Weitron 2SK3019 Schematic [ru]
N-Channel MOSFET
2SK3019
P b
Lead(Pb)-Free
FEATURES:
* Low on-resistance
* Fast switching speed
* Low voltage drive makes this device ideal for portable equipment
* Easily designed drive circuits
* Easy to parallel
3
1
2
1. GATE
2. SOURCE
3. DRAIN
SOT-523(SC-75)
Maximum Ratings (T
Characteristic Symbol
Drain-Source Voltage V
Gate-Source Voltage
Continuous Drain Current
Thermal Resistance, Junction-to-Ambient
Total Power Dissipation 150 mW
Junction temperature Range T
Storage Temperature Range Tstg -55 to +150 °C
=25°C unless otherwise specified)
A
R
V
DSS
GSS
I
D
θJA
P
D
Values Unit
30 V
±20
100
833
j
150
Device Marking
2SK3019 = KN
V
mA
°C/W
°C
WEITRON
http://www.weitron.com.tw
1/4 03-Jun-2011
2SK3019
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage
VGS=0V,ID=10µA
Gate-Threshold Voltage
=3V, ID=100µA
V
DS
Gate-Source Leakage Current
V
=±20V, VDS=0V
GS
Zero Gate Voltage Drain Current
=0V, VDS=30V
V
GS
Drain-Source On-Resistance
=4V, ID=10mA
V
GS
VGS=2.5V, ID=1mA
Forward Tranconductance
=3V, ID=10mA
V
DS
Input Capacitance
V
=5V, VGS=0V, f=1MHz
DS
Output Capacitance
V
=5V, VGS=0V, f=1MHz
DS
Reverse Transfer Capacitance
=5V, VGS=0V, f=1MHz
V
DS
SWITCHING
Turn-on Time
VDD=5V, RL=500Ω, ID=10mA, VGS=5V, Rg=10Ω
V
V
th(GS)
I
GSS
I
DSS
R
DS(on)
gfs
C
C
C
T
D(on)
DS
iss
oss
rss
30
0.8
-
-
20
-
-
-
-
-
-
-
--
- -
13
9
4
15- -
-
1.5
±1 μA
1 µA
8
13
-
-
-
V
V
Ω
ms
pF
Rise Time
VDD=5V, RL=500Ω, ID=10mA, VGS=5V, Rg=10Ω
VDD=5V, RL=500Ω, ID=10mA, VGS=5V, Rg=10Ω
Fall Time
VDD=5V, RL=500Ω, ID=10mA, VGS=5V, Rg=10Ω
t
r
T
t
r
35- -
ns
80- -
80- -
WEITRON
http://www.weitron.com.tw
2/4 03-Jun-2011
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