Critical rate of rise of on-state current (non-repetitive), (Note 6)2000A/µs
cr
Critical rate of rise of on-state current (repetitive), (Note 6)1000A/µs
Peak reverse gate voltage10V
Mean forward gate power10W
Peak forward gate power30W
Operating temperature range-40 to +125°C
Storage temperature range-40 to +150°C
=25°C, (note 4)
sink
=55°C, (note 2)
sink
=85°C, (note 2)
sink
=85°C, (note 3)
sink
=25°C, (note 2)
sink
Data Sheet Issue:- 2
MAXIMUM
LIMITS
MAXIMUM
LIMITS
516A
341A
196A
1040A
850A
5700A
1.51×10
3
UNITS
UNITS
A2s
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
=67% V
D
Provisional Data Sheet. Types A0516YC200- to A0516YC280 AD Issue 2Page 1 of 10July 2007
, IFG=2A, tr≤0.5µs, T
DRM
initial.
j
case
=125°C.
below 25°C.
j
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WESTCODE An IXYS CompanyAsymmetric Thyristor Types A0516YC200 to A0516YC280
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Characteristics
PARAMETERMIN.TYP.MAX. TEST CONDITIONS (Note 1)UNITS
V
TM
V
T0
r
T
Maximum peak on-state voltage
Threshold voltage--1.63V
Slope resistance--0.85
(dv/dt)crCritical rate of rise of off-state voltage3000--VD=80% V
I
I
V
I
V
I
t
t
t
R
DRM
RRM
GT
GT
GD
H
gd
gt
q
thJK
Peak off-state current--40Rated V
Peak reverse current--40Rated V
Gate trigger voltage--3.0V
Gate trigger current--400
Gate non-trigger voltage--0.25Rated V
Holding current--1000 Tj=25°CmA
Gate-controlled turn-on delay time-0.51.0µs
Turn-on time-1.02.0
Turn-off time
Thermal resistance, junction to heatsink
--2.45ITM=1000AV
--4.44I
=3000AV
TM
mΩ
T
V
I
FG
-38-
-55-
ITM=400A, tp=500µs, di/dt=40A/µs, Vr=10V,
V
ITM=400A, tp=500µs, di/dt=40A/µs, Vr=10V,
V
, linear ramp, gate o/c
DRM
DRM
RRM
=25°CVD=10V, IT=3A
j
DRM
=67% V
D
, IT=1200A, di/dt=200A/µs,
DRM
=2A, tr=0.5µs, Tj=25°C
=80%V
dr
=80%V
dr
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
V/µs
mA
mA
mA
V
µs
µs
--0.05Double side cooledK/W
--0.10Single side cooledK/W
FMounting force5-9(See note 2)kN
W
Weight-90-g
t
Notes:-
1) Unless otherwise indicated T
=125°C.
j
2) For all other mounting forces, please consult factory.
Provisional Data Sheet. Types A0516YC200- to A0516YC280 AD Issue 2Page 2 of 10July 2007
WESTCODE
WESTCODE An IXYS CompanyAsymmetric Thyristor Types A0516YC200 to A0516YC280
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
V
DRM VDSM
V
V
RRM
V
D
DC V
202000101250
222200101350
242400101450
262600101550
282800101650
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 2000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 3. Its duration
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
(t
p1
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
should remain flowing for the same duration as the anode current and have a
G
GT
.
Provisional Data Sheet. Types A0516YC200- to A0516YC280 AD Issue 2Page 3 of 10July 2007
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8.0 Computer Modelling Parameters
8.1 Device Dissipation Calculations
T
2
4
I
=
AV
Where VT0=1.63V, rT=0.85mΩ,
R
= Supplementary thermal impedance, see table below and
th
00
2
2
2
rff
⋅⋅
T
WrffVV
⋅⋅⋅++−
AVTTT
and:
W
AV
=
∆
R
max
th
TTT
−=∆
Kj
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle30°60°90°120°180°270°d.c.
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
0.0710.0690.0650.0610.0570.0530.05
0.120.1190.1150.1110.1070.1030.1
0.0530.0520.05160.05130.0505
0.1030.1020.10170.10130.1005
Form Factors
Conduction Angle30°60°90°120°180°270°d.c.
Square wave
Sine wave
8.2 Calculating VT using ABCD Coefficients
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for V
that plotted.
given below:
T
agree with the true device characteristic over a current range, which is limited to
T
25°C Coefficients125°C Coefficients
A
B
C
D
3.462.4521.731.411.151
3.982.782.221.881.57
vs. VT, on page 6 is represented in two ways;
T
and rT tangent used for rating purposes and
T0
-1.436149
1.107088
2.172417×10
-0.1872504
()
A
B
-3
C
D
0.7634106
0.3274219
1.623348×10
-0.06984001
IDICIBAV⋅+⋅+⋅+=ln
TTTT
-3
T
in
Provisional Data Sheet. Types A0516YC200- to A0516YC280 AD Issue 2Page 4 of 10July 2007
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p
p
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8.3 D.C. Thermal Impedance Calculation
−
=
np
∑
=
p
1
Where p = 1 to n, n is the number of terms in the series and:
t = Duration of heating pulse in seconds.
r
= Thermal resistance at time t.
t
= Amplitude of pth term.
r
= Time Constant of rth term.
τ
The coefficients for this device are shown in the tables below:
D.C. Double Side Cooled
Term
r
p
τ
p
1234
0.02000569.923438×10
0.33916890.12690730.035621312.562946×10
1
pt
t
τ
p
−⋅=
err
-3
0.014337154.284403×10
-3
-3
Term
r
p
τ
p
D.C. Single Side Cooled
12345
0.061576978.431182×10
2.1361321.2128980.15124080.042442.889595×10
-3
0.010313150.016138065.181088×10
-3
-3
Provisional Data Sheet. Types A0516YC200- to A0516YC280 AD Issue 2Page 5 of 10July 2007
WESTCODE
WESTCODE An IXYS CompanyAsymmetric Thyristor Types A0516YC200 to A0516YC280
3540 Bassett Street
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
The information contained herein is confidential and i s protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digi t/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.