VITESSE VSC837UG Datasheet

VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC837
68x68 Crosspoint Switch
Features
68 Input by 68 Output Crosspoint Switch
3.2Gb/s NRZ Data Bandwidth
66MHz Multi-Mode Programming Port
TTL/2.5V CMOS Control I/O (3.3V tolerant)
Programmable On-Chip I/O Termination
Input Signal Activity (ISA) Monitoring Function
Integrated Signal Equalization (ISE) for
Deterministic Jitter Reduction
Single 2.5V Supply
Differential CML Output Driver
11W typ/14W max (low drive mode)
13W typ/16 W max (high drive mode)
Hard and Soft Power-Down for Unused Channels
High Performance 37.5mm, 480 TBGA Package
General Description
The VSC837 is a monolithic 68x68 asynchronous crosspoint switc h, designed to carry broadband data streams. The non-blocking switch core is programmed through a triple-mode port interface that allows random access programming of each input/output port. A high degree of signal integr ity is maintained thr oughout the chip via fully differential signal paths.
The crosspoint function is based on a multiplexer array architecture. Each data output is driven by a 68:1 multiplexer th at can be prog rammed to one and onl y o ne of its 68 inp uts. The s ignal path is u nregis tered and fully asynchronous, so there are no restrictions on the phase, frequency, or signal pattern at each input.
Each high-speed output is a fully differential switched current driver with switchable on-die terminations for maximum signal integrity. Data inputs are terminated on die through 100 plement inputs (see Input Termination section for further detail).
A triple-mode programming interface is provided that allows programming commands to be sent as serial data or one of two forms of para llel da ta. The input -ref erred mode (b urst mode) allows an input por t to be rout ed to all outputs in only 4 program cycles. Core program ming can be random for each port addre ss, or multiple program assignments can be queued and issued simultaneously. The programming may be initialized to a “straight-through” configuration (A0 to Y0, A1 to Y1, etc.) using the INITB pin.
An activity monitor is provided to allow in-system diagnostics. The activity monitor can observe any high­speed input via an internal 69th multiplexe r.
Unused channels may be powered down to allow efficient use of the switch in appl ications that requi re only a subset of the channels. Power-down can be accomplished in har dware, via ded icated power pins for pairs of input and output channels, or in software by programming individual unused outputs with a disable code.
resistors between true and com-
3.2Gb/s
VSC837 Block Diagram
2 2
A0
2
A67
µ
P
control
G52309-0, Rev 3.0 Page 1 02/16/01
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Internet: www.vitesse.com
Y0
2
Y67
VITESSE
SEMICONDUCTOR CORPORATION
3.2Gb/s 68x68 Crosspoint Switch
Functional Block Diagram
A, AN[0:67]
CONFIG
INITB
68x69 Switch Core
Core Program Registers
Program Memory
Program Interface
Preliminary Data Sheet
VSC837
Y , YN[0:67]
th
Internal 69
Output
Activity
Monitor
CSB
LOAD
BURST
SDOUT
OUTCHAN[18:0]
INCHAN[6:0]
SERIAL
ALE_SCN
ACTCLK
ACTIVITY
Functional Description
Input / Output Characteristics
All input data must be differential and should be nominally biased to +2.0V or AC-coupled. Other levels are allowed as described under the Input Termination section. On-chip terminations are provided, with a nomi- nal impedance of 100 coupling.
For direct interconnection of multiple VSC837 devices, a CML termination mode is provided by tying the ITC pin to V
CC
loads for an open-drain or open-collector differential output.
Data outputs are provided through differential current switches with on-chip back-termination. The output circuit is capable of dri ving ex ternal 5 0 electronically switchable to enable a power savings of 2W (max) by reducing the output driver current.
differential. All input termination resistors float with an internal bias provided for AC-
, which ties the center point of the 100te rminatio n to VCC, causing the terminat ions to act as
far-end termination (recommended). The output back -terminatio ns are
Page 2 G52309-0, Rev 3.0
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
Tel: (800) VITESSE FAX: (805) 987-5896 Email: prodinfo@vitesse.com
Internet: www.vitesse.com
02/16/01
VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC837
68x68 Crosspoint Switch
Programming Interface
Parallel Mode
In parallel mode (SERIAL=0, BURST=0), the binary word on INCHAN[6:0] is t he numerical identifie r of the input that will be routed to the specified output. OUTCHAN[6:0] is the numerical identifier of the output being programmed. A rising edge on the LOAD signal will transfer the programming data to the shadow regis­ter in the program me mor y. Raising CONFIG (asynchr onou sly) wi ll t ransf er th e pr og ramm ing data to th e ma in latches in the program mem ory and cau se the int ernal select signa ls in the core to re-confi gure th e multip lexer. Lowering CONFIG will latch the main latches. CONFIG may be tied HIGH to enable programming take effect instantaneously.
