WEJ 2SD596 Schematic [ru]
WEJ ELECTRONIC CO.,LTD
RoHS
2SD596 TRANSISTOR (NPN)
FEATURES
Power dissipation
P
: 0.2 W (Tamb=25℃)
CM
Collector current
I
: 0.7 A
CM
Collector-base voltage
V
: 30 V
(BR)CBO
Operating and storage junction temperature range
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2SD596
2
0
.
1
2.80¡ À0.05
5
2
0
.
1.60¡ À0.05
0
À
¡
5
9
.
0
9
.
1
5
0
.
0
À
¡
2
9
.
5
2
3
.
0
T
, T
: -55℃ to +150℃
J
stg
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
V
V
V
V
V
(BR)CBO
Ic= 1 mA , IB=0 25 V
(BR)CEO
(BR)EBO
V
I
CBO
V
I
EBO
h
* VCE= 1V, IC= 100mA 110 400
FE(1)
h
* VCE=1V, IC= 700mA 50
FE(2)
* IC=700 mA, IB= 70mA 0.6 V
CE(sat)
* VCE=6V, IC=10mA 0.6 0.7 V
BE(on)
Ic=100µA, IE=0
I
= 100µA, IC=0
E
=30 V , IE=0 0.1
CB
= 5V , IC=0 0.1
EB
30 V
5 V
µA
µA
V
Transition frequency
f
T
= 6V, IC= 10mA 140 MHz
CE
* Pulse test : Pulse width ≤350µs, Duty Cycle≤2%.
CLASSIFICATION OF h
FE
(1)
Marking DV1 DV2 DV3 DV4 DV5
Range
110-180 135-220 170-270 200-320 250-400
WEJ ELECTRONIC CO.
Http:// www.wej.cn E-mail:wej@yongerjia.com
Loading...