VITESSE VSC7969YD2, VSC7969WD2B, VSC7969YD1, VSC7969WD2A, VSC7969WD1B Datasheet

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7969

3.125Gb/s Integrat ed Transim p eda nce

and Limiting Amplifier with Signal Detect

Features Applications

• Integrated TIA and Limiting Amplifier

• Low Power Consumption for SFF Applications

• TO Package-Compatible Layout

• On-Chip Signal Detect

• On-Chip Linear Photocurrent Monitor

• Single 3.3V Supply

• 5V Supply Operation via Wirebond Option

• Compatible with PIN or Avalanche Detectors

• Packages: 16-Pin TSSOP, TO-46, Bare Die

• 2.488Gb/s, 3.125Gb/s SONET OC-48/

SDH STM-16

• 2.125Gb/s Fibre Channel

• 2.5Gb/s or 3.125Gb/s Ethernet Applications with

8B/10B Overhead

• SFF Transceivers

General Description

The VSC7969 is a 3.125Gb/s transimpedance amplifier IC with a built-in limiting amplifier, a signal detect
feature and a photocurrent monitor. The VSC7969 does not require any external electrical components in the
construction of a high performance optical receiver such as for SONET/SDH applications. The analog output is
a differential sig nal with a min imum amplitude of 200mVp-p ( singl e-ended). The VSC7969 opera tes with a sin­gle power supply with a maximum power dissipation of 300mW. A PIN photodiode or APD can be connected
and separately biased to provide optimal performance.

The VSC7969 provides filt ered bias f or MSM and PIN phot odete ctors; appli cations u sing an APD ph otode­tector must supply bias separately. The VSC7969 also provides a photocurrent monitor whose output is linearly
proportional to the input photocurrent.

The VSC7969 can operate from a single +3.3V supply or a +5V or -5.2V supply. The VSC7969 is offered
in die form and in a 16-pin plastic thin-shrink small outline package (TSSOP-16). A fully tested TO-46 outline
packaged receiver with a photodetector is also available.

Block Diagram

Dual power supply pins are

VCCS

provided for +5V or +3.3V

Filter

In

VSC7969

G52355-0, Rev 2.0 Page 1
02/09/01

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+3.3V +5V

Regulator

50Ω

Monitor

Internet: www.vitesse.com

+3.3V

50Ω

Signal
Detect

operation. Only one power
supply pin should be connected.

VCCD
GND

Outputs need to
be AC-coupled

VOUTP

VOUTN

SD_OUT

SD_ADJ

IMON

0.1µF

0.1µF

VITESSE

SEMICONDUCTOR CORPORATION

3.125Gb/s Integrated Transimpedance

Advance Product Information

and Limiting Amplifier with Signal Detect

Electrical Characteristics

Table 1: AC Specifications

Symbol Parameter Min Typ Max Units Conditions

∆I

PH

I

PHS-AVG

I

PHS-PEAK

∆V

OUT-SE

∆V

OUT-DIFF

t

, t

R

F

(1)

Z

T

(1)

∆Z

T

BW Upper -3dB Bandwidth 2.2 2.5 3.0 GHz

F

L

Z

O

PSRR Power Supply Rejection Ratio TBD
I

NOISE

C

PD

SD

H

SD

A-OPEN

SD

D-OPEN

SD

A-SHORT

SD

D-SHORT

SD

HIGH

SD

LOW

Input Photocurrent Swing 2.2 mA

A verage Photocurrent Sensitivity 4 µA

Peak Input Photocurrent Sensitivity 8 µA

Single-Ended Ou tput Voltage
Amplitude

Differential Output Vo ltage Am plitude 400 500 600 mV

Rise and Fall Time 60 100 ps
Transimpedance Gain 20k 27k 40k Ω Differential measurement

Ripple in Passband Transimpedance 1 dB

Lower -3dB Cutoff Frequency 100 kHz

Output Impedance 50 Ω Single-ended

Input-Referred rms Noise Current 500 nA 30kHz to 2.5GHz
Photodetector Capacitance 0.4 0.6 0.8 pF Bias vo ltage on detector at 2.0V
Signal Detect Hysterisis 1 2 4 dB Electrical meas urement on SD pin

Signal Detect Assertion L evel 3 5 9 µA

Signal Detect Deasseration Level 1.0 2.2 3.0 µA

Signal Detect Asseration Level 6 10 18 µA

Signal Detect Deasseration Level 2.0 4.4 6.0 µA

Signal Detect HIGH Logic Level

Signal Detect LOW Logic Level 0.5 0.8 V

200 250 300 mV

V

CCS

- 0.3

Peak-to-peak AC current
amplitude

-23dBm average optical power
with a detector responsitivity of

0.8A/W.

