IBM and IBM products are registered trademarks of International Business Machines
Corporation.
Macintosh and Power Macintosh are registered trademarks of Apple Computer, Inc.
VINC and VINC products are registered trademarks of V, Inc.
VESA, EDID, DPMS and DDC are registered trademarks of Video Electronics Standards
Association (VESA).
Energy Star is a registered trademark of the US Environmental Protection Agency (EPA).
No part of this document may be copied, reproduced or transmitted by any means for any
purpose without prior written permission from VINC.
FCC INFORMATION
This equipment has been tested and found to comply with the limits of a Class B digital device,
pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable
protection against harmful interference in a residential installation. This equipment generates,
uses and can radiate radio frequency energy, and if not installed and used in accordance with
the instructions, may cause harmful interference to radio communications. However, there is
no guarantee that the interference will not occur in a particular installation. If this equipment
does cause unacceptable interference to radio or television reception, which can be
determined by turning the equipment off and on, the user is encouraged to try to correct the
interference by one or more of the following measures -- reorient or relocate the receiving
antenna; increase the separation between equipment and receiver; or connect the into an
outlet on a circuit different from that to which the receiver is connected.
FCC WARNING
To assure continued FCC compliance, the user must use a grounded power supply cord and
the provided shielded video interface cable with bonded ferrite cores. Also, any unauthorized
changes or modifications to Amtrak products will void the user’s authority to operate this
device. Thus VINC Will not be held responsible for the product and its safety.
CE CERTIFICATION
This device complies with the requirements of the EEC directive 89/336/EEC with regard to
“Electromagnetic compatibility.”
SAFETY CAUTION
Use a power cable that is properly grounded. Always use the AC cords as follows – USA (UL);
Canada (CSA); Germany (VDE); Switzerland (SEV); Britain (BASEC/BS); Japan (Electric
Appliance Control Act); or an AC cord that meets the local safety standards.
VIZIO L42HDTV10A,GV42L HDTV Service Manual
Chapter 1 Features
1. Built in TV channel selector for TV viewing.
2. Simulatnueous display of PC and TV images.
3. Connectable to PC’s analog RGB port .
4. Built in S-video, HDTV, composite video, HDMI and TV out.
5. Built in auto adjust function for automatic adjument of screen display.
6. Smoothing function enables display of smooth texts and graphics even if
image withresolution lower than 1366x768 is magnified.
7. Picture In Picture (PIP) funtion to show TV or VCR images.
8. Power saving to reduce consumption power too less than 3W.
9. On Screen Display: user can define display mode (i.e. color, brightness,
contrast, sharpness, backlight), sound setting, PIP, TV channel program,
aspect and gamma or reset all setting.
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Chapter 2 Specification
1. LCD CHARACTERISTICS
Type: 42.0 WXGA TFT LCD
Size: 42.02inch
Display Size: 42.02 inches (1067.308mm) diagonal
Outline Dimension: 1006 mm (H) x 610 mm (V) x 56 mm (D) (Typ.)
for reads until the command register contents are altered. If program-fail or erase-fail happen, the
write of F0H will reset the device to abort the operation. A valid command must then be written to
place the device in the desired state.
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4. READING ARRAY DATA
The device is automatically set to reading array data after device power-up. No commands are
required to retrieve data. The device is also ready to read array data after completing an
Automatic Program or Automatic Erase algorithm. After the device accepts an Erase Suspend
command, the device enters the Erase Suspend mode. The system can read array data using the
standard read timings, except that if it reads at an address within erase suspended sectors, the
device outputs status data. After completing a programming operation in the Erase Suspend mode,
the system may once again read array data with the same exception. See Erase Suspend/Erase
Resume Commands” for more information on this mode. The system must issue the reset
command to re-enable the device for reading array data if Q5 goes high, or while in the auto select
mode. See the "Reset Command" section, next.
5. RESET COMMAND
Writing the reset command to the device resets the device to reading array data. Addresses bits
are don't care for this command. The reset command may be written between the sequence
cycles in an erase command sequence before erasing begins. This resets the device to reading
array data. Once erasure begins, however, the device ignores reset commands until the operation
is complete. The reset command may be written between the sequence cycles in a program
command sequence before programming begins. This resets the device to reading array data
(also applies to programming in Erase Suspend mode). Once programming begins, however, the
device ignores reset commands until the operation is complete. The reset command may be
written between the sequence cycles in an SILICON ID READ command sequence. Once in the
SILICON ID READ mode, the reset command must be written to return to reading array data (also
applies to SILICON ID READ during Erase Suspend). If Q5 goes high during a program or erase
operation, writing the reset command returns the device to reading array data (also applies during
Erase Suspend).
