Westcode Semiconductors A0516YC200, A0516YC280 Data Sheet

Date:- 3 July, 2007
WESTCODE
An IXYS Company
Provisional Data
Asymmetric Thyristor
Types A0516YC200 to A0516YC280

Absolute Maximum Ratings

VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)M
I
T(d.c.)
I
TSM2
I2t
(di/dt)
V
RGM
P
G(AV)
P
GM
T
j op
T
stg
Repetitive peak off-state voltage, (note 1) 2800 V
Non-repetitive peak off-state voltage, (note 1) 2800 V
Repetitive peak reverse voltage, (note 1) 10 V
Non-repetitive peak reverse voltage, (note 1) 10 V
OTHER RATINGS
Maximum average on-state current, T
Maximum average on-state current. T
Maximum average on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)
2
t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
I
Critical rate of rise of on-state current (non-repetitive), (Note 6) 2000 A/µs
cr
Critical rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Peak reverse gate voltage 10 V
Mean forward gate power 10 W
Peak forward gate power 30 W
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
=25°C, (note 4)
sink
=55°C, (note 2)
sink
=85°C, (note 2)
sink
=85°C, (note 3)
sink
=25°C, (note 2)
sink
Data Sheet Issue:- 2
MAXIMUM
LIMITS
MAXIMUM
LIMITS
516 A
341 A
196 A
1040 A
850 A
5700 A
1.51×10
3
UNITS
UNITS
A2s
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
=67% V
D
Provisional Data Sheet. Types A0516YC200- to A0516YC280 AD Issue 2 Page 1 of 10 July 2007
, IFG=2A, tr≤0.5µs, T
DRM
initial.
j
case
=125°C.
below 25°C.
j
WESTCODE
WESTCODE An IXYS Company Asymmetric Thyristor Types A0516YC200 to A0516YC280
WESTCODE WESTCODE

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
V
TM
V
T0
r
T
Maximum peak on-state voltage
Threshold voltage - - 1.63 V
Slope resistance - - 0.85
(dv/dt)crCritical rate of rise of off-state voltage 3000 - - VD=80% V
I
I
V
I
V
I
t
t
t
R
DRM
RRM
GT
GT
GD
H
gd
gt
q
thJK
Peak off-state current - - 40 Rated V
Peak reverse current - - 40 Rated V
Gate trigger voltage - - 3.0 V
Gate trigger current - - 400
Gate non-trigger voltage - - 0.25 Rated V
Holding current - - 1000 Tj=25°C mA
Gate-controlled turn-on delay time - 0.5 1.0 µs
Turn-on time - 1.0 2.0
Turn-off time
Thermal resistance, junction to heatsink
- - 2.45 ITM=1000A V
- - 4.44 I
=3000A V
TM
m
T
V I
FG
-38-
-55-
ITM=400A, tp=500µs, di/dt=40A/µs, Vr=10V, V ITM=400A, tp=500µs, di/dt=40A/µs, Vr=10V, V
, linear ramp, gate o/c
DRM
DRM
RRM
=25°C VD=10V, IT=3A
j
DRM
=67% V
D
, IT=1200A, di/dt=200A/µs,
DRM
=2A, tr=0.5µs, Tj=25°C
=80%V
dr
=80%V
dr
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
V/µs
mA
mA
mA
V
µs
µs
- - 0.05 Double side cooled K/W
- - 0.10 Single side cooled K/W
F Mounting force 5 - 9 (See note 2) kN
W
Weight - 90 - g
t
Notes:-
1) Unless otherwise indicated T
=125°C.
j
2) For all other mounting forces, please consult factory.
Provisional Data Sheet. Types A0516YC200- to A0516YC280 AD Issue 2 Page 2 of 10 July 2007
WESTCODE
WESTCODE An IXYS Company Asymmetric Thyristor Types A0516YC200 to A0516YC280
WESTCODE WESTCODE

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade
V
DRM VDSM
V
V
RRM
V
D
DC V 20 2000 10 1250 22 2200 10 1350 24 2400 10 1450 26 2600 10 1550 28 2800 10 1650

2.0 Extension of Voltage Grades

This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

4.0 Repetitive dv/dt

Standard dv/dt is 1000V/µs.

5.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance.

6.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 2000A/µs at any time during turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network.

7.0 Gate Drive

The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 3. Its duration
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
(t
p1
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’ current I magnitude in the order of 1.5 times I
should remain flowing for the same duration as the anode current and have a
G
GT
.
Provisional Data Sheet. Types A0516YC200- to A0516YC280 AD Issue 2 Page 3 of 10 July 2007
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