-23dBm average optical power
with a detector responsitivity of

0.8A/W.
Single-ended peak-to-peak

measurement, I
Differential peak-to-peak

measurement, IIN >20µA.
At 2.2mAp-p input photocurrent

swing. 20% to 80%.

Modulation frequency between F
and BW

Referenced to 10MHz,
CPD = 0.6pF

Referenced to 10MHz, CPD =

0.6pF with no external
components

Average photocurrent with SD
open.

Average photocurrent with SD
open.

Average photocurrent with SD
shorted to ground.

Average photocurrent with SD
shorted to ground.

V

VSC7969

>20µA.

IN

L

Page 2 G52355-0, Rev 2.0

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

Internet: www.vitesse.com

02/09/01

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7969

3.125Gb/s Integrat ed Transim p eda nce

and Limiting Amplifier with Signal Detect

Symbol Parameter Min Typ Max Units Conditions

MON

DC Duty Cycle -5 +5 %
IMON

RANGE

IMON

OFFSET

R

J

D

J

NOTES: (1) The transimpedance gain is defined as ZT = (∆V

standard deviation of the edge of th e pat t ern, multiply the standard deviation by 14 to achieve the to ta l random jitter. (3) +K28.5

- K28.5 (00111110101100000101).

Slope of Linear Anal og Photocurrent
Monitor vs Input Optical Power

Photocurren t Monitor Lin earity Range 5 200 µA
Photocurrent Monitor Offset 0 1 0 µA
Random Jitter
Deterministic Jitter

(2)

(3)

OUT - DIFF

0.8 µA/µW

TBD ps Peak-to-peak
TBD ps Peak-to-peak

)/∆IPH. (2) Usi ng 111110000 0 patter n at 2.5 Gb/s to measur e the

0Ω to 2kΩ to V
responsitivity of 0.8A/W

Table 2: DC Specifications

Symbol Parameter Min Typ Max Units Conditions

GND Negative Supply Rail 0 V
V

CCS

V

CCD

ICC Power Supply Current 65 75 mA 3.3V
V

OUT-CM

V

ANODE

V

CATHODE

V

CAT-EXT

V

APD

Positive Supply Rail for 3.3V Operation 3.0 3.3 3.6 V
Positive Supply Rail for 5V Operation 4.5 5.0 5.5 V

-

V

Common-Mode Voltage on Output Pins
Internal DC Bias Voltage on Detector

Anode Contact
Interal DC Bias Voltage on Detector

Cathode Contact
External DC Bias Voltage Permissable

on Detector Cathode Contact
External DC Bias Voltage for Use with

Avalanche Photodetector

0.8 0.9 1.0 V

V

CCS

0.15V

CCS

125mV

-

3.3 10 V

60 V

V

CCS

Applicable to VOUTP and
VOUTN pins at 50Ω load.

V

with a detector

CC

Absolute Maximum Ratings

Power Supply Voltage (V
Power Supply Voltage (V

) ......................................................................................................................... 3.6V

CCS

)........................................................................................................................ 5.5V

CCD

(1)

(at TA = +25°C, unless otherwise specified)

Junction Temperature Range........................................................................................................-40°C to +125°C

Storage Temperature Range .........................................................................................................-40°C to +125°C

Relative Ambient Humidity .................................................................................................................85%/+85°C

NOTE: (1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without caus-

ing permanent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended
periods may affect device reliability.