WM8776 Application
The WM8776 is a high performance, stereo audio codec with five channel input selector. The
WM8776 is ideal for surround sound processing applications for home hi-fi, DVD-RW and other
audiovisual equipment. Etch ADC channel has programmable gain control with automatic level
control. Digital audio output word lengths from 16-32 bits and sampling rates from 32kHZ to 96KHZ
are supported. The DAC has an input mixer allowing an external analogue signal to be mixed with
the DAC signal. There are also Headphone and line outputs, with control for the headphone
The WM8776 supports fully independent sample rates for the ADC and DAC. The audio data
interface supports I2S, left justified, right justified and DSP formats.
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BLOCK DIAGRAM
1. Audio sample rate
The master clock forWM8776 supports DAC and ADC audio sampling rates 256fs to 768fs, where
fs is the audio sample frequency (DACLRC or ADCLRC) typically 32KHZ, 44.1KHZ, 48KHZ or
96KHZ (the DAC also supports operation at 128fs and 192fs and 192KHZ sample rate). The
master clock is used to operate the digital filters and the noise shaping circuits.
In slave mode the WM8776 has a master detection circuit that automatically determines the
relationship between the master clock frequency and the sampling rate (to within +/- 32 system
clocks) If there is a greater than 32 clocks error the interface is disabled and ADCLRC/DACLRC
for optical performance, although the WM8776 is tolerant of phase variations or jitter on this clock.
Table shows the typical master clock frequency inputs for the WM8776
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2. DIGITAL AUDIO INTERFACE
1. Slave mode
The audio interfaces operations in either slave mode selectable using the MS control bit. In slave
mode DIN is always an input to the WM8776 and DOUT is always an output. The default is Slave
mode. In slave mode (ms=0) ADCLRC, DACLRC, ADCBCLK, DACBCLK are input to the WM8776
DIN and DACLRC are sampled by the WM8776 on the rising edge of DACBCLK; ADCLRC is
sampled on the rising edge of ADCBCLK. ADC data is output on DOUT and changes on the falling
edge of ADCBCLK. By setting control bit BCLKINV the polarity of ADCBCLK and DACBCLK may
be reversed so that DIN and DACLRC are sample on the falling edge of DACBCLK, ADCLRC is
sampled on the falling edge of ADCBCLK and DOUT changes on the rising of ADCBCLK
Slave mode
as shown in the following figure.
2. 2 Wire serial control mode
The wm8776 supports software control via a 2-wire serial bus. Many devices can be controlled by
the same bus, and each device has a unique 7-bit address (this is not the same as the 7-bit
address of each register in the wm8776). The wm8776 operates as a slave device only.
2-wire serial interface as shown in the following figure.
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The wm8776 has two possible device addresses, which can be selected using the CE pin
In the L32 LCD TV CE pin is LOW (device address is 34h)
In the L32 wm8776 has 2-wire interface
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MT8293 Application
The MT8293 provides a complete solution for receiving HDMI compliant digital audio and video.
Specialized audio and video processing is available within the MT8293 to easily and cost effectively
adds HDMI capability to consumer electronics devices such as digital TVs, plasma displays, LCD
TVs and projectors.
BLOCK DIAGRAM
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1. TMDS Digital Core
The core performs 10-to-8-bit TMDS decoding on the audio and video received from the three
TMDS differential data lines along with a TMDS differential clock. The TMDS core supports link
clock rates to 165MHZ, including CE modes to 720P/1080I/1080P.
2. Active port detection
The Pane Link core detects an active TMDS clock and actively toggling DE signal. These states
are accessible in register bits, useful for monitoring the status of the HDMI input or for
automatically powering down the receiver. The 5V supply from the HDMI connector is used as a
cable detect indicator. The MT8293 can monitor the presence of this+5V supply and, if and when
necessary, provide a fast audio mute without pops when it senses the HDMI cable pulled. The
microcontroller can also poll registers in the MT8293 to check whether an HDMI cable is
connected.