This interface may be used with multiplexed address/data buses by using only INCHAN[6:0] without OUTCHAN[6:0] and dropping ALE when the address of the output to be programmed is present on INCHAN[6:0]. After the address is latched, the input address may be presented on INCHAN [6:0] and pro­gramming proceeds as above.
No read-back capability is provided in parallel mode. Read-back for diagnostic purposes is provided in serial mode via the scan function.
Serial Mode
In serial mode (SERIAL=1, BURST=0), the INCHAN0 pin becomes the serial data input and the INCHAN1 pin becomes the serial clock (rising edge triggered). A serial word of the form [Output][Input] is shifted into the internal shift register, and the LOAD pin is asserted (HIGH) coincident with the last bit of the data word to signal that the word is to be applied. This transfers the input ident ifier to the shado w register of t he addressed output. CONFIG is then applied (asynchronously) to transfer one or more program commands to the main latches of the program memories.
The SDOUT pin follows the data on the INCHAN0_SDIN pin 14 clock cycles later. This enables the user to chain the serial ports of several crosspoints, shift program data for all switches through such a chain, and assert LOAD on all switches simultaneously to program all of the connections simultaneously.
The output field is 7 bits long, representing the binary numerical identifier of the output to be programmed. The input field is 7 bits long, representing the numerical identifier of the input that will be routed to the speci­fied output.
3.2Gb/s
Serial Read-Back
Read-back of the program memor y contents is acco mplished in serial m ode by s etting the ALE_SCN pin HIGH. This will serially shift out the contents of the main latches in the program memories, slice 68 first and slice 0 last, and MSB-first, LSB-last for each 7-bit word. One rising edge of INCHAN1_SCLK with ALE_SCN=0 and SERIAL=1 must occur to load the entire 483-bit shift register prior to shifting out data. At a clock rate of 66MHz, this operation takes 7.26
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µs.
Internet: www.vitesse.com
VITESSE
SEMICONDUCTOR CORPORATION
3.2Gb/s 68x68 Crosspoint Switch
Burst Mode
Burst mode programming (BURS T=1, SE RIAL=0) e nabl es an input to be broadcast to any group of 1 t o 17 outputs with a single command. In this mode, rising edges on the LOAD pin will trigger program operations. The INCHAN[6:0] pins represent the input to be broadcast. The OUTCHAN[18:17] pins represent the page (quarter) of the program memory to access, and each of the OUTCHA N[16:0] pins represent s 1 of the 17 out­puts within that page. A ’1’ on any of those pins will cause that output to be programmed to connect to the input named on INCHAN[6:0].
No read-back capability is provided in burst mode. See Serial Read-Back section above.
Activity Monitoring
The activity monito r observes the output of the internal 69 th output fro m the core. By p rogrammin g the 69th output to observe various inputs, the input signals can be scanned for activity or lack thereof. Each rising edge of ACTCLK causes the monitor to read out the act ivity state from t he previous ACT CLK period and cl ears the internal activity state until a data transition triggers it again. There must be a min imum of o ne ri si ng a nd o ne falling edge on the observed input data pin during the ACTCLK period for activity to be detected. After power­on the output of ACTIVITY after the first ACTCLK rising edge is unknown.
Selective Power-Down
Unused input and output channels can be made to consume little or no power via one of two methods of selective power-down.
Preliminary Data Sheet
VSC837
Software Power-Down
Using this feature, unused outputs may be disabled, saving approximately 170 mW per channel for maxi­mum dissipation conditions. This is accomplished by programming each unused output to look at input 127 (7F Hex), which represents a non-existent input channel. The channel may be subsequently activated by program­ming a valid input address. It is recommended, however, that any changes in power programming only be exe­cuted as part of an initialization sequence to guard against the effects of any switching transients that might result from changing the power supply current sudden ly. Software mode does not affect the functioning or power of unused input channels.
