WEITRON KTD1898 Schematic [ru]
KTD1898
Epitaxial Planar NPN Transistors
ABSOLUTE MAXIMUM RATINGS
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
(Ta=25 )
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Limits
100
80
5
1
2
0.5
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
Unit
Vdc
Vdc
Vdc
A(DC)
A (Pulse)*
W
Junction Temperature,
* Single pulse Pw = 20ms
Storage Temperature
ELECTRICAL CHARACTERISTICS
Parameter
Collector-Base Breakdown Voltage(Ic=100uA)
Collector-Emitter Breakdown Voltage(Ic=1mA)
Emitter-Base Breakdown Voltage(I =100uA)
Collector Cutoff Current(V =80V)
Emitter Cutoff Current(V =4V)
CB
EB
E
T ,
Tstg
j
(Ta=25 unless otherwise noted )
%
C
Symbol
BV
BV
BV
I
CBO
I
EBO
CBO
CEO
EBO
150,
-55 to +150
Min
100
80
5
-
-
Typ
-
-
-
-
-
Max
-
-
-
1
1
C
Unit
V
V
V
uA
uA
WEITRON
http://www.weitron.com.tw
KTD1898
%
ELECTRICAL CHARACTERISTICS
(Ta=25 unless otherwise noted )
C
Parameter
DC Current Gain (V =3V, Ic=500mA)
Collector-Emitter Saturation Voltage (Ic=500mA, I =20mA)
Transition Frequency (V =10V, Ic=50mA, f=100MHz)
Output Capacitance (V =10V, I =0A, f=1MHz)
CLASSIFICATION OF h
Marking
Rank
Range
CE
B
CE
CB E
FE
ZO
O
70-140
ELECTRICAL CHARACTERISTIC CURVES
(Countinued)
Typ
Symbol
h
FE
V
CE(sat)
f
T
Cob
ZY
Y
120-240
Min
70
-
-
-
-
-
100
20
ZG
GR
200-400
Max
400
0.4
-
-
Unit
-
V
MHz
pF
1000
(mA)
100
C
10
1
C OLLE CTOR C UR R E NT : I
0.1
0 0.2 0.4 0.6 0.8 1.0 1. 2 1.4 1.6 1.8 2. 0
B AS E T O E MIT TE R V OL T AG E : V
FIG.1 Grounded Emitter Propagation
Characteristics
Ta=25°C
V
C E
=5V
BE
(V )
1.0
A)
(
C
0.8
0.6
0.4
0.2
C OLLE CTOR C UR R E NT : I
0
C OLLE C TO R TO EMIT TE R VO LT AG E : V
2408106
Ta=25°C
6mA
5mA
4mA
3mA
2mA
1mA
IB=0mA
C E
(
V)
FIG.2 Grounded Emitter Output
Characteristics
WEITRON
http://www.weitron.com.tw
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