3. HDCP Decryption
The MT8293 external EEPROM for encrypt HDCP keys. HDCP decryption contains all
necessary logic to decrypt the incoming audio and video data. The decryption process is
entirely controlled by the host microprocessor through a set sequence of register reads
and wires through the DDC channel. Pre-programmed HDCP keys and key Selection
Vector are used in the decryption process. A resulting calculated to an XOR mask during
each clock cycle to decrypt the audio/video data in sync with the host.
4. Video Data Conversion and Video Output
The MT8293 can output video in many different formats as shown in the following figure.
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The receiver can also process the video data before it is output as show below figure
5. I2c Interface to Display Controller
The Controller I2c interface (CSDA, CSCL) on the MT8293 is a slave interface capable of running
up to 400KHZ. This bus is used to configure the MT8293 by reading/writing to the appropriate
registers. The MT8293 is accessible on the local I
the CI2CA pin is latched on the rising edge of REST# providing a choice of two pairs of device
address.
Control of local I
2
c address with CI2CA pin
2
c bits at two-device address. The logic state of
TDA8946 Application
In L32 TV the TDA8946AJ is a dual-channel audio power amplifier with DC gain control. It has an
output power of 2 u10 W at an 8 :load and a 12 V supply.
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Block diagram
1. Input configuration
The TDA8946AJ inputs can be driven symmetrical (floating) as well as asymmetrical. In the
asymmetrical mode one input pin is connected via a capacitor to the signal source and the other
input is connected to the signal ground. The signal ground should be as close as possible to the
SVR (electrolytic) capacitor ground. Note that the DC level of the input pins is half of the supply
voltage VCC, so coupling capacitors for both pins are necessary
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2. Output power measurement
The output power as a function of the supply voltage is measured on the output pins at THD =
10%,in the L32 LCD TV Vcc=12V so we can see as shown in the following figure output about 7W
.
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3. Mode selection
In the L32 LCD TV TDA8946AJ has two functional modes, which can be selected by applying the
proper DC voltage to pin MODE.
1. Mute — In this mode the amplifier is DC-biased but not operational (no audio output).
This allows the input coupling capacitors to be charged to avoid pop-noise. The device is in mute
mode when 3.5 V < VMODE < (VCC 1.5 V).
2. Operating — In this mode the amplifier is operating normally. The operating mode is activated at
VMODE<1.0V.
MT5351 Application :
MediaTek MT5351 is a DTV Backend Decoder SOC which support flexible transport demux , HD
MPEG-2 video decoder , JPEG decoder , MPEG1,2,MP3,AC3 audio decoder , HDTV encoder . The
MT5351 enables consumer electronics manufactures to build high quality , feature-rich DTV , STB or
other home entertainment audio/video device.World-Leading Technology : HW support worldwide
major broadcast network and CA standards , include ATSC , DVB , OpenCable , DirectTV ,
MHP.Rich Feature for high value product : To enrich the feature of DTV , the MT5351 support
1394-5C component to external DVHS . Dual display , PIP/POP and quad pictures provide user a
whole new viewing experience.Credible Audio/Video Quality : The MT5351 use advanced
motion-adaptive de-interlace algorithm to achieve the best movie/video playback , The embedded
4X over-sample video DAC could generate very fine display quality . Also , the audio 3D surround
and equalizer provide professional entertainment.
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General Feature List :
1 . Host CPU:
1. ARM 926EJ
2.16K I-Cache and 16K D-Cache
3. 8K Data TCM and 8K instruction
4. JTAG ICE interface
5. Watch Dog timers
2 . Transport Demuxer :
1. Support 3 independent transport stream inputs
2. Support serial/parallel interface for each transport stream input
3. Support ATSC , DVB , and MPEG2 transport stream inputs.
4. Programmable sync detection.
5. Support DES/3-DES De-scramble.
6. 96 PID filter and 128 section filters.
7. Support TS recording via IEEE1394 interface.
3 . MPEG2 Decoder :
1. Support dual MPEG-2 HD decoder or up to 8 SD decoder.
2. Complaint to MP@ML
, MP@HL and MPEG-1 video standards.
