Page 4 G52245-0, Rev 4.1
9/26/00
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800)-VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
DC Characteristics (All characteristics are over the specified operating conditions)
Table 1: Power
NOTE: Specified with outputs terminated with 50Ω to +2.0V.
Table 2: Program Input Levels (TTL)
Table 3: Data Input Levels (Differential PECL)
Table 4: Data Output Levels (Differential PECL)
NOTE: (1) V
CC
= V
CCP
= 3.3V, V
EE
= 0V.
Parameter Description Min Typ Max Units Conditions
I
CC
VCC supply current — — 5400 mA
I
CCP
V
CCP
supply current — — 2600 mA
I
TERM
V
TERM
supply current — — ±512 mA VIN = 2.4V
P
T
Total chip power (I
TERM
= 0) — — -500 µA VIN = 0.5V
Parameter Description Min Typ Max Units Conditions
V
IH
Input HIGH voltage 2.0 — 3.5 V —
V
IL
Input LOW voltage 0 — 0.8 V —
I
IH
Input HIGH current — — 500 µA VIN = 2.4V
I
IL
Input LOW current — — -500 µA VIN = 0.5V
V
OH
Output HIGH voltage 2.4 --- --- V IOH = -2mA
V
OL
Output LOW voltage --- --- 0.4 V IOL = 2mA
Parameter Description Min Typ Max Units Conditions
V
ID
Input differential voltage 400 — 1000 mV single-ended measurement
V
ICM
Input common-mode voltage 1.8 — 2.3 V V
TERM
= V
CC
-1.3V
Parameter Description Min Typ Max Units Conditions
V
OD
Output differential voltage 600 — 1000 mV See Note 1
V
OCM
Output common-mode voltage 1.8 — 2.3 V See Note 1