WEITRON ESDA6V8V5, ESDA5V6V5, ESDA6V2V5 Schematic [ru]
ESDA6V8V5 Series
Quad Array for ESD Protection
P b
Lead(Pb)-Free
This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability.
It is intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its quad junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at apremium.
Features:
* Low Leakage < 1µA @ 3 Volt
* Breakdown Voltage: 6.8 Volt @ 1 mA
* ESD Protection Meeting IEC61000-4-2 - Level 4
Peak Pulse Power
100 Watts
Reverse WorkingVoltage
6.8VOLTS
5
4
1
2
3
SOT-553
Mechanical Characteristics:
* Void Free, Transfer-Molded, Thermosetting Plastic Case
* Corrosion Resistant Finish, Easily Solderable
* Package Designed for Optimal Automated Board Assembly
* Small Package Size for High Density Applications
SOT-553 Outline Dimensions
D
5 4
1 2
G
A
B
S
3
K
J
C
Dim
A
B
C
D
G
J
K
S
SOT-553
Min
1.50
1.10
0.50
0.17
0.50 REF
0.08
0.10
1.50
Unit:mm
Max
1.70
1.30
0.60
0.27
0.16
0.30
1.70
WEITRON
http://www.weitron.com. tw
1/3 09-Oct-07
ESDA6V8V5 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
V
I
PP
V
RWM
I
R
V
BR
I
T
V
I
F
V
Z
ZT
I
ZK
Z
ZK
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
C
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
Maximum Temperature Coefficient of V
BR
Forward Current
Forward Voltage @ I
F
Maximum Zener Impedance @ I
Reverse Current
Maximum Zener Impedance @ I
MAXIMUM RATINGS
Peak Power Dissipation (8 X 20 s @ TA = 25°C) (Note 1) P
Steady State Power - 1 Diode (Note 2) P
Thermal Resistance Junction to Ambient
Above 25°C, Derate
Maximum Junction Temperature T
Operating Junction and Storage Temperature Range TJT
ESD Discharge MIL STD 883C - Method 3015-6
Lead Solder Temperature (10 seconds duration) T
Parameter
PP
RWM
T
BR
F
ZT
ZK
(TA = 25°C unless otherwise noted)
Characteristic
IEC1000-4-2, Air Discharge
IEC1000-4-2, Contact Discharge
I
I
F
BR
V
RWM
I
V
R
F
I
T
I
PP
V
VCV
Uni-Directional
Symbol Value Unit
100 W
300 mW
370
2.7
150 °C
-55 to +150 °C
16
16
9
260 °C
°C/W
mW/°C
kV
R
Jmax
V
PK
D
JA
stg
PP
L
ELECTRICAL CHARACTERISTICS
Breakdown Voltage
V
@ 1 mA (Volts)
Device
ESDA5V6V5
ESDA6V2V5
ESDA6V8V5
1. Non-repetitive current per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, PDwill be 25%. Mounted on FR-4 board with min pad.
3. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25°C
BR
Min Nom Max V
5.32 5.6 5.88 3.0 1.0 10.5 10 90 1.3
5.89 6.2 6.51 4.0 0.5 11.5 9.0 80 1.3
6.46 6.8 7.14 4.3 0.1 12.5 8.0 70 1.3
(TA = 25°C)
Leakage Current
RWMIRWM
I
RM
Typ Capacitance
@ 0 V Bias
@ V
RM
( A) VC(V) IPP (A) (pF) (V)
VCMax @ I
PP
(Note 3)
Device Marking
Item Marking Eqivalent Circuit diagram
ESDA5V6V5
ESDA6V2V5
ESDA6V8V5
VE
1
2
3
WEITRON
http://www.weitron.com. tw
2/3 09-Oct-07
5
4
Max
@ IF=
V
F
200 mA
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