4 . JPEG Decoder :
1. Decode Base-line or progressive JPEG file.
5 . 2D Graphics :
1. Support multiple color modes.
2. Point , horizontal/vertical line primitive drawing.
3. Rectangle fill and gradient fill functions.
4. Bitblt with transparent , alpha blending , alpha composition and stretch.
5. Font rendering by color expansion.
6. Support clip masks.
7. YCrCb to RGB color space transfer.
6 . OSD Display :
1. 3 linking list OSDs with multiple color mode.
2. OSD scaling with arbitary ratio from 1/2x to 2x.
9. 3D surround processing include virtual surround.
10. Audio and video lip synchronization.
11. Support reverberation.
12. SPDIF out.
13. I2S I/F.
15 . Peripherals :
1. Three UARTs with Tx and Rx FIFO , two of them have hardware flow control.
2. Two serial interfaces , one is master only the other can be set to master mode or slave mode.
3. Two PWMs.
4. IR blaster and receiver.
5. IEEE1394 link controller.
6. IDE bus : ATA/ATAPI7 UDMA mode 5 , 100MB/s.
7. Real-time clock and watchdog controller.
8. Memory card I/F : MS/MS-pro ,SD ,CF ,and MMC
9. PCMCIA/POD/CI interface
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16 . IC Outline :
1. 471 Pin BGA Package.
2. 3.3V/1.2V dual Voltage.
MX29LV320BTTC (Flash) Application :
The MX29LV320AT/B is a 32-mega bit Flash memory organized as 4M bytes of 8 bits and 2M words
of 16 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile
random access memory.
The MX29LV320AT/B is packaged in 48-pin TSOP and 48-ball CSP. It is designed to be
reprogrammed and erased in system or in standard EPROM programmers. The standard
MX29LV320AT/B offers access time as fast as 70ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention, the MX29LV320AT/B has
separate chip enable (CE) and output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and
programming. The MX29LV320AT/B uses a command register to manage this functionality. MXIC
Flash technology reliably stores memory contents even after 100,000 erase and program cycles.
The MXIC cell is designed to optimize the erase and program mechanisms. In addition, the
combination of advanced tunnel oxide processing and low internal electric fields for erase and
programming operations produces reliable cycling.
The MX29LV320AT/B uses a 2.7V to 3.6V VCC supply to perform the High Reliability Erase and
auto Program/Erase algorithms.
The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process.
Latch-up protection is proved for stresses up to 100 milliamperes on address and data pin from -1V
to VCC + 1V.
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BLOCK DIAGRAM
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BUS OPERATION--1
Legend:
L=Logic LOW=VIL, H=Logic High=VIH, VID=12.00.5V, VΓHH=11.5-12.5V, X=Don't Care,
AIN=Address IN, DIN=Data IN,DOUT=Data OUT
Notes:
1. When the WP/ACC pin is at VHH, the device enters the accelerated program mode. See
"Accelerated Program Operations" for more information.
2.The sector group protect and chip unprotect functions may also be implemented via programming
equipment. See the "Sector Group Protection and Chip Unprotection" section.
3.If WP/ACC=VIL, the two outermost boot sectors remain protected. If WP/ACC=VIH, the two
outermost boot sector protection depends on whether they were last protected or unprotected
using the method described in "Sector/Sector Block Protection and Unprotection". If
WP/ACC=VHH, all sectors will be unprotected.
4.DIN or Dout as required by command sequence, data polling, or sector protection algorithm.
5.Address are A20:A0 in word mode (BYTE=VIH), A20:A-1 in byte mode (BYTE=VIL).
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BUS OPERATION--2
Notes:
1.Code=00h means unprotected, or code=01h protected.
2.Code=99 means factory locked, or code=19h not factory locked.
WRITE COMMANDS/COMMAND SEQUENCES
To program data to the device or erase sectors of memory , the system must drive WE and CE to
VIL, and OE to VIH.An erase operation can erase one sector, multiple sectors , or the entire device.
A "sector address" consists of the address bits required to uniquely select a sector. Writing specific
address and data commands or sequences into the command register initiates device operations.
Table A defines the valid register command sequences. Writing incorrect address and data values or
writing them in the improper sequence resets the device to reading array data. Section has details
on erasing a sector or the entire chip, or suspending/resuming the erase operation.