Hardware Power-Down
Using this feature, the power associated with given pairs of inp uts may be shut of f by ty ing the correspond­ing V tion conditions. The power associated with give n pairs of outputs, including their c ontribution to the core power, can be shut off by tying the corresponding V output pair is saved under the maximum dissipation conditions.
ing inputs and outputs will always be on and consuming power. See Figure 6 and Table 10 for the location of these pins.
pin to VCC (see Table 10). Approximately 160 mW per input pair is saved under t he max imum di ssipa-
EE
pin to VCC (see Table 10). Approximately 360 mW per
EE
Certain V
pins must always be active. In oth er words, t ied to t he most ne gative supp ly, so the correspond-
EE
Page 4 G52309-0, Rev 3.0
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
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Internet: www.vitesse.com
02/16/01
VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC837
68x68 Crosspoint Switch
AC Characteristics
Table 1: Data Path
Symbol Parameter Min Typ Max Units
f
RATE
t
SKW
t
PDAY
, t
t
R
, t
t
R
t
JR
t
JP
NOTES:(1) Tested on a sample basis only. (2) Br oadband (unfiltered) deterministic jitter added to a jitter-free input, 223-1 PRBS data pattern.
T a ble 2: Program Interface Timing
Symbol Parameter Min Typ Max Units
t
sWRB
t
hWRB
t
pwLW
t
sCSB
t
hCSB
t
pwCFG
t
sSDIN
t
hSDIN
t
perSCLK
t
sLOAD
t
hLOAD
t
sSERIAL
t
hSERIAL
t
sBURST
t
hBURST
t
dsDOUT
t
pwINITB
t
sSCAN
t
hSCAN
Maximum Data Rate ——3.2 Gb/s Channel-to-channel delay skew 300 ps Propagation Delay from an A input to a Y output 750 ps High-speed input rise/fall times, 20% to 80% ——150 ps
F
High-speed outpu t rise/fall times, 20% to 80% ——150 ps
F
Output added delay jitter, rms Output added delay jitter, peak-to-peak
Setup time from INCHAN[6:0] or OUTCHAN[6:0] to rising edge of WRB 3.35 ——ns Hold time from rising edge of WRB to INCHAN[6:0] or OUTCHAN[6:0] 1.45 ——ns Pulse width (HIGH or LOW) on LOAD 6.75 ——ns Setup time from CSB to falling edge of LOAD or ALE_SCN in parallel or burst
mode, or rising edge of LOAD in serial mode. Hold time of CSB rising edge after LOAD or ALE_SCN rising in parallel or
burst mode, or falling edge of LOAD in serial mode, or falling edge of CONFIG in any mode.
Pulse width (HIGH or LOW) on CONFIG 6.75 ——ns Setup time from INCHAN0_SDIN to INCHAN1_SCLK rising 1.65 ——ns Hold time of INCHAN0_SDIN after INCHAN1_SCLK rising 1.0 —— ns Minimum period of S CLK in serial mode 15 —— ns Setup time from LOAD to INCHAN1_SCLK rising 1.85 ——ns Hold time of LOAD after INCHAN1_SCLK rising 0.95 ——ns Setup time from SERIAL rising to INCHAN1_SCLK rising when entering serial
mode or SERIAL falling to LOAD falling when entering parallel mode or SERIAL falling to LOAD rising when entering burst mode.
Hold time from INCHAN1_SCLK rising to SERIAL falling when exiting serial
mode.
Setup time from BURST rising to LOAD rising when entering burst mode or BURST falling to LOAD falling when entering parallel mode.
Hold time from LOAD rising to BURST falling when exiting burst mode. 2.45 —— ns Delay from INCHAN1_SCLK rising to SDOUT, 20pF load. ——6.20 ns Pulse width (HIGH or LOW) on INITB 6.75 ——ns Setup time from ALE_SCN to INCHAN1_SCLK rising when starting or
completing a serial read-back sequence. Hold time of ALE_SCN after INCHAN1_SCLK rising when starting or
completing a serial read-back sequence.
