

/'

/

~

500

E

to

i

~

5 300

"

'E

~

.E

In

:::l

iil

c:

5

c:

~

.E

100

1.0

max.

Figure 18 Forward voltage characteristic

V

125"C

/

1.2

instantaneous forward voltage, volts

1.4

1.6 1.8

2.0

V

2.2 2.4

of

limit

V

diode

100.51

m.secs

duration

Figure 19 Max. non-repetitive surge current

initial

junction temperature

010.5

i.<1i

21.4

5

cycles at 50Hz

of

surge

125°C

l

:;;

"

i!

10

'"

~

dimensions in mounting

thread weight:

mm

torque: 27-24.5 Nm.

must

250 grams

(inches)

(2.77-2.5 kgf m)

not

be lubricated

at

In

the

interest

of

product

WESTCODE

improvement,

SEMICONDUCTORS

Westcode reserves

0-02 Fair Lawn Avenue, Fair Lawn, Telephone (201)

.....

HAWKER

SIDDELEY

Westinghouse

791-3020

Brake

• Telex

and

New

Jersey

130389

Signal

the

Co_

right

to

07410

Ltd.

change

specifications

at

any

time

without

notice.

Westcode Semiconductors DFP 170 Data Sheet

Specifications and Main Features

Frequently Asked Questions

User Manual