After the system writes the Automatic Select command sequence, the device enters the Automatic
Select mode. The system can then read Automatic Select codes from the internal register (which is
separate from the memory array) on Q7-Q0. Standard read cycle timings apply in this mode. Refer
to the Automatic Select Mode and Automatic Select Command Sequence section for more
information.ICC2 in the DC Characteristics table represents the active current specification for the
write mode. The "AC Characteristics" section contains timing specification table and timing diagrams
for write operations.
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TABLE A. MX29LV320AT/B COMMAND DEFINITIONS
Legend:
X=Don't care
RA=Address of the memory location to be read.
RD=Data read from location RA during read operation.
PA=Address of the memory location to be programmed.
Addresses are latched on the falling edge of the WE or CE pulse.
PD=Data to be programmed at location PA. Data is latched on the rising edge of WE or CE pulse.
SA=Address of the sector to be erased or verified. Address bits A20-A12 uniquely select any sector.
ID=22A7h(Top), 22A8h(Bottom)
Notes:
1.All values are in hexadecimal.
2.Except when reading array or Automatic Select data, all bus cycles are write operation.
3.The Reset command is required to return to the read mode when the device is in the Automatic
Select mode or if Q5 goes high.
4.The fourth cycle of the Automatic Select command sequence is a read cycle.
5.The data is 99h for factory locked and 19h for not factory locked.
6.The data is 00h for an unprotected sector/sector block and 01h for a protected sector/sector block.
In the third cycle of the command sequence, address bit A20=0 to verify sectors 0~31, A20=1 to
verify sectors 32~70 for Top Boot device.
7.Command is valid when device is ready to read array data or when device is in Automatic Select
mode.
8.The system may read and program functions in non-erasing sectors, or enter the Automatic Select
mode, when in the erase Suspend mode. The Erase Suspend command is valid only during a
sector erase operation.
9.The Erase Resume command is valid only during the Erase Suspend mode.
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STANDBY MODE
MX29LV320AT/B can be set into Standby mode with two different approaches. One is using both CE
and RESET pins and the other one is using RESET pin only.
When using both pins of CE and RESET, a CMOS Standby mode is achieved with both pins held at
Vcc ±0.3V. Under this condition, the current consumed is less than 0.2uA (typ.). If both of the CE and
RESET are held at VIH, but not within the range of VCC ± 0.3V, the device will still be in the standby
mode, but the standby current will be larger. During Auto Algorithm operation, Vcc active current
(ICC2) is required even CE = "H" until the operation is completed. The device can be read with
standard access time (tCE) from either of these standby modes.
When using only RESET, a CMOS standby mode is achieved with RESET input held at Vss r0.3V,
Under this condition the current is consumed less than 1uA (typ.). Once the RESET pin is taken high,
the device is back to active without recovery delay.In the standby mode the outputs are in the high
impedance state, independent of the OE input.MX29LV320AT/B is capable to provide the Automatic
Standby Mode to restrain power consumption during readout of data. This mode can be used
effectively with an application requested low power consumption such as handy terminals.
To active this mode, MX29LV320AT/B automatically switch themselves to low power mode when
MX29LV320AT/B addresses remain stable during access time of tACC+30ns. It is not necessary to
control CE, WE, and OE on the mode. Under the mode, the current consumed is typically 0.2uA
(CMOS level).
RESET OPERATION
01The RESET pin provides a hardware method of resetting the device to reading array data. When
the RESET pin is driven low for at least a period of tRP, the device immediately terminates any
operation in progress, tristates all output pins, and ignores all read/write commands for the duration
of the RESET pulse. The device also resets the internal state machine to reading array data. The
operation that was interrupted should be reinitiated once the device is ready to accept another
command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET pulse. When RESET is held at VSS0.3V, the Γ
device draws CMOS standby current (ICC4). If RESET is held at VIL but not within VSS0.3V, the Γ
standby current will be greater.The RESET pin may be tied to system reset circuitry. A system reset
would that also reset the Flash memory, enabling the system to read the boot-up firm-ware from the
Flash memory.
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If RESET is asserted during a program or erase operation, the RY/BY pin remains a "0" (busy) until
the internal reset operation is complete, which requires a time of tREADY (during Embedded
Algorithms). The system can thus monitor RY/BY to determine whether the reset operation is
complete. If RESET is asserted when a program or erase operation is not executing (RY/BY pin is
"1"), the reset operation is completed within a time of tREADY (not during Embedded Algorithms).