Recommended Operating Conditions

Positive Voltage Supply (V
Positive Voltage Supply (V

Negative Voltage Rail (GND) ............................................................................................................................ 0V

Ambient Temperature Range (T

G52355-0, Rev 2.0 Page 3
02/09/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

)......................................................................................................................3.3V

CCS

)......................................................................................................................5.0V

CCD

(1)

)

..............................................................................................-40°C to +85°C

A

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VITESSE

SEMICONDUCTOR CORPORATION

3.125Gb/s Integrated Transimpedance
and Limiting Amplifier with Signal Detect

Bare Die Descriptions

Figure 1: Pad Assignments

1143µm

(45.0mil)

Pad 5

SD_ADJ

Pad 4

SD_TP

Pad 3

GND

Pad 2

BG_VREF

Pad 6

VOUTN

Pad 7

SD_OUT

Pad 8

GND

1467

Pad 9

VOUTN

VSC7969

µm (57.2mil)

Pad 10

GND

Advance Product Information

VSC7969

Pad 11

VOUTP

Pad 12

GND

Pad 13

IMON

Pad 14

VOUTP

Pad 15

GND

Pad 16

CSDN

Pad 17

CSDP

Pad 18

GND

Pad 1

GND

Pad 26

VCCD

Pad 25

VCCS

Pad 24

GND

Pad 23

IN

Die Size: 1143µm x 1453µm (45.0mil x 57.2mil)
Die Thickness: 279

µm (11.0mil)

Pad Size: 100µm x 100µm (3.9mil x 3.9mil)
Pad Passivation Opening: 86µm x 86µm (3.4mil x 3.4mil)

Scribe Size: 143µm (5.6mil)

Pad 22

FILTER

Pad 21

GND

Pad 20

GND

Pad 19

GND

143

µm

(5.6mil)

Page 4 G52355-0, Rev 2.0

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

Internet: www.vitesse.com

02/09/01

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7969

3.125Gb/s Integrat ed Transim p eda nce

and Limiting Amplifier with Signal Detect

Table 3: Pad Coordinates

Signal

Name

GND 1 130 250 Negative power supply rail (typically 0V)
BG_VREF 2 130 375 Band Gap voltage reference 1.24V for testpoint, no connect
GND 3 130 500 Negative power supply rail (typically 0V)
SD_TP 4 130 625 Signal Detect test point, DO NOT CONNECT.

SD_ADJ 5 130 750

VOUTN 6 137 875

SD_OUT 7 280 875
GND 8 405 875 Negative power supply rail (typically 0V)
VOUTN 9 530 875
GND 10 655 875 Negative power supply rail (typ ically 0V)

VOUTP 11 780 875 Positive logic output (logic HIGH when photocurrent is HIGH)
GND 12 905 875 Negative power supply rail (typ ically 0V)
IMON 13 1030 875 Photocurrent Monitor
VOUTP 14 1173 875 Positive logic output (logic HIGH when photocurrent is HIGH)
GMD 15 1180 750 Negative power supply rail (typically 0V)
CSDN 16 1180 625 Test point for Signal Detect capacitor. DO NOT CONNECT.
CSDP 1 7 1180 500 Test point for Signal Detect capacitor. DO NOT CONNECT.
GND 18 1180 375 Negative power supply rail (typically 0V)
GND 19 1180 250 Negative power supply rail (typically 0V)
GND 20 1030 125 Negative power supply rail (typically 0V)
GND 21 905 125 Negative power supply rail (typ ically 0V)
FILTER 22 780 125 Photodetector cathode connection (filtered V
IN 23 530 125 Photodetector anode connection
GND 24 405 125 Negative power supply rail (typ ically 0V)
VCCS 25 280 125 Positive power supply rail for 3.3V operation
VCCD 26 137 125 Positive power supply rail for 5V operation

Pad

Number

Coordinates (µm)

X Y

Description

Signal Detect threshold adjustment (see Application am d Usage
section)

Complementary logic output (logi c LOW when photocurrent is
HIGH)

Signal detect output (logic HIGH when photocurrent exceeds

)

SD

A

Complementary logic output (logi c LOW when photocurrent is
HIGH)

)

CC

G52355-0, Rev 2.0 Page 5
02/09/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

Internet: www.vitesse.com