(1, 2)
(1, 2)
——10 ps ——40 ps
0 —— ns
0 —— ns
0.90 —— ns
0 —— ns
1.85 —— ns
1.65 —— ns
1.0 —— ns
3.2Gb/s
G52309-0, Rev 3.0 Page 5 02/16/01
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
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Internet: www.vitesse.com
VITESSE
SEMICONDUCTOR CORPORATION
3.2Gb/s 68x68 Crosspoint Switch
Figure 1: Parallel Mode—Separate Address/Data (leave ALE_SCN pin HIGH)
OUTCHAN[6:0]
INCHAN[6:0]
LOAD
t
sCSB
CSB
CONFIG
t
sSERIAL
SERIAL
INCHAN[6:0]
ALE_SCN
LOAD
CSB
CONFIG
Preliminary Data Sheet
Output Address
Input Address
t
sWRB
t
pwLW
Figure 2: Parallel Mode—Multiplexed Address/Data
Output Address Input Address
t
sCSB
t
hWRB
t
sWRB
t
pwLW
t
hWRB
t
pwCFG
t
pwCFG
VSC837
t
hCSB
t
hCSB
t
SERIAL
sSERIAL
Figure 3: Burst Mode
OUTCHAN[18:17]
OUTCHAN[16:0]
INCHAN[6:0]
LOAD
CSB
CONFIG
BURST
Page 6 G52309-0, Rev 3.0
Output Page Output Page
Output ID Bits Output ID Bits
Input Address Input Address
t
sWRB
t
sCSBtpwLW
t
sBURST
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
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t
hWRB
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t
hBURST
t
pwCFG
t
hCSB
02/16/01
VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC837
Figure 4: Serial Mode (leave ALE_SCN pin LOW during programming)
INCHAN0_SDIN
INCHAN1_SCLK
SDOUT
LOAD
CSB
CONFIG
SERIAL
O6 O5 O4 O3 O2 O1 O0 I6 I5 I4 I3
t
sSDIN
t
sSERIAL
O(n) = Output Address Bit (n), I(n) = Input Address Bit (n)
t
hSDIN
t
perSCLK
t
sCSB
I2 I1 I0
t
sLOAD
3.2Gb/s
68x68 Crosspoint Switch
t
dsDOUT
O6 O5 O4 O3
t
hLOAD
t
hCSB
t
pwCFG
ALE_SCN
INCHAN1_SCLK
SDOUT
SERIAL
t
sSERIAL
t
hSCAN
Figure 5: Serial Read-Back
t
sSCAN
t
dsDOUT
68 68 68 68 68 68 68 67 67 67 67 67 67 67
B6 B5 B4 B3 B2 B1 B0 B6 B5 B4 B3 B2 B1 B0
MSB of program memory for output 68 Read-back shift register (483 bits long) is loaded here
on rising edge of INCHAN1_SCLK with SERIAL HIGH and ALE_SCN LOW
t
perSCLK
66
B6
G52309-0, Rev 3.0 Page 7 02/16/01
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
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Internet: www.vitesse.com
VITESSE
SEMICONDUCTOR CORPORATION
3.2Gb/s
Preliminary Data Sheet
68x68 Crosspoint Switch
DC Characteristics
All characteristics are over the specified operating conditions.
Table 3: Power Supply Requirements
Symbol Parameter Min Typ Max Units Conditions
I
CC
P
T
Table 4: Control Port Input Levels (TTL/CMOS)
Symbol Parameter Min Typ Max Units Conditions
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
V
OHPU
V
OLPU
VCC supply current 5600 6095 mA Total chip power (with I
terminations ON, high drive)
Input HIGH voltage 1.7 Input LOW voltage 0 0.8 V
Input HIGH current TBD µA Input LOW current TBD µA
Output HIGH voltage Output LOW voltage 0 0.2 V DC load < 2mA
VOH with external pull-up 2.4 V 250 to 3.3V(5%) VOL with external pull-up 0.4 V 250 to 3.3V(5%)
TERM
= 0 and back-
VCC-
0.2
13 16 W
VCC+
1.0
V
CC
V
V DC load < 500µA
VSC837
Table 5: Signal Input Levels (high-speed signal path)
Symbol Parameter Min Typ Max Units Conditions
V
IN
V
ICM
Table 6: Signal Output Levels (high-speed signal path)
Input voltage amplitude 150 1100 mV See Note 1
V
Input common-mode voltage
CC
0.7
-
V
-
CC
0.2
VSee Note 2
TERM_CTRL=ON, DRIVE_CTRL=HI
Symbol Parameter Min Typ Max Units Conditions
V
OUT
V
OCM
NOTES: (1) Mean peak-to-peak amplitude measurement of either true or complement of the differential signal. (2) VCC = V
Page 8 G52309-0, Rev 3.0
Output differe nti al vo lta g e 400 600 mV See Note 1, 3 Output common-mode voltage
(3) Terminated in 50
to V
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
VCC-
0.3
. This termination is used for testing the part, but other termin ations are allowed—see Table 9.
CC
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VCC-
0.2
V See Note 2, 3
= 2.5V, VEE = 0V.
CCP
02/16/01
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