The system can read data tRH after the RESET pin returns to VIH. Refer to the AC Characteristics
tables for RESET parameters and to Figure 14 for the timing diagram.
WRITE PROTECT (WP)
The write protect function provides a hardware method to protect boot sectors without using VID.
If the system asserts VIL on the WP/ACC pin, the device disables program and erase functions in
the two "outermost" 8 Kbyte boot sectors independently of whether those sectors were protected or
unprotected using the method described in Sector/Sector Group Protection and Chip Unprotection".
The two outermost 8 Kbyte boot sectors are the two sectors containing the lowest addresses in a
bottom-boot-configured device, or the two sectors containing the highest addresses in a
top-boot-configured device.
If the system asserts VIH on the WP/ACC pin, the device reverts to whether the two outermost 8K
Byte boot sectors were last set to be protected or unprotected. That is, sector protection or
unprotection for these two sectors depends on whether they were last protected or unprotected
using the method described in "Sector/Sector Group Protection and Chip Unprotection".
Note that the WP/ACC pin must not be left floating or unconnected; inconsistent behavior of the
device may result.
SOFTWARE COMMAND DEFINITIONS :
Device operations are selected by writing specific address and data sequences into the command
register. Writing incorrect address and data values or writing them in the improper sequence will
reset the device to the read mode. Table 3 defines the valid register command sequences. Note that
the Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Sector
Erase operation is in progress. Either of the two reset command sequences will reset the device
(whenapplicable).
All addresses are latched on the falling edge of WE or CE, whichever happens later. All data are
latched on rising edge of WE or CE, whichever happens first.
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WRITE OPERATION STATUS
The device provides several bits to determine the status of a write operation: Q2, Q3, Q5, Q6, Q7,
and RY/BY.Table B and the following subsections describe the functions of these bits. Q7, RY/BY,
and Q6 each offer a method for determining whether a program or erase operation is complete or in
progress. These three bits are discussed first.
Table B. Write Operation Status
Notes:
1.Performing successive read operations from the erase-suspended sector will cause Q2 to toggle.
2.Performing successive read operations from any address will cause Q6 to toggle.
3.Reading the byte/word address being programmed while in the erase-suspend program mode will
indicate logic "1" at the Q2 bit.
However, successive reads from the erase-suspended sector will cause Q2 to toggle.
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Fig C. COMMAND WRITE OPERATION
Fig D. READ TIMING WAVEFORMS
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Fig E. RESET TIMING WAVEFORM
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DDR SDRAM (NT5DS16M16CS-5T) Application:
Functional Description
The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,
435, 456 bits. The 256Mb DDR SDRAM is internally configured as a quad-bank DRAM. The 256Mb
DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation. The
double-data-rate architecture is essentially a 2n prefetch architecture, with an interface designed to
transfer two data words per clock cycle at the I/O pins. A single read or write access for the 256Mb
DDR SDRAM consists of a single 2n-bit wide, one clock cycle data transfer at the internal DRAM
core and two corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins. Read and
write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and
continue for a programmed number of locations in a programmed sequence. Accesses begin with
the registration of an Active command, which is then followed by a Read or Write command. The
address bits registered coincident with the Active command are used to select the bank and row to
be accessed (BA0, BA1 select the bank; A0-A12 select the row). The address bits registered
coincident with the Read or Write command are used to select the starting column location for the
burst access.Prior to normal operation, the DDR SDRAM must be initialized. The following sections
provide detailed information covering device initialization, register definition, command descriptions
and device operation.
Block Diagram (16Mb x 16)
Note: This Functional Block Diagram is intended to facilitate user understanding of the operation of
the device; it does not represent an actual circuit implementation.
Note: DM is a unidirectional signal (input only), but is internally loaded to match the load of the
The normal operating mode is selected by issuing a Mode Register Set Command with bits A7-A12
to zero, and bits A0-A6 set to the desired values. A DLL reset is initiated by issuing a Mode Register
Set command with bits A7 and A9-A12 each set to zero, bit A8 set to one, and bits A0-A6 set to the
desired values. A Mode Register Set command issued to reset the DLL should always be followed
by a Mode Register Set command to select normal operating mode.
