Westcode Semiconductors M0334S120, M0334S, 180, M0334RX120, M0334RX180 Data Sheet

Fast Recovery Diode Stud
Types M0334S/RX120 to M0334S/RX180
The data sheet
on
the subsequent pages
of
this document is a scanned copy of existing
data for this product.
This data reflects the old part number for this product which is: SM12-18PHN/R174.
This part number must NOT be used for ordering purposes - please use the ordering
particulars detailed below.
of
Only S/RJ outline drawing (W24)
The following
Where any information
The limitations
this data are
links will direct you to the appropriate outline drawings
Outline W22 -
Outline W24 -
on
the product matrix page differs from that
:X"
flag top ceramic stud
:X"
leaded ceramic stud
as
follows:
in
datasheet
in
the following data,
the product matrix must be considered correct
An electronic data sheet for this product
For further information
presently
on
this product, please contact your local ASM or distributor.
in
preparation.
is
Alternatively, please contact Westcode as detailed below.
M0334
Fixed Type Code
Typical
IXYS
Edisonstral1e 15 D-68623 Lampertheim Tel:
Fax: +49 6206 503-627 E-mail: marcom@ixys.de
IXYS Corporation
3540 Bassett Street Santa Tel:
Fax: E-mail:
The information contained herein is confidential and permission
In
Devices with a suffix code (2-letter, 3-letter or
and
Order Code: M0334RJ140, Reverse polarity,
Semiconductor
+496206
+1
+1
the interest
limits contained in this
503-0
Clara CA 95054 USA
(408) 982 0700
(408) 496 0670
sales@ixys.net
of
and
in
the manner permitted by the proprietors Westcode Semiconductors Ltd.
of
product improvement, Westcode reserves the right
report
S/RC -
S/RJ -
GmbH
letter/digiUletter combination) added to their generic code
Ordering Particulars
S/RX
:X"
flag top ceramic stud
:X"
leaded ceramic stud
E
An
t:'lIXYS Company
www.westcode.com
www.ixys.com
is
protected
by
Copyright. The information may not be used
to
change specifications at any time without prior notice.
••
Voltage code
V
/100 Fixed Code
RRM
12-18
:X"
leaded ceramic stud, 1400V V
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
E
E-mail: WSLsales@westcode.com
Westcode Semiconductors Inc
E-mail: WSl.sales@westcode.com
or
disdosed except with the written
are
not necessarily subject
to
the conditions
0
RRM
Tel: +44 (0)1249 444524
Fax: +44
Long Beach CA
(0)1249 659448
3270 Cherry Avenue
Tel:
Fax:
© Westcode Semiconductors Ltd.
90807 USA
+1
(562) 595 6971
+1
(562) 595 8182
l
,
Rating
Report:
Origin:
Written
by:
The SM12-l8PHN/R spring The
pressure
report
Ratings
Voltage
Grades
80NR15
Jill
in a stud
supersedes
QUALITY
(Issue
Diode Type
diode
series
base,
Rating
Report
RATINGS
EVALUATION
2)
SM12-18PHN/R174
Checked:
employs
top
hat
housing
No. 80NR15.
AND
CHARACTERISTICS
LABORATORY
a 24
rom with
silicon
flexible
Date: Pages:
18th
November, 1986 22
APproved'~
slice
mounted
lead.
under
12-18 1300-1900V
IF(AV);
IF(rms)
IF
d.c.
I
FSM
I
FSM
12t t
12t t 12t t
Te
Operating
T t
Non-operating
s 9
Single max. max.
t = 10
::
10
t
:=
10 ms; 10
::
ms rns
ms;
3
ms;
Range
phase;
half half
T
J
T
)initial)
T
J
50 Hz, 180 C
sinewave; sinewave;
(initial)
(initial)
::
::
:=
o
half
T
)initinl)
T
)inHinl)
125°C 125°C 125°C
sinewave;
125°C V
'"
125°C
=
V
RM
V
1:.
Rr4
V
.~
RM
T
0.6V 10V 10V
CASE
V
RRM
:=
RM
Hr·'
::
H1AX)
0.6V 10V
RRM
1200-l800V
400A
400A
(MAX)
:
4950A
x
91
103A2S
x
103A2S
x lO3
to
125°C
to
150°C
101 122
-40
-40
4500A
2
S
A
- 2 -
Characteristic
(maximum
V
fM
Rth(J_C)
Rth(C-HS) I
RRM
Mounting Outline
values
125"C
' IfM =
: T
=
J
torque
drawing
s
unless
470A
125°C: 550A
TVJ
V
RM
;dI/dt
otherwise
""
125°C
=
VRRM(Max)
= 40A/us
stated)
1.00V O.74mohms
1.35V
O.04°C/W 20mA 160uC
2.5 -2.77 lOOA280
Kg.f.m.
JEDEC
Outline
No.
CONTENTS
Ratings
Voltage
2.
Introduction
3.
Notes
(a)
(b)
(o)
40
Raverse
(a) (b)
Limit
Forward
Transient
Surge
Rating
Recovered
5.