All other combinations of values for A7-A12 are reserved for future use and/or test modes. Test
modes and reserved states should not be used as unknown operation or incompatibility with future
versions may result.
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Extended Mode Register
The Extended Mode Register controls functions beyond those controlled by the Mode Register;
these additional functions include DLL enable/disable, bit A0; output drive strength selection, bit A1;
and QFC output enable/disable, bit A2 (NTC optional). These functions are controlled via the bit
settings shown in the Extended Mode Register Definition. The Extended Mode Register is
programmed via the Mode Register Set command (with BA0 = 1 and BA1 = 0) and retains the stored
information until it is programmed again or the device loses power. The Extended Mode Register
must be loaded when all banks are idle, and the controller must wait the specified time before
initiating any subsequent operation. Violating either of these requirements result in unspecified
operation.
Extended Mode Register Definition
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Truth Table a: Commands
1. CKE is high for all commands shown except Self Refresh.
2. BA0, BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode
Register; BA0 = 1, BA1 = 0 selects ,Extended Mode Register; other combinations of BA0-BA1 are
reserved; A0-A12 provide the op-code to be written to the selected Mode Register.)
3. BA0-BA1 provide bank address and A0-A12 provide row address.
4. BA0, BA1 provide bank address; A0-Ai provide column address (where i = 9 for x8 and 9, 11 for
x4); A10 high enables the Auto Precharge feature (non-persistent), A10 low disables the Auto
Precharge feature.
5. A10 LOW: BA0, BA1 determine which bank is precharged.A10 HIGH: all banks are precharged
and BA0, BA1 are “Don’t Care.”
6. This command is auto refresh if CKE is high; Self Refresh if CKE is low.
7. Internal refresh counter controls row and bank addressing; all inputs and I/Os are “Don’t Care”
except for CKE.
8. Applies only to read bursts with Auto Precharge disabled; this command is undefined (and should
not be used) for read bursts with Auto Precharge enabled or for write bursts
9. Deselect and NOP are functionally interchangeable.
Active
The Active command is used to open (or activate) a row in a particular bank for a subsequent access.
The value on the BA0,BA1 inputs selects the bank, and the address provided on inputs A0-A12
selects the row. This row remains active (or open) for accesses until a Precharge (or Read or Write
with Auto Precharge) is issued to that bank. A Precharge (or Read or Write with Auto Precharge)
command must be issued and completed before opening a different row in the same ba
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Read
The Read command is used to initiate a burst read access to an active (open) row. The value on the
BA0, BA1 inputs selects the bank, and the address provided on inputs A0-Ai, Aj (where [i = 9, j =
don’t care] for x8; where [i = 9, j = 11] for x4) selects the starting column location. The value on input
A10 determines whether or not Auto Precharge is used. If Auto Precharge is selected, the row being
accessed is precharged at the end of the Read burst; if Auto Precharge is not selected, the row
remains open for subsequent accesses.
Write
The Write command is used to initiate a burst write access to an active (open) row. The value on the
BA0, BA1 inputs selects the bank, and the address provided on inputs A0-Ai, Aj (where [i = 9, j =
don’t care] for x8; where [i = 9, j = 11] for x4) selects the starting column location. The value on input
A10 determines whether or not Auto Precharge is used. If Auto Precharge is selected, the row being
accessed is precharged at the end of the
remains open for subsequent accesses. Input data appearing on the DQs is written to the memory
array subject to the DM input logic level appearing coincident with the data. If a given DM signal is
registered low, the corresponding data is written to memory; if the DM signal is registered high, the
corresponding data inputs are ignored, and a Write is not executed to that byte/column location.
Write burst; if Auto Precharge is not selected, the row
Auto Refresh
Auto Refresh is used during normal operation of the DDR SDRAM and is analogous to CAS Before
RAS (CBR) Refresh in previous DRAM types. This command is nonpersistent, so it must be issued
each time a refresh is required.The refresh addressing is generated by the internal refresh controller.
This makes the address bits “Don’t Care” during an Auto Refresh command. The 256Mb DDR
SDRAM requires Auto Refresh cycles at an average periodic interval of 7.8Ӵs (maximum).
Self Refresh
The Self Refresh command can be used to retain data in the DDR SDRAM, even if the rest of the
system is powered down.When in the self refresh mode, the DDR SDRAM retains data without
external clocking. The Self Refresh command is initiated as an Auto Refresh command coincident
with CKE transitioning low. The DLL is automatically disabled upon entering Self Refresh, and is
automatically enabled upon exiting Self Refresh (200 clock cycles must then occur before a Read
command can be issued). Input signals except CKE (low) are “Don’t Care” during Self Refresh
operation.
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The procedure for exiting self refresh requires a sequence of commands. CK (and CK) must be
stable prior to CKE returning high. Once CKE is high, the SDRAM must have NOP commands
issued for tXSNR because time is required for the completion of any internal refresh in progress. A
simple algorithm for meeting both refresh and DLL requirements is to apply NOPs for 200 clock
cycles before applying any other command.
Operations:
Reads
Subsequent to programming the mode register with CAS latency, burst type, and burst length, Read
bursts are initiated with a Read command.
The starting column and bank addresses are provided with the Read command and Auto Precharge
is either enabled or disabled for that burst access. If Auto Precharge is enabled, the row that is
accessed starts precharge at the completion of the burst, provided tRAS has been satisfied. For the
generic Read commands used in the following illustrations, Auto Precharge is disabled.
During Read bursts, the valid data-out element from the starting column address is available
following the CAS latency after the Read command. Each subsequent data-out element is valid
nominally at the next positive or negative clock edge (i.e. at the next crossing of CK and CK). The
following timing figure entitled “Read Burst: CAS Latencies (Burst Length=4)” illustrates the general
timing for each supported CAS latency setting. DQS is driven by the DDR SDRAM along with output
data. The initial low state on DQS is known as the read preamble; the low state coincident with the
last data-out element is known as the read postamble . Upon completion of a burst, assuming no
other commands have been initiated, the DQs and DQS goes High-Z. Data from any Read burst
may be concatenated with or truncated with data from a subsequent Read command. In either case,
a continuous flow of data can be maintained. The first data element from the new burst follows either
the last element of a completed burst or the last desired data element of a longer burst which is
being truncated. The new Read command should be issued x cycles after the first Read command,
where x equals the number of desired data element pairs (pairs are required by the 2n prefetch
architecture). This is shown in timing figure entitled “Consecutive Read Bursts: CAS Latencies (Burst
Length =4 or 8)”.A Read command can be initiated on any positive clock cycle following a previous
Read command. Nonconsecutive Read data is shown in timing figure entitled “Non-Consecutive
Read Bursts: CAS Latencies (Burst Length = 4)”. Full-speed Random Read Accesses: CAS
Latencies (Burst Length = 2, 4 or 8) within a page (or pages) can be performed as shown on
following:
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Random Read Accesses: CAS Latencies (Burst Length = 2, 4 or 8)
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Read Command
Writes
Write bursts are initiated with a Write command, as shown in timing figure Write Command on
following: The starting column and bank addresses are provided with the Write command, and Auto
Precharge is either enabled or disabled for that access. If Auto Precharge is enabled, the row being
accessed is precharged at the completion of the burst. For the generic Write commands used in the
following illustrations, Auto Precharge is disabled.
During Write bursts, the first valid data-in element is registered on the first rising edge of DQS
following the write command, and subsequent data elements are registered on successive edges of
DQS. The Low state on DQS between the Write command and the first rising edge is known as the
write preamble; the Low state on DQS following the last data-in element is known as the write
postamble.
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The time between the Write command and the first corresponding rising edge of DQS (tDQSS) is
specified with a relatively wide range (from 75% to 125% of one clock cycle), so most of the Write
diagrams that follow are drawn for the two extreme cases (i.e. tDQSS(min) and tDQSS(max)).
Timing figure Write Burst (Burst Length = 4) on page 33 shows the two extremes of tDQSS for a
burst of four. Upon completion of a burst, assuming no other commands have been initiated, the
DQs and DQS enters High-Z and any additional input data is ignored.Data for any Write burst may
be concatenated with or truncated with a subsequent Write command. In either case, a continuous
flow of input data can be maintained. The new Write command can be issued on any positive edge
of clock following the previous Write command. The first data element from the new burst is applied
after either the last element of a completed burst or the last desired data element of a longer burst
which is being truncated. The new Write command should be issued x cycles after the first Write
command, where x equals the number of desired data element pairs (pairs are required by the 2n