Factor
Reverse
Square Square Square Square Energy
Energy
Sine Sine Sine
wave wave wave wave per
per wave wave wave
Outline
and
characteristics
grade
on
table
the Square Energy Housing
Recover~
Determination
Design
Characteristic
Thermal
Charge
recovery
frequency frequency frequency
frequency pulse pulse
frequency frequency energy
drawing
Ratings
wave
ratings
per
pulse
Loss
Loss
Method
Impedance
energy
rating rating
rating
rating
200A/uS
IOOA/uS
rating rating
per
pulse
- 3 -
characterishc$
by Measurement
per
pulse
0
90
e Case 200A/uS
60°C Case 200A/uS
0
90
e Case lOOA/uS
0
60
e Case lOOA/uS
90"C Case
n
60
e Case
Page
1 ,
4
5
'5
5 5
5 6
7
8
9
10
11
12 13
14
15
16
17
18
19
20
21 22
2
80NRl5
PI,
4
Old pp Old
p9
Old
pH
Old
p12
Old
p13
Old
p14
(issue
Max V
RWM
1) grade
TB(operating
5,6,7,8
Curves Omitted redrawn redrawn redrawn
changes:
changed
omitted
replaced
redrawn
range)
on
MIN
separate
changed
sheets
Old p15 Old Old p26 Old
p20,
21
pp16-27
omitted omitted omitted redrawn
- 4 -
Voltage
Ratings
Voltage
12
14 16 18
Class
V
RfIM
V
1200 1400
1600
1800
V
RSM
V
1300 1500 1700 1900
supply
This
has
Report
been
is
applicable
agreed
to
higher
by
Sales/Production.
or
lower
voltage
grades
when
2.0
Introduction
The
all
diffused
recovery
3.0
Notes
(a)
diode
series
silicon
characteristics
on
the
Ratinqs
Square
wave
comprises
slices.
with
ratings
- 5 -
fast All good
recovery
these
US"
diodes
factors.
stud
have
based
devices
controlled
with
reverse
forward
(b)
obtained
(c)
gives
into
4.0
Reverse
On voltage, The
following
reverse
These
current Energv These
for
Let:
Then W
T
CASE
Housing The
loss
rise
the
curves
Recovery
account
no
allowance
procedure
recovery
ratings
of
per
pUlse
curves
conditions
Ep
be
the
width
AV
= 125 -
=
in
Ep
Loss
caused
to
additional
of
Loss
of
the
for
loss.
are
given
for
200 and 100A/uS.
characteristics
enable
not
Energy
joules,
rapid
covered per
and f
estimation
x f
Ep
x f x Rth
by
coupling
heating
forward
number
reverse
is
energy
of
circuit
recovery
recommended
leading
by
pulse
be
the
between at
high
loss
variables
for
edge
linear
of
device
the
frequency
for a given
repetition
housing frequency)
per
pulse.
affecting
loss
has
been
use
where
rates
dissipation
ratings.
current
rate
and anode
has
made
it
is
necessary
of
and
current
been
reverse
in
these
rise
of
to
be
pulse
(which
incorporated
recovery
ratings.
to
include
(a)
Determination From
(see
Note
reverse
waveform
evaluated
t =
duration
A Area
f
rated
The
total
W
(TOT)
waveforms
1)
and
recovery
be A joules
from:
of
under
reverse frequency dissipation
W(original)
by Measurement
of
recovery reverse loss
reverse
voltage
waveform must be
per
pulse.
recovery
loss
at
the
is
now
+ Axf
current
present A
loss
waveform
original
given
obtained
during
cons·!;ructed.
new
case
per
per
pulse
case
temperature
by
from a
recovery,
temperature
pulse
in
in
high
an
Let
the
can
then
microseconds
joules
(W.S.)
frequency
shunt instantaneous area
under
be
this
Note 1
- 6 -
Reverse
Recovery
This
recovery
that:
(a)
(b)
(c)
(b)
Design In
circumstances conditions, from
curves Let E be
page
12).
Let f be
Loss
device
has
current.
a.c.
coupled
affected The
measuring
100
screen
without Measurement
out
with
diode
anode
Method
or
for
on
page
the
the
by Measurement
a low
When
measuring
devices
by
prior
oscilloscope
heights -to
overload.
of
reverse
an
appropriate
to
cathode.
where
design
value
purposes,
12.
of
operating
reverse
such
passage
recovery
it
is
energy
frequency
recovered
the
charge
as
current
of
high
has
cope
with
snubber
not
possible
the
additional
per
reverse
in
charge care
transformers
amplitude
adequate
the
voltage of
O.luF,
'bo
cycle
Hz
and
must
dynamic
initial
waveform
5 ohms
measure
losses
in
peak
reverse
be
taken
forward
are
current.
to
no·t
range -typically
forward
current
should
connected
voltage may
be
.
joules
(curves
ensure
be
carried
across
and
current
estimated
on
Then
Where
original
TeASE
TeASE
is
the
new ~ TeASE
new
is
the
case
temperature
original required
given
- ERth x f maximum
with
case
the
temperature
frequency
and
ratings.
TeASE
- 7 -
~ORWARD
CHARACTERISTIC
OF
LI~IT
DEVICE
1
MAXIMUM
INSTANTANEOUS
~ORWARD
~OLrAGE
/
